• Title/Summary/Keyword: DC field

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Magneto-impedance and Magnetic Relaxation in Electrodeposited Cu/Ni80Fe20 Core/Shell Composite Wire (전기도금 된 Cu/Ni80Fe20 코어/쉘 복합 와이어에서 자기임피던스 및 자기완화)

  • Yoon, Seok Soo;Cho, Seong Eon;Kim, Dong Young
    • Journal of the Korean Magnetics Society
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    • v.25 no.1
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    • pp.10-15
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    • 2015
  • The model for the magneto-impedance of composite wires composed of highly conductive nonmagnetic metal core and soft magnetic shell was derived based on the Maxwell's equations. The Cu($100{\mu}m$ diameter)/$Ni_{80}Fe_{20}$($15{\mu}m$ thickness) core/shell composite wire was fabricated by electrodeposition. The impedance spectra for the $Cu/Ni_{80}Fe_{20}$ core/shell composite wire were measured in the frequency range of 10 kHz~10 MHz under longitudinal dc magnetic field in 0 Oe~200 Oe. The spectra of complex permeability in circumferential direction were extracted from the impedance spectra by using the derived model. The extracted spectra of complex permeability showed relaxation-type dispersion which is well curve-fitted with Debye equation with single relaxation frequency. By analyzing the magnetic field dependence of the complex permeability spectra, it has been verified that the composite wire has magnetic anisotropy in longitudinal direction and the origin of the single relaxation process is the magnetization rotation in circumferential direction.

Sol-gel deposited TiInO thin-films transistor with Ti effect

  • Kim, Jung-Hye;Son, Dae-Ho;Kim, Dae-Hwan;Kang, Jin-Kyu;Ha, Ki-Ryong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.200-200
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    • 2010
  • In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

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A Study on the Recovery of a Metalic Fe-particle from the Steelmaking E.A.F. Slag by the Magnetic Separation (전기로 제강 슬래그에서 자력선별에 의한 지금의 회수)

  • 현종영;김형석;신강호;조동성
    • Resources Recycling
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    • v.6 no.3
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    • pp.3-8
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    • 1997
  • The EA.F. sleelmaking slag (slag that follow) of a cnmvany 1 Co.. containzd a simple substance of a metal, wustlte (FeO), magnetite (Fe,O,), gehlenite (CaAl,SiO,), monlicellite (CaMgSiO,), dc. To recovere a metal (Fe grade . t95%) in the slag, it is desirable that the particles of a metal are isolated from thc slag and madc for a liberated subslance. Then, the liberaled melal is easlly recoveled by a magnetic separation. If thc rcclarnalcd slag, the sizc of which ranges under 40 nun, have a mulli-stage crushing, the most of a metal in thc slag is simply isolaled as a liberated subslance. If the mad, lhat is a liberated subslance and a sphere, is recovered by a magnetic field intensity. the minimum intensity, at which a metal is attracted, is approximately IOOG and did no1 dcpcnd on the particle size of a metad in the same particles. TIe recovered material. that contdined a iron (Fe) over 95% is a metal which is crushed slag by l00G in the multi-stage. If the magnetic field intcns~ty increase, the recovery mcrcasc, but the concentration grade decrease Bewusc thc concentration eams more and more impurities, iron oxide and the coml~ound of alkali earth element. 'll~ercforc If the rccla~nated slag have the multi-stage crushing, the metal is almostly recovered in the crushed slag by lO0G on each particles. If the slag, used as a rcclamatian lhat is a amount of 350,000 tan from I Co., was undcr the multistage crushing and then separaled by 100gauss, it is possible to recova a metal approximately 2.500 Ion, lhat is 0.73% of n ~eclamated slag. in 304.7 mm particles and to recover 4.200 tan in 0.3-1.7 mm particles , that is 1.2% nf a rcclamated slag, in a year. Therefore, ihe told recoverable meld is 6,700 ton, that is 19% of a reclmated slag, in a year, too.

