• The Journal of Korean Society for Radiation Therapy
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• v.20 no.1
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• pp.31-36
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• 2008

Purpose: X ray irradiates material for dose distribution confirmation through material color variation to evaluate about possibility. Materials and Methods: That is rare earth material to pure KCl and KCl impurity Eu adding 0.5mol% by Czochralski method each single crystal grow and observed color variation of KCl X ray irradiation use of linear accelerator. Results: High energy X ray irradiation KCl:Eu show the blue fluorescence with purple color that pure KCl single crystal can confirm by show was not observed, but was colored violet. Conclusion: Colors variation of KCl founds stable color center from radiation and this color variation will be used usefully to X ray measurement material and phantom.

• Korean Journal of Materials Research
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• v.22 no.12
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• pp.711-716
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• 2012

Tungsten bronze structure $Sr_{1-x}Ba_xNb_2O_6$ (SBN) single crystals were grown primarily using the Czochralski method, in which several difficulties were encountered: striation formation and diameter control. Striation formation occurred mainly because of crystal rotation in an asymmetric thermal field and unsteady melt convection driven by thermal buoyancy forces. To optimize the growth conditions, bulk SBN crystals were grown in a furnace with resistance heating elements. The zone of $O_2$ atmosphere for crystal growth is 9.0 cm and the difference of temperature between the melt and the top is $70^{\circ}C$. According to the growth conditions of the rotation rate, grown SBN became either polycrystalline or composed of single crystals. In the case of as-grown $Sr_{1-x}Ba_xNb_2O_6$ (x = 0.4; 60SBN) single crystals, the color of the crystals was transparent yellowish and the growth axis was the c-axis. The facets of the crystals were of various shapes. The length and diameter of the single crystals was 50~70 mm and 5~10 mm, respectively. Tungsten bronze SBN growth is affected by the temperature profile and the atmosphere of the growing zone. The thermal expansion coefficients on heating and on cooling of the grown SBN single crystals were not matched. These coefficients were thought to influence the phase transition phenomena of SBN.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.795-800
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• 2002

Yb:$YCa_4O(BO_3)_3$ (Yb:YCOB) single crystal, in which the concentration of $Yb^{3+}$ ion 20 at%, was grown by the Czocharalski method using an iridium crucible under N2 atmosphere. The optimum growth parameters to get a high quality of single crystals were found to be 1.5∼2 mm/h of pulling rate and 10∼20 rpm of rotation rate. According to the results of spectroscopic properties, absorption edge of Yb:YCOB was 236 nm. Two strong absorption line due to $Yb^{3+}$ ions were observed at 900 and 975 nm. Thermal expansion coefficients of Yb:YCOB crystal along a, b and c crystallographic axes from 320 to 650 K were 12.1${\times}10^{-6}$/K, 5.9${\times}10^{-6}$/K, 12.9${\times}10^{-6}$/K, respectively. Specific heat was 0.162 $cal/g{\cdot}K$ at 330 K.

• Korean Journal of Crystallography
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• v.9 no.1
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• pp.30-38
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• 1998

A new frequency weighing sensor was applied to grow Bi12GeO20 crystals in the auto-di-ameter control system of Czochralski method. The rotation rate was varied in the range of 23 to 21 rpm to preserve flat interface in a given heat configuration. To prevent the constitutional super-cooling from the evaporation loss, 105% stoichiometric amount of Bi2O3 was employed, equivalent to 6.18 molar ratio of Bi2O3 to GeO2. Transparent and light brown Bi12GeO20 single crystal in uniform diameter was grown. The dislocation density was determined to be 103/cm2 corresponding to the optical quality in commercial applications. The grown crystal measured diameter 25 mm and length 70 mm and the preferred growth direction was confirmed to be <110>.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.193-204
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• 1998

