• Title/Summary/Keyword: DC/RF sputtering

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Soft Magnetic Properties of Fe/Co Multilayer Films (Fe/Co다층박막의 연자기적 성질)

  • Kim, Taek-Su;Im, Yeong-Eon;Kim, Jong-O
    • Korean Journal of Materials Research
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    • v.4 no.8
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    • pp.952-957
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    • 1994
  • Fe/Co and FeN/CoN multilayer films were prepared by using RF and DC magnetron sputter^ ing technique with Ar or a mixture of Ar and $N_{2}$ gas. Annealing treatment was carried out in a vacuum at temperatures between $100^{\circ}C$ and $500^{\circ}C$ for lhour. Saturation magnetization (MS) and coercivity (Hc) of Fe/Co mutilayer films were investigated as a function of Fe layer thickness and annealing temperature. Permeability ($\mu$) was also examined. Saturation magnetization of 1.8T and coercivity of 1.80e were obtained for the as-deposited Fe/Co($70 \AA /15 \AA$) multilayer film. The Coercivity(Hc) did not change from 1.8 Oe till the annealing temperature $250^{\circ}C$ and then increased rapidly at higher annealing temperatures above $300^{\circ}C$. Coercivity(Hc) measured for the as-deposited FeN/CoN multilayer film was 5 Oe. It decreased gradually with annealing up to $250^{\circ}C$, and then increased rapidly at higher tempera tures.

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Variation of GMR Properties with Ar Pressure and Co Interlayer Thickness in Ta/NiFe/Co/Cu/Co/NiFe/FeMn Spin Valve Structures (Ta/NiFe/Co/Cu/Co/NiFe/FeMn 스핀밸브구조에서 Ar 압력과 Co 사이층 두께에 따른 GMR 특성 변화)

  • 최연봉;류상현;조순철
    • Journal of the Korean Magnetics Society
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    • v.9 no.2
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    • pp.98-103
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    • 1999
  • We have studied changes of coercivity $(H_c)$, exchange anisotropy field $(H_{ex})$ and MR ration in glass/Ta/NiFeI/CoI(t)/Cu/CoII(3/4 t)/NiFeII/FeMn spin valve structures by changing Ar pressure and thicknesses of Co layers using DC, RF sputtering methods. We obtained minimum coercivity of 2.8 Oe at 4 mTorr of Ar pressure, exchange anisotropy field of 50.0 Oe at 6 mTorr and 5.3 % of MR ratio at 10 mTorr. Also, we obtained 3.0 Oe of coercivity at 40 $\AA$ of CoI layer, 65.9 Oe at 13 $\AA$ and 4.7 % of MR ratio at 27 $\AA$ and 34 $\AA$ by changing the thicknesses of Co layers.

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Figure of merit and bending characteristics of Mn-SnO2/Ag/Mn-SnO2 tri-layer film (Mn-SnO2/Ag/Mn-SnO2 3중 다층막의 성능지수와 밴딩 특성)

  • Cho, Youngsoo;Jang, Guneik
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.4
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    • pp.190-195
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    • 2021
  • Typical Mn-SnO2/Ag/Mn-SnO2 tri-layer films were prepared on a PET substrate by RF/DC magnetron sputtering method at room temperature. Based on EMP simulation, the thicknesses of the top and bottom Mn-doped SnO2 layers were kept at 40 nm and the Ag layer was maintained at 13 nm for continuous electrical conduction. The experimentally measured optical transmittances at 550 nm wavelength were ranged from 82.9 to 88.1 % and sheet resistances were varied from 5.9 to 6.9 Ω/☐. The highest value of figure of merit, ϕTC was 48.1 × 10-3 Ω-1. Based on bending test under 4 and 5 mm of inner and outer curvature radius condition, tri-layer film resistance varies only by approximately 1.5 % after 10,000 bending cycles, showing excellent mechanical flexibility.

