• 제목/요약/키워드: Current-voltage characteristics

검색결과 3,699건 처리시간 0.039초

Current-Voltage-Luminance Characteristics Depending on a Direction of Applied Voltage in Organic Light-Emitting Diodes

  • Kim, Sang-Keol;Hong, Jin-Woong;Kim, Tae-Wan
    • Transactions on Electrical and Electronic Materials
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    • 제3권1호
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    • pp.38-41
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    • 2002
  • We have investigated current-voltage-luminance characteristics of organic light-emitting diodes based on TPD/Alq$_3$organics depending on the application of forward-backward bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the current-voltage characteristics were measured. We have observed that the current-voltage characteristics shows a reversible current maxima at low voltage, which is possibly not related to the emission from Alq$_3$. Current-voltage-luminance characteristics imply that the conduction luminance mechanism at low voltage is different from that of high voltage one.

교류 음 전압에 따른 형광 OLED의 전계 발광 특성 (Electroluminescent Characteristics of Fluorescent OLED with Alternating Current Negative Voltage)

  • 서정현;양재웅;백경갑;주성후
    • 한국표면공학회지
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    • 제52권2호
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    • pp.72-77
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    • 2019
  • To study the characteristics of AC driven OLED, we fabricated the fluorescent OLEDs and analyzed the electroluminescence characteristics of OLEDs with AC negative voltage. The luminance and the current density of the OLED decreased, and the number and size of the dark spots increased in proportion to the duration time and level of the applied AC negative voltage. The current efficiency of the OLED was improved when high AC negative voltage was applied within a short time. When the AC negative voltage of 10 V was applied for 1 minute, the efficiency was improved by 12.4%. Also, the degradation of luminance and current efficiency due to the duration of light emission was improved in the case of OLED applied for 1 minute with 10 V AC negative voltage. These are expected as a result of the improvement of the leakage current characteristics by eliminating the short-circuit region formed by the defect of the OLED at the AC negative high voltage. As a result, the continuous application of AC negative voltage reduced the luminance and the current density of OLED, but the temporary application of AC negative voltage with the proper time and voltage could improve the efficiency and lifetime of OLED.

고온 동작 MESFET 의 온도특성 해석 (High Temperature Characteristics of submicron GaAs MESFETs)

  • 원창섭;유영한;신훈범;한득영;안형근
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.379-382
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    • 2002
  • GaAs has wide band gap, Therefore that malarial can used high Temperature application. in this paper explain to current-voltage characteristics of thermal effect. we experiment on thermal test of current-voltage characteristics and gate leakage current with real device. As a result, we propose a current-volatage characteristics model. that model base on gate leakage current, and gate leakage current influence gate source voltage.

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PZT계 압전변압기의 공진특성과 전기적 성질 (Resonance characteristics and electrical properties of PZT-piezoelectric transformer)

  • 박순태;정수태;이종헌
    • E2M - 전기 전자와 첨단 소재
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    • 제8권1호
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    • pp.27-34
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    • 1995
  • The analysis of nonlinear equivalent circuit and the resonance characteristics of input current and output voltage were simulated, and their electrical properties are discussed in the transverse-type piezoelectric ceramic transformer. The nonlinear resonance characteristics of input current and output voltage showed by the thermal effect due to a higher driving current, the nonlinearity increased greatly as driving current increased. When load resistor was 100[M.ohm.], the nonlinear coefficient was -1.3. The nonlinear resonance curve of input current and output voltage for a variation of input voltage and load resistor agreed with the discussed theory. The output voltage increased nearly proportioned to input voltage when load resistors were below 50[M.ohm.], the voltage step-up ratio decreased when a load resistor was 100[M.ohm.] and their maximum value was 950.

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Dual Gate Emitter Switched Thyristor의 Latch-up 전류 특성 (Characteristics of Latch-up Current of the Dual Gate Emitter Switched Thyristor)

  • 이응래;오정근;이형규;주병권;김남수
    • 한국전기전자재료학회논문지
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    • 제17권8호
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    • pp.799-805
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    • 2004
  • Two dimensional MEDICI simulator is used to study the characteristics of latch-up current of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics, latch-up current density, ON-voltage drop and electrical property with the variations of p-base impurity concentrations. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have the better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer p-base structure under the floating $N^+$ emitter indicates to have the better characteristics of latch-up current and breakover voltage.

