• 열처리공학회지
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• 제23권5호
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• pp.269-276
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• 2010

This study has been carried out to the low temperature plasma nitriding treatment on the mechanical properties of stainless steel at temperature range between $400^{\circ}C$ and $500^{\circ}C$. It was found that there was precipitated to free CrN matrix below $400^{\circ}C$ and there was precipitated S-phase of STS 316L, ${\varepsilon}$-phase of STS 409L and ${\alpha}N$-phase of STS 420J2. STS 316L has formed relatively abundant CrN phase and ${\gamma}^{\prime}-Fe_4N$ phase at $500^{\circ}C$, alternatively STS 409L and STS 420J2 were more deeply nitrided than STS 316L at $500^{\circ}C$.

• 열처리공학회지
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• 제24권1호
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• pp.3-9
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• 2011

Plasma nitriding of stainless steels has been investigated over a range of temperature from 400 to $500^{\circ}C$ and time from 10 to 20 hours. Characterization of systematic materials was carried out in terms of mechanical properties and corrosion behaviors. The results showed that plasma nitriding conducted at low temperatures not only increased the surface hardness, but also improved the corrosion resistance of STS 316L, STS409L, and STS 420J2. It was found that plasma-nitriding treatment at $500^{\circ}C$ resulted in increasing the corrosion performance of STS 409L and STS 420J2, while STS 316L was observed with server and massive damage on surface due to the formation of CrN.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.37.2-37.2
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• 2018

ZrN 코팅은 다른 하드 코팅과 비교해 우수한 기계적 특성 및 내식성으로 다양한 산업 분야에서 사용되고 있다. 특히 ZrN 기반의 코팅 중, ZrCuN 코팅은 50 GPa 이상의 매우 높은 경도를 나타내는 것으로 보고되고 있다. 본 연구에서는 Zr-Cu 기반 조성에 우수한 기계적 특성 향상을 위해 제 3의 원소를 첨가하여 단일합금 타겟을 제작하였다. 단일 합금 타겟은 플라즈마 아크멜팅법으로 제작되었으며, 제작된 단일합금 타겟을 이용하여 DC 마그네트론 스퍼터링 공정을 통해 Zr 기반의 나노복합박막을 증착하였다. Zr기반 나노복합 박막은 다양한 $Ar:N_2$ 분위기 하에서 증착하였으며, 가스비에 따른 코팅의 특성을 확인하기 위해 SEM/EDS, XRD, nano-indentation, friction test 분석을 진행하였다.

• 한국전기전자재료학회논문지
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• 제14권8호
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• pp.622-628
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• 2001

We developed 1- and 2-dimensional fluid model for the analysis of a capacitively coupled Ar RF(Radio Frequency) glow discharge. This discharge is in pure Ar gas at the pressure 100[mTorr], frequency 13.56[MHz] and voltage amplitude 120[V}. This model is based on the equations of continuity and electron energy conservation coupled with Poison equation. 2-dimensional model is simulated on the condition of GEC(Gaseous Electronic Conference cell). The geometry of the discharge chamber and the electrodes used in the model is cylindrically simmetric; tow cylinders for the electrodes are surrounded by the grounded chamber. It is shown that 1-dimensional model is very useful on the understanding of RF glow discharge property and of the movement of charged particles. 2-dimensional model predicts off-axis maximum structure as in the experiments and has the results in qualitatively and quantitatively good agreement with the experiments. Effects of dc self-bias voltage, guard ring and reactor geometry is discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2251-2252
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• 1999

In this paper, the effect of magnetic field was measured on NOx removal characteristics for wire-plate plasma reactor with magnetic field applied to electric field vertically. NOx from simulated diesel engine flue gas are decomposed by the corona discharge of DC, AC and Pulsed voltages in wire-plate reactor. Consumption power increased with increasing discharge voltage. When magnetic field was applied to electric field vertically, consumption power decreased. NOx removal rate and arc transition voltage of plasma reactor with magnetic field were higher than those of plasma reactor without magnetic field.

• 한국표면공학회지
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• 제37권3호
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• pp.169-174
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• 2004

MgO thin films were reactively deposited using an internal inductively coupled plasma assisted sputtering method varying reactive gas ratio to get stoichiometric film composition, and bipolar dc substrate bias to suppress micro arcs. The minimum frequency required for arc suppression was about 10KHz depending on ICP power. Their crystallinity was analyzed using X-ray diffraction and surface morphology using AFM. The surface was very smooth with rms roughness less than 0.42nm. The preferred orientation of the films were changing from (200) to bulk-like characteristics as Ar: $O_2$ratio was controlled to 10 : 2. Optical emission spectroscopy revealed that there were two distinct discharge modes: a blue one and a green one, where enhanced emission from Ar and Mg were observed. This cannot simply be understood by metallic or oxide mode of reactive sputtering due to ICP coupled to magnetron discharge.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2019년도 추계학술대회
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• pp.130-131
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• 2019

국제 핵융합실험로(ITER)를 위해 한국이 제작, 시험, 설치 및 시운전을 하기로 되어 있는 CS(Central Solenoid) 초전도 자석용 전원장치의 시험 및 그 결과에 관하여 논의하고자 한다. 토카막 운전에서 플라즈마 발생 및 제어를 위한 대전류, 고전압, 270 kA 단락 용량 및 4상한 운전 특성을 갖는 45 kA/1050 V의 12펄스 싸이리스터 AC/DC 컨버터 및 제어기를 제작완료하였으며, ITER 부지로 운송하기 전에 공장의 전원 및 부하용량을 고려하여 시험절차서를 개발하였으며, 공장시험(FAT, Factory Acceptance Test)를 진행하였다.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.286-291
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• 2003

(Pb,Sr)TiO$_3$(PST) thin films have attracted great interest as new dielectric materials of capacitors for Gbit dynamic random access memories. In this study, inductively coupled CF$_4$/Ar plasma was used to etch PST thin films. The maximum etch rate of PST thin films was 740 $\AA$/min at a CF$_4$(20 %)/Ar(80 %) 9as mixing ratio, an RF power of 800 W, a DC bias voltage of -200 V, a total gas flow of 20 sccm, and a chamber pressure of 15 mTorr. To clarify the etching mechanism, the residue on the surface of the etched PST thin films was investigated by X-ray photoelectron spectroscopy. It was found that Pb was mainly removed by physically assisted chemical etching. Sputter etching was effective in the etching of Sr than the chemical reaction of F with Sr, while Ti can almost removed by chemical reaction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.938-941
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• 2000

SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment

• 한국표면공학회지
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• 제50권6호
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• pp.504-509
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• 2017

In order to improve corrosion resistance for cast stainless steel in seawater, the characteristics of corrosion resistance after plasma ion nitriding was investigated. Plasma ion nitriding process was conducted in a mixture of nitrogen of 25% and hydrogen of 75% at substrate temperature ranging from 350 to $500^{\circ}C$ for 10 hours using pulsed-DC glow discharge plasma with working pressure of 250 Pa in vacuum condition. Corrosion tests were carried out for as-received and plasma ion nitrided specimens. The corrosion characteristics were investigated by measurement of weight loss and observation of surface morphology. In anodic polarization experiment, relatively less damage depth and weight loss were presented at a nitrided temperature of $400^{\circ}C$, attributing to the formation of S-phase.