• Title/Summary/Keyword: Current sensors

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Vibration analysis of spherical sandwich panels with MR fluids core and magneto-electro-elastic face sheets resting on orthotropic viscoelastic foundation

  • Kargar, Javad;Arani, Ali Ghorbanpour;Arshid, Ehsan;Rahaghi, Mohsen Irani
    • Structural Engineering and Mechanics
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    • v.78 no.5
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    • pp.557-572
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    • 2021
  • The current study considers free vibration of the spherical panel with magnetorheological (MR) fluids core and magneto-electro-elastic face sheets. The panel is subjected to electro-magnetic loads and also is located on an orthotropic visco-Pasternak elastic foundation. To describe the displacement components of the structure, the first-order shear deformation theory (FSDT) is used and the motion equations are extracted by employing Hamilton's principle. To solve the motion differential equations, Navier's method is selected as an exact analytical solution for simply supported boundary conditions. Effect of the most important parameters such as magnetic field intensity, loss factor, multi-physical loads, types of an elastic medium, geometrical properties of the panel, and also different material types for the face sheets on the results is considered and discussed in details. The outcomes of the present work may be used to design more efficient smart structures such as sensors and actuators.

Recent Developments in High Resolution Delta-Sigma Converters

  • Kim, Jaedo;Roh, Jeongjin
    • Journal of Semiconductor Engineering
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    • v.2 no.1
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    • pp.109-118
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    • 2021
  • This review paper describes the overall operating principle of a discrete-time delta-sigma modulator (DTDSM) and a continuous-time delta-sigma modulator (CTDSM) using a switched-capacitor (SC). In addition, research that has solved the problems related to each delta-sigma modulator (DSM) is introduced, and the latest developments are explained. This paper describes the chopper-stabilization technique that mitigates flicker noise, which is crucial for the DSM. In the case of DTDSM, this paper addresses the problems that arise when using SC circuits and explains the importance of the operational transconductance amplifier performance of the first integrator of the DSM. In the case of CTDSM, research that has reduced power consumption, and addresses the problems of clock jitter and excess loop delay is described. The recent developments of the analog front end, which have become important due to the increasing use of wireless sensors, is also described. In addition, this paper presents the advantages and disadvantages of the three-opamp instrumentation amplifier (IA), current feedback IA (CFIA), resistive feedback IA, and capacitively coupled IA (CCIA) methods for implementing instrumentation amplifiers in AFEs.

Printing of Polymer Dielectric via Optimal Blade Coating for Large-scale Low-Leakage Capacitors (대면적 저누설 커패시터를 위한 최적화 블레이드 코팅 기반 고분자 유전체 프린팅)

  • Seo, Kyeong-Ho;Bae, Jin-Hyuk
    • Journal of Sensor Science and Technology
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    • v.30 no.1
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    • pp.51-55
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    • 2021
  • We demonstrated a polymer dielectric with low leakage characteristics through an optimal blade coating method for low-cost and large-scale fabrication of metal-insulator-metal (MIM) capacitors. Cross-linked poly(4-vinylphenol) (C-PVP), which is a typically used polymer dielectric, was coated on a 10 × 10 cm indium-tin-oxide (ITO) deposited glass substrate by changing the deposition temperature (TD) and coating velocity (VC) in the blade coating. During the blade coating, the thickness of the thin c-PVP varied depending on TD and VC owing to the 'Landau-Levich (LL) regime'. The c-PVP-dielectric-based MIM capacitor fabricated in this study showed the lowest leakage current characteristics (10-6 A/㎠ at 1.2 MV/㎠, annealing at 200 ℃) and uniform electrical characteristics when TD was 30 ℃ and VC was 5 mm/s. In addition, at TD = 30 ℃, stable leakage characteristics were confirmed when a different electric field was applied. These results are expected to positively contribute to applications with next-generation electronic devices.

