• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.1241-1246
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• 2005

This paper described an 8bit, 100Msample/s CMOS D/A converter using a glich-time minimization technique for the high-speed sampling rate of 100MHz level. The proposed DAC was implemented in 0,35um Hynix CMOS technology and adopts a current mode architecture to optimize sampling rate, resolution, chip area. The DAC linear characteristics was similar to the proposed specification the prototype error between DNL and INL is less than ${\pm}0.09LSB$ respectively. Also, fab-out chip was tested, analysed the cause of error operation, and proposed the field considerations for chip test.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.408-415
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• 2007

A switched-gain controlled LNA is designed and implemented in 0.18 um CMOS technology for $3.1{\sim}4.8\;GHz$ UWB system. In high gain mode, measurement shows a power gain of 12.5 dB, an input IP3 of 0 dBm, while consuming only 8.13 mA of current. In low gain mode, measurement shows a power gain of -8.7 dB, an input IP3 of 9.1 dBm, while consuming only 0 mA of current.

• 전자공학회논문지 IE
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• v.43 no.3
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• pp.6-12
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• 2006

This paper described an 8bit, 100Msample/s CMOS D/A converter using a glitch-time minimization technique for the high-speed sampling rate of 100MHz level. The proposed DAC was implemented in $0.35{\mu}m$ Hynix CMOS technology and adopts a current mode architecture to optimize sampling rate, resolution, chip area. The DAC linear characteristics was similar to the proposed specification and the prototype error between DNL and INL is less than $\pm$0.09LSB respectively. Also, the manufactured DAC chip was analyzed the cause of error operation and proposed the field considerations for chip test.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.12
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• pp.1730-1736
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• 2015

This paper presents a 16-channel transimpedance amplifier (TIA) array implemented in a standard $0.18-{\mu}m$ CMOS technology for the applications of panoramic scan LADAR (PSL) systems. Since this array is the front-end circuits of the PSL systems to recover three dimensional image for unmanned vehicles, low-noise and high-gain characteristics are necessary. Thus, we propose a voltage-mode inverter TIA (I-TIA) array in this paper, of which measured results demonstrate that each channel of the array achieves $82-dB{\Omega}$ transimpedance gain, 565-MHz bandwidth for 0.5-pF photodiode capacitance, 6.7-pA/sqrt(Hz) noise current spectral density, and 33.8-mW power dissipation from a single 1.8-V supply. The measured eye-diagrams of the array confirm wide and clear eye-openings up to 1.3-Gb/s operations. Also, the optical pulse measurements estimate that the proposed 16-channel TIA array chip can detect signals within 20 meters away from the laser source. The whole chip occupies the area of $5.0{\times}1.1mm^2$ including I/O pads. For comparison, a current-mode 16-channel TIA array is also realized in the same $0.18-{\mu}m$ CMOS technology, which exploits regulated-cascode (RGC) input configuration. Measurements reveal that the I-TIA array achieves superior performance in optical pulse measurements.

• Journal of IKEEE
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• v.11 no.2
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• pp.83-88
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• 2007

This paper proposes an 8${\times}$8 bit parallel multiplier using MOS current-mode logic (MCML) circuit for low power consumption. The 8${\times}$8 multiplier is designed with proposed MCML full adders and conventional full adders. The designed multiplier is achieved to reduce the power consumption by 9.4% and the power-delay-product by 11.7% compared with the conventional circuit. This circuit is designed with Samsung 0.35${\mu}m$ standard CMOS process. The validity and effectiveness are verified through the HSPICE simulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.54-58
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• 2007

Development of high performance LTPS TFTs contributed to open up new SOP technology with various digital circuits integrated in display panels. This work introduces the current mode logic(CML) gate design method with which one can replace slow CMOS logic gates. The CML inverter exhibited small logic swing, fast response with high power consumption. But the power consumption became compatible with CMOS gates at higher clock speed. Due to small current values in CML, layout area is smaller than the CMOS counterpart even though CML uses larger number of devices. CML exhibited higher noise immunity thanks to its non-inverting and inverting outputs. Multi-input NAND/AND and NOR/OR gates were implemented by the same circuit architecture with different input confirugation. Same holds for MUX and XNOR/XOR CML gates. We concluded that the CML gates can be designed with few simple circuits and they can improve power consumption, chip area, and speed of operation.