The single crystal of the $LiTaO_3$has large electro-optic effects, so it is applied to optical switch, acousto-optic deflector, and optical memory device as hologram using photorefractive effect. In this study, optic-grade undoped $LiTaO_3$and Fe:LiTaO$LiTaO_3$single crystals were grown by the Czochralski method and optical transmission and absorption spectrums were measured in the wavelength of UV-VIS range. The curie temperature was determined with DSC and by measuring capacitance for the grown undoped crystal and ceramic powder samples of various Li/Ta ratio. In case of having a 48.6 mol% $Li_2O$ as a starting Li/Ta ratio, the results of concentration variations were below 0.01 mol% $Li_2O$ all over the crystal, so it was confirmed that $LiTaO_3$single crystals were grown under congruent melting composition having optical homogeneity. The curie temperature of the Fe:$LiTaO_3$crystal was increased with increased with increased doped Fe concentrations;by the ratio of $7.5^{\circ}C$ increase per Fe 0.1 wt%. Also, the optical transmittance was about 78 %, which was sufficient for optical device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.62-66
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• 2002

The conventional floating zone(FZ) crystal and Czochralski(CZ) silicon crystal have resistivity variations longitudinally as well as radially The resistivity variations of the conventional FZ and CZ crystal are not conformed to requirement of dopant distribution for power devices and thyristors. These resistivity variations in conventional cystals limits the reverse breakdown voltage that could be achieved and forced designers of high power diodes and thyristors to compromise the desired current-voltage characteristics. So to produce high Power diodes and thyristors, Neutron Transmutation Doping(NTD) technique is the one method just because NTD silicon provides very homogeneous distribution of doping concentration. This procedure involves the nuclear transmutation of silicon to phosphorus by bombardment of neutron to the crystal according to the reaction $^{30}$ Si(n,${\gamma}$)longrightarrow$^{31}$ Silongrightarrow(2.6 hr)$^{31}$ P+$\beta$$^{[-10]}$ . The radioactive isotope $^{31}$ Si is formed by $^{31}$ Si capturing a neutron, which then decays into the stable $^{31}$ P isotope (i.e., the donor atom), whose distribution is not dependent on the crystal growth parameters. In this research, neutron was irradiated on FZ silicon wafers which had high resistivity(1000~2000 Ω cm), for 26 and 8.3hours for samples of HTS-1 and HTS-2, and 13, 3.2, 2.0 hours for samples of IP-1, IP-2 and IP-3, respectively, to compare resistivity changes due to time differences. The designed resistivities were approached, which were 2.l Ωcm for HTS-1, 7.21 Ω cm for HTS-2, 1.792cm for IP-1, 6.83 Ωcm for IP-2, 9.23 Ωcm for IP-3, respectively. Point defects were investigated with Deep Level Transient Spectroscopy(DLTS). Four different defects were observed at 80K, 125K, 230K, and above 300K.

• Korean Journal of Crystallography
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• v.10 no.1
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• pp.71-75
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• 1999

융액인상법에 의하여 Nd3+ 이온이 15 at% 주입된 LaSc3(BO3)4 단결정을 성장하였다. 최적의 결정성장 조건하에서 성장된 결정은 결정형이 잘 발달되고 보라색 투명하였다. 편광 현미경에 의한 결정결함 분석결과 성장된 결정 중심부에서 0.1 mm 크기의 기포가 검출되었고, B2O3가 증발하여 결정에 증착된 shoulder 부위에서는 균열이 발생되었으나 body에서는 결함이 검출되지 않았다. X선 회절에 의하여 cell parameter를 측정한 결과 a=7.73 , b=9.85 , c=12.05 , β=105.48o 및 공간군 C2/c의 monoclinic 구조로 분석되었다. 양질의 단결정을 성장하기 위한 결정성장 요소는 회전속도 10 rmp, 인상속도 1.5 mm/h이었다. 성장된 결정은 808 nm에서 강하고 넓은 흡수대와 1050∼1080 nm에 걸친 형광 방출대가 관찰되었다. 성장된 결정을 이용하여 직경 3 mm, 두께 1mm 크기의 micro-chip laser 소자의 제조기술을 확립하였다.

