• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.3
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• pp.177-183
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• 2018

Currently, digital signal processing systems are used extensively in image processing, audio processing, filtering, and equalizations, etc. In addition, the importance of DRAM, which has a great influence on the performance of an digital signal processor has been increased, making research on DRAM actively conducted in industry and academia. Therefore, it is important to have a more accurate DRAM model in order to obtain reliable results when evaluating the performance of a digital signal processor through simulation. In this paper, we developed a digital signal processor simulator capable of inter-working with a DRAM simulator. With the simulator, we analyzed the influence of the DRAM model which operates correctly on a cycle-by-cycle basis, on the performance of the digital signal processor by using the UTDSP digital signal benchmark.

• Transactions of the Korean Society of Automotive Engineers
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• v.11 no.6
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• pp.14-20
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• 2003

The minimization of valve and seat insert wear is a critical factor in the pursuit of engine performance improvement. In order to achieve this goal, we have developed a new simulator, which can generate and control high temperatures up to $900^{\circ}C$ and various speeds up to 80Hz during motion, just like an actual engine. The wear simulator is considered to be a valid simulation of the engine valve and seat insert wear process with various speeds during engine activity. The objective of this work focuses on the different degrees of wear from two different test speeds (10Hz & 25Hz). For this study, the temperature of the outer surface of the seat insert was controlled at $350^{\circ}C$, the cycle number was 2.1$\times$106, and the test load was 1960N. The wear depth and surface roughness were measured before and after the testing using a confocal laser scanner. It was found that a higher speed (25Hz) causes more wear than a lower speed (10Hz) under identical test conditions (temperature, cycle number and test load). In the wear mechanism adhesive wear, shear strain and abrasive wear could be observed.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2003.10a
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• pp.43-46
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• 2003

This study was conducted via diagnostics in a transparent 120mm tank gun chamber simulator. Pressure rises at the breech and forward ends of the simulator chamber were measured by using PCB pressure gages. This technique has been used to develope of various advanced HEAT and KE rounds of 120mm tank gun. In the studies, many ignition phenomena occurring during the early phase of the ballistic cycle was observed and analyzed. It can provide insights into the functioning of the igniter, flame spreading, and formation of pressure waves in the gun chamber.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.694-697
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• 1997

As the life cycle of the vehicle become shorter, the method that reduce the development time of new model become more important. In this reason, the development of the simulator that provides similar environment with the actual vehicle load characteristics is increasing. In this paper, the link unit of the 3-axis road simulator is designed and simulated with dynamic analysis software ADMS. and the maximum stress and strain are analyzed for the safety of link and specifications of optimal design using finite element method.

• Restorative Dentistry and Endodontics
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• v.28 no.1
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• pp.34-40
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• 2003

Chewing simulator, which can partly mimic the motion of chewing motion of human, has been successfully developed. The purpose of its development was to make a new machine which can anticipate the clinical results of restoration in the human teeth more accurately in vitro condition It is composed of 4 major parts, chewing part, motor part, water bath, controlling part. The controlling part control the chewing force, frequency, the temperature and running time of water. Additionally, the actual chewing force and remaining time is shown in the monitor of controlling part. At present, the chewing cycle is composed depending on the pre-published data of foreign people. Long term clinical data should be additionally collected for the simulator to mimic the clinical results more accurately.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.708-712
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• 2004

Shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes. The dopant implantation was performed into the crystalline substrates using BF$_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth and sheet resistance. A new simulator is designed to model boron diffusion in silicon. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using initial conditions and boundary conditions, coupled diffusion equations are solved successfully. The simulator reproduced experimental data successfully.

• International Journal of Automotive Technology
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• v.6 no.5
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• pp.537-544
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• 2005

This paper presents the efficiency measurement and energy analysis for a parallel HEY. Using the HEV test rig, the efficiency of each powertrain component is measured for a given driving cycle including the regenerative braking system. Accompanied by the efficiency measurements, a detailed energy analysis is performed. Based on the efficiency measurement and energy analysis, a HEV performance simulator is developed. Using the simulator, the HEV performance is evaluated for a mild hybrid system. It is expected that the HEV simulator developed can be used to obtain further optimization potentials.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.5
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• pp.541-547
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• 2015

In this study, the performance of a low-floor midsize bus under development is predicted through simulations. To predict the vehicle's acceleration, maximum speed, and uphill driving performance, a forward simulator which calculates the vehicle power is developed. Also we verify the forward simulator by comparing simulations and test result for benchmarking vehicle. To predict the fuel consumption, we use a backward simulator for a specified road cycle. However, to predict the fuel consumption using the backward simulation the engine fuel-consumption map is needed. The engine fuel-consumption map extracting data from a similar sized diesel engine is used by re-scaling the maximum torque. As a result, we simulate the vehicle's forward performance with a new engine. Further, we simulated the backward performance to optimize the fuel efficiency and gearshift timing.

• Journal of the Korean Society of Safety
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• v.16 no.2
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• pp.57-62
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• 2001

In order to analyze the mechanism of semiconductor device damages by ESD, this paper adopts a new charged-device model(CDM), field-induced charged nudel(FCDM), simulator that is suitable for rapid routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. The high voltage applied to the device under test is raised by the fie]d of non-contacting electrodes in the FCDM simulator. which avoids premature device stressing and permits a faster test cycle. Discharge current md time are measured and calculated The FCDM simulator places the device at a huh voltage without transferring charge to it, by using a non-contacting electrode. The only charge transfer in the FCMD simulator happens during the discharge. This paper examine the field charging mechanism, measure device thresholds, and analyze failure modes. The FCDM simulator provides a Int and inexpensive test that faithfully represents factory ESD hazards. The damaged devices obtained in the simulator are analyzed and evaluated by SEM Also the results in this paper can be used for to prevent semiconductor devices from ESD hazards.

• Journal of the Korean Solar Energy Society
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• v.34 no.6
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• pp.11-18
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• 2014

Two-step water splitting thermochemical cycle with $CeO_2$ foam device was investigated by using a solar simulator composed of 2.5 kW Xe-Arc lamp and mirror reflector. The hydrogen production of $CeO_2$ foam device depending on reaction temperature of Thermal-Reduction step and Water-Decomposition step was analyzed, and the hydrogen production of $CeO_2$ and $NiFe_2O_4/ZrO_2$ foam devices was compared. As a result, the amount of reduced $CeO_2$ considerably varies according to the reaction temperature of Thermal-Reduction step. and hydrogen production was not much when the amount of reduced $CeO_2$ decreased even if the reaction temperature of Water-Decomposition step was high. Therefore, it is very important to keep the reaction temperature of Thermal-Reduction step high in two-step thermochemical cycle with $CeO_2$.