• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.269-275
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• 2005

We analyzed the unit cell performance against the cathode porosity, which is supposed to be closely related with active sites for the cathode reaction. In order to fabricate the unit cells with different porosity in the cathode layer we changed the mixing ratio of fine and coarse LSCF cathode powders. The final porosity of each cathode layer was 14, 23, 27, $39\%$ respectively. According to the electrochemical analysis of unit cell performance via DC current interruption and AC impedance method, the electrodic polarization resistance was diminished as the cathode porosity increased. The decrease of polarization resistance was attributed due to the increase of active reaction sites and the enhancement of overall unit cell performance could be explained in the same line.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.440-446
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• 2009

Indium tin oxide(ITO) substrate is one of the key components of the touch panel and its sputtering process is dependent on the characteristics of various touch panel, such as driving type, size of panel, and the intended use. In this study, we optimized the sputtering condition of ITO film on polycarbonate(PC) by using in-line sputtering method for the application to resistive type touch panel. We varied the $O_2$/Ar gas ratio, sputtering power, pressure and moving speed of substrate to deposit ITO films at room temperature with the base vacuum of $1{\times}10^{-6}\;torr$. The sheet resistance and its uniformity, the transmittance, the thickness of the ITO film on PC substrate are investigated and analyzed. The optimized process parameters are as follows : the sheet resistance is $500{\pm}50\;{\Omega}$/□, the uniformity of sheet resistance is lower than 10%, the transmittance is higher than 87 % at 550nm, and the thickness is about 120~250. The optimized deposition conditions by in-line sputtering method can be applied to the actual mass production for the ITO film manufacturing technology.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.6
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• pp.2722-2728
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• 2011

3Phase PWM rectifier has become increasingly popular due to its capability of nearly sinusoidal waveform of the input current, and nearly unity power factor operation as a AC/DC rectifier of high capacity telecommunication power supply system. Generally, PI controller is used as a voltage controller of PWM rectifier and voltage controller must be designed to have low overshoot in transient state to get a reliability and stable operation. However, in the application of telecommunication in which load condition is varied very fast, the voltage controller must have a large bandwidth to reduce output voltage variation. The PI controller with large bandwidth arouse the excessive overshoot of the output voltage, and this large output voltage variation degrades the reliability of communication power of the three-phase PWM Rectifier. In this paper, new IP voltage controller for 3 phase PWM rectifier is proposed which has relatively low transient output voltage variation. The improved output characteristics of the transient state voltage responses of the starting and at load changes of the proposed voltage controller are proved by simulations and experiments.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.38-46
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• 1999

o.25${\mu}m$ T-shaped gate P-HEMT is fabricated and used for design of X0band three stage monolithic microwave integrated circuit(MMIC) low noise amplifier(LNA). The fabricated P-HEMT exhibits an extrinsis transconductance of 400mS/mm and a drain current of 400mA/mm. The RF and noise characteristics show that the current gain cut off frequency is 65GHz and minimum noise figure(NFmin) of 0.7dB with an associated gain of 14.8dB at 9GHz. In the design of the three stage LNA, we have used the inductive series feedback circuit topology with the short stub. The effects of series feedback to the noise figure, the gain, and the stability have been investigated to find the optimal short stub length. The designed three staage LNA showed a gain of above 33dB, a noise figure of under 1.2dB, and ainput/output return loss of under 15dB and 14dB, respectively. The results show that the fabricated P-HEMT is very suitable for a X-band LNA with high gain.

• Geophysics and Geophysical Exploration
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• v.11 no.1
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• pp.68-77
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• 2008

We have developed an inversion algorithm for loop-loop electromagnetic (EM) data, based on the localised non-linear or extended Born approximation to the solution of the 2.5D integral equation describing an EM scattering problem. Source and receiver configuration may be horizontal co-planar (HCP) or vertical co-planar (VCP). Both multi-frequency and multi-separation data can be incorporated. Our inversion code runs on a PC platform without heavy computational load. For the sake of stable and high-resolution performance of the inversion, we implemented an algorithm determining an optimum spatially varying Lagrangian multiplier as a function of sensitivity distribution, through parameter resolution matrix and Backus-Gilbert spread function analysis. Considering that the different source-receiver orientation characteristics cause inconsistent sensitivities to the resistivity structure in simultaneous inversion of HCP and VCP data, which affects the stability and resolution of the inversion result, we adapted a weighting scheme based on the variances of misfits between the measured and calculated datasets. The accuracy of the modelling code that we have developed has been proven over the frequency, conductivity, and geometric ranges typically used in a loop-loop EM system through comparison with 2.5D finite-element modelling results. We first applied the inversion to synthetic data, from a model with resistive as well as conductive inhomogeneities embedded in a homogeneous half-space, to validate its performance. Applying the inversion to field data and comparing the result with that of dc resistivity data, we conclude that the newly developed algorithm provides a reasonable image of the subsurface.

