• The KIPS Transactions:PartD
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• v.11D no.1
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• pp.229-240
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• 2004

The National Education Information System (NEIS), one of ERP systems developed by Ministry of Education & Human Resources Development, has been utilized in primary and secondary schools. In this paper, we considered the NEIS should be used not only for educational administration affairs, but also for a lifelong management of National Human Resource. The current School Information Management System (SIMS) is unsatisfactory due to the insufficiency of actual field suitability and user's conveniency. For solving such problems, the system rebuilding or revision should be accompanied by. As a guideline of revision and supplement of the SIMS, we suggest an application useful in both schools and clinics by the integrating healthcare management information of people. For this, we propose a lifelong healthcare information management by integrating Student Health Records of the NEIS with Electronic Medical Records of doctors' offices. The healthcare information is designed and represented in XML. We applied different XSL style-sheets to XML documents in order to offer a view suitable for demands of schools and clinics. The healthcare information can be managed and utilized efficiently by using the view. We ascertained that the lifelong Healthcare Information Management System is an improvement to overcome the inefficiency of healthcare information management and the connection inadequacy between schools and medical institutions, and is desirable for a lifelong management of the National Human Resource.

• Molecules and Cells
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• v.40 no.9
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• pp.677-684
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• 2017

Postmenopausal atrophic vagina (PAV) is the thinning of the walls of the vagina and decreased lugae of the vagina. PAV is caused by decreased estrogen levels in postmenopausal women. However, the harmful effects of hormone replacement therapy (HRT) have resulted in considerable caution in its use. Various estrogen agonist treatment options are available. Vitamin D is influences the regulation of differentiation and proliferation of various cells, especially tissues lining stratified squamous epithelium, such as the vaginal epithelium. In this study, we hypothesized that vitamin D could provide an alternative and a safe treatment option for PAV by promoting the proliferation and differentiation of the vaginal epithelium. Thirty six patients were enrolled in this case-control study. Vitamin D associated proteins in a vitamin D and sex hormone treated vaginal epithelial cell line as well as normal and PAV tissues were measured. To confirm of cell-to-cell junction protein expression, cell line and tissue studies included RT-PCR, immunohistochemistry staining, and immunoblot analyses. The expression of cell-to-cell junction proteins was higher in women with symptoms of atrophic vagina tissue compared to women without the symptoms. Vitamin D stimulated the proliferation of the vaginal epithelium by activating p-RhoA and Erzin through the vitamin D receptor (VDR). The results suggest that vitamin D positively regulates cell-to-cell junction by increasing the VDR/p-RhoA/p-Ezrin pathway. This is the first study to verify the relationship of the expression of RhoA and Ezrin proteins in vaginal tissue of PAV.

• ETRI Journal
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• v.24 no.6
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• pp.455-461
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• 2002

This paper reports on estimating the Schottky barrier height of small contacts using a thermionic-field emission model. Our results indicate that the logarithmic plot of the current as a function of bias voltage across the Schottky diode gives a linear relationship, while the plot as a function of the total applied voltage across a metal-silicon contact gives a parabolic relationship. The Schottky barrier height is extracted from the slope of the linear line resulting from the logarithmic plot of current versus bias voltage across the Schottky diode. The result reveals that the barrier height decreases from 0.6 eV to 0.49 eV when the thickness of the barrier metal is increased from 500 ${\AA}$ to 900 ${\AA}$. The extracted impurity concentration at the contact interface changes slightly with different Ti thicknesses with its maximum value at about $2.9{\times}10^{20}\;cm^{-3}$, which agrees well with the results from secondary ion mass spectroscopy (SIMS) measurements.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.1-9
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• 1999

This paper presents a newly enhanced damage model in Monte Carlo (MC) simulation for the accurate prediction of 3-Dimensional (3D) as-implanted impurity and point defect profiles induced by ion implantation in (100) crystal silicon. An empirical electronic energy loss model for B, BF2, As, P and Si self implant over the wide energy range has been proposed for the ULSI device technology and development. Our model shows very good agreement with the SIMS data over the wide energy range. In the damage accumulation, we considered the self-annealing effects by introducing our proposed non-linear recomvination probability function of each point defect for the computational efficiency. For the damage profiles, we compared the published RBS/channeling data with our results of phosphorus implants. Our damage model shows very reasonable agreement with the experiments for phosphorus implants.