Analytical solution for analyzing initial curvature effect on vibrational behavior of PM beams integrated with FGP layers based on trigonometric theories

  • Mousavi, S. Behnam;Amir, Saeed;Jafari, Akbar;Arshid, Ehsan
    • Advances in nano research
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    • v.10 no.3
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    • pp.235-251
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    • 2021
  • In the current study, the free vibrational behavior of a Porous Micro (PM) beam which is integrated with Functionally Graded Piezoelectric (FGP) layers with initial curvature is considered based on the two trigonometric shear deformation theories namely SSDBT and Tan-SDBT. The structure's mechanical properties are varied through its thicknesses following the given functions. The curved microbeam is exposed to electro-mechanical preload and also is rested on a Pasternak type of elastic foundation. Hamilton's principle is used to extract the motion equations and the MCST is used to capture the size effect. Navier's solution method is selected as an analytical method to solve the motion equations for a simply supported ends case and by validating the results for a simpler state with previously published works, effects of different important parameters on the behavior of the structure are considered. It is found that although increasing the porosity reduces the natural frequency, but enhancing the volume fraction of CNTs increasing it. Also, by increasing the central angle of the curved beam the vibrations of the structure increases. Designing and manufacturing more efficient smart structures such as sensors and actuators are of the aims of this study.

Development of a Korean chatbot system that enables emotional communication with users in real time (사용자와 실시간으로 감성적 소통이 가능한 한국어 챗봇 시스템 개발)

  • Baek, Sungdae;Lee, Minho
    • Journal of Sensor Science and Technology
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    • v.30 no.6
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    • pp.429-435
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    • 2021
  • In this study, the creation of emotional dialogue was investigated within the process of developing a robot's natural language understanding and emotional dialogue processing. Unlike an English-based dataset, which is the mainstay of natural language processing, the Korean-based dataset has several shortcomings. Therefore, in a situation where the Korean language base is insufficient, the Korean dataset should be dealt with in detail, and in particular, the unique characteristics of the language should be considered. Hence, the first step is to base this study on a specific Korean dataset consisting of conversations on emotional topics. Subsequently, a model was built that learns to extract the continuous dialogue features from a pre-trained language model to generate sentences while maintaining the context of the dialogue. To validate the model, a chatbot system was implemented and meaningful results were obtained by collecting the external subjects and conducting experiments. As a result, the proposed model was influenced by the dataset in which the conversation topic was consultation, to facilitate free and emotional communication with users as if they were consulting with a chatbot. The results were analyzed to identify and explain the advantages and disadvantages of the current model. Finally, as a necessary element to reach the aforementioned ultimate research goal, a discussion is presented on the areas for future studies.

Micropower energy harvesting using high-efficiency indoor organic photovoltaics for self-powered sensor systems

  • Biswas, Swarup;Lee, Yongju;Kim, Hyeok
    • Journal of Sensor Science and Technology
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    • v.30 no.6
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    • pp.364-368
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    • 2021
  • We developed a highly efficient organic photovoltaic (OPV) cell with a poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl)]:[6,6]-phenyl-C71-butyric acid methyl ester active layer for harvesting lower-intensity indoor light energy to power various self-powered sensor systems that require power in the microwatt range. In order to achieve higher power conversion efficiency (PCE), we first optimized the thickness of the active layer of the OPV cell through optical simulations. Next, we fabricated an OPV cell with optimized active layer thickness. The device exhibited a PCE of 12.23%, open circuit voltage of 0.66 V, short-circuit current density of 97.7 ㎂/cm2, and fill factor of 60.53%. Furthermore, the device showed a maximum power density of 45 ㎼/cm2, which is suitable for powering a low-power (microwatt range) sensor system.

Improvement of the LED Performance Using Mg Delta-doing in p Type Cladding Layer for Sensor Application (p 형 반도체 층의 Mg 델타 도핑을 이용한 센서 광원 용 LED의 성능 향상)

  • Kim, Yukyung;Lee, Seungseop;Jeon, Juho;Kim, Mankyung;Jang, Soohwan
    • Journal of Sensor Science and Technology
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    • v.31 no.1
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    • pp.31-35
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    • 2022
  • The efficacy improvement of the light emitting diode (LED) was studied for the realization of small-size, low power consumption, and highly sensitive bio-sensor instrument. The performance of the LED with Mg delta-doping at the interface of AlGaN/GaN super-lattice in p type cladding layer was simulated. The device with Mg delta-doping showed improved current, radiative recombination rate, electroluminescence, and light output power compared to the conventional LED structure. Under the bias condition of 5 V, the improved device exhibited 20.8% increase in the light output power. This is attributed to the increment of hole concentration from stable ionization of Mg in p type cladding layer. This result is expected to be used for the miniaturization, power saving, and sensitivity improvement of the bio-sensor system.