• Journal of the Korean Society of Safety
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• v.33 no.1
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• pp.28-34
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• 2018

The purpose of this study is to fabricate a sensor module to detect the resistive leakage current (Igr) in real time that occurs to low voltage electric lines and to verify its reliability. In the case of the developed sensor module, wires are inserted into the zero current transformer (ZCT) and current transformer (CT) in advance and then the branch line is connected to the circuit breaker. The measurement result of the resistance of the distribution panel equipped with the developed sensor module shows that the resistance is $0.151m{\Omega}$ between the R and R phases, $0.169m{\Omega}$ between the S and S phases, and $0.178m{\Omega}$ between the T and T phases, respectively. The insulation resistance measured at AC 500 V and 1,000 V is $0.08m{\Omega}$ between the R, S, T and N phases, respectively. Then, the insulation resistance measured at DC 500 V is $83.3G{\Omega}$ between the R, S, T and G terminal, respectively. In addition, the applied withstanding voltage is AC 220 V/380 V/440 V and it was found that characteristics between all phases are good. This study measured the standby power by installing the developed sensor module at the rear of the MCCB and switching the circuit breaker on sequentially. The standby power is 1.350 W when one circuit breaker is turned on, 1.690 W when 2 circuit breakers are turned on, and 4.371 W when 10 circuit breakers are turned on. This study also verified the reliability of the standby power of the distribution panel equipped with the developed sensor module using the Minitab Program (Minitab PGM). Since the analysis shows the statistical average of 1.34627 in the reliable range of normal distribution, standard deviation of 0.001874, AD of 0.554, and P value of 0.140, it is found that the distribution panel equipped with the developed sensor module has high reliability.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.113-113
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• 2017

