• Title/Summary/Keyword: DC field

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FPGA Implementation of RVDT Digital Signal Conditioner with Phase Auto-Correction based on DSP (RVDT용 DSP 기반 위상 자동보정 디지털 신호처리기 FPGA 구현)

  • Kim, Sung-mi;Seo, Yeon-ho;Jin, Yu-rin;Lee, Min-woong;Cho, Seong-ik;Lee, Jong-yeol
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.6
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    • pp.1061-1068
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    • 2017
  • A RVDT is a sensor that measures angular displacement and the output signal of RVDT is a DSBSC-AM signal. For this reason, a DSBSC-AM demodulation processor is required to determine the angular displacement from the output signal. In this paper, DADC(Digital Angle to DC) which extracts the angular displacement from the output signal of a RVDT is implemented based-on modified Costas Loop usually used in the demodulation of DSBSC-AM signal by using FPGA. DADC can used with both 4-wire and 5-wire RVDTs and can exactly compensate the phase difference between the input excitation and output signals of a RVDT unlike the conventional analog RVDT signal conditioners which require external components. Since digital signal processing technique that can enhance the linearity is exploited, DADC shows 0.035% linearity error, which is smaller than 0.005% that of a conventional analog signal conditioner. The DADC are tested in an integrated experimental environment which includes a commercial RVDT sensor, ADC and an analog output block.

A facile synthesis of transfer-free graphene by Ni-C co-deposition

  • An, Sehoon;Lee, Geun-Hyuk;Jang, Seong Woo;Hwang, Sehoon;Yoon, Jung Hyeon;Lim, Sang-Ho;Han, Seunghee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.129-129
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    • 2016
  • Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which needs transfer to desired substrates for various applications. However, the transfer steps are not only complicated but also inevitably induce defects, impurities, wrinkles, and cracks of graphene. Furthermore, the direct synthesis of graphene on dielectric surfaces has still been a premature field for practical applications. Therefore, cost effective and concise methods for transfer-free graphene are essentially required for commercialization. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer. In order to fabricate 100 nm thick NiC layer on the top of $SiO_2/Si$ substrates, DC reactive magnetron sputtering was performed at a gas pressure of 2 mTorr with various Ar : $CH_4$ gas flow ratio and the 200 W DC input power was applied to a Ni target at room temperature. Then, the sample was annealed under 200 sccm Ar flow and pressure of 1 Torr at $1000^{\circ}C$ for 4 min employing a rapid thermal annealing (RTA) equipment. During the RTA process, the carbon atoms diffused through the NiC layer and deposited on both sides of the NiC layer to form graphene upon cooling. The remained NiC layer was removed by using a 0.5 M $FeCl_3$ aqueous solution, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. In order to confirm the quality of resulted graphene layer, Raman spectroscopy was implemented. Raman mapping revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Additionally, sheet resistance and transmittance of the produced graphene were analyzed by a four-point probe method and UV-vis spectroscopy, respectively. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

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The Effects of Insulating Materials on the Magnetic Properties of Nanocrystalline FeCuNbSiB Alloy Powder Cores (FeCuNbSiB 나노결정립 합금 분말코아의 자기적 특성에 미치는 절연체의 영향)

  • Noh, T.H.;Choi, H.Y.
    • Journal of the Korean Magnetics Society
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    • v.14 no.5
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    • pp.186-191
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    • 2004
  • The variation of magnetic properties with insulating materials(glass frits, talc and polyamide) in compressed powder cores composed of Fe$\sub$73.5/Cu$_1$Nb$_3$Si$\sub$15.5/B$\sub$7/ nanocrystalline alloy powders(size: 250~850 $\mu\textrm{m}$) and 3 wt% insulators has been investigated. Larger permeability was obtained at the frequency lower than 300~400 kHz for the powder cores including ceramic insulators(glass frits and talc) as compared to the cores with polyamide, while at higher frequency than 1 MHz the permeability of the former cores decreased rapidly. Further the cores with ceramic insulators showed larger core loss and smaller peak quality factor attained at lower frequency. On the contrary, the powder cores with polyamide exhibited high stability of permeabilities up to several MHz and superior core-loss and quality-factor properties. Moreover the dc bias property was better in the wide field range for the cores having polyamide. The enhanced magnetic properties of polyamide-added cores were attributed to the more sufficient electrical insulation between magnetic particles, where the higher insulation state was considered to be obtained from the larger volume fraction of polyamide in the powder cores.

