• 제목/요약/키워드: DC/DC

검색결과 13,292건 처리시간 0.039초

Analysis of a Weak Zone in Embankment Close to a Drainage using Resistivity Monitoring Data (전기비저항 모니터링을 이용한 저수지 제체 취수시설 취약성 해석)

  • Lim, Sung Keun
    • Geophysics and Geophysical Exploration
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    • 제21권1호
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    • pp.8-14
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    • 2018
  • For the purpose of maintenance and prevention of earth fill dams against damage from natural hazards, automatic monitoring through various measuring instruments and resistivity survey has been carried out. Reservoirs and embankments have the structural vulnerability on the agricultural usages since most of them were built more than thirty years ago. The main aim to use monitoring method is to verify the safety and integrity of the dam. Resistivity survey can detect potential weaknesses, such as defective zones, anomalous seepages or internal erosion processes. Permanent resistivity monitoring systems were installed at a reservoir, which daily measurements have been taken every 6 hour. Using monitoring data for one year, anomalous seepage and structural defects were clarified for dam safety. Annual water level fluctuations are around 10 m. During their operation, reservoir dams are subject to a never-ending hydraulic load from the reservoir, which over the years may cause changes in the properties of the inner parts of the dam construction. Detailed analysis of the monitoring results was performed and showed that resistivities at most locations have been very stable over the full monitoring period excluding the effects of water fluctuation and seasons. To investigate the detectability of weak zone using the DC resistivity monitoring, numerical modeling with a simplified model for the drainage at a reservoir dam was also performed. The results showed that the seepage zone near drainage in a reservoir dam could be detected by resistivity response change.

Ti:LiNbO3 three-waveguide type traveling-wave optical modulator; outer fed, anti-symmetrical Detuning (Ti:LiNbO3 세 도파로형 진행파 광변조기;바깥입사, 반대칭 Detuning)

  • 이우진;정은주;피중호;김창민
    • Korean Journal of Optics and Photonics
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    • 제15권4호
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    • pp.375-384
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    • 2004
  • Switching phenomenon of a three-waveguide optical coupler was analyzed by using the coupled mode theory, and the coupling-length of the device was calculated by means of the FDM. CPW traveling-wave electrodes were designed by the CMM and SOR simulation techniques so as to satisfy the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on a z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electroplating technique. Insertion loss and switching voltage of the optical modulator were about 4 ㏈ and 15.6V. Network analyzer was used to obtain S parameters and corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted as such Z$_{c}$=39.2 $\Omega$, Neff=2.48, and a0=0.0665/cm((GHz) (1/2)). The measured optical response R(w) was compared with the theoretically estimated and both responses were shown to agree well. The measurement results revealed that the ㏈ bandwidth turned out to be about 13 GHz.

PEMOCVD of Ti(C,N) Thin Films on D2 Steel and Si(100) Substrates at Low Growth Temperatures

  • Kim, Myung-Chan;Heo, Cheol-Ho;Boo, Jin-Hyo;Cho,Yong-Ki;Han, Jeon-Geon
    • Proceedings of the Korean Vacuum Society Conference
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.211-211
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    • 1999
  • Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

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레이저 유도 형광법(Laser Induced Fluorescence)을 이용한 플라즈마 방전 표시기(Plasma Display Panel)내의 전계 측정에 관한 연구

