• Title/Summary/Keyword: Current-pulse driver

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Current Sensing Circuit of MOSFET Switch for Boost Converter (부스터 변환기를 위한 MOSFET 스위치 전류 감지 회로)

  • Min, Jun-Sik;No, Bo-Mi;Kim, Eui-Jin;Lee, Chan-Soo;Kim, Yeong-Seuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.9
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    • pp.667-670
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    • 2010
  • In this paper, a high voltage current sensing circuit for boost converter is designed and verified by Cadence SPECTRE simulations. The current mirror pair, power and sensing metal-oxide semiconductor field effect transistors (MOSFETs) with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side lateral-diffused MOS transistor (LDMOST) switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35 ${\mu}m$ BCD process show that current sensing is accurate and the pulse frequency modulation (PFM) boost converter using the proposed current sensing circuit satisfies with the specifications.

A Multi-Channel Gigabit CMOS Optical Transmitter Circuit (멀티채널 기가비트 CMOS 광 송신기 회로)

  • Tak, Ji-Young;Kim, Hye-Won;Shin, Ji-Hye;Lee, Jin-Ju;Park, Sung-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.12
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    • pp.52-57
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    • 2011
  • This paper presents a 4-channel optical transmitter circuit realized in a $0.18{\mu}m$ CMOS technology for high-speed digital interface. Particularly, the VCSEL driver exploits the feed-forward technique, and the pre-amplifier employs the pulse-width control. Thus, the optical transmitter operates at the bias current up to 4mA and the modulation current from $2{\sim}8mA_{pp}$. with the pulse-width distortion compensated effectively. The 4-channel optical transmitter array chip occupies the area of $1.0{\times}1.7mm^2$ and dissipates 35mW per channel at maximum current operations from a single 1.8V supply.

Design and Implementation of Transformerless 40W LED Light Driver Circuit for Ships (선박용 변압기 없는 40W LED 조명 구동회로의 설계 및 구현)

  • Song, Jong-Kwan;Park, Jang-Sik;Yoon, Byung-Woo
    • The Journal of the Korea institute of electronic communication sciences
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    • v.7 no.3
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    • pp.485-490
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    • 2012
  • In this paper, driver circuit of LED lights for ships is designed and implemented to replace conventional lights with filament which have short life time due to vibration of ships. The driver of LED module is switching circuit without transformer to reduce volume and cost. As switch circuit controls input 220 VAC with PWM, LED module is reliably driven. Power factor is improved by using valley-fill PFC compensation circuit which is handled to pulse current of switching circuit. Serial-parallel LED circuit is applied to reduce change period of lights of long-term navigation ships. Array of serial-parallel can operate even if some of LEDs is damaged. It is suitable for ships that power consumption and power factor of lights including developed drive circuit have 39Watt and 0.925 respectively.

Design of Digital-clothing that can Detect Driver's Bio-signal and Position (운전자의 생체신호 및 위치 파악이 가능한 디지털 의류 설계)

  • Lee, Min-hye;Jeong, Dong-myong;Shin, Seong-yoon;Jeon, Tae-il;Choi, Jae-seok;Jeong, Gi-soo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2018.10a
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    • pp.171-173
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    • 2018
  • The poor working conditions of transit drivers not only lead to mental stress and fatigue accumulation of workers, but also to the main causes of mass transit accidents. Stress and fatigue accumulation are closely related to the vital signs because they affect the psychological and physical health. In this paper, we designed a digital garment which can measure driver's health condition by measuring electrocardiogram, pulse rate and body temperature. Also proposed a system that transmits the measured bio-signal to the smartphone app via Bluetooth and transmits the current position of the driver to the server by using the built-in GPS of the smartphone, assuming there is something wrong.

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Dickson Charge Pump with Gate Drive Enhancement and Area Saving

  • Lin, Hesheng;Chan, Wing Chun;Lee, Wai Kwong;Chen, Zhirong;Zhang, Min
    • Journal of Power Electronics
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    • v.16 no.3
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    • pp.1209-1217
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    • 2016
  • This paper presents a novel charge pump scheme that combines the advantages of Fibonacci and Dickson charge pumps to obtain 30 V voltage for display driver integrated circuit application. This design only requires four external capacitors, which is suitable for a small-package application, such as smart card displays. High-amplitude (<6.6 V) clocks are produced to enhance the gate drive of a Dickson charge pump and improve the system's current drivability by using a voltage-doubler charge pump with a pulse skip regulator. This regulation engages many middle-voltage devices, and approximately 30% of chip size is saved. Further optimization of flying capacitors tends to decrease the total chip size by 2.1%. A precise and simple model for a one-stage Fibonacci charge pump with current load is also proposed for further efficiency optimization. In a practical design, its voltage error is within 0.12% for 1 mA of current load, and it maintains a 2.83% error even for 10 mA of current load. This charge pump is fabricated through a 0.11 μm 1.5 V/6 V/32 V process, and two regulators, namely, a pulse skip one and a linear one, are operated to maintain the output of the charge pump at 30 V. The performances of the two regulators in terms of ripple, efficiency, line regulation, and load regulation are investigated.

