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Nucleation and growth mechanism of nitride films deposited on glass by unbalanced magnetron sputtering

  • Jung, Min J.;Nam, Kyung H.;Han, Jeon G.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.06a
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    • pp.14-14
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    • 2001
  • Nitride films such as TiN, CrN etc. deposited on glass by PVD processes have been developed for many industrial applications. These nitride films deposited on glass were widely used for not only decorative and optical coatings but also wear and corrosion resistance coatings employed as dies and molds made of glass for the example of lens forming molds. However, the major problem of nitride coatings on glass by PVD process is non-uniform film owing to pin-hole and micro crack. It is estimated that nonuniform coating is influenced by a different surface energy between metal nitrides and glass due to binding states. In this work, therefore, for the evaluation of nucleation and growth mechanism of nitride films on glass TiN and CrN film were synthesized on glass with various nitrogen partial pressure by unbalanced magnetron sputtering. Prior to deposition, for the examination of relationship between surface energy and film microstructure plasma pre-treatment process was carried out with various argon to hydrogen flow rate and substrate bias voltage, duty cycle and frequency by using pulsed DC power supply. Surface energy owing to the different plasma pre-treatment was calculated by the measurement of wetting angle and surface conditions of glass were investigated by X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscope(AFM). The microstructure change of nitride films on glass with increase of film thickness were analyzed by X-Ray Diffraction(XRD) and Scanning Electron Microscopy(SEM).

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A study on how to discriminate the polarities of stator windings for 3 phase induction motors by using general purpose multi-testers (멀티테스터를 이용한 3상유도전동기 고정자 권선의 극성 판별법에 관한 연구)

  • Choi, Soon-Man
    • Journal of Advanced Marine Engineering and Technology
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    • v.38 no.9
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    • pp.1137-1140
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    • 2014
  • Faulty electric motors onboard vessels with anomalies in windings or poor insulation are usually repaired at land based workshops and reinstalled in place by crew hands after receiving the repaired motors. Especially for 3 phase induction motors which need Y-${\delta}$ starters with 6 lead wires, it would happen that the polarities of stator windings cannot be well distinguished if the original tags of these wires are erased or not visible clearly, resulting in subsequent damage to the repaired motor due to extreme current flow when the power is given to the motor the stator windings of which are wrongly connected in the polarity. This study proposes an easy way to make correct connection in winding polarities without failures based on the electro-magnetically induced voltages on windings when a slight DC current is supplied to a winding coil by using an analog multi-tester. The proposed method is applied to actual motors and delves into the applicability for polarity discrimination through a few measurements onboard vessels.

Transparent Oxide Thin Film Transistors with Transparent ZTO Channel and ZTO/Ag/ZTO Source/Drain Electrodes

  • Choi, Yoon-Young;Choi, Kwang-Hyuk;Kim, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.127-127
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    • 2011
  • We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

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Infinitely high selectivity etching of SnO2 binary mask in the new absorber material for EUVL using inductively coupled plasma

  • Lee, S.J.;Jung, C.Y.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.285-285
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    • 2011
  • EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

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Experimental Study on Characteristics of Evaporation Heat Transfer and Oil Effect of $CO_2$ in Mini-channels (미세채널 내 이산화탄소의 증발 열전달 특성 및 오일의 영향에 관한 실험적 연구)

  • Lee, Sang-Jae;Kim, Dae-Hoon;Choi, Jun-Young;Lee, Jae-Heon;Kwon, Young-Chul
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.21 no.1
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    • pp.16-22
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    • 2009
  • In order to investigate $CO_2$ heat transfer coefficient and pressure drop by PAG oil concentration during $CO_2$ evaporation, the experiment on evaporation heat transfer characteristics in a mini-channels were performed. The experimental apparatus consisted of a test section, a DC power supply, a heater, a chiller, a mass flow meter, a pump and a measurement system. Experiment was conducted for various mass fluxes($300{\sim}800kg/m^{2}s$), heat fluxes($10{\sim}40kW/m^2$) saturation temperatures($-5{\sim}5^{\circ}C$), and PAG oil concentration(0, 3, 5wt%). The variation of the heat transfer coefficient was different according to the oil concentration. With the increase of the oil concentration, the evaporation heat transfer coefficient decreased and the delay of dryout by oil addition was found. Pressure drop increased with the increase of the oil concentration and heat flux, and the decrease of saturation temperature.

