• 공업화학
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• 제31권3호
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• pp.291-298
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• 2020

본 연구에서는 RF/DC 마그네트론 증착법을 이용하여 실온에서 유리 기판 상에 ZITO/Ag/ZITO 다층막 투명전극을 제조하였다. ZITO/Ag/ZITO (100/8/42 nm)로 이루어진 다층막 구조에 대해, 면저항이 9.4 Ω/㎡이고 550 nm에서 투과도가 83.2%인 투명 전도성 필름이 얻어졌다. ZITO/Ag/ZITO 다층막 필름의 면저항 및 투과도 특성은 적외선(열선)을 효과적으로 차단할 수 있기 때문에 고분자분산액정(polymer-dispersed liquid crystal, PDLC) 기반 스마트 윈도우 적용에 매우 유용함을 알 수 있었으며 이로 인해 에너지 절약형 스마트 유리로서의 응용도 가능할 것으로 판단된다. 제조된 ZITO/Ag/ZITO 다층막 투명전극을 적용한 2관능성 우레탄 아크릴레이트 기반 PDLC 시스템에 있어서 PDLC 층 두께 및 자외선(ultraviolet, UV) 세기 변화가 전기광학적 특성, 광중합 동력학 및 표면 형태학에 미치는 영향을 조사하였다. 15 ㎛의 PDLC 층 두께를 가지며 2.0 mW/c㎡의 UV 세기로 광경화된 PDLC 셀이 우수한 off-state 불투명도, 높은 on-state 투과도 및 양호한 구동 전압을 나타냈다. 또한, 본 연구에서 제조된 최적 조건의 PDLC 기반 스마트 윈도우는 광을 효율적으로 산란시킬 수 있는 2~5 ㎛ 크기의 양호한 마이크로 구조를 갖는 액정 droplet들이 형성되었으며, 이로 인해 우수한 최종 물성을 갖는 PDLC 셀이 제조되었다.

• 공업화학
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• 제33권1호
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• pp.50-57
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• 2022

본 연구에서는 RF/DC 마그네트론 증착법을 이용하여 유리 기판 상에 실온에서 TIZO/Ag/TIZO 다층막 투명전극 필름을 증착하였다. 전체 박막 두께 60 nm TIZO/Ag/TIZO (10 nm/10 nm/40 nm)로 이루어진 다층막의 경우 650 nm에서 투과도는 86.5%, 면저항 값은 8.1 Ω/□를 나타냈으며, 적외선(열선)을 효과적으로 차단할 수 있는 투과도 특성 때문에 향후 에너지 절약형 스마트 윈도우로서의 적용도 가능할 것으로 판단된다. TIZO/Ag/TIZO 다층막 투명전극을 적용한 폴리에스터 아크릴레이트 기반 고분자분산액정(polymer-dispersed liquid crystal, PDLC) 시스템에 있어서 액정과 prepolymer의 함량비, PDLC 코팅층의 두께 및 자외선 세기 변화에 따른 전기광학 특성 및 표면 형태학에 미치는 영향이 조사되었다. 15 ㎛의 PDLC 층 두께에 1.5 mW/cm²의 UV 세기로 광경화된 TIZO/Ag/TIZO 다층막 투명전극 적용 PDLC 셀이 전반적으로 양호한 구동 전압과 on-state 투과도 및 뛰어난 off haze를 나타냈으며, PDLC 복합체의 고분자 매트릭스 표면에 형성된 액정 droplet들은 입사광을 효율적으로 산란시킬 수 있는 1~3 ㎛ 크기를 갖고 있었다. 또한, 본 연구에서 제조된 TIZO/Ag/TIZO 다층막 투명전극 적용 PDLC 기반 스마트 윈도우는 연한 갈색의 색조를 띠고 있어서 심미적 측면에서 색다른 장점을 부여할 것으로 기대된다.

• 열처리공학회지
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• 제28권3호
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• pp.121-125
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• 2015

GZO single layer, Ni buffered GZO(GZO/Ni), Ni intermediated GZO (GZO/Ni/GZO) and Ni capped GZO (Ni/GZO) films were prepared on poly-carbonate (PC) substrates by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni (2 nm thick) thin film on the optical, electrical and structural properties of GZO films were investigated. As deposited GZO single layer films show the optical transmittance of 81.3% in the visible wavelength region and a resistivity of $1.0{\times}10^{-2}{\Omega}cm$, while GZO/Ni/GZO trilayer films show a lower resistivity of $6.4{\times}10^{-4}{\Omega}cm$ and an optical transmittance of 74.5% in this study. Based on the figure of merit, it can be concluded that the intermediated Ni thin film effectively enhances the opto-electrical performance of GZO films for use as transparent conducting oxides in flexible display applications.

• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.303-307
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• 2015

Multilayered films of ITO (In₂O₃:SnO₂ = 9:1)/SiO₂ were deposited on soda-lime glass by RF/DC magnetron sputtering at 500℃ to improve the energy conversion efficiency of dye-sensitized solar cells (DSSCs). The light absorption of the dye was improved by decrease in light reflectance from the surface of the DSSCs by using an ITO film. In order to estimate the optical characteristics and compare them with experimental results, a simulation program named EMP (essential macleod program) was used. EMP results revealed that the multilayered thin films showed high transmittance (approximate average transmittance of 79%) by adjusting the SiO₂ layer thickness. XRD results revealed that the ITO and TiO₂ films exhibited a crystalline phase with (400) and (101) preferred orientations at 2 θ = 26.24° and 35.18°, respectively. The photocurrent-voltage (I-V) characteristics of the DSSCs were measured under AM 1.5 and 100 mW/cm² (1 sun) by using a solar simulator. The DSSC fabricated on the ITO film with a 0.1-nm-thick SiO₂ film showed a Voc of 0.697 V, J_sc of 10.596 mA/cm² , FF of 66.423, and calculated power conversion efficiency (η_AM1.5) of 5.259%, which was the maximum value observed in this study.