• Korean Journal of Crystallography
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• v.6 no.1
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• pp.1-13
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• 1995

Cr:A12O3 and Ti:A12O3 single crystals were grown by Czochralski method, and the effects of crystal growth parameters such as pulling rate, rotation rate, dopant and growth atmosphere on crystal quality were investigated. And spectroscopic properties including lasing efficiency were also measured. Single crystals, sized of 20mm in diameter and 100-135mm in length, were successfully grown from the seed of <001> direction. With the doping level of 0.5w/o Cr2O3, pulling rate 2.0mm/hr, rotation rate of 30rpm and inert atmosphere by nitrogen gas, high quality crystals of Cr:A12O3 were grown. While in case of Ti:A12O3 crystals, high quality crystals were grown under the conditions of the doping level of 0.25w/o TiO2, pulling rate of 1.5mm/hr, rotation rate of 30rpm and reducing atmosphere by hydrogen - nitrogen mixed gas. It was confirmed that Cr3+ ion which maintains its ionoc valence during growth easily de-bubbled than Ti4+ ion which changes its valence, Fe3+ ion also has do-bubbling effect to Ti:A12O3 crystal and the reducing atmosphere by 90% N2 - 10% H2 mixed gas gave effective result on the changing of Ti4+ to Ti3+ and de-bubbling. As a result of spectroscopic measurements of Cr:A12O3 crystal, 4A2 →4F2 and 4F1 absorption transitions and E →4A2(R1) and 2A →4A2(R2) fluorenscence transitions were confirmed. And it was measured that wavelengths of laser R1 and R2 transitions were 696±5nm and 692±5nm respectively, line width of these transitions were 12A, and life-time of fluorenscence was 152μsec. In case of Ti:A12O3 crystals, it was confirmed that absortion transition of 4T2→4E and fluorescence transition of 4E→4T2 with wide range of 650-1050nm was occured. And 147μsec of life-time of fluorescence, 125.4 of figure of merit and 9% of laser efficience were also measured.

• Broadcasting and Media Magazine
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• v.6 no.1
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• pp.78-87
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• 2001

Seven kinds of most representative photorefractive crystals expected to contribute to the realization of the volume holographic storage were reviewed The growth conditions and problems for highly homogeneous optical qualities of the following crystals depending on the growth methods were discussed;(1) $LiNbO_3$ and $Bi_2SiO_{20}$ by Czochralski method (2) $Bi_{12}TiO_{20}$, $KNbO_3$ and $BaTiO_3$ by top seeded solution growth and (3) $(Sr_{1-x}Ba_{x})Nb_{2}O_{6}$ and $(K_{1-y}Na_y)_{2A-2}(Sr_{1-x}Ba_x)_{2-A}Nb_2O_6$ by Stepanov method, And then the figure of merits for the estimation of phororefractive materials on performances, such as $Q_1$, $Q_2$ and sensitivity, were discussed.

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.51-66
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• 1994

Y3Al5O2 and Nd: Y3Al5012 single crystals were grown by Czochralskl technique. The effectt of pulling rate rotation rate, and doping level of Nd3+ ion on the crystal quality were studied Various types of defects were analysed by photo-elastic effect and chemical etching method Finally, spectroscopic and laser poputies of grown crystal were measured. Optirmum pulling rate for good quality was dependant on the doping level of Nd3+ ion. It was found that the suitable pulling rates for pure Y3Al5O12 for 3.0∼3.5 a/o Nd3+ ion doped Y3Al5012 and for more than 40 a/o Nd3+ ion doped Y3Al5012 were 2∼4mm/hr, 0.6∼0.5mm/hr, and less than 0.4mm/hr respectively. Solid-liquid interface was convex at the rotation rate of 27∼60rpm, and concave at the rotation rate of 80∼100rpm. Growth axis was confired to <111> direction and lattice parameter was measured to 12.017A. Core (211) facets,striations, inclusions of metal particles, dislocations and optical inhonngeneities were detected. Four level laser transition of Nd3+ion in YIAls012 single crystal were identified by the spectroscopic measurements. Laser rod with tam diameter and 63mm length was fabricated from grown Nd3+ Y3Al5012 sin91e crystals. 1.8lJ of lasing threshould and 0.49% of soope efficiency were measured by the Pulsed laser action.