Experimental Study on Characteristics of Evaporation Heat Transfer of CO2 in a Smooth Tube (평활관에서 이산화탄소의 증발열전달 특성에 관한 실험연구)

  • Lee, Sang-Jae;Choi, Jun-Young;Lee, Jae-Heon;Kwon, Young-Chul
    • Journal of Energy Engineering
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    • v.16 no.4
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    • pp.181-186
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    • 2007
  • In order to investigate the heat transfer coefficient and pressure drop during evaporation of $CO_2$, basic experiment on the evaporation heat transfer characteristics in a horizontal smooth tube was performed. The experimental apparatus consisted of a test section, a DC power supply, a heater, a chiller, a mass flow meter, a pump and a measurement system. Experiment was conducted for various mass fluxes ($200{\sim}1200\;kg/m^2s$), heat fluxes ($10{\sim}80\;kW/m^2$) and saturation temperatures ($-5{\sim}5^{\circ}C$). With the increase of quality, the evaporation heat transfer coefficient decreased. With the increase of heat flux, the evaporation heat transfer coefficient increased. Significantly change of the heat transfer coefficient was observed at any heat flux and mass flux. With the increase of saturation temperature, the heat transfer coefficient increased. Pressure drop increased with the increase of mass flux and the decrease of saturation temperature.

Thermal plasma arc discharge method for high-yield production of hexagonal AlN nanoparticles: synthesis and characterization

  • Lakshmanan Kumaresan;Gurusamy Shanmugavelayutham;Subramani Surendran;Uk Sim
    • Journal of the Korean Ceramic Society
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    • v.59
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    • pp.338-349
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    • 2020
  • Large scale with high-purity hexagonal aluminum nitride nanoparticles (AlN NPs) was synthesized using DC thermal plasma arc discharge method (TPAD). Argon gas was used as the plasma forming gas, while ammonia (NH3) gas was used as the reactive gas, which was fed into the reactor at a constant flow rate of 5 LPM. In order to optimize the process for high yield, the experiments were carried out at various plasma input powers, such as 1.5, 3.0, and 4.5 kW. Following the optimization, to examine the influence of using pure nitrogen gas, an experiment was also carried out in the nitrogen ambience. The phase identification and structural determination of the synthesized NPs were carried out using XRD and Raman spectroscopic analyses. While the morphology, particle size, and elemental compositions of the synthesized NPs were observed from SEM, HRTEM, XPS, and EDX analyses. The photoluminescence response was confirmed from the PL spectrum. The PL emission peaks observed around 440 nm (2.8 eV) and 601 nm (2.07 eV), respectively, which correspond to the UV blue and red band emissions of both AlN and Al/AlN NPs. The results show that the synthesized nano-AlN NPs exhibit excellent crystallinity with a high yield of approximately 210 g/h. The current plasma technology can be regarded as a perfect potential process for developing nano-AlN powders with improved efficiency.

Chromaticity(b*), Sheet Resistance and Transmittance of SiO2-ITO Thin Films Deposited on PET Film by Using Roll-to-Roll Sputter System (롤투롤시스템을 이용하여 PET 필름위에 제조된 SiO2-ITO 박막의 색도(b*), 면저항과 투과도 연구)

  • Park, Mi-Young;Kang, Bo-Gab;Kim, Jung-Soo;Kim, Hye-Young;Kim, Hu-Sik;Lim, Woo-Taik;Choi, Sik-Young
    • Korean Journal of Materials Research
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    • v.21 no.5
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    • pp.255-262
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    • 2011
  • This paper has relatively high technical standard and experimental skill. The fabrication of TCO film with high transparency, low resistance and low chromaticity require exact control of several competing factors. This paper has resolved these problems reasonably well, thus recommended for publication. Indium tin oxide(ITO) thin films were by D.C. magnetron roll-to-roll sputter system utilizing ITO and $SiO_2$ targets of ITO and $SiO_2$. In this experiment, the effect of D.C. power, winding speed, and oxygen flow rate on electrical and optical properties of ITO thin films were investigated from the view point of sheet resistance, transmittance, and chromaticity($b^*$). The deposition of $SiO_2$ was performed with RF power of 400W, Ar gas of 50 sccm and the deposition of ITO, DC power of 600W, Ar gas of 50 sccm, $O^2$ gas of 0.2 sccm, and winding speed of 0.56m/min. High quality ITO thin films without $SiO_2$ layer had chromaticity of 2.87, sheet resistivity of 400 ohm/square, and transmittance of 88% and $SiO_2$-doped ITO Thin film with chromaticity of 2.01, sheet resistivity of 709 ohm/square, and transmittance of more than 90% were obtained. As a result, $SiO_2$ was coated on PET before deposition of ITO, their chromaticity($b^*$) and transmittance were better than previous results of ITO films. These results show that coating of $SiO_2$ induced arising chromaticity($b^*$) and transmittance. If the thickness of $SiO_2$ is controlled, sheet resistance value of ITO film will be expected to be better for touch screen. A four point probe and spectrophotometer are used to investigate the properties of ITO thin films.