유기 전기발광 소자에서 인가전압 방향에 따른 전류-전압 특성 (Current-Voltage Characteristics with a direction of Voltage in Organic Light-Emitting Diodes)

  • 김상걸;정동회;정택균;이호식;김태완;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.130-132
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    • 2001
  • We have investigated current-voltage (I-V) characteristics of organic light-emitting diodes based on $TPD/Alq_3$ organics depending on the application of forward-reverse bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the I-V characteristics were measured. We have observed that the I-V characteristics shows a current mxima at low voltage, which is possibly not related to the emission from $Alq_3$.

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동작 온도에 따른 Double Gate MOSFET의 전류-전압특성 (Temperature-dependent characteristics of Current-Voltage for Double Gate MOSFET)

  • 김영동;고석웅;정학기
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2003년도 춘계종합학술대회
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    • pp.693-695
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    • 2003
  • 본 논문에서는 main gate와 side gate를 갖는 double gate MOSFET의 동작 온도에 따른 전류-전압 특성을 조사하였다. main gate와 side gate 길이는 각각 50nm, 70nm로 하였으며, main gate와 side gate 전압이 각각 1.5V, 3.0V일 때 온도 변화에 따른 전류-전압 특성을 조사하였다. 실온에서보다 77K일 때가 전류-전압 특성이 우수하였으며, 이때 소자의 특성 분석을 위해 ISE-TCAD를 사용하여 시뮬레이션 하였다.

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유기 전기발광 소자에서 인가전압 방향에 따른 전류-전압 특성 (Current-Voltage Characteristics with a direction of Voyage in Organic Light-Emitting Diodes)

  • 김상걸;정동회;정택균;이호식;김태완;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.130-132
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    • 2001
  • We have investigated current-voltage(I-V) characteristics of organic light-emitting diodes based on TPD/Alq$_3$ organics depending on the application of forward-reverse bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the I-V characteristics were measured. We have observed that the I-V characteristics shows a current mxima at low voltage, which is possibly not related to the emission from Alq$_3$.

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해석학적 전류-전압모델을 이용한 이중게이트 MOSFET의 전송특성분석 (Analysis of Transport Characteristics for Double Gate MOSFET using Analytical Current-Voltage Model)

  • 정학기
    • 한국정보통신학회논문지
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    • 제10권9호
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    • pp.1648-1653
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    • 2006
  • 이 연구에서는 해석학적 전류-전압 모델을 이용하여 DGMOSFET(Double Gate MOSFET)의 전송특성을 분석하였다. MOSFET의 게이트길이가 100nm이하로 작아지면 산화막두께가 1.5m이하로 작아져야만하고 채널의 도핑이 매우 증가하기 때문에 소자의 문턱전압변화, 누설전류의 증가 등 다양한 문제가 발생하게 된다 이러한 문제를 조사하기 위하여 해석학적 전류-전압 모델을 이용하여 소자의 크기를 변화시키면서 전류-전압특성을 조사하였다 소자의 크기를 변화시키면서 해석학적 전류-전압 모델의 타당성을 조사하였으며 온도 변화에 대한 특성도 비교 분석하였다. 게이트 전압이 2V에서 77K의 전류-전압 특성이 실온에서 보다 우수하다는 것을 알 수 있었다.

교류구동방식에 의한 형광 OLED의 주파수 응답 특성 (Frequency Response Characteristics of Fluorescent OLED with Alternating Current Driving Method)

  • 서정현;주성후
    • 한국전기전자재료학회논문지
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    • 제32권1호
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    • pp.40-46
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    • 2019
  • To study the frequency response characteristics of alternating-current-driven organic light-emitting diodes (OLEDs), we fabricated blue-fluorescent OLEDs and analyzed their electroluminescent characteristics according to the alternating current voltage and frequency. The luminance-frequency characteristics of alternating-current-driven OLED was similar to that of a low-pass filter, and the luminance of high-voltage OLED decreased at higher frequency than low-voltage OLED. The luminance characteristics of the OLED according to the frequency is due to the capacitive reactance in the OLED, generated during the alternating current driving. The frequency response characteristics of the OLED according to the voltage is due to the decrease in internal resistance of the organic layer. In addition, the negative voltage component of the alternating current did not affect the frequency response of the OLED. Therefore, the electroluminescent characteristics of OLED with an alternating current power of 60 Hz are not influenced by the frequency.