• Progress in Superconductivity
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• v.8 no.1
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• pp.81-86
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• 2006

We investigated resistance development in $Au/YBa_2Cu_3O_7(YBCO)$ thin film meander lines during high-power faults. The meander lines were fabricated by patterning 300 nm thick YBCO films coated with 200 nm thick gold layers into meander lines. A gold film grown on the back side of the substrate was also patterned into a meander line. The front meander line was connected to a high-power fault-test circuit and the back line to a DC power supply. Resistance of both lines was measured during the fault. They were immersed in liquid nitrogen during the experiment. Behavior of the resistance development prior to quench completion could be understood better by comparing resistance of the front meander lines with that of the back. Quench completion point could be determined clearly. Resistance and temperature at the quench completion point were not affected by applied field strength. The experimental results were analyzed quantitatively with the concept of heat transfer within the meander lines/substrate and to the surrounding liquid nitrogen. In analysis, the fault period was divided into three regions: flux-flow region, region prior to quench completion, and region after quench completion. Resistance was calculated for each region, reflecting the observation for quench completion. The calculated resistance in three regions was joined seamlessly and agreed well with data.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.94-94
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• 1998

최근 a-CH:N (hydrogenated amorphous carbon nitride)가 a-CH 보다 팡학적, 기계객성 질이 우수하므로 이에 대한 연구가 활발하게 진행되고 있다. 본 실험에선 원료 가스의 유량 은 5 sccm으로 고정시킨 채 원료가스내의 질소 대 메탄 혼합비 (N2ICHa)훌 O 에서 4 까지 변 화시 키 띤서 DC saddle-field PECVD (plasma enhanced chemical vapour d야Xlsition)훌 이 용하여 a-CH:N 박막융 제작하여, 가스 혼합비가 박막의 미세구조와 광학척 성질에 미치는 영향올 연구하였다. 박막 성장시 진공조 내의 압력온 throttle valve롤 사용하여 90 mTorr로 일정하게 유지하였으며 양극 전압과 기판전업은 각각 500 V, 200 V로 고청하고 상온에서 중 착하였다. a a -step으로 측정 한 a-C:H:N 박막의 두께는 혼합가스내의 질소의 양이 증가할수륙 4800 A에서 2000 A로 두께가 감소하였지만 표면 rot핑비less는 혼합가스내의 질소의 양이 중가할 수록 중가함을 AFM (atomic force mi$\alpha$'0 scopy) 으로 관찰하였다. 박막내의 C와 N의 정량 분석은 RES (Rutherford back scattering s야ctroscopy) 핵공명법을 이용하여 분석하였다. X XPS (X -ray photoelectron spec$\sigma$oscopy) 와 FT-IR (Fo삐er transform-infrared s spectrometry)로 미세구조률 측정한 결과 혼합가스내의 질소의 양이 충가할수록 C-H기는 감 소하였지 만 C르N, N-H기 는 늘어 났다. 또한 PL (photoluminescence) 측정 결과 웬료가스 내 메탄과 질소의 비율이 1:1일 때 최대의 발광올 보였고 UVS (비없 vi이et spec$\sigma$orne$\sigma$y)으 로 측정한 광학쩍 에너지 캡은 혼합비내의 질소의 양이 증가할수록 2.53 eV에서 2.3 eV로 감 소하였다. 이를 결과로부터 원료가스내의 N2ICHa의 중가에 따른 박막의 미세구조 변화와 광학척 생 질의 상관 관계가 고찰될 것이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.6-6
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• 2010