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Structural Design and Thermal Analysis of a Module Coil for a 750 kW-Class High Temperature Superconducting Generator for Wind Turbine (풍력 터빈용 750 kW 급 고온초전도 발전기 모듈의 코일 구조 설계 및 열 해석)

  • Tuvdensuren, Oyunjargal;Go, Byeong-Soo;Sung, Hae-Jin;Park, Min-Won
    • Journal of Korea Society of Industrial Information Systems
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    • v.24 no.2
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    • pp.33-40
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    • 2019
  • Many companies have tried to develop wind power generators with a larger capacity, smaller size and lighter weight. High temperature superconducting (HTS) generators are more suitable for wind power systems because they can reduce volume and weight compared with conventional generators. However, the HTS generator has problems such as huge vacuum vessel and the difficulty of repairing the HTS field coils. These problems can be overcome through the modularization of the HTS field coil. The HTS module coil require a current leads (CLs) for deliver DC current, which causes a large heat transfer load. Therefore, CLs should be designed optimally for reducing the conduction and Joule heat loads. This paper deals with a structural design and thermal analysis of a module coil for a 750 kW-class HTS generator. The conduction and radiation heat loads of the module coils were analysed using a 3D finite element method program. As a result, the total thermal load was less than the cooling capacity of the cryo-cooler. The design results can be effectively utilized to develop a superconducting generator for wind power generation systems.

DC Resistivity method to image the underground structure beneath river or lake bottom (하저 지반특성 규명을 위한 전기비저항 탐사)

  • Kim Jung-Ho;Yi Myeong-Jong;Song Yoonho;Cho Seong-Jun;Lee Seong-Kon;Son Jeongsul
    • 한국지구물리탐사학회:학술대회논문집
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    • 2002.09a
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    • pp.139-162
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    • 2002
  • Since weak zones or geological lineaments are likely to be eroded, weak zones may develop beneath rivers, and a careful evaluation of ground condition is important to construct structures passing through a river. Dc resistivity surveys, however, have seldomly applied to the investigation of water-covered area, possibly because of difficulties in data aquisition and interpretation. The data aquisition having high quality may be the most important factor, and is more difficult than that in land survey, due to the water layer overlying the underground structure to be imaged. Through the numerical modeling and the analysis of case histories, we studied the method of resistivity survey at the water-covered area, starting from the characteristics of measured data, via data acquisition method, to the interpretation method. We unfolded our discussion according to the installed locations of electrodes, ie., floating them on the water surface, and installing at the water bottom, since the methods of data acquisition and interpretation vary depending on the electrode location. Through this study, we could confirm that the dc resistivity method can provide the fairly reasonable subsurface images. It was also shown that installing electrodes at the water bottom can give the subsurface image with much higher resolution than floating them on the water surface. Since the data acquired at the water-covered area have much lower sensitivity to the underground structure than those at the land, and can be contaminated by the higher noise, such as streaming potential, it would be very important to select the acquisition method and electrode array being able to provide the higher signal-to-noise ratio data as well as the high resolving power. The method installing electrodes at the water bottom is suitable to the detailed survey because of much higher resolving power, whereas the method floating them, especially streamer dc resistivity survey, is to the reconnaissance survey owing of very high speed of field work.

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New Approaches for Overcoming Current Issues of Plasma Sputtering Process During Organic-electronics Device Fabrication: Plasma Damage Free and Room Temperature Process for High Quality Metal Oxide Thin Film

  • Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.100-101
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    • 2012
  • The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

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Occurrence of Thrips in Greenhouse Cucumber and Insecticidal Activity of Five Local Western Flower Thrips Populations (시설오이에서 총채벌레류 발생소장 및 5 지역계통 꽃노랑총채벌레의 약제반응)

  • Jeong, In-Hong;Park, Bueyong;Park, Se-Keun;Lee, Sang-Bum;Jeon, Sung-Wook
    • Korean Journal of Environmental Biology
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    • v.36 no.4
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    • pp.517-524
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    • 2018
  • The purpose of this study was to investigate the density of thrips, and insecticidal resistance for effective control of Western flower thrips in greenhouse. The presence and density of the thrips was investigated using yellow colored-sticky trap in a cucumber field from May to August in Cheon-an. The results of the investigation revealed the existence of the following thrips species; Frankliniella occidentalis, F. intonsa, Thrips palmi, T. tabaci, Scirtothrips dorsalis, Microcephalothrips abdominalis, and T. nigropilosus. The predominant pest was found to be the western flower thrips. To survey the western flower thrips insecticidal resistance, we established the discriminating concentration (DC), recommended concentration (RC) and $2{\times}$recommended concentration ($2{\times}RC$) of nine insecticides; Emamectin benzoate EC, spinetoram SC, Chlorfenapyr EC, Spinosad SC, Cyantraniliprole EC, Acetamiprid WP, Dinotefuran WG, thiacloprid SC and thiamethoxam SC. The bioassay of about five local populations was conducted using the leaf-dipping method. In all local populations, insecticidal resistance in western flower thrips had not developed in emamectin benzoate EC (RC, $10.8{\mu}L\;L^{-1}$), chlorfenapyr EC (RC, $50.0{\mu}L\;L^{-1}$), spinetoram SC (RC, $25.0mg\;L^{-1}$), and spinosad SC (RC, $50.0mg\;L^{-1}$). However, insecticidal resistance in RC was found to have developed in cyantraniliprole EC (RC, $50.0{\mu}L\;L^{-1}$) and four insecticides of neonicotinoid type. Insecticidal activity of 95% or more was observed in each population when cyantraniliprole EC tested in $2{\times}RC$. However, the neonicotinoid types showed different insecticidal activity in $2{\times}RC$.