최근 많은 산업의 발전으로 인해 환경오염을 유발시키는 폐수가 다량으로 배출되고 있으며, 이러한 폐수 속에는 유기용매, 고분자 물질 및 각종 염 등의 난분해성 물질들이 다량으로 함유되어 있다. 이런 물질들을 분해시키기 위해 물리적, 생물학적 수처리 방법이 많이 이용되고 있지만 이 방법들은 각각 운전비용과 처리비용이 고가인 단점이 있다. 따라서 비용과 효율 측면에서 효과적인 폐수처리를 위해서 전기화학적 폐수처리 방법이 많이 사용되고 있다. 물리적, 생물학적 처리 방법에 비해 비용이 적게 들고, 처리 후 잔류물이 남지 않으며, 독성을 띄는 산화제의 첨가 없이도 높은 폐수처리 능력을 보이기 때문에 친환경적이므로, 전기화학적 폐수산화 처리에 사용되는 불용성 전극에 대한 연구가 많이 진행되어져 오고 있다. 그 중 BDD(Boron-doped diamond) 전극은 표면에서 강력한 산화제인 수산화 라디칼의 높은 발생량으로 인해 뛰어난 폐수처리 능력을 보이므로 불용성 전극 분야에서 활발한 연구가 진행 중이다. 그러나 기존에 BDD 전극의 기판 모재로 이용되던 Si, W, Pb등은 모두 기계적 강도, 폐수처리 능력 및 독성 문제로 인해 한계가 있었고, 특히 Nb기판 위에 형성시킨 BDD 전극은 뛰어난 폐수처리 능력에도 불구하고 비싼 모재 원가로 인해 상용화가 힘든 실정이다. 이런 문제점을 해결하기 위해 높은 기계적 강도와 전기화학적 안정성을 가진 Ti 기판을 사용한 BDD 전극에 대한 연구가 보고되고 있다. 그러나 BDD와 Ti 간의 lattice mismatch, BDD층 형성을 위한 고온 공정시 탄소의 확산으로 인한 기판 표면에서의 TiC층 형성으로 인해 접착력이 감소하여 박리가 생기는 문제점이 있다. BDD와 Ti의 접착력을 향상시키기 위해 융점이 높고, 전기전도성이 우수한 TiN을 diffusion barrier layer로 삽입하면 탄소 확산에 의한 TiC층의 생성을 억제하여, 내부응력에 기인한 접착력 감소를 방지할 수 있다. 또 하나의 방법으로 Ti 기판의 전처리를 통해 BDD층의 접착력을 향상 시킬 수 있다. Sanding과 etching을 통해 기판 표면의 물리, 화학적인 표면조도를 부여하고, seeding을 통해 diamond 결정 성장에 도움을 주는 seed 입자를 분포시킴으로써, 중간층과 BDD층의 접착력을 향상시키고, BDD 결정핵 성장을 촉진시켜 고품질의 BDD박막 증착이 가능하다. 본 연구에서는 기존 Si, Nb 등의 기판 모재를 Ti로 대체함으로써 제조원가를 절감시키고, TiN 중간층을 삽입하여 접착력을 향상 시킴으로써 기존의 BDD 전극과 동등한 수준의 물성 및 수처리 특성을 가진 BDD전극 제작을 목표로 하였다. $25{\times}25mm$의 Ti 기판위에 TiN 중간층을 DC magnetron sputtering을 이용하여 증착 후, BDD 전극 층을 HFCVD로 증착하였다. 전처리를 진행한 기판과 중간층 및 BDD층의 미세구조를 XRD로 분석하였고, 표면 형상을 SEM으로 확인하였다. BDD전극의 접착력 분석을 통해 TiN 중간층의 최적 조성을 도출하고, 최종적으로 BDD/TiN/Ti 전극의 CV특성과 가폐수의 COD분해능력 및 축산폐수, 선박평형수 등의 실제 폐수 처리 능력을 BDD/Si, BDD/Nb 전극과 비교 검토할 것이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.360-369
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• 2008

The solar cells should be operated at the maximum power point because its output characteristics were greatly fluctuated on the variation of insolation, temperature and load. It is necessary to install an inverter among electric power converts by means of the output power of solar cell is DC. The inverter is operated supply a sinusoidal current and voltage to the load and the interactive utility line. In this paper, the proposes a photovoltaic system is designed with a step up chopper and single phase PWM voltage source inverter. Synchronous signal and control signal was processed by one-chip microprocessor for stable modulation. The step up chopper is operated in continuous mode by adjusting the duty ratio so that the photovoltaic system tracks the maximum power point of solar cell without any influence on the variation of insolation and temperature for solar cell has typical dropping character. The single phase PWM voltage source inverter is consists of complex type of electric power converter to compensate for the defect, that is, solar cell cannot be develop continuously by connecting with the source of electric power for ordinary using. It can be cause the efect of saving electric power, from 10 to 20%. The single phase PWM voltage source inverter operates in situation, that its output voltage is in same phase with the utility voltage. The inverter are supplies an ac power with high factor and low level of harmonics to the load and the utility power system.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.38 no.12
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• pp.1240-1246
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• 2010

Enthalpy probe with the inner and outer diameters of 1.5 mm and 4.8 mm, respectively, is designed and used to measure the temperatures and velocities along the centerline of Ar arc plasma flow until the probe was destroyed. For this purpose, Ar arc plasma flow is generated by non-transferred type DC arc heater with the power level of 17 kW. From this experiment, it is shown that the designed enthalpy probe can measure the temperature and velocity of arc plasma flow up to 12,000 K and 600 m/s, respectively, without destroy of probe tip. In this extreme case, the arc plasma flow is calculated to transfer the heat flux of ${\sim}5{\times}10^7\;W/m^2$ to the probe based on the heat and thermal boundary equations near the forward stagnation point of a body immersed in arc plasma flow. Consequently, the designed enthalpy probe can measure the wide ranges of plasma temperatures, velocities and concentrations simultaneously, which are generated by various types of arc heaters within the heat flux ranges of $0{\sim}5{\times}10^7\;W/m^2$ on the probe tip.