• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.633-636
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• 1998

In this study, power AlGaAs/InGaAs/GaAs PM-HEMT's for mm wave's were fabricated using Electron beam lithography and air-bridge techniques, and so on. DC and AC characteristics of the fabricated power PM-HEMTs were measured under the various bias conditions. For example, DC and RF characteristics such as S21 gain of 3.6 dB at 35 ㎓, current gain cut-off frequencies of 45 ㎓ and maximum oscillation frequencies of 100 ㎓ were carefully analyzed for design methodology of sub-mm wave power devices.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.235-239
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• 1989

This paper investigated the effect of right half plane zero on the transient response in the buck-boost DC-DC converter. And it is clarified that the damping ratio decreases gradually by increases of the feedback loop gain and the regulation system of the converter becomes unstable. From the result, we obtained the stability region about the duty ratio and the output current by evaluating the feedback loop gain.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.30B no.7
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• pp.42-49
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• 1993

In this paper, switched-capacitor building block presented which are suitable for implementation in GaAs MESFET technology. They include a current source, a gain stage, and an operational amplifier. Switched-capacitor design techniques are discussed that minimize filter sentsitivity to finite gain of the GaAs operational amplifier. Simulation results are presented on third-order elliptic lowpass ladder filter at a sampling rate of 5GHz.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.514-517
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• 1998

This paper proposed a symmetric feedback current enhancement circuit with 1.5V power supply to design a 3$^{rd}$ order butterworth low pass filter. The proposed filter designed on 0.8.mu.m CMOS n-well double poly/double metal process simulated in HSPICE composed of the 3dB frequency enhancement circuit and the unity-gain frequency enhancement circuit. The simulation result on the design filter shows the badnwith of 25MHz, phase of 92.6 .deg. and power consumption of 0.3mW..

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.99.2-99
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• 2001

An electronically tunable current-mode second-order multifunctional filter is described in this paper. The proposed filter consists of two four-terminal floating nullors (FTFNs), two dual-output OTAs and two grounded capacitors. The circuit can simultaneously realize the lowpass, bandpass and highpass current transfer functions from the same configuration without changing the circuit configuration and elements. The natural angular frequency we and the parameter wo/Q can be orthogonally controlled through adjusting the transconductance gain of OTA. PSPICE simulation results are employed to confirm the circuit performance.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.159-165
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• 1995

A gate-recessed structure is introduced to SOI MOSFET's in order to increase the source-to-drain breakdown voltage. A significant increase in the breakdown voltage is observed compared with that of a planar single source/drain SOI MOSFET without inducing the appreciable reduction of the current drivability. We have analyzed the origin of the breakdown voltage improvement by the substrate current measurements and 2-D device simulations, and shown that the breakdown voltage improvement is caused by the reductions in the impact ionization rate and the parasitic bipolar current gain.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.270-277
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• 2000

A new Lateral Trench-MOS Bipolar-Mode Field-Effect Transistor(LTMBMFET) is proposed and verified by MEDICI simulation. By using a trench MOS structure, the proposed device can enhance the current gain without sacrificing other device characteristics such as the breakdown voltage. The channel region of the proposed device is formed between the trench MOS structure. So the effect of the substrate voltage is negligible when compared with the conventional device which has a channel region between the gate junction and the buried oxide layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.550-553
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• 2001

In this study, unity current gain frequency f$\_$T/ of GaAs MESFET is predicted with different temperatures up to 400 $^{\circ}C$. Temperature dependence parameters of the device including intrinsic carrier concentration n$\_$i/ effective mass, depletion width are considered to be temperature dependent. Small signal parameters such as gate-source, gate dran capacitances C$\_$gs/ C$\_$gd/ are correlated with transconductance g$\_$m/ to predict the unity current gain frequency. The extrinsic capacitance which plays an important roles in high frequency region has been taken into consideration in evaluating total capacitance by using elliptic integral through the substrate. From the results, f$\_$T/ decreases as the temperature increases due to the increase of small signal capacitances and the mobility degradation. Finally the extrinsic elements of capacitances have been proved to be critical in deciding f$\_$T/ which are originated from the design rule of the device.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.10
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• pp.85-92
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• 1997

For a InGaAsP buried - heterostructrue $1.3\mu\textrm{m}$ LD with fabry-perot cavity structure, the procedures of ultra-short optical pulse genration ar eanalyzed by simulating the rate equations. Investigting the effects of injected current pulse parameters such as