Sol-Gel Synthesis, Crystal Structure, Magnetic and Optical Properties in ZnCo2O3 Oxide

  • Das, Bidhu Bhusan;Barman, Bittesh
    • Journal of the Korean Chemical Society
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    • v.63 no.6
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    • pp.453-458
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    • 2019
  • Synthesis of ZnCo2O3 oxide is performed by sol-gel method via nitrate-citrate route. Powder X-ray diffraction (XRD) study shows monoclinic unit cell having lattice parameters: a = 5.721(1) Å, b = 8.073(2) Å, c = 5.670(1) Å, β = 93.221(8)°, space group P2/m and Z = 4. Average crystallite sizes determined by Scherrer equation are the range ~14-32 nm, whereas SEM micrographs show nano-micro meter size particles formed in ZnCo2O3. Endothermic peak at ~798 K in the Differential scanning calorimetric (DSC) trace without weight loss could be due to structural transformation and the endothermic peak ~1143 K with weight loss is due to reversible loss of O2 in air atmosphere. Energy Dispersive X-ray (EDX) analysis profile shows the presence of elements Zn, Co and O which indicates the purity of the sample. Magnetic measurements in the range of +12 kOe to -12 kOe at 10 K, 77 K, 120 K and at 300 K by PPMS-II Physical Property Measurement System (PPMS) shows hysteresis loops having very low values of the coercivity and retentivity which indicates the weakly ferromagnetic nature of the oxide. Observed X-band EPR isotropic lineshapes at 300 K and 77 K show positive g-shift at giso ~2.230 and giso ~2.217, respectively which is in agreement with the presence of paramagnetic site Co2+(3d7) in the oxide. DC conductivity value of 2.875 ×10-8 S/cm indicates very weakly semiconducting nature of ZnCo2O3 at 300 K. DRS absorption bands ~357 nm, ~572 nm, ~619 nm and ~654 nm are due to the d-d transitions 4T1g(4F)→2Eg(2G), 4T1g(4F)→4T1g(4P), 4T1g(4F)→4A2g(4F), 4T1g(4F)→4T2g(4F), respectively in octahedral ligand field around Co2+ ions. Direct band gap energy, Eg~ 1.5 eV in the oxide is obtained by extrapolating the linear part of the Tauc plot to the energy axis indicates fairly strong semiconducting nature of ZnCo2O3.

Electrical Behavior of the Circuit Screen-printed on Polyimide Substrate with Infrared Radiation Sintering Energy Source (열소결로 제작된 유연기판 인쇄회로의 전기적 거동)

  • Kim, Sang-Woo;Gam, Dong-Gun;Jung, Seung-Boo
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.3
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    • pp.71-76
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    • 2017
  • The electrical behavior and flexibility of the screen printed Ag circuits were investigated with infrared radiation sintering times and sintering temperatures. Electrical resistivity and radio frequency characteristics were evaluated by using the 4 point probe measurement and the network analyzer by using cascade's probe system, respectively. Electrical resistivity and radio frequency characteristics means that the direct current resistance and signal transmission properties of the printed Ag circuit. Flexibility of the screen printed Ag circuit was evaluated by measuring of electrical behavior during IPC sliding test. Failure mode of the Ag printed circuits was observed by using field emission scanning electron microscope and optical microscope. Electrical resistivity of the Ag circuits screen printed on Pl substrate was rapidly decreased with increasing sintering temperature and durations. The lowest electrical resistivity of Ag printed circuit was up to $3.8{\mu}{\Omega}{\cdot}cm$ at $250^{\circ}C$ for 45 min. The crack length arisen within the printed Ag circuit after $10{\times}10^4$ sliding numbers was 10 times longer than that of after $2.5{\times}10^4$ sliding numbers. Measured insertion loss and calculated insertion loss were in good agreements each other. Insertion loss of the printed Ag circuit was increased with increasing the number of sliding cycle.