Effect of the Cu Bottom Layer on the Optical and Electrical Properties of In2O3/Cu Thin Films (구리 기저 층이 In2O3/Cu 박막의 광학적, 전기적 특성에 미치는 영향)

  • Kim, Dae-Il
    • Journal of the Korean Vacuum Society
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    • v.20 no.5
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    • pp.356-360
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    • 2011
  • Indium oxide ($In_2O_3$) single layer and $In_2O_3$/copper (Cu) bi-layer films were prepared on glass substrates by RF and DC magnetron sputtering without intentional substrate heating. In order to determine the effect of the Cu bottom layer on the optical, electrical and structural properties of $In_2O_3$ films, 3-nm-thick Cu film was deposited on the glass substrate prior to deposition of the $In_2O_3$ films. As-deposited $In_2O_3$ films had an optical transmittance of 79% in the visible wavelength region and a sheet resistance of 2,300 ${\Omega}/{\square}$, while the $In_2O_3$/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. $In_2O_3$/Cu films had a lower sheet resistance of 110 ${\Omega}/{\square}$ and an optical transmittance of 71%. Based on the figure of merit, it can be concluded that the Cu bottom layer effectively increases the performance of $In_2O_3$ films for use as transparent conducting oxides in flexible display applications.

Effect of RuO$_2$ Thin Film Microstructure on Characteristics of Thin Film Micro-supercapacitor ($RuO_2$박막의 미세 구조가 박막형 마이크로 슈퍼캐패시터의 특성에 미치는 영향)

  • Kim, Han-Ki;Yoon, Young-Soo;Lim, Jae-Hong;Cho, Won-Il;Seong, Tae-Yeon;Shin, Young-Hwa
    • Korean Journal of Materials Research
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    • v.11 no.8
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    • pp.671-678
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    • 2001
  • All solid-state thin film micro supercapacitor, which consists of $RuO_2$/LiPON/$RuO_2$ multi layer structure, was fabricated on Pt/Ti/Si substrate using a $RuO_2$ electrode. Bottom $RuO_2$ electrode was grown by dc reactive sputtering system with increasing $O_2/[Ar+O_2]$ ratio at room temperature, and a LiPON electrolyte film was subsequently deposited on the bottom $RuO_2$ electrode at pure nitrogen ambient by rf reactive sputtering system. Room temperature charge-discharge measurements based on a symmetric $RuO_2$/LiPON/$RuO_2$ structure clearly demonstrates the cyclibility dependence on the microstructure of the $RuO_2$ electrode. Using both glancing angle x-ray diffraction (GXRD) and transmission electron microscopy (TEM) analysis, it was found that the microstructure of the $RuO_2$ electrode was dependent on the oxygen flow ratio. In addition, x- ray photoelectron spectroscopy(XPS) examination shows that the Ru-O binding energy is affected by increasing oxygen flow ratio. Furthermore, TEM and AES depth profile analysis after cycling demonstrates that the interface layer formed by interfacial reaction between LiPON and $RuO_2$ act as a main factor in the degradation of the cyclibility of the thin film micro-supercapacitor.

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Fabrication of FBAR (SMR) using Reflector (반사층을 이용한 FBAR(SMR)의 제조)

  • Lee, Jae-Bin;Kwak, Sang-Hyon;Kim, Hyeong-Joon;Park, Hee-Dae;Kim, Young-Sik
    • Korean Journal of Materials Research
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    • v.9 no.12
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    • pp.1263-1269
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    • 1999
  • An FBAR(Solidly Mounted Resonator) was fabricated using reflector layers which prohibit the penetration of bulk acoustic wave into substrate. The SMR consisted of top and bottom electrodes(Al films), a piezoelectric layer (ZnO film), reflector layers(W/$Si_2$ films) and Si substrate. The electrodes were deposited by dc sputtering. The piezoelectric layer and the reflector layers were deposited by rf magnetron sputtering. The control of crystallinity, microstructures and electric properties of each layer was essential for attaining the optimum FBAR characteristics. Under the best deposition conditions for FBAR devices, the ZnO films had highly c-axis preferred orientation(${\sigma}=2.17^{\circ}$), resistivity of $10^4\;{\omega}cm$, and surface roughness of 10.6 ${\AA}$. On the other hand, the surface roughness of W and $Si_2$ films was 16 ${\AA}$ and 33 ${\AA}$, respectively, and the resistivity of Al film was $5.1{\times}10^{-6}\;{\Omega}cm$. The SMR devices were fabricated by the conventional semiconductor processes. In the resonance conditions of the SMR, the series resonance frequency (fs) and the parallel resonance frequency(fp) were 1.244 GHz and 1.251 GHz, respectively and the quality factor(Q) was 1200.

