• Title/Summary/Keyword: DC gain

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Fuzzy Controlled ZVS Asymmetrical PWM Full-bridge DC-DC Converter for Constant load High Power Applications

  • Marikkannan., A;Manikandan., B.V
    • Journal of Electrical Engineering and Technology
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    • v.12 no.3
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    • pp.1235-1244
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    • 2017
  • This paper proposes a fuzzy logic controlled new topology of high voltage gain zero voltage switching (ZVS) asymmetrical PWM full-bridge DC-DC boost converter for constant load and high power applications. The APWM full-bridge stage provides high voltage gain and soft-switching characteristics increase the efficiency and reduce the switching losses. Fuzzy logic controller (FLC) improves the performance and dynamic characteristics of the proposed converter. A comparison with a classical proportional-integral (PI) controller demonstrates the high performances of the proposed technique in terms of effective output voltage regulation under different operating conditions. Simulation is done by integrating two different simulation platforms $PSIM^{(R)}$ and $Matlab^{(R)}/Simulink^{(R)}$ by using SimCoupler tool of $PSIM^{(R)}$. Experimental results using 120W load have been provided to validate the results.

A 3-Bridge LLC Resonant Converter with Wide Input/Output Voltage Gain Characteristics (넓은 입·출력 전압이득 특성을 갖는 3 브리지 LLC 공진컨버터)

  • Yoo, Sang-Jae;Jang, Ki-Chan;Kim, Eun-Soo;Jeon, Yong-Seog;Kook, Yoon-Sang
    • The Transactions of the Korean Institute of Power Electronics
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    • v.25 no.2
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    • pp.142-151
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    • 2020
  • This paper presents a DC/DC LLC resonant converter with wide input/output voltage gain characteristics and its control method for efficiency improvement. For a wide input/output voltage gain characteristics without designing small transformer magnetization inductance, the proposed converter changes the topology into three modes of operation according to the main switch switching pattern. In each operating mode, variable LINK voltage modulation and frequency modulation were performed to control output voltage and improve operating efficiency. A prototype of a 5-kW DC/DC LLC resonant converter was built and tested to verify the validity and applicability of the proposed converter.

A Novel Negative-Output High Step-up Ratio DC-DC Converter Based on Switched-Inductor Cell

  • Kim, Ho-Yeon;Moon, Eun-A;Nguyen, Minh-Khai
    • Journal of IKEEE
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    • v.23 no.1
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    • pp.273-279
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    • 2019
  • A high boost dc-dc converter based on the switched-inductor cell (SL-cell) is suggested in this paper. The suggested converter can provide a high voltage gain that is more than 6. Moreover, the voltage gain can be easily increased by extending a SL cell or a modular voltage boost stage. This paper shows the key waveforms, the operating principles at the continuous conduction mode (CCM), and a comparison between the suggested converter and the other non-isolated converters. In addition, the extension of the suggested converter is presented. The simulation results were shown to reconfirm the theoretical analysis.

Non-Isolated High Gain Bidirectional Modular DC-DC Converter with Unipolar and Bipolar Structure for DC Networks Interconnections

  • Sun, Lejia;Zhuo, Fang;Wang, Feng;Yi, Hao
    • Journal of Power Electronics
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    • v.18 no.5
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    • pp.1357-1368
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    • 2018
  • In this paper, a novel high gain bidirectional modular dc-dc converter (BMC) with unipolar and bipolar structures for dc network interconnections is proposed. When compared with traditional dc grid-connecting converters, the proposed converter can achieve a high voltage gain with a simple modular transformerless structure. A sub-modular structure for the BMC is proposed to eliminate the unbalanced current stress between the different power units (levels) in the BMC. This can realize current sharing and standardized production and assembling. In addition, phase-interval operation is introduced to the sub-modules to realize low voltage and current ripple in both sides of the converter. Furthermore, two types of bipolar topologies of the sub-modular BMC were proposed to extend its application in bipolar dc network connections. In addition, the control system was optimized for grid-connection applications by providing various control strategies. Finally, simulations of a 3-level unipolar sub-modular BMC and a 4-level bipolar sub-modular BMC were conducted, and a 1-kW experimental 3-level unipolar prototype was developed to verify the effectiveness of the proposed converter.

Integrated Rail-to-Rail Low-Voltage Low-Power Enhanced DC-Gain Fully Differential Operational Transconductance Amplifier

  • Ferri, Giuseppe;Stornelli, Vincenzo;Celeste, Angelo
    • ETRI Journal
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    • v.29 no.6
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    • pp.785-793
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    • 2007
  • In this paper, we present an integrated rail-to-rail fully differential operational transconductance amplifier (OTA) working at low-supply voltages (1.5 V) with reduced power consumption and showing high DC gain. An embedded adaptive biasing circuit makes it possible to obtain low stand-by power dissipation (lower than 0.17 mW in the rail-to-rail version), while the high DC gain (over 78 dB) is ensured by positive feedback. The circuit, fabricated in a standard CMOS integrated technology (AMS 0.35 ${\mu}m$), presents a 37 V/${\mu}s$ slew-rate for a capacitive load of 15 pF. Experimental results and high values of two quality factors, or figures of merit, show the validity of the proposed OTA, when compared with other OTA configurations.