  • 김정훈;이준학;최영욱;양진호;황기웅
    • Proceedings of the Korean Vacuum Society Conference
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.232-232
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    • 1999
  • 교류형 플라즈마 방전 표시기(AC Plasma Display Panel, AC PDP)에 사용되는 플라즈마는 그 부피가 너무 작아서 플라즈마에 변화를 일으키지 않고 그 물성을 관측하기란 쉬운일이 아니다. 그래서 주로 PDP 내의 물성을 관측하는 데 시뮬레이션에 의존하게 된다. 그 물성중에 PDP내의 전계 분포에 대한 정보는 방전의 형성 및 소멸에 대한 많은 단서를 제공하고 있다. 특히 AC PDP의 경우, 유전체에 형성되는 벽적하(wall charge)가 방전의 형성 및 PDP 구동에 중요한 역할을 하는데, 이는 PDP 내의 전계 분포를 살펴봄으로써 대략 예측할 수 있다. 본 연구에서는 시뮬레이션에 의존하지 않고, 직접 레이저 유도 형광법을 이용하여 AC PDP 내의 전계를 측정하였다. 방전 가스인 헬륨(He)의 에너지 준위는 전계의 크기에 따라 에너지 준위가 변화하여, Rydberg(n$\geq$8) 준위가 여러 개의 준위로 나누어지는 현상이 일어나는데, 이를 Stack 효과라고 한다. 따라서 전계의 세기가 커짐에 따라서 각 준위와 준위 사이 값(splitting)이 커지는데, 이를 이용하면 전계를 측정할 수 있다. 즉, 헬륨 원자를 여기시키는 레이저 파장을 변화시키면서 관측되는 레이저 유도 형광 신호를 관측하면, 준위의 splitting을 관측할 수 있다. 본 연구에서는 PDP 내의 전계의 시간적 변화를 관측하였다. 50%, 40kHz의 구형파를 PDP의 두 전극에 가하였을 때, 플라즈마가 켜진 상태뿐만 아니라 플라즈마가 꺼진 후에도 전계에 의한 Splitting 신호가 관측이 되었는데, 전계로 환산하였을 때, 그 값은 대략 수 kV/cm의 값을 갖았는데, 이는 wall charge에 의한 값으로 사료된다.결과로 생각되어진다.플라즈마의 강도값을 입력하여 플라즈마의 radiation을 검출하고, 스퍼터링 공정중 실질적인 in-situ 정보로 이용하였다. PEM을 통하여 In/Sn의 플라즈마 강도변화를 조사하였다. 초기 In/Sn의 플라즈마 강도(intensity)는 강도를 100하여, 산소를 주입한 결과, plasma intensity가 35 줄어들었고, 이때 우수한 ITO 박막을 얻을 수 있었다. Pulsed DC power를 사용하여 아크 현상을 방지하였다. PET 상에 coating 된 ITO 박막의 표면저항과 광투과도는 4-point prove와 spectrophotometer를 이용하여 분석하였고, AES로 박막의 두께에 따른 성분비를 확인하였다. ITO 박막의 광투과도는 산소의 유량과 sputter 된 In/Sn ion의 plasma emission peak에 따라 72%-92%까지 변화하였으며, 저항은 37$\Omega$/$\square$ 이상을 나타내었다. 박막의 Sn/In atomic ratio는 0.12, O/In의 비율은 In2O3의 화학양론적 비율인 1.5보다 작은 1.3을 나타내었다.로 보인다.하면 수평축과 수직축의 분산 장벽의 비에 따라 cluster의 두께비가 달라지는 성장을 볼 수 있었고, 한 축 방향으로의 팔 넓이는 fcc(100) 표면의 경우 동일한 Ed+Ep값에 대응하는 팔 넓이와 거의 동일한 결과가 나타나는 것을 볼 수 있다. 따라서 이러한 비대칭적인 모양을 가지는 성장의 경우도 cluster 밀도, cluster 모양, cluster의 양 축 방향 길이 비, 양 축 방향의 평균 팔 넓이로부터 각 축 방향의 분산 장벽을 얻어낼 수 있을 것으로 보인다. 기대할 수 있는 여러

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Electrochemical Characteristics of Nanotubular Ti-25Nb-xZr Ternary Alloys for Dental Implant Materials

  • Byeon, In-Seop;Park, Seon-Young;Choe, Han-Cheol
    • Journal of Korean Dental Science
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    • 제10권1호
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    • pp.10-21
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    • 2017
  • Purpose: The purpose of this study was to investigate the electrochemical characteristics of nanotubular Ti-25Nb-xZr ternary alloys for dental implant materials. Materials and Methods: Ti-25Nb-xZr alloys with different Zr contents (0, 3, 7, and 15 wt.%) were manufactured using commercially pure titanium (CP-Ti), niobium (Nb), and zirconium (Zr) (99.95 wt.% purity). The alloys were prepared by arc melting in argon (Ar) atmosphere. The Ti-25Nb-xZr alloys were homogenized in Ar atmosphere at $1,000^{\circ}C$ for 12 hours followed by quenching into ice water. The microstructure of the Ti-25Nb-xZr alloys was examined by a field emission scanning electron microscope. The phases in the alloys were identified by an X-ray diffractometer. The chemical composition of the nanotube-formed surfaces was determined by energy-dispersive X-ray spectroscopy. Self-organized $TiO_2$ was prepared by electrochemical oxidation of the samples in a $1.0M\;H_3PO_4+0.8wt.%$ NaF electrolyte. The anodization potential was 30 V and time was 1 hour by DC supplier. Surface wettability was evaluated for both the metallographically polished and nanotube-formed surfaces using a contact-angle goniometer. The corrosion properties of the specimens were investigated using a 0.9 wt.% aqueous solution of NaCl at $36^{\circ}C{\pm}5^{\circ}C$ using a potentiodynamic polarization test. Result: Needle-like structure of Ti-25Nb-xZr alloys was transform to equiaxed structure as Zr content increased. Nanotube formed on Ti-25Nb-xZr alloys show two sizes of nanotube structure. The diameters of the large tubes decreased and small tubes increased as Zr content increased. The lower contact angles for nanotube formed Ti-25NbxZr alloys surfaces showed compare to non-nanotube formed surface. The corrosion resistance of alloy increased as Zr content increased, and nanotube formed surface showed longer the passive regions compared to non-treatment surface. Conclusion: It is confirmed that corrosion resistance of alloy increased as Zr content increased, and nanotube formed surface has longer passive region compared to without treatment surface.