• 한국전기전자재료학회논문지
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• 제23권9호
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• pp.681-684
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• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.

• Transactions on Electrical and Electronic Materials
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• 제14권6호
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• pp.321-323
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• 2013

100 nm thick Ga doped ZnO (GZO) thin films were deposited with DC and RF magnetron sputtering at room temperature on glass substrate and Al coated glass substrate, respectively. and the effect of the Al underlayer on the optical and electrical properties of the GZO films was investigated. As-deposited GZO single layer films had an optical transmittance of 80% in the visible wavelength region, and sheet resistance of 1,516 ${\Omega}/{\Box}$, while the optical and electrical properties of GZO/Al bi-layered films were influenced by the thickness of the Al buffer layer. GZO films with 2 nm thick Al film show a lower sheet resistance of 990 ${\Omega}/{\Box}$, and an optical transmittance of 78%. Based on the figure of merit (FOM), it can be concluded that the thin Al buffer layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.478-480
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• 2001

Fe-base amorphous films exhibit large saturation magnetostriction and soft magnetic Properties, which make them suitable for strain sensor applications. Most important material properties for the performance of these elements are the superior soft magnetic properties, such as high permeability and small coercive force, as well as magnetoelastic properties. It is well known that the strain generated in film deposition and/or post-heat treatment processes is one of important material properties, which effects on the soft magnetic properties of the film via magnetoelastic coupling. In this study, the effect of an isotropic strain in plane of magnetic films have been performed experimently. Amorphous films with the composition of (F $e_{90}$ $Co_{10}$)$_{78}$S $i_{l2}$ $B_{10}$ were employed in this study. The film with 5${\mu}{\textrm}{m}$ thick was deposed onto the polyimide substrate with 50${\mu}{\textrm}{m}$ thick by virtue of RF sputtering. The film was subject to post annealing with a static magnetic field with 500Oe magnetic field intensity at 35$0^{\circ}C$ for 1 hour. The polyimide substrate with the film was bonded with an adhesive on PZT piezoelectric substrate with 600${\mu}{\textrm}{m}$ thick in applying voltage of 500V. The change in MH loops of films due to the isotropic strain was measured by using VSM. The coercive force was evaluated from MH loops. It has shown in the results that M-H loops of films are subject to change considerably with a dc voltage, resulting of the magnetization rotation from normal to plane direction as the applied voltage is changed from 500V to 250V.50V.V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.208-208
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• 2010

Indium zinc tin oxide (IZTO) thin films were studied as a possible alternative to indium tin oxide (ITO) films for providing low-cost transparent conducting oxide (TCO) for thin film photovoltaic devices. IZTO films were deposited onto glass substrates at room temperature. A dc/rf magnetron co-sputtering system equipped with a ceramic target of the same composition was used to deposit TCO films. Earlier studies showed that the resistivity value of $In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20) films could be lowered to approximately $6{\times}10^{-4}ohm{\cdot}cm$ without sacrificing optical transparency and still maintaining amorphous structure through the optimization of process variables. The growth rate was kept at about 8 nm/min while the oxygen-to-argon pressure ratio varied from 0% to 7.5%. As-deposited films were always amorphous and showed strong oxygen pressure dependence of electrical resistivity and electron concentration values. Influence of forming gas anneal (FGA) at medium temperatures was also studied and proven effective in improving electrical properties. In this study, the chemical composition of the targets and the films varied around the $In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20). It was the main objective of this paper to investigate how off-stoichiometry affected TCO characteristics including electrical resistivity and optical transmission. In addition to the composition effect, we have also studied how film properties changed with processing variables. IZTO thin films have shown their potential as a possible alternative to ITO thin films, in such way that they could be adopted in some applications where currently ITO and IZO thin films are being used. Our experimental results are compared to those obtained for commercial ITO thin films from solar cell application view point.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.44-47
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• 2012

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.478.1-478.1
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• 2014

We investigated $MoO_3$ graded ITO electrodes for organic solar cells (OSCs) without PEDOT:PSS buffer layer. The effect of $MoO_3$ thickness on the electrical, optical, and structural properties of $MoO_3$ graded ITO anodes prepared by RF/DC magnetron co-sputtering system using $MoO_3$ and ITO targets was investigated. At optimized conditions, we obtained $MoO_3$ graded ITO electrodes with a low sheet resistance of 13 Ohm/square, a high optical transmittance of 83% and a work function of 4.92 eV, comparable to conventional ITO films. Due to the existence of $MoO_3$ on the ITO electrodes, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer successfully operated. Although OSCs fabricated on ITO anode without buffer layer showed a low power conversion efficiency of 1.249%, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer showed a outstanding cell performance of 2.545%. OSCs fabricated on the $MoO_3$ graded ITO electrodes exhibited a fill factor of 61.275%, a short circuit current of 7.439 mA/cm2, an open circuit voltage of 0.554 V, and a power conversion efficiency of 2.545%. Therefore, $MoO_3$ graded ITO electrodes can be considered a promising transparent electrode for cost efficient and reliable OSCs because it could eliminate the use of acidic PEDOT:PSS buffer layer.