• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.169-172
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• 1998

A phyaical model of the Czochralski method for silicon single crystals is designed to measure the change of velocities and temperature profilles in the melt. Wood's metal(Bi 50%, Pb 26.7%, Sn 13.3%, Cd 10%, m.p. 70℃) is used to simulate the silicon melt in the crucible. To measure the local velocity change, electromagnetic probe is adopted as a velocity sensor. The output voltage of the sensor shows linear relationship to the velocity of the melt.

• Journal of Mechanical Science and Technology
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• v.15 no.12
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• pp.1876-1881
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• 2001

We present the numerical analysis of the growth of a silicon (Si) single crystal. In the MCZ (Magnetic-field-applied Czochralski) method, two magnetic fields that stand opposite to each other generate a cusp magnetic field. In this work, the three cusp magnetic fields used for the analysis are an extern magnetic field, a surface magnetic field and an internal magnetic field. Each case was evaluated mainly as to the degree of stirring, shaft symmetry and the stability of the flow. As a result, the cusp magnetic field that yielded to best conditions was the internal magneic field.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.3
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• pp.988-1004
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• 1996

The characteristics of flow and oxygen concentration are numerically studied in Czochralski 8" silicon crystal growing process considering radiative heat transfer. The analysis of net radiative heat flux on all relevant surfaces shows growing crystal affects the heater power. Furthermore, the variation of the radiative heat flux along the crystal surface in the growing direction is confirmed and should be a cause of thermal stress and defect of the crystal. The calculated distributions of temperature and, heat flux along the wall boundaries including melt/crystal interface, free surface and crucible wall indicate that the frequently used assumption of the thermal boundary conditions of insulated crucible bottom and constant temperature at crucible side wall is not suitable to meet the real physical boundary conditions. It is necessary, therefore, to calculate radiative heat transfer simultaneously with the melt flow in order to simulate the real CZ crystal growth. If only natural convection is considered, the oxygen concentration on the melt/crystal interface decreases and becomes uniform by the application of a cusp magnetic filed. The heater power needed also increases with increasing the magnetic field. For the case of counter rotation of the crystal and crucible, the magnetic field suppresses azimutal flow produced by the crucible rotation, which results in the higher oxygen concentration near the interface.

• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.350-355
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• 2009

The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.177-184
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• 2000

The effect of the buyancy and thermocapillarity for differnent aspect ratio of flow field on melt motion and mass transfer has been numerically investigated in magnetic Czochralski crystal growth of silicon. During the process of crystal growth, the melt depth of crucible reduces so the aspect ratio of flow field also reduces. Therefore the shape of magnetic field of the flow field changes and the flow pattern also changes significantly. Together with the melt flow which forms the Marangoni convection (or thermocapillary flow) that comes from the inside the flow field, a flow circulation is observed near the corner close both to the crucible wall and the free surface. Due to this circulation, buoyancy effect has been turned out to be local rather than global. As the aspect ratio decreases, the radial component of the magnetic field prevails compared with the axial component in the flow field. Under the influence of this magnetic field, the melt flow and the temperature distribution in a meridional plane tend to depend on the radial position. As the aspect ratio decreases, the temperature gradient near the edge of the crystal decreases yielding smaller thermocapillarity, and the oxygen concentration near the crystal and the oxygen incorporation rate also decrease.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.62-66
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• 2002