Constant Voltage Stress (CVS) and Hot Carrier Injection (HCI) Degradations of Vertical Double-date InGaAs TFETs for Bio Sensor Applications (바이오 센서 적용을 위한 수직형 이중게이트 InGaAs TFET의 게이트 열화 현상 분석)

  • Baek, Ji-Min;Kim, Dae-Hyun
    • Journal of Sensor Science and Technology
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    • v.31 no.1
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    • pp.41-44
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    • 2022
  • In this study, we have fabricated and characterized vertical double-gate (DG) InGaAs tunnel field-effect-transistors (TFETs) with Al2O3/HfO2 = 1/5 nm bi-layer gate dielectric by employing a top-down approach. The device exhibited excellent characteristics including a minimum subthreshold swing of 60 mV/decade, a maximum transconductance of 141 µS/㎛, and an on/off current ratio of over 103 at 20℃. Although the TFETs were fabricated using a dry etch-based top-down approach, the values of DIBL and hysteresis were as low as 40 mV/V and below 10 mV, respectively. By evaluating the effects of constant voltage and hot carrier injection stress on the vertical DG InGaAs TFET, we have identified the dominant charge trapping mechanism in TFETs.

Water-Sloshing-Based Electricity Generating Device via Charge Separation and Accumulation (전하 분리와 축적을 통한 물의 슬로싱 현상 기반 전기에너지 발생 장치)

  • Cha, Kyunghwan;Heo, Deokjae;Lee, Sangmin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.1
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    • pp.98-101
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    • 2022
  • Liquid-based Triboelectric nanogenerator (L-TENG) is one of the alternatives to solid-based Triboelectric nanogenerator (S-TENG) because of the absence of surface damage which can decrease the durability of the generator. However, the L-TENG also has an obvious drawback of significantly lower output than that of S-TENG. This article produces water-sloshing-based electricity generating device (W-ED) with a new design of L-TENG that improves electrical output in portable form. The dual-electrode system, consisting of closed-loop circuit and inner electrode which enables water to contact directly in the bottle, can generate the open-circuit voltage and the short-circuit current of up to 348 V and 5.1 mA, respectively. By investigating the motion of water for each frequency, we propose that W-ED is suitable device for a variety of human motions. We expect that W-ED can be applied in small electrical devices or sensors in daily-use items.

Fabrication of the FET-based SPM probe by CMOS standard process and its performance evaluation (CMOS 표준 공정을 통한 SPM 프로브의 제작 및 그 성능 평가)

  • Lee, Hoontaek;Kim, Junsoo;Shin, Kumjae;Moon, Wonkyu
    • Journal of Sensor Science and Technology
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    • v.30 no.4
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    • pp.236-242
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    • 2021
  • In this paper, we report the fabrication of the tip-on-gate of a field-effect-transistor (ToGoFET) probe using a standard complementary metal-oxide-semiconductor (CMOS) process and the performance evaluation of the fabricated probe. After the CMOS process, I-V characteristic measurement was performed on the reference MOSFET. We confirmed that the ToGoFET probe could be operated at a gate voltage of 0 V due to channel ion implantation. The transconductance at the operating point (Vg = 0 V, Vd = 2 V) was 360 ㎂/V. After the fabrication process was completed, calibration was performed using a pure metal sample. For sensitivity calibration, the relationship between the input voltage of the sample and the output current of the probe was determined and the result was consistent with the measurement result of the reference MOSFET. An oxide sample measurement was performed as an example of an application of the new ToGoFET probe. According to the measurement, the ToGoFET probe could spatially resolve a hundred nanometers with a height of a few nanometers in both the topographic image and the ToGoFET image.