Exchange Bias Perpendicular Magnetic Anisotropy by Buffer Layer and Inserted Layer in [Pd/Co]5/FeMn Multilayer ([Pd/Co]5/FeMn 막에서의 바닥층과 삽입층에 의한 교환바이어스수직자기이방성)

  • Joo, Ho-Wan;An, Jin-Hee;Lee, Mi-Sun;Kim, Bo-Keun;Choi, Sang-Dea;Lee, Kee-Am
    • Journal of the Korean Magnetics Society
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    • v.14 no.5
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    • pp.192-195
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    • 2004
  • Magnetic properties by exchange biased perpendicular magnetic anisotropy in [Pd(0.8 nm)/Co(0.8 nm)]$_{5}$/FeMn(15 nm) multilayers deposited by dc magnetron sputtering system are investigated. As inserted Pd layer of interface between [Pd/Co] multilayer and FeMn film, the Hex of perpendicular anisotropy was improved from 127 Oe to 145 Oe. But result of an experiment by thermal stability, the Hex of the case that an inserted layer was inserted in decreased from low 20$0^{\circ}C$ in about 5$0^{\circ}C$ more if not inserted. If Ta was a buffer layer, the experiment results along material of buffer layer, the H$_{ex}$ obtained the largest 127 Oe. And if Pd was a buffer layer, H$_{ex}$ obtained the largest 169 Oe. Also, the Hc in buffer layer of Ta and Pd obtained the largest 203 Oe and 453 Oe, respectively.

Development of Automatic Remote Exposure Controller for Gamma Radiography (감마선투과검사 장치의 자동 원격조작기 개발)

  • Joo, Gwang-Tae;Shin, Jin-Seong;Kim, Dong-Eun;Song, Jung-Ho;Choo, Seung-Hwan;Chang, Hong-Keun
    • Journal of the Korean Society for Nondestructive Testing
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    • v.22 no.5
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    • pp.490-499
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    • 2002
  • Recently, gamma radiographic equipments have been used about 1,000 sets manually and operated by about 2,500 persons in Korea. In order for a radiography to work effectively with avoiding any hazard of the high level radiation from the source, many field workers have expected developing a wireless automatic remote exposure controller. The KlTCO research team has developed an automatic remote exposure controller that can regulate the speed of $0.4{\sim}1.2m/s$ by BLDC motor of 24V 200W which has output of $54kgf{\cdot}cm$, suitable torque and safety factor for the work. And the developed automatic remote exposure controller can control rpm of motor, pigtail position by photo-sensor and exposure time by timer to RF sensor. Thus, the developed equipment is expected that the unit can be used in many practical applications with benefits in economical advantage to combine the use of both automatic and manual type because attachment is possible existent manual remote exposure controller, AC and DC combined use.

Detection Characteristics of a Red Blood Cell Coupled with Micron Magnetic Beads by Using GMR-SV Device (GMR-SV 소자를 이용한 미크론 자성비드와 결합된 적혈구 검출 특성 연구)

  • Lee, Jae-Yeon;Kim, Moon-Jong;Lee, Sang-Suk;Rhee, Jin-Kyu
    • Journal of the Korean Magnetics Society
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    • v.24 no.4
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    • pp.101-106
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    • 2014
  • The glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(2.3 nm)/NiFe(3 nm)/IrMn(12 nm)/Ta(5.8 nm) GMR-SV (giantmagneto-resistance-spin valve) multilayer structure films with a magnetoresistance ratio (MR) of 5.0 % and a magnetic sensitivity (MS) of 1.5%/Oe was deposited by dc magnetron sputtering method. Also, GMR-SV device having a width of $7{\mu}m{\sim}8{\mu}m$ similar to the diameter of RBC (red blood cell) was fabricated by the light lithography process. When RBCs coupled with several magnetic beads with a diameter of $1{\mu}m$ dropped upon the GMR-SV device having MR = 1.06% and MS = 0.3 %/Oe, there is observed the variation of about included of a resistance value of ${\Delta}R=0.4{\Omega}$ and ${\Delta}MR=0.15%$ around a external magnetic field of -0.6 Oe. From these results, the GMR-SV device having the width magnitude of a few micron size can be applied as the biosensor for the analysis of a new magnetic property of hemoglobin inside of RBC combined to magnetic beads.

The Magnetic Properties of $Co_{84}\;Hf_{16}$ Thin Films by FMR (강자성공명을 이용한 $Co_{84}\;Hf_{16}$ 박막의 자기적 성질 연구)

  • 김기현;장재호;김영호
    • Journal of the Korean Magnetics Society
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    • v.7 no.4
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    • pp.191-195
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    • 1997
  • $Co_{84}Hf_{16}$ (1300$\AA$, 2150$\AA$) thin films were prepared by dc magnetron sputtering method. To investigate the uniaxial anisotrpy of the sample, the saturation and effective magnetization of the thin films were measured by VSM and FMR, respectively. The spectroscopic splitting g factor were estimated from the ferromagnetic resonance curves. For 1300$\AA$, 2150$\AA$, the effective magnetization was measured at the temperatures from T=77K to T=300K. The results were analyzed in terms of Bloch's law $M_s(T)=M_s(0)(1BT^{3/2}CT^{5/2}$. The Bloch coefficient B and C were determined by fitting. $M_{eff}(0)$ was obtained by extrapolating $M_{eff}$ to 0 K. From this result, the spinwave stiffness constants D was also determined and the exchange stiffness constants $A_{eff}$ were calculated by Kittel's resonance conditions.