투명 면상 발열체 응용을 위한 하이브리드 스퍼터 ITO / Ag / ITO 박막의 물성평가

  • Kim, Jae-Yeon;Park, So-Yun;Song, Pung-Geun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.252-252
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    • 2016
  • 최근 학계나 산업계에서 indium tin oxide (ITO)의 높은 전기 전도도 및 광투과율을 이용하여 줄 발열을 기초로 하는 투명 면상 발열체에 대한 연구가 활발히 진행 되고 있다. 하지만 단일 ITO 박막으로 제작한 투명 면상 발열체는 온도가 상승함에 따라 균일하게 발열 되지 않으며, 글라스의 곡면 부분에서 유연성이 부족하여 크랙이 발생하는 다양한 문제점들을 가지고 있다. 이를 해결하기 위해 ITO의 결정화 온도 $160^{\circ}C$ 이상의 고온공정 또는 증착 후 열처리가 필요 하는 추가적인 공정이 필요하다. 따라서 본 연구에서는 단일 ITO 박막의 단점을 개선하는 ITO/Ag/ITO 하이브리드 구조의 투명 면상 발열체를 제작하여 전기적, 광학적 특성을 비교하고 발열량, 온도 균일성, 발열 유지 안정도를 조사하였다. 본 연구에서는 $50{\times}50mm$ 크기의 non-alkali glass (Corning E-2000) 기판 상에 마그네트론 스퍼터링 공정으로 상온에서 ITO/Ag/ITO 박막을 연속적으로 증착 하여 다층구조의 하이브리드 형 투명 면상 발열체를 제조하였다. 박막 증착 파워는 DC (Ag) power 100 W, RF (ITO) power 200 W로 하였으며 ITO박막두께는 40 nm로 고정 시키고 Ag박막 두께는 10 ~ 20 nm로 변화를 주었다. 증착원은 3인치 ITO 단일 타깃(SnO2, 10 wt.%)과 Ag 금속 타깃 (순도 99.99%)을 사용하였으며, 고순도 Ar을 이용하여 방전하였으며 총 주입량은 20 sccm, working pressure는 1.0 Pa을 유지하였다. 증착전 타깃 표면의 불순물 제거와 방전의 안정성을 유지하기 위해 10분간 pre-sputtering을 진행하고 증착하였다. 증착한 박막의 전기적, 광학적 특성은 각각 Hall-effect measurements system (ECOPIA, HMS3000), UV-Vis spectrophotometer (UV-1800, SHIMADZU)으로 측정하였으며, 하이브리드 표면의 구조 및 형상은 field emission-scanning electron microscopy (FE-SEM, Hitachi S-4800)으로 관찰하였다. 또한 투명 면상 발열체의 성능은 0.5 ~ 3 V/cm의 다양한 전압을 power supply (Keithly 2400, USA)를 통해서 시편 양 끝단에 인가한 후 시간에 따른 투명면상 발열체의 표면 온도변화를 infrared thermal imager (IR camera, Nikon)를 이용하여 관찰하였다. 하이브리드 구조를 가진 ITO박막의 두께는 40 nm로 고정 시키고 Ag박막의 두께는 10, 15, 20 nm로 변화를 주었다. 이들 박막의 면저항 값은 각각 5.3, 3.2, $2.1{\Omega}/{\Box}$였으며, 투과도는 각각 86.9, 81.7, 66.5 %였다. 이에 비해 두께 95 nm의 단일 ITO박막의 면저항 값은 $59.5{\Omega}/{\Box}$였으며, 투과도는 89.1 %였다. 하이브리드 구조의 전기적특성은 금속층의 두께가 증가할수록 캐리어 농도 값이 증가함에 따라 비저항 값이 감소되어 면저항 값도 감소된 것이며, 금속 삽입층의 전도특성이 비저항에 큰 영향을 주고 있음을 보여준다. 하지만 금속 층의 두께가 증가할수록 Ag층이 연속적인 막을 형성하여 반사율이 증가함에 따라 투과도가 감소하였다. 따라서 하이브리드 구조를 가진 투명 면상 발열체에 금속 삽입층의 두께 조절은 매우 중요한 인자임을 확인 할 수 있었다. 또한 발열성능을 평가 하기 위해 시편 양 끝단에 3 V전압을 인가한 결과, 금속 삽입층의 두께가 10 nm에서 5 nm씩 증가한 하이브리드 구조를 가진 투명면상 발열체의 최고 온도는 각각 98, 150, $167^{\circ}C$ 였으며, 단일 ITO의 최고 온도는 $32^{\circ}C$였다. 이 것은 동일한 두께 (95 nm)의 단일 ITO 박막과 비교하여 면저항이 낮은 하이브리드 박막의 발열량은 약 $120^{\circ}C$로 발열효율이 매우 우수한 것을 확인 할 수 있었다.

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