High Gain and Broadband Millimeter-wave MHEMT Cascode Amplifier (고이득 및 광대역 특성의 밀리미터파 MHEMT Cascode 증폭기)

  • An, Dan;Lee, Bok-Hyung;Lim, Byeong-Ok;Lee, Mun-Kyo;Baek, Yong-Hyun;Chae, Yeon-Sik;Park, Hyung-Moo;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • 제41권8호
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    • pp.105-111
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    • 2004
  • In this paper, millimeter-wave high gain and broadband MHEMT cascode amplifiers were designed and fabricated. The 0.1 ${\mu}{\textrm}{m}$ InGaAs/InAlAs/GaAs Metamorphic HEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(f$_{T}$) is 173 GHz and the maximum oscillation frequency(f$_{max}$) is 271 GHz. By using the CPW transmission line, the cascode amplifier was designed the matched circuit for getting the broadband characteristics. The designed amplifier was fabricated by the MHEMT MIMIC process that was developed through this research. As the results of measurement, the 1 stage amplifier obtained 3 dB bandwidth of 37 GHz between 31.3 to 68.3 GHz. Also, this amplifier represents the S21 gain with the average 9.7 dB gain in bandwidth and the maximum gain of 11.3 dB at 40 GHz. The 2 stage amplifier has the broadband characteristics with 3 dB bandwidth of 29.5 GHz in the frequency range from 32.5 to 62.0 GHz. The 2 stage cascode amplifier represents the high gain characteristics with the average gain of 20.4 dB in bandwidth and the maximum gain of 22.3 dB at 36.5 GHz.z.z.

A Design Of Cross-Shpaed CMOS Hall Plate And Offset, 1/f Noise Cancelation Technique Based Hall Sensor Signal Process System (십자형 CMOS 홀 플레이트 및 오프셋, 1/f 잡음 제거 기술 기반 자기센서 신호처리시스템 설계)

  • Hur, Yong-Ki;Jung, Won-Jae;Lee, Ji-Hun;Nam, Kyu-Hyun;Yoo, Dong-Gyun;Yoon, Sang-Gu;Min, Chang-Gi;Park, Jun-Seok
    • Journal of the Institute of Electronics and Information Engineers
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    • 제53권5호
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    • pp.152-159
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    • 2016
  • This paper describes an offset and 1/f noise cancellation technique based hall sensor signal processor. The hall sensor outputs a hall voltage from the input magnetic field, which direction is orthogonal to hall plate. The two major elements to complete the hall sensor operation are: the one is a hall sensor to generate hall voltage from input magentic field, and the other one is a hall signal process system to cancel the offset and 1/f noise of hall signal. The proposed hall sensor splits the hall signal and unwanted signals(i.e. offset and 1/f noise) using a spinning current biasing technique and chopper stabilizer. The hall signal converted to 100 kHz and unwanted signals stay around DC frequency pass through chopper stabilizer. The unwanted signals are bloked by highpass filter which, 60 kHz cut off freqyency. Therefore only pure hall signal is enter the ADC(analog to dogital converter) for digitalize. The hall signal and unwanted signal at the output of an amplifer and highpass filter, which increase the power level of hall signal and cancel the unwanted signals are -53.9 dBm @ 100 kHz and -101.3 dBm @ 10 kHz. The ADC output of hall sensor signal process system has -5.0 dBm hall signal at 100 kHz frequency and -55.0 dBm unwanted signals at 10 kHz frequency.