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Glucocorticoid Regulation of Gene Expression in Hippocampal CA3 and Dentate Gyrus (글루코코티코이드 호르몬에 의한 뇌해마의 CA와 Dentate Gyrus 부분의 유전자 발현 변화)

  • Kim, Dong-Sub;Ahn, Soon-Cheol;Kim, Young-Jin;Park, Byoung-Keun;Ahn, Yong-Tae;Kim, Ji-Youn;Kyoji, Morita;Her, Song
    • Journal of Life Science
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    • v.17 no.3 s.83
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    • pp.305-311
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    • 2007
  • Glucocorticoids (GCs) alter metabolism, synaptogenesis, apoptosis, neurogenesis, and dendritic morphology in the hippocampus. To better understand how glucocorticoids regulate these aspects of hippocampal biology, we studied gene expression patterns in the CA3 (Hippocampal pyramidal cell field CA3) and dentate gyrus (DG). Litter-matched Lewis inbred rats treated for 20 days with either 9.5 mg per day sustained-release corticosterone or placebo pellets were compared with high-density oligonucleotide microarray analysis (Rat Neurobiology U34 Arrays, Affymetrix). In placebo-treated rats, 32 genes were expressed at greater levels in CA3 than DG, whereas 3 genes were expressed at great levels in DC than CA3. Regional differences were also apparent in corticosterone-induced changes in the hippocampal transcriptome. Six genes in CA3 and 41 genes in DC were differentially regulated by corticosterone. As per the glucocorticoid effects on gene transcription in the brain, forty three of these genes were upregulated, and 4 genes were downregulated. Genes differentially expressed in hippocampus included those for 13 neurotransmitter proteins, 5 ion channel related proteins, 4 transcription factors, 3 neurotrophic factors, 1 cytokine, 1 apoptosis related protein, and 5 genes involved in synaptogenesis. Interestingly, GCs can have suppressive effects on brain BDNF mRNA transcription, one of the neurotrophic factors. These results indicate the diversity of targets affected by chronic exposure to corticosterone and highlight important regional differences in hippocampal neurobiology.

Development of a Self Balancing Electric Wheelbarrow (자기 균형 기능이 있는 외발 전동 손수레 개발)

  • Lee, Myung-Sub;Sung, Young-Whee
    • Journal of the Institute of Convergence Signal Processing
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    • v.21 no.1
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    • pp.21-28
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    • 2020
  • In this paper, a new type of electric wheelbarrow is proposed and developed. The developed electric wheelbarrow is equipped with an attitude reference system(ARS) sensor, which consists of 3-axis acceleration sensor and 2-axis Gyro sensor so that it can estimate pitch angle and roll angle. When an operator tilts the wheelbarrow up and down, the pitch angle is detected. The sign of the pitch angle is interpreted as the operator's intention for moving the wheelbarrow forward or backward and the controller drives the wheel of the wheelbarrow with the velocity according to the magnitude of the detected pitch angle. A cargo box of the wheelbarrow is designed to rotate and is controlled to maintain level always, so an operator can handle the electric wheelbarrow easily and safely. The wheelbarrow consists of an in-wheel motor, a DC motor, motor drives, an ARS sensor considering economical use in industrial field. Three experiments are performed to verify the feasibility and stability of the electric wheelbarrow.

Implant Isolation Characteristics for 1.25 Gbps Monolithic Integrated Bi-Directional Optoelectronic SoC (1.25 Gbps 단일집적 양방향 광전 SoC를 위한 임플란트 절연 특성 분석)

  • Kim, Sung-Il;Kang, Kwang-Yong;Lee, Hai-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.8
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    • pp.52-59
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    • 2007
  • In this paper, we analyzed and measured implant isolation characteristics for a 1.25 Gbps monolithic integrated hi-directional (M-BiDi) optoelectronic system-on-a-chip, which is a key component to constitute gigabit passive optical networks (PONs) for a fiber-to-the-home (FTTH). Also, we derived an equivalent circuit of the implant structure under various DC bias conditions. The 1.25 Gbps M-BiDi transmit-receive SoC consists of a laser diode with a monitor photodiode as a transmitter and a digital photodiode as a digital data receiver on the same InP wafer According to IEEE 802.3ah and ITU-T G.983.3 standards, a receiver sensitivity of the digital receiver has to satisfy under -24 dBm @ BER=10-12. Therefore, the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysed and measured results of the implant structure, the M-BiDi SoC with the implant area of 20 mm width and more than 200 mm distance between the laser diode and monitor photodiode, and between the monitor photodiode and digital photodiode, satisfies the electrical crosstalk level. These implant characteristics can be used for the design and fabrication of an optoelectronic SoC design, and expended to a mixed-mode SoC field.