• 한국인터넷방송통신학회논문지
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• 제21권6호
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• pp.123-128
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• 2021

직류 배전시스템의 보급이 증가됨에 따라 이에 따른 고장 발생 및 화재 사고도 증가하고 있고 특히 스마트 그리드의 구성 요소인 ESS 화재 사고, 직류 시스템인 태양광 발전 시스템의 화재 사고는 신재생에너지의 보급이 급격하게 증가하고 동시에 사용 연수 10년 이상의 노후 시설이 많아짐에 따라, 시스템 구성 요소 간의 전기적인 접속의 문제들로 발생하고 있다. 이로 인해 유발된 빛과 열을 방출하여 직접적인 화재의 원인이 될 수 있는 아크가 화재의 한 원인으로 지적되고 있다. 따라서 이러한 아크 결함의 문제는 기존의 과전류차단기와 누전차단기로는 아크사고를 사전에 차단할 수 없는 실정이며 대규모 유틸리티 시스템뿐만 아니라 소규모 주거 시스템에서도 인간의 안전에 중대한 위협이 될 수 있기에 아크사고에 대한 대책이 필요하다. 본 논문에서는 국제표준화에 만족하는 시험장비 개발과 아크 발생에 따른 고장 및 화재를 보호하기 위한 직류 아크 Generator를 개발 하고자 한다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2014년도 전력전자학술대회 논문집
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• pp.524-525
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• 2014

In this paper, we propose algorithm plan variable for detection of DC arc. Changes of surrounding frequencies of harmonic wave is proposed to detect DC arc. To prove validity of these variables, we analyzed frequency based on the measured data and waveform of load current by performing the experiment which generates DC arc by using DC arc generator regulated in UL1699 was carried out.

• Journal of Electrical Engineering and Technology
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• 제1권2호
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• pp.216-225
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• 2006

This paper presents a new circuit topology of DC busline switch and snubbing capacitor-assisted full-bridge soft-switching PWM inverter type DC-DC power converter with a high frequency link for low voltage large current applications as DC feeding systems, telecommunication power plants, automotive DC bus converters, plasma generator, electro plating plants, fuel cell interfaced power conditioner and arc welding power supplies. The proposed power converter circuit is based upon a voltage source-fed H type full-bridge high frequency PWM inverter with a high frequency transformer link. The conventional type high frequency inverter circuit is modified by adding a single power semiconductor switching device in series with DC rail and snubbing lossless capacitor in parallel with the inverter bridge legs. All the active power switches in the full-bridge inverter arms and DC busline can achieve ZVS/ZVT turn-off and ZCS turn-on commutation operation. Therefore, the total switching losses at turn-off and turn-on switching transitions of these power semiconductor devices can be reduced even in the high switching frequency bands ranging from 20 kHz to 100 kHz. The switching frequency of this DC-DC power converter using IGBT power modules is selected to be 60 kHz. It is proved experimentally by the power loss analysis that the more the switching frequency increases, the more the proposed DC-DC converter can achieve high performance, lighter in weight, lower power losses and miniaturization in size as compared to the conventional hard switching one. The principle of operation, operation modes, practical and inherent effectiveness of this novel DC-DC power converter topology is proved for a low voltage and large current DC-DC power supplies of arc welder applications in industry.

• 조명전기설비학회논문지
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• 제25권7호
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• pp.105-113
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• 2011

The study about three-phase synthetic making test using DC power has been performed in order to increase the making test capacity on Vacuum Circuit Breaker. And, it made possible to solve the limitations that short-circuit testing facilities can not fulfill the testing requirements of VCB exceeding three-phase 36[kV] 31.5[kA]. By using DC power and high speed spark-gap switch, this method made the equivalence with the pre-arc that occurred during the making process under the fault condition of power system. As results, KERI(Korea Electrotechnology Research Institute) could have capacity to carry out type test for VCB under three-phase 52[kV] 40[kV], which satisfies the IEC Standard.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.147-152
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• 2012

This paper dealt with the frequency component analysis of acoustic signals produced by corona and series-arc discharges as a diagnostic technique for closed-switchboards. Corona and series-arc discharge were simulated by a needle-plane electrode and an arc generator specified in UL1699, respectively. Acoustic signal was detected by a wideband acoustic sensor with a frequency bandwidth of 4 Hz~100 kHz (-3 dB). We analyzed frequency spectrums of the acoustic signals detected in various discharge conditions. The results showed that acoustic signals mainly exist in ranges from 30 kHz to 60 kHz. From the experimental results, an acoustic detection system which consists of a constant current power supply (CCP), a low noise amplifier (LNA) and a band pass filter was designed and fabricated. The CCP separates the signal component from the DC source of acoustic sensor, and the LNA has a gain of 40 dB in ranges of 280 Hz~320 kHz. The high and the low cut-off frequency are 30 kHz and 60 kHz, respectively. We could detect corona and series-arc discharges without any interference by the acoustic detection system, and the best frequency is considered in ranges of 30 kHz~60 kHz.

• 열처리공학회지
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• 제22권5호
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• pp.290-297
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• 2009

In case of using Asymmetric Bipolar Pulsed DC (ABPD) power generator, thin film is efficiently deposited as ions are getting higher energy by suppressing target poisoning and electric arc. In this article, the mechanical properties of CNx thin films deposited on the STS 316L were compared with DC and ABPD power generators. The CNx thin films deposited with ABPD clearly improved wear resistance by higher ratio of sp3CN as compared with DC. Nb interlayer affected to increase the value of 10N of adhesion between CNx thin films and substrate. But, CNx thin films deposited with ABPD couldn't endure to wear load and decreased wear resistance as the films were too thinner than substrate. Nevertheless the higher substrate bias energy applied to perform the dense films, it wasn't shown benefits about the wear properties from DC sputtering. But, in case of using ABPD sputtering, the wear resistance was largely improved without changing morphology despite of thin films.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2007년도 추계학술대회 논문집
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• pp.43-46
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• 2007

In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important for series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used. Proposed scheme has lots of advantages such as long lifecyle, compact size, flat topped pulse forming, small weight, protection for arc, high efficiency and flexibility to generate various kinds of pulse output.