• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.39-43
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• 2012

This paper presents a study on the design of a pulling module for silicon ingot and an apparatus of manufacturing silicon single crystal ingot using the same method. The pulling module is conceptually designed by using TRIZ. Czochralski method(CZ) is representative way to manufacture single crystal ingot for wafers. The seed can be broken by high tension which is caused by large weight of a silicon ingot. The solution of this problem has been derived using 6SC(6 steps creativity)TRIZ. The pulling module is actuated by DC motor and rollers. High tension in the seed is removed by the rotate-elevate motion of rollers in the pulling module. A rubber belt is included in the rotate-elevate mechanism for increasing friction between rollers and silicon ingot.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.66-73
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• 1991

During the growth of macroscopically dislocation-free Czochralski silicon crystal, micro precipitates causing stacking faults in the silicon wafer during the oxidation are formed Thermal history the cryscausing acquire during the growth process is known to be a key factor determining the nucleation of this micro precipitates. In this article, various mechanisms suggested on the formation of microdefects in the silicon crystal are reviewed to secure the nucleation mechanism of the micro precipitates causing OSF whose pattern is normally ring or annular in CZ silicon crytal. B-defects which are known as vacancy clustering are considered to be the heterogeneous nucleation sites for the micro precipitates causing OSF in the CZ silicon crystals.

• Current Photovoltaic Research
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• v.6 no.2
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• pp.49-55
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• 2018

Recently solar cell industry needs the optimal design of Czochralski process for low cost high quality silicon mono crystalline ingot. Because market needs both high efficient solar cell and similar cost with multi-crystalline Si ingot. For cost reduction in Czochralski process, first of all energy reduction should be completed because Czochralski process is high energy consumption process. For this purpose we studied optimal water-cooling tube design and simultaneously we also check the quality of ingot with Von mises stress and V(pull speed of ingot)/G(temperature gradient to the crystallization) values. At this research we used $CG-Sim^{(R)}$ S/W package and finally we got improved water-cooling tube design than normally used process in present industry. The optimal water-cooling tube length should be 200mm. The result will be adopted at real industry.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.4 no.1
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• pp.121-131
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• 2000

Melt flow, heat and mass transfer of oxygen have been analyzed numerically in the process of Czochralski single crystal growth of silicon under the influence of misaligned cusp magnetic fields. Since the silicon melt in a crucible for crystal growth is of high temperature and of highly electrical-conducting, experimentation method has difficulty in analyzing the behavior of the melt flow. A set of simultaneous nonlinear equations including Navier-Stokes and Maxwell equations has been used for the modelling of the melt flow which can be regarded as a liquid metal. Together with the melt flow which forms the Marangoni convection, a flow circulation is observed near the comer close both to the crucible wall and the free surface. The melt flow tends to follow the magnetic lines instead of traversing the lines. These flow characteristics helps the flow circulation exist. Mass transfer characteristics influenced by the melt flow has been analyzed and the oxygen absorption rate to the crystal has been calculated and turned out to be rather uniform than in the case of an aligned magnetic field.

• Current Photovoltaic Research
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• v.8 no.1
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• pp.17-26
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• 2020

It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.781-785
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• 2001

The thermal behavior of Flow Pattern Defect (FPD) and Large Pit (LP) in Czochralski Silicon crystal was investigated by applying high temperature annealing ($\geq$$1100^{\circ}C$) and non-agitated Secco etching. For evaluation of the effect of LP upon device performance/yield, commercial DRAM and ASIC devices were fabricated. The results indicated that high temperature annealing generates LPs whereas it decreases FPD density drastically. However, the origins of FPD and LP seemed to be quite different by not showing any correspondence to their density and the location of LP generation and FPD extinction. By not showing any difference between the performance/yield of devices whose design rule is larger than 0.35 $\mu\textrm{m}$, LP seemed not to have detrimental effects on the performance/yield.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.495-501
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• 1991

This study is intended to make defect-free region, denuded zone at the silicon wafer surface for semiconductor device substrates. In this experiment, initial oxygen concentration of starting material CZ-grown silicon wafer, various heat treatment combinations, denuding ambient and the amounts of oxygen reduction were measured, and then denuded zone (DZ) formation and depth were investigated. In Low/High anneal (DZ formation could be achieved), the optimum temperature for Low anneal was 700$^{\circ}C$∼750$^{\circ}C$. In case of High anneal, with the time increased, DZ depth was increased at 1000$^{\circ}C$, 1150$^{\circ}C$ respectively, but on the contrary, DZ depth was decreased at low temperature 900$^{\circ}C$. As well, out-diffusion time below 2 hours was unsuitable for effective Gettering technique even though the temperature was high, and DZ formation could be achieved when initial oxygen concentration was only above 14 ppm in silicon wafer.

• Journal of the Korean Ceramic Society
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• v.29 no.4
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• pp.273-282
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• 1992

The effects of intrinsic and extrinsic gettering on the formation of microdefects in the wafer and on the electrical performance at near-surfaces of three different oxygen-bearing Czochralski silicon single crystal wafers were investigated by varying the combinations of the pre-heat treatments and the phosphorus diffusion through the back-surface of the wafers. The wafers which had less than 10.9 ppma of oxygen formed no gettering zones irrespective of any pre-heat treatments, while the wafers which had more than 14.1 ppma of oxygen and were treated by Low+High pre-heat treatments generated the gettering zone comprising oxygen precipitates, staking faults, and dislocation loops. The effects of extrinsic gettering by phosphorus diffusion were evident in all samples such that the minority carrier lifetimes were increased and junction leakage currents were decreased. However, the total gettering effects among the different pre-heat treatments did not necessarily correspond to the gettering structure revealed by synchrotron radiation section topograph.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.5
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• pp.1308-1318
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• 1995

The influence of varying rotation speed of both crystal and crucible was numerically investigated for the Czochralski silicon-crystal growth. Based on a simplified model assuming flatness of free surfrae, the Navier-Stokes Boussinesq equations were employed to identify the flow pattern, temperature distribution as well as the shape of the melt/crystal interface. The present results showed that the interface shape was relatively convex with respect to the melt at lower pulling rate and tended to be concave as the pulling rate increased. In particular, the experimentally observed gull-winged shape of the interface was qualitatively in agreement with the predicted shape. The rotation of crystal alone little affected the growth system. When the rotation speed of the crucible was increased, there occurred inversion of the interface shape from convex to concave pattern. At rapid rotation of the crucible, an interesting channel formation was predictied primarily due to the assumption of laminar flow.

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.207-211
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• 2000

In a Czochralski silicon single crystal, the relation between the growth twin and the crystal morphology was investigated. The growth twin is nucleated on the {111} facet planes near the growth ridges. When a {111} growth twin is formed in the <100> silicon crystal, the growth ridge where twin is nucleated will continuous through the twin plane. Other two ridges at the 90。 apart will be displaced about 33° and be deformed to facets. The ridge on the opposite side of twin nucleation will disappear by forming a slight hill. Because the growth ridges of silicon is due to the {111} planes, the variation in the growth ridge formation can be predicted clearly by considering the change of the {111} plane traces in the stereographic projection after twining.