The conventional floating zone(FZ) crystal and Czochralski(CZ) silicon crystal have resistivity variations longitudinally as well as radially The resistivity variations of the conventional FZ and CZ crystal are not conformed to requirement of dopant distribution for power devices and thyristors. These resistivity variations in conventional cystals limits the reverse breakdown voltage that could be achieved and forced designers of high power diodes and thyristors to compromise the desired current-voltage characteristics. So to produce high Power diodes and thyristors, Neutron Transmutation Doping(NTD) technique is the one method just because NTD silicon provides very homogeneous distribution of doping concentration. This procedure involves the nuclear transmutation of silicon to phosphorus by bombardment of neutron to the crystal according to the reaction $^{30}$ Si(n,${\gamma}$)longrightarrow$^{31}$ Silongrightarrow(2.6 hr)$^{31}$ P+$\beta$$^{[-10]}$ . The radioactive isotope $^{31}$ Si is formed by $^{31}$ Si capturing a neutron, which then decays into the stable $^{31}$ P isotope (i.e., the donor atom), whose distribution is not dependent on the crystal growth parameters. In this research, neutron was irradiated on FZ silicon wafers which had high resistivity(1000~2000 Ω cm), for 26 and 8.3hours for samples of HTS-1 and HTS-2, and 13, 3.2, 2.0 hours for samples of IP-1, IP-2 and IP-3, respectively, to compare resistivity changes due to time differences. The designed resistivities were approached, which were 2.l Ωcm for HTS-1, 7.21 Ω cm for HTS-2, 1.792cm for IP-1, 6.83 Ωcm for IP-2, 9.23 Ωcm for IP-3, respectively. Point defects were investigated with Deep Level Transient Spectroscopy(DLTS). Four different defects were observed at 80K, 125K, 230K, and above 300K.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.55-60
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• 2001

The effect of high energy B ion implantation and initial oxygen concentration upon defect formation and gettering of metallic impurities in Czochralski silicon wafer has been studied by applying DLTS( Deep Level Transient Spectroscopy), SIMS(Secondary ton Mass Spectroscopy), BMD (Bulk Micro-Defect) analysis and TEM(Transmission Electron Microscopy). DLTS results show the signal of the deep levels not only in as-implanted samples but also in low and high temperature annealed samples. Vacancy-related deep levels in as- implanted samples were changed to metallic impurities-related deep levels with increase of annealing temperature. In the case of high temperature anneal, by showing the lower deep level concentration with increase of initial oxygen concentration, high initial oxygen concentration seems to be more effective compared with the lower initial oxygen one.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.197-201
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• 1997

The momentum, heat and mass trasfer phenomena in the silicon melt of the Czochralki crystal growth system are calculated using a three dimensional numerical simulation thechnique. Even though axisymmetrical boundary conditions are imposed to all calculations in a 3cm diameter crucible, several types of non-axisymmetric profiles of velocities, temperature and oxygen concentration appeared in the melt. Because of the non-axisymmetric profiles of velocities, temperature and oxygen concentration appeared in the melt. Because of the non-axisymmetric profiles and rotations of fluid induced by the crucible rotation, temperatures and oxygen concentrations in the silicon melt fluctuate. The rotating velocity of the profile is calculated from the phase shift of the data of temperature or oxygen at two different points which have same radius from center but 90 degree angular difference. From this calculation, it is found that the rotating veolocity of the oxygen and temperature is different from the crucible rotation rates. Therefore the frequencies of the oscillating temperature and oxygen concentrations are not same to the frequencies of the crucible rotations. Futhermore, the components of the frequencies of the temperature and oxygen concentration at the same point are not same. The fluctuation behaviors of the temperature or oxygen themselves are also different when the points are different. The calculation show that the temperature and the oxygen concentration near the interface also fluctuate. The results suggest that the striation pattern found in the grown silicon single crystals may ben generated by the oxygen concentration and the temperature oscillations of the melt occurred near the interface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.406-417
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• 1997

A numerical study was conducted on the optimum magnetic field intensity and asymmetric factor for uniform axial oxygen concentration in 8 inch silicon single crystal growing process by magnetic Czochralski method. For constant shape of cusp field, a change of coil and crucible position were compared. In case of symmetric cusp field, magnetic field intensity variation shows concave downward with crystal growing for uniform, axial oxygen concentration. A numerical results show similar value of standard deviation of average oxygen concentration for uniform oxygen concentration between coil and crucible position change. In case of asymmetric cusp field. asymmetric factor is increased with crystal growing to have uniform oxygen concentration.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.157-161
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• 1999

We investigated the effect of mechanical back side damage in Czochralski silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductance decay ($\mu$-PCD) technique, wet oxidation/preferential etching methods, near surface micro defect (NSMD) analysis, and X-ray section topography. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and NSMD density increased proportionally, also correlated to the oxidation induced stacking fault (OISF) density. Thus, NSMD technique can be used separately from conventional etching method in OISF measurement.