• Smart Structures and Systems
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• v.1 no.3
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• pp.235-256
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• 2005

The non-linear behaviour of electrorheological (ER) and magnetorheological (MR) dampers makes it difficult to design effective control strategies, and as a consequence a wide range of control systems have been proposed in the literature. These previous studies have not always compared the performance to equivalent passive systems, alternative control designs, or idealised active systems. As a result it is often impossible to compare the performance of different smart damper control strategies. This article provides some insight into the relative performance of two MR damper control strategies: on/off control and feedback linearisation. The performance of both strategies is benchmarked against ideal passive, semi-active and fully active damping. The study relies upon a previously developed model of an MR damper, which in this work is validated experimentally under closed-loop conditions with a broadband mechanical excitation. Two vibration isolation case studies are investigated: a single-degree-of-freedom mass-isolator, and a two-degree-of-freedom system that represents a vehicle suspension system. In both cases, a variety of broadband mechanical excitations are used and the results analysed in the frequency domain. It is shown that although on/off control is more straightforward to implement, its performance is worse than the feedback linearisation strategy, and can be extremely sensitive to the excitation conditions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.10
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• pp.1-10
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• 2000

A rigorous modeling of ultra-low energy implantation is becoming increasingly more important as devices shrink to deep submicron dimensions. In this paper, we have developed an efficient three-dimensional Monte Carlo ion implantation model based on a modified Binary Collision Approximation(BCA). To this purpose, the modified electronic stopping model and the multi-body collision model have been taken into account in this simulator. The dopant and damage profiles show very good agreement with SIMS(Secondary Ion Mass Spectroscopy) data and RBS(Rutherford Backscattering Spectroscopy) data, respectively. Moreover, the ion distribution replica method has been implemented into the model to get a computational efficiency in a 3D simulation, and we have calculated the 3D Monte Carlo simulation into the topographically complex structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.101-105
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• 2024

4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (R_on,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (D_it) at the SiO₂/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO₂/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N₂ diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N₂ gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO₂/4H-SiC interface, thereby reducing the D_it.

• Korean Journal of Materials Research
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• v.6 no.5
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• pp.483-488
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• 1996

InP 기판위에 InP와 격자정합된 undoped-InGaAs에서 zine의 확산 특성을 Electrochemical Capacitance-Voltage 법(polaron)과 Secondary Ion Mass Spectrometry(SIMS)로 조사하였다. Metallorganic Chemical Vapor Deposition (MOCVD)를 이용하여 undoped-InGaAs 층을 성장시켰으며 확산방법으로는 Zn3P2 확산원 박막과 Rapid Thermal Annealing (RTA)를 이용하였다. 450-55$0^{\circ}C$온도범위에서 30-300초 동안 확산을 수행한 결과 zinc의 확산계수는 D=Doexp(-$\Delta$E/kT)의 특성을 만족하였으며, Do와 $\Delta$E는 각각 1.3x105$\textrm{cm}^2$/sec와 2.3eV였다. 얻어진 확산계수는 다른 확산방법을 이용한 값들에 비해 매우 큰 값인데, 이것은 RTA 처리시 빠른 온도 증가에 의한 확산원 박막, 보호막, 그리고 InGaAs 에피층이 가지는 열팽창계수의 차이로인한 응력의 효과에 의한 것으로 생각되며, 이를 sealed-ampoule 법을 사용한 경우의 확산특성과 비교를 통하여 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.205-205
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• 2010

Recently, low temperature co-fired ceramic (LTCC) technology is widely used in sensors, actuators and microsystem fields because of its very good electrical and mechanical properties, high stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of on $O_2$ annealing treatment on the electrical properties of Pb(ZrTi)$O_3$ (PZT) thin films deposited on LTCC substrate. The LTCC substrates with thickness of $400\;{\mu}m$ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Au / LTCC substrates by RF magnetron sputtering method. The change of the crystallization of the films were investigated under various atmosphere. The structural variation of the films were analyzed by using X-Ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) and secondary ion mass spectrometry (SIMS).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.339.1-339.1
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• 2014

In this paper we studied the application of inter-poly dielectric as silicon dioxide-like film was deposited by the higher energy assisting deposition (HEAD) process the modified CCP process, which enables low temperature (LT) process and improving film density. In these experiments the relative hydrogen concentration of $SiO_2$-like films deposited on silicon substrate were analyzed by the secondary ion mass spectroscopy (SIMS) and it was shown that our lower hydrogenated oxide (LHO) film prepared by HEAD process with the precursor contained the siloxane species had lower hydrogen concentration, $8{\times}10{\cdot}^{22}cm{\cdot}^3$ than that of the commercial undoped silicon glass (USG) film ($1{\times}10{\cdot}^{21}cm{\cdot}^3$) prepared by the high density plasma-chemical vapor deposition (HDP-CVD). We consider that the LHO film deposited by HEAD process used as high performance material into Flash memory devices.