Development of RF Ion Source for Neutral Beam Injector in Fusion Devices

  • Jang, Du-Hui;Park, Min;Kim, Seon-Ho;Jeong, Seung-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.550-551
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    • 2013
  • Large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER plasmas. Negative hydrogen (deuterium) ion sources are major components of neutral beam injection systems in future large-scale fusion experiments such as ITER and DEMO. RF ion sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck- Institute for Plasma Physics, Garching) for ASDEX-U and W7-AS neutral beam injection (NBI) systems. In recent, the first NBI system (NBI-1) has been developed successfully for the KSTAR. The first and second long-pulse ion sources (LPIS-1 and LPIS-2) of NBI-1 system consist of a magnetic bucket plasma generator with multi-pole cusp fields, filament heating structure, and a set of tetrode accelerators with circular apertures. There is a development plan of large-area RF ion source at KAERI to extract the positive ions, which can be used for the second NBI (NBI-2) system of KSTAR, and to extract the negative ions for future fusion devices such as ITER and K-DEMO. The large-area RF ion source consists of a driver region, including a helical antenna (6-turn copper tube with an outer diameter of 6 mm) and a discharge chamber (ceramic and/or quartz tubes with an inner diameter of 200 mm, a height of 150 mm, and a thickness of 8 mm), and an expansion region (magnetic bucket of prototype LPIS in the KAERI). RF power can be transferred up to 10 kW with a fixed frequency of 2 MHz through a matching circuit (auto- and manual-matching apparatus). Argon gas is commonly injected to the initial ignition of RF plasma discharge, and then hydrogen gas instead of argon gas is finally injected for the RF plasma sustainment. The uniformities of plasma density and electron temperature at the lowest area of expansion region (a distance of 300 mm from the driver region) are measured by using two electrostatic probes in the directions of short- and long-dimension of expansion region.

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Design of SCR-Based ESD Protection Circuit for 3.3 V I/O and 20 V Power Clamp

  • Jung, Jin Woo;Koo, Yong Seo
    • ETRI Journal
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    • v.37 no.1
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    • pp.97-106
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    • 2015
  • In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

Intergrated circuit design of power-stabilizing circuitry for optical transmitter (광송신기용 광파워 안정화 회로의 집적회로 설계)

  • 이성철;박기현;정행근
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.33B no.3
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    • pp.47-55
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    • 1996
  • An optical transmitter, which is a key component of the optical transmission system, converts the electrical signal to optical signal and consists of a high-speed current-pulse driver for laser diode and low-speed feedback loops that stabilize optical power against aging, power supply voltage fluctuations, and ambient temperature changes. In this paper, the power-stabilizing part, which forms the bulk of the optical transmitter circuitry was designed in integrted circuits. Operational amplifiers and reference voltage generation circuits, which were identified as key building blocks for the power-stabilizing feedback loops, were designed and were subsequently verified through HSPICE simulations. The designed operational amplifier consists of a two-stage folded cascode amplifier and class AB output stage, whereas the reference voltage is obtained by bandgap reference circuits. Finally the power-stabilizing circuitry was laid out based on 3\mu$m CMOS design rules for fabrication.

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SRM Driver Using Simple Position Sensor (간단한 위치센서를 이용한 SRM 드라이버)

  • An, Y.J.;Joe, C.J.;Ahn, J.W.;Hwang, Y.M.
    • Proceedings of the KIEE Conference
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    • 1994.07a
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    • pp.363-365
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    • 1994
  • In switched reluctance motors(SRM), shaft position sensing is essential in order to synchronize the excitation pulse of a pertinent phase to the rotor position. This paper describes the operation of SRM drive using a simple position sensor of low cost. The position sensor is composed of a slotted disk similar to the rotor core shape of a prototype 6/4 SRM and three opto-interrupters disposed at an angle of 30 degrees. The phase current waveforms measured at several rotor speeds in experiment arc compared with those obtained through the computer simulation.

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Torque Ripple Reduction Driver of Single Pulse SRM for High Power Factor (고역율형 단상 SRM의 토크리플 저감을 위한 구동회로 설계)

  • Kim Bong-Chul;Lee Dong-Hee;Ahn Jin-Woo
    • Proceedings of the KIPE Conference
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    • 2004.07a
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    • pp.308-311
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    • 2004
  • A novel single-stage power factor corrected (PFC) drive for switched reluctance motor (SRM) is presented to achieve sinusoidal, near unity power factor input current. The proposed PFC SRM drive has no additional active switch. And a single-stage approach, which combines a DC link capacitor used as do source and a drive used for driving the motor into one power stage, has a simple structure and low cost. The characteristics and validity of the proposed circuit will be discussed in depth through the experimental results.

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