Dry etching of polycarbonate using O2/SF6, O2/N2 and O2/CH4 plasmas (O2/SF6, O2/N2와 O2/CH4 플라즈마를 이용한 폴리카보네이트 건식 식각)

  • Joo, Y.W.;Park, Y.H.;Noh, H.S.;Kim, J.K.;Lee, S.H.;Cho, G.S.;Song, H.J.;Jeon, M.H.;Lee, J.W.
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.16-22
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    • 2008
  • We studied plasma etching of polycarbonate in $O_2/SF_6$, $O_2/N_2$ and $O_2/CH_4$. A capacitively coupled plasma system was employed for the research. For patterning, we used a photolithography method with UV exposure after coating a photoresist on the polycarbonate. Main variables in the experiment were the mixing ratio of $O_2$ and other gases, and RF chuck power. Especially, we used only a mechanical pump for in order to operate the system. The chamber pressure was fixed at 100 mTorr. All of surface profilometry, atomic force microscopy and scanning electron microscopy were used for characterization of the etched polycarbonate samples. According to the results, $O_2/SF_6$ plasmas gave the higher etch rate of the polycarbonate than pure $O_2$ and $SF_6$ plasmas. For example, with maintaining 100W RF chuck power and 100 mTorr chamber pressure, 20 sccm $O_2$ plasma provided about $0.4{\mu}m$/min of polycarbonate etch rate and 20 sccm $SF_6$ produced only $0.2{\mu}m$/min. However, the mixed plasma of 60 % $O_2$ and 40 % $SF_6$ gas flow rate generated about $0.56{\mu}m$ with even low -DC bias induced compared to that of $O_2$. More addition of $SF_6$ to the mixture reduced etch of polycarbonate. The surface roughness of etched polycarbonate was roughed about 3 times worse measured by atomic force microscopy. However examination with scanning electron microscopy indicated that the surface was comparable to that of photoresist. Increase of RF chuck power raised -DC bias on the chuck and etch rate of polycarbonate almost linearly. The etch selectivity of polycarbonate to photoresist was about 1:1. The meaning of these results was that the simple capacitively coupled plasma system can be used to make a microstructure on polymer with $O_2/SF_6$ plasmas. This result can be applied to plasma processing of other polymers.

Development of a High Heat Load Test Facility KoHLT-1 for a Testing of Nuclear Fusion Reactor Components (핵융합로부품 시험을 위한 고열부하 시험시설 KoHLT-1 구축)

  • Bae, Young-Dug;Kim, Suk-Kwon;Lee, Dong-Won;Shin, Hee-Yun;Hong, Bong-Guen
    • Journal of the Korean Vacuum Society
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    • v.18 no.4
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    • pp.318-330
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    • 2009
  • A high heat flux test facility using a graphite heating panel was constructed and is presently in operation at Korea Atomic Energy Research Institute, which is called KoHLT-1. Its major purpose is to carry out a thermal cycle test to verify the integrity of a HIP (hot isostatic pressing) bonded Be mockups which were fabricated for developing HIP joining technology to bond different metals, i.e., Be-to-CuCrZr and CuCrZr-to-SS316L, for the ITER (International Thermonuclear Experimental Reactor) first wall. The KoHLT-1 consists of a graphite heating panel, a box-type test chamber with water-cooling jackets, an electrical DC power supply, a water-cooling system, an evacuation system, an He gas system, and some diagnostics, which are equipped in an authorized laboratory with a special ventilation system for the Be treatment. The graphite heater is placed between two mockups, and the gap distance between the heater and the mockup is adjusted to $2{\sim}3\;mm$. We designed and fabricated several graphite heating panels to have various heating areas depending on the tested mockups, and to have the electrical resistances of $0.2{\sim}0.5$ ohms during high temperature operation. The heater is connected to an electrical DC power supply of 100 V/400 A. The heat flux is easily controlled by the pre-programmed control system which consists of a personal computer and a multi function module. The heat fluxes on the two mockups are deduced from the flow rate and the coolant inlet/out temperatures by a calorimetric method. We have carried out the thermal cycle tests of various Be mockups, and the reliability of the KoHLT-1 for long time operation at a high heat flux was verified, and its broad applicability is promising.