• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.679-682
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• 2005

Negative-differential conductance (NDC) characteristics as well as negative-differential trans-conductance (NDT) characteristics have been observed in the room temperature I-V characteristics of Field-induced Inter-band Tunneling Effect Transistors (FITETs). These characteristics have been explained with inter-band tunneling physics, from which, inter-band tunneling current flows when the energy bands of degenerately doped regions align, and it does not flow when they don't. FITET is an SOI device and the body region is not directly connected to the external terminal. Therefore, Fermi energy in the body region is determined by electrical coupling among four regions - gate, source, drain and substrate. So, a quasi Fermi energy of the majority carriers in the floating body region can be changed by external voltages, and this causes the energy band movements in the body region, which determine whether the energy bands between degenerately doped junctions aligns or not. This is a key point for an explanation of NDT and NDC characteristics. In this paper, a quasi Fermi energy movement in the floating body region of FITET was investigated by a device simulation. This result was applied for the description of relation between quasi Fermi energy in the body region and external gate bias voltage.

• 한국태양에너지학회 논문집
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• 제25권4호
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

• 한국태양에너지학회 논문집
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• 제38권1호
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• pp.25-36
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• 2018

The stoichiometric mixture of evaporating materials for the $CaAl_2Se_4$: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CaAl_2Se_4$, it was found orthorhomic structure whose lattice constant $a_0$, $b_0$ and $c_0$ were 6.4818, $11.1310{\AA}$ and $11.2443{\AA}$, respectively. To obtain the $CaAl_2Se_4$: Co single crystal thin film, $CaAl_2Se_4$: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were $600^{\circ}C$ and $440^{\circ}C$ respectively. The crystalline structure of $CaAl_2Se_4$: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CaAl_2Se_4$: Co obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.8239eV-(4.9823{\times}10^{-3}eV/K)T_2/(T+559K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $p-Si/p-CaAl_2Se_4$: Co heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.42 V, $25.3mA/cm^2$, 0.75 and 9.96%, respectively.

• 한국수정란이식학회지
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• 제19권2호
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• pp.101-112
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• 2004

본 연구는 포유류인 $Cl^-$통로의 존재 여부를 확인하기 위하여 수행되었다. $Cl^-$통로는 비흥분성 세포에서 용적변화와 pH 조절, 이온운반계 등에 중요한 역할을 수행하므로 활발한 세포분화가 이루어지는 난자의 생존과 기능에 필수적 $Cl^-$통로 존재 여부를 확인하고자 하였다. 단일통로 전류를 기록하는 patch clamp 기법을 이용하였다. 세포외(pipette) 용액을 140 mM NaCl로 하고 세포내(bath) 용액을 70 mM, 140 mM, 280 mM NaCl로 바꾸어 주었을 때, 역전압($E_{rev}$) 은 $Cl^-$평형전압을 반영하는 -9.8${\pm}$0.5mV, 0mV, 11.5${\pm}$0.2mV로 변화하였다(n=4). 이런 결과는 이론치와 약간의 편차를 보이고 있으므로 이를 보정하기 위항 Goldman-Hodgkin-Katz(GHK) 식을 이용한 결과 $Cl^-$에 대한 $Na^+$의 투과성 ($P_{Na}$/$P_{Cl}$/)은 0.25로 추측할 수 있었다. Inside out patch mode에서 Pipette 용액과 bath 용액에 imperment인 NMDG-Cl로 구성하였을 경우 단일 통로가 기록되었다.(n=22). 막전압이 증가함에 따라 전도도(conductance)가 같이 증가하였으며 전류-전압 관계는 outward rectification을 보였다. 이런 특성을 나타내는 단일통로로 전류는 선택적 $Cl^-$통로 차단제인 IAA-94(indanyloxyacetic acid 94)에 의해 농도 의존적으로 차단되었으며 가역적으로 회복되었다. IAA의 $IC_{50}$은 32.6$\mu\textrm{M}$이었다. DIDS(4,4'-diisothiocyan ostillben-2-2'disulfonic acid)에 의해서는 전류크기가 감소 되는 빠른 억제기전을 나타내는 차단효과를 보였으며 시간경과에 따라 seblevel로 감소되는 subconductance block 이 나타났다. 이상의 결과는 햄스터 난자에서 chloride 통로가 존재하여, 물질이동과 pH 조절기능을 나타내는 외향성 전류-전압관계를 보이는 $Cl^-$ 통로의 성상으로 미루어 볼 때 난자의 pH 조절과 용적조절과 같은 생리적 환경 조성에 관여할 것으로 추정된다.