Low-Power Operation Method of Thermal-Energy Harvesting Sensor Circuit (Thermal Energy Harvesting용 센서회로의 저전력 구동 방법)

  • Nam, Hyun Kyung;Pham, Van Khoa;Tran, Bao Son;Nguyen, Van Tien;Min, Kyeong-Sik
    • Journal of IKEEE
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    • 제22권3호
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    • pp.842-845
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    • 2018
  • In this paper, we propose low-power operational methods for thermal-energy-harvesting sensor circuits. Here, the amount of harvested current has been measured as low as 8uA. However the DC power consumption of the sensor circuit is known to consume much larger than 8uA. Thus, We propose the hardware-based power gating and software-based active/sleep timing control schemes, respectively, for controlling the power consumption of sensor circuit. In the hardware-based power gating scheme, if the ratio of Toff/Ton is larger than 22, the sensor can consume less than 8uA. For the software-based active/sleep control scheme, if the ratio of Tslp/Tact is larger than 3, we can suppress the current consumption below 8uA. The hardware-based and software-based schemes proposed in this paper would be helpful in various applications of energy-harvesting sensor circuits, where the power consumption is limited by an amount of harvested energy.

A Study on the Fabrication of the Sensor Module for the Detection of Resistive Leakage Current (Igr) in Real Time and Its Reliability Evaluation (실시간 Igr 검출을 위한 센서 모듈의 제작 및 신뢰성 평가에 관한 연구)

  • Lee, Byung-Seol;Choi, Chung-Seog
    • Journal of the Korean Society of Safety
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    • 제33권1호
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    • pp.28-34
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    • 2018
  • The purpose of this study is to fabricate a sensor module to detect the resistive leakage current (Igr) in real time that occurs to low voltage electric lines and to verify its reliability. In the case of the developed sensor module, wires are inserted into the zero current transformer (ZCT) and current transformer (CT) in advance and then the branch line is connected to the circuit breaker. The measurement result of the resistance of the distribution panel equipped with the developed sensor module shows that the resistance is $0.151m{\Omega}$ between the R and R phases, $0.169m{\Omega}$ between the S and S phases, and $0.178m{\Omega}$ between the T and T phases, respectively. The insulation resistance measured at AC 500 V and 1,000 V is $0.08m{\Omega}$ between the R, S, T and N phases, respectively. Then, the insulation resistance measured at DC 500 V is $83.3G{\Omega}$ between the R, S, T and G terminal, respectively. In addition, the applied withstanding voltage is AC 220 V/380 V/440 V and it was found that characteristics between all phases are good. This study measured the standby power by installing the developed sensor module at the rear of the MCCB and switching the circuit breaker on sequentially. The standby power is 1.350 W when one circuit breaker is turned on, 1.690 W when 2 circuit breakers are turned on, and 4.371 W when 10 circuit breakers are turned on. This study also verified the reliability of the standby power of the distribution panel equipped with the developed sensor module using the Minitab Program (Minitab PGM). Since the analysis shows the statistical average of 1.34627 in the reliable range of normal distribution, standard deviation of 0.001874, AD of 0.554, and P value of 0.140, it is found that the distribution panel equipped with the developed sensor module has high reliability.

Income Analysis on the Cultivation of Major Medicinal Herbs (주요 약초류 재배에 대한 소득분석)

  • Kang, Hag Mo;Chang, Cheol Su;Kim, Hyun;Choi, Soo Im
    • Journal of Korean Society of Forest Science
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    • 제104권3호
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    • pp.495-502
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    • 2015
  • This study intended to provide basic data required in establishing policies for improving the forestry management and the compensation standard for the loss from non-timber forest products by examining the cost of cultivating key medicinal herbs and the earnings from them to analyze the income. According to the income analysis on the cultivation of medicinal herbs, the average annual income per unit area of Adenophora triphylla var. japonica Hara was the highest as it recorded 14,233,000 won/10a and was followed by Pleuropterus multiflorus TURCZ. which recorded 4,121,000 won/10a, Gastrodia elata Blume 3,766,000 won/10a, Epimedium koreanum Nakai 3,537,000 won/10a, Atractylodes ovata (Thunb.) DC. 2,655,000 won/10a, Aralia continentalis Kitagawat 1,048,000 won/10a, Paeonia lactiflora Pallas 1,025,000 won/10a, and Bupleurum falcatum L. 919,000 won/10a. Compared with the income from major nuts and fruits analyzed in 2014, the average annual income per unit area for medicinal herbs was relatively higher. For Adenophora triphylla var. japonica Hara and Aralia continentalis Kitagawat, soots are used for food and the roots for medicine, it appears that it can become a new income source for the farming and mountain villages. Meanwhile, the price for Paeonia lactiflora Pallas is dropping due to Chinese imports, and also damage to the income from other medicinal herbs due to Chinese imports is expected with the implementation of Korea-China FTA in the future.