• Journal of IKEEE
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• v.21 no.4
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• pp.375-380
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• 2017

A differential current-to-time interval converter is presented for current mode sensors. It consists of a ramp voltage generator, a current mode sensor, a reference current source, two current-tunable Schmitt triggers, a one-shot multivibrator, and two logic gates. The design principle is to apply a ramp voltage to each input of the two current-tunable Schmitt triggers whose threshold voltages are proportional to the drain current values of the current mode sensors. A proposed circuit converts a current change in the ISFET biosensor into its equivalent pulse width change. A prototype circuit built using TSMC 0.18 nm CMOS process exhibit a conversion sensitivity amounting to $726.9{\mu}s/pH$ over pH variation range of 2-12 and a linearity error less than ${\pm}0.05%$.

• Journal of IKEEE
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• v.13 no.2
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• pp.208-215
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• 2009

The high efficiency power management IC(PMIC) with DT-CMOS(Dynamic Threshold voltage MOSFET) switching device for portable application is proposed in this paper. Because portable applications need high output voltages and low output voltage, Boost converter and Buck converter are embedded in One-chip. PMIC is controlled with PWM control method in order to have high power efficiency at high current level. DTMOS with low on-resistance is designed to decrease conduction loss. Boost converter and Buck converter, are based on Voltage-mode PWM control circuits and low on-resistance switching device, achieved the high efficiency near 92.1% and 95%, respectively, at 100mA output current. And Step-down DC-DC converter in stand-by mode below 1mA is designed with LDO in order to achive high efficiency.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.528-533
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• 2016

A low voltage high PSRR CMOS Bandgap circuit capable of generating a stable voltage of less than 1 V (0.8 V and 0.5 V) robust to Process, Voltage and Temperature (PVT) variations is proposed. The high PSRR of the circuit is guaranteed by a low-voltage current mode regulator at the central aspect of the bandgap circuitry, which isolates the bandgap voltage from power supply variations and noise. The isolating current mirrors create an internal regulated voltage $V_{reg}$ for the BG core and Op-Amp rather than the VDD. These current mirrors reduce the impact of supply voltage variations. The proposed circuit is implemented in a $0.35{\mu}m$ CMOS technology. The BGR circuit occupies $0.024mm^2$ of the die area and consumes $200{\mu}W$ from a 5 V supply voltage at room temperature. Experimental results demonstrate that the PSRR of the voltage reference achieved -118 dB at frequencies up to 1 kHz and -55 dB at 1 MHz without additional circuits for the curvature compensation. A temperature coefficient of $60 ppm/^{\circ}C$ is obtained in the range of -40 to $120^{\circ}C$.

• The KIPS Transactions:PartA
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• v.17A no.3
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• pp.121-126
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• 2010

This paper proposes a low-power MOS current-mode logic circuit with the low voltage swing technology and the high-threshold sleep-transistor. The sleep-transistor is used to high-threshold voltage PMOS transistor to minimize the leakage current. The $16{\times}16$ bit parallel multiplier is designed by the proposed circuit structure. Comparing with the conventional MOS current-model logic circuit, the circuit achieves the reduction of the power consumption in sleep mode by 1/104. The proposed circuit is achieved to reduce the power consumption by 11.7% and the power-delay-product by 15.1% compared with the conventional MOS current-model logic circuit in the normal mode. This circuit is designed with Samsung $0.18\;{\mu}m$ standard CMOS process. The validity and effectiveness are verified through the HSPICE simulation.