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Evaluations of Si based ternary anode materials by using RF/DC magnetron sputtering for lithium ion batteries

  • Hwang, Chang-Muk;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.302-303
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    • 2010
  • Generally, the high energy lithium ion batteries depend intimately on the high capacity of electrode materials. For anode materials, the capacity of commercial graphite is unlike to increase much further due to its lower theoretical capacity of 372 mAhg-1. To improve upon graphite-based negative electrode materials for Li-ion rechargeable batteries, alternative anode materials with higher capacity are needed. Therefore, some metal anodes with high theoretic capacity, such as Si, Sn, Ge, Al, and Sb have been studied extensively. This work focuses on ternary Si-M1-M2 composite system, where M1 is Ge that alloys with Li, which has good cyclability and high specific capacity and M2 is Mo that does not alloy with Li. The Si shows the highest gravimetric capacity (up to 4000mAhg-1 for Li21Si5). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. Si thin film is more resistant to fracture than bulk Si because the film is firmly attached to the substrate. Thus, Si film could achieve good cycleability as well as high capacity. To improve the cycle performance of Si, Suzuki et al. prepared two components active (Si)-active(Sn, like Ge) elements film by vacuum deposition, where Sn particles dispersed homogeneously in the Si matrix. This film showed excellent rate capability than pure Si thin film. In this work, second element, Ge shows also high capacity (about 2500mAhg-1 for Li21Ge5) and has good cyclability although it undergoes a large volume change likewise Si. But only Ge does not use the anode due to its costs. Therefore, the electrode should be consisted of moderately Ge contents. Third element, Mo is an element that does not alloys with Li such as Co, Cr, Fe, Mn, Ni, V, Zr. In our previous research work, we have fabricated Si-Mo (active-inactive elements) composite negative electrodes by using RF/DC magnetron sputtering method. The electrodes showed excellent cycle characteristics. The Mo-silicide (inert matrix) dispersed homogeneously in the Si matrix and prevents the active material from aggregating. However, the thicker film than $3\;{\mu}m$ with high Mo contents showed poor cycling performance, which was attributed to the internal stress related to thickness. In order to deal with the large volume expansion of Si anode, great efforts were paid on material design. One of the effective ways is to find suitably three-elements (Si-Ge-Mo) contents. In this study, the Si based composites of 45~65 Si at.% and 23~43 Ge at.%, and 12~32 Mo at.% are evaluated the electrochemical characteristics and cycle performances as an anode. Results from six different compositions of Si-Ge-Mo are presented compared to only the Si and Ge negative electrodes.

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Preparation of $SrTiO_3$ Thin Film by RF Magnetron Sputtering and Its Dielectric Properties (RF 마그네트론 스퍼터링법에 의한 $SrTiO_3$박막제조와 유전특성)

  • Kim, Byeong-Gu;Son, Bong-Gyun;Choe, Seung-Cheol
    • Korean Journal of Materials Research
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    • v.5 no.6
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    • pp.754-762
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    • 1995
  • Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.