Indium Tin Oxide (ITO)를 포함한 Transparent Conduction Oxide (TCO)는 LCD, OLED와 같은 Display, 그리고 Solar Cell 등 광신호와 전기신호간 변환이 필요한 모든 Device에 반드시 필요한 핵심 물질로, 특히 고특성 Display의 투명전극에서 요청되는 95% 이상의 투과도와 $15\;{\Omega}/{\square}$ 이하의 면저항 특성을 동시에 만족할 수 있는 기술은 현재까지 Plasma Sputtering 공정으로 $160^{\circ}C$ 이상에서 증착된 ITO 박막이 유일하다. 그러나, 최근 차세대 기술로서 Plastic Film을 기반으로 하는 Flexible Display 및 Flexible Solar Cell 구현에 대한 요구가 급증하면서, Plastic Film 기판위에 Plasma Damage이 없이 상온에 가까운 저온 ($100^{\circ}C$ 이하)에서 특성이 우수한 ITO 투명전극을 형성 할 수 있는 기술의 확보가 중요한 현안이 되고 있다. 지난 10년 동안 $100^{\circ}C$이하 저온에서 고특성의 ITO 또는 TCO 박막을 얻기위한 다양한 연구와 구체적인 공정이 활발히 연구되어 왔으나, ITO의 결정화 온도 (통상 $150{\sim}180^{\circ}C$)이하에서 증착된 ITO박막은 비정질 상태의 물성적 특성을 보여 원하는 전기적, 광학적 특성확보가 어려웠다. 본 논문에선 기본적으로 절연체 특성을 가져야 하는 산화물인 TCO가 반도체 또는 도체의 물리적 특성을 보여주는 기본원리의 고찰을 토대로, 재료학적 특성상 Crystalline 구조를 보여야 하는 ITO (Complex Cubic Bixbyte Structure)가 Plasma Sputtering 공정으로 저온에서 증착될 때 비정질 구조를 갖게 되는 원인을 규명하고, 이를 바탕으로 저온에서 증착된 ITO가 Crystalline 구조를 유지 할 수 있게 하고, Stress Control에 유리한 Nano-Crystalline 박막을 형성하면서 Crystallinity를 임의로 조절 할 수 있는 새로운 기술인 Magnetic Field Shielding Sputtering (MFSS) 공정과 최근 성과를 소개한다. 한편, 또 다른 새로운 저온 TCO 박막형성 기술로서, 유기반도체와 같은 Process Damage에 매우 취약한 유기물 위에 Plasma Damage 없이 TCO 박막을 직접 형성할 수 있는 Neutral Beam Assisted Sputtering (NBAS) 기술의 원리를 설명하고, 본 공정을 적용한 Top Emission OLED 소자의 결과를 소개한다. 또한, 고온공정이 수반되는 Solar Cell용 투명전극의 경우, 통상의 TCO박막이 고온공정을 거치면서 전기적 특성이 열화되는 원인을 규명하고, 이에 대한 근본적 해결 방법으로 ITO 박막의 Dopant인 Tin (Sn) 원자의 활성화를 증가시킨 Inductively Coupled Plasma Assisted DC Magnetron Sputtering (ICPDMS)의 원리와 박막의 물성적 특성과 내열 특성을 소개한다.

• Journal of the Korean Magnetics Society
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• v.5 no.3
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• pp.203-209
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• 1995

A study of the dependence of the magnetoresistance in $glass\[Cu_{x\AA}\NiFe_{50\AA}\Cu_{x\AA}\Co_{50\AA}](X;\=\;8,\;10,\;14,\;18,\;22,\;26,\;28,\;38,\;48,\;58\;\AA,\;N\;=\;2,\;3,\;4,\;10,\;20)$ multilayers prepared by dc magnetron sputtering on the interlayer thickness of Cu (X), the number of multylayer(N) and annealing temperature has been performed. Resistance measurement were made by four terminal method, and the magnetic field applied to perpendicular and parallel for the current. The maximum magnetoresistance(MR) ratio(%) was appeared in the vicinity of $10\;\AA$ in Cu layer, and it was oscillated with the thickness of Cu. The MR ratio was increased with the number of layers N, however the ratio for the N = 4 layers decreased rather than the N = 3 layers. The dependence of the ratio on the annealing temperature was increased to $250^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.408-408
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• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• Journal of Biosystems Engineering
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• v.39 no.1
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• pp.21-33
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• 2014

Background: Significant technological development and changes happened in the tractor industries. Contrariwise, the test procedures of the major standard development organizations (SDO's) remained unchanged or with a little modification over the years, demanding new tractor test standards or improvement of existing ones for tractor performance, safety, and comfort. Purpose: This study focuses on reviewing the research trends regarding performance, safety and comfort evaluation of agricultural tractors. Based on this review, few recommendations were proposed to revise or improve the current test standards. Review: Tractor power take-off power test using the DC electric dynamometer reduced human error in the testing process and increased the accuracy of the test results. GPS signals were used to determine acceleration and converted into torque. High capacity double extended octagonal ring dynamometer has been designed to measure drawbar forces. Numerical optimization methodology has been used to design three-point hitch. Numerous technologies, driving strategies, and transmission characteristics are being considered for reducing emissions of gaseous and particulate pollutants. Engine emission control technology standards need to be revised to meet the exhaust regulations for agricultural tractors. Finite Element Analysis (FEA) program has been used to design Roll-Over Protective Structures (ROPS). Program and methodology has been presented for testing tractor brake systems. Whole-body vibration emission levels have been found to be very dependent upon the nature of field operation performed, and the test track techniques required development/adaptation to improve their suitability during standardized assessment. Emphasizes should be given to improve visibility and thermal environment inside the cab for tractor operator. Tractors need to be evaluated under electromagnetic compatibility test conditions due to large growing of electronic devices. Research trends reviewed in this paper can be considered for possible revision or improvement of tractor performance, safety, and comfort test standards.

• Journal of Surface Science and Engineering
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• v.47 no.3
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• pp.109-115
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• 2014

High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power, but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported. The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas, MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, $In_2O_3$ : $SnO_2$ composition ratio of 9 : 1 wt% target was used, Ar : $O_2$ flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of $O_2$ and then fixed 2 ~ 6 sccm was compared against that. The thickness of the thin film deposition is fixed at 60 nm, when the partial pressure of oxygen at 9.1%, the specific resistance value of $4.565{\times}10^{-4}{\Omega}cm$, transmittance 86.6%, mobility $32.29cm^2/Vs$ to obtain the value.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.73-76
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• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.