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Loss Analysis and Soft-Switching Behavior of Flyback-Forward High Gain DC/DC Converters with a GaN FET

  • Li, Yan;Zheng, Trillion Q.;Zhang, Yajing;Cui, Meiting;Han, Yang;Dou, Wei
    • Journal of Power Electronics
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    • v.16 no.1
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    • pp.84-92
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    • 2016
  • Compared with Si MOSFETs, the GaN FET has many advantages in a wide band gap, high saturation drift velocity, high critical breakdown field, etc. This paper compares the electrical properties of GaN FETs and Si MOSFETs. The soft-switching condition and power loss analysis in a flyback-forward high gain DC/DC converter with a GaN FET is presented in detail. In addition, a comparison between GaN diodes and Si diodes is made. Finally, a 200W GaN FET based flyback-forward high gain DC/DC converter is established, and experimental results verify that the GaN FET is superior to the Si MOSFET in terms of switching characteristics and efficiency. They also show that the GaN diode is better than the Si diode when it comes to reverse recovery characteristics.

A Novel Non-Isolated DC-DC Converter using Single Switch and Voltage Multipliers with High Step-Up Voltage Gain and Low Voltage Stress Characteristics (고전압비와 낮은 전압 스트레스를 가진 단일 스위치와 전압 체배 회로를 이용한 새로운 비절연형 DC-DC 컨버터)

  • Tuan, Tran Manh;Amin, Saghir;Choi, Woojin
    • The Transactions of the Korean Institute of Power Electronics
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    • v.25 no.3
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    • pp.157-161
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    • 2020
  • High voltage gain converters are essential for distributed power generation systems with renewable energy sources, such as fuel cells and solar cells, because of their low voltage characteristics. This paper introduces a novel nonisolated DC-DC converter topology developed by combining an inverting buck-boost converter and voltage multipliers. In the proposed converter, the input voltage is connected in series with the output, and the majority of the input power is directly delivered to the load. The voltage multipliers are stacked in series to achieve high step-up voltage gain. The voltage stress across all of the switches and capacitors can be significantly reduced. As a result, the switches with low voltage ratings can be used to achieve high efficiency and low cost. To verify the validity of the proposed topology, a 360-W prototype converter is built to obtain the experimental results.

Dependence of pulse width on the operating parameters in a gain-switched semiconductor laser (이득 스위칭 반도체 레이저에서 동작 파라메터에 대한 출력 펄스 폭의 의존성)

  • 이상훈;명승일;이명우;서동선
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.4
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    • pp.101-108
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    • 1998
  • We examine experimentally the dependence of output width on DC bias, RF power, and RF frequency in a gain-switched semiconductor laser. The optimum short pulses are obtained around threshold DC bias. The DC bias to generatoe shorter pulses decreases the RF power increases, whereas it increases to above threshold as the RF freqnecy increases. The pulse width becomes less sensitive to the variations of the DC bias, as the RF bias, or frquency increases.

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A High-Gain Boost Converter using Voltage-Stacking Cell (Voltage-Stacking Cell을 이용한 고이득 부스트 컨버터)

  • Lee, Jun-Young;Hwang, Sun-Nam
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.6
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    • pp.982-984
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    • 2008
  • This paper suggests anon-isolated high-gain boost converter using voltage-stacking cell. The voltage gain can be increased by adjusting number of voltage-stacking cells and transformer turns-ratio. Test results with 1kW prototype converter show that the voltage gain is three or four times higher than conventional boost converter at unity transformer turns-ratio and about 90% of efficiency is recorded under full load condition.

Novel Non-Isolated DC-DC Converter Topology with High Step-Up Voltage Gain and Low Voltage Stress Characteristics Using Single Switch and Voltage Multipliers (단일 스위치와 전압 체배 회로를 이용하는 고변압비와 낮은 전압 스트레스를 가진 새로운 비절연형 DC-DC 컨버터 토폴로지)

  • Tran, Manh Tuan;Amin, Saghir;Choi, Woojin
    • Proceedings of the KIPE Conference
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    • 2019.07a
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    • pp.83-85
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    • 2019
  • The use of high voltage gain converters is essential for the distributed power generation systems with renewable energy sources such as the fuel cells and solar cells due to their low voltage characteristics. In this paper, a high voltage gain topology combining cascode Inverting Buck-Boost converter and voltage multiplier structure is introduced. In proposed converter, the input voltage is connected in series at the output, the portion of input power is directly delivered to the load which results in continuous input current. In addition, the voltage multiplier stage stacked in proper manner is not only enhance high step-up voltage gain ratio but also significantly reduce the voltage stress across all semiconductor devices and capacitors. As a result, the high current-low voltage switches can be employed for higher efficiency and lower cost. In order to show the feasibility of the proposed topology, the operation principle is presented and the steady-state characteristic is analyzed in detail. A 380W-40/380V prototype converter was built to validate the effectiveness of proposed converter.

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