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Amorphous Indium-Tin-Zinc-Oxide (ITZO) Thin Film Transistors

  • Jo, Gwang-Min;Lee, Gi-Chang;Seong, Sang-Yun;Kim, Se-Yun;Kim, Jeong-Ju;Lee, Jun-Hyeong;Heo, Yeong-U
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.170-170
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    • 2010
  • Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

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Yttrium 도핑 IGZO 채널층을 적용한 TFT 소자의 전기적, 안정성 특성 개선

  • Kim, Do-Yeong;Song, Pung-Geun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.214.1-214.1
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    • 2015
  • Thin-film transistors (TFTs)의 채널층으로 널리 쓰이는 indium-gallium-zinc oxide (IGZO)는 높은 전자 이동도(약 10 cm2/Vs)를 나타내며 유기 발광 다이오드디스플레이(OLED)와 대면적 액정 디스플레이(LCD)에 필수적으로 사용되고 있다. 하지만, 이러한 재료는 우수한 TFT의 채널층의 특성을 가지는 반면, ZnO 기반 재료이기 때문에 소자 구동에서의 안정성은 가장 큰 문제로 남아있다. 따라서 최근, IGZO layer의 특성을 향상시키기 위한 연구가 다양한 방법으로 시도되고 있다. IGZO의 조성비를 조절하여 전기적 특성을 최적화거나 IGZO layer의 조성 중 Ga을 다른 금속 메탈로 대체하는 연구도 이루어지고 있다. 그러나 IGZO에 미량의 도펀트를 첨가하여 박막 특성 변화를 관찰한 연구는 거의 진행되지 않고 있다. 산화물 TFTs의 전기적 특성과 안정성은 산소 함량에 영향을 많이 받는 것으로 알려져 있으며, 더욱이 TFT 채널층으로 쓰이는 IGZO 박막의 고유한 산소 공공은 디바이스 작동 중 열적으로 활성화 되어 이온화 상태가 될 때 소자의 안정성을 저하시키는 것이 문제점으로 지적되고 있다. 그러므로 본 연구에서는 낮은 전기 음성도(1.22)와 표준전극전위(-2.372 V)를 가지며 산소와의 높은 본드 엔탈피 값(719.6 kJ/mol)을 가짐으로써 산소 공공생성을 억제할 것으로 기대되는 yttrium을 IGZO의 도펀트로 도입하였다. 따라서 본 연구에서는 Y-IGZO의 박막 특성 변화를 관찰하고자 한다. 본 연구에서는 magnetron co-sputtering법으로 IGZO 타깃(DC)과 Y2O3 타깃(RF)를 이용하여 기판 가열 없이 동시 방전을 이용해 non-alkali glass 기판 위에 증착 하였다. IGZO 타깃은 DC power 110 W으로 고정하였으며 Y2O3 타깃에는 RF Power를 50 W에서 110 W까지 증가시키면서 Y 도핑량을 조절하였다. Working pressure는 고 순도 Ar을 20 sccm 주입하여 0.7 Pa로 고정하였다. 모든 실험은 $50{\times}50mm$ 기판 위에 총 두께 $50nm{\pm}2$ 박막을 증착 하였으며, 그 함량에 따른 전기적 특성 및 광학적 특성을 살펴보았다. 또한, IGZO 박막 제조 시 박막의 안정화를 위해 열처리과정은 필수적이다. 하지만 본 연구에서는 열처리를 진행하지 않고 Y-IGZO의 안정성 개선 여부를 보기 위하여 20일 동안 상온에서 방치하여 그 전기적 특성변화를 관찰하였다. 나아가 Y-IGZO 채널 층을 갖는 TFT 소자를 제조하여 소자 구동 특성을 관찰 하였다. Y2O3 타깃에 가해지는 RF Power가 70 W 일 때 Y-IGZO박막은 IGZO박막과 비교하여 상대적으로 캐리어 밀도는 낮은 반면 이동도는 높은 최적 특성을 얻을 수 있었다. 상온방치 결과 Y-IGZO박막은 IGZO박막에 비해 전기적 특성 변화 폭이 적었으며 이것은 Y 도펀트에 의한 안정성 개선의 결과로 예상된다. 투과도는 Y 도핑에 의하여 약 1.6 % 정도 상승하였으며 밴드 갭 내에서 결함 준위로 작용하는 산소공공의 억제로 인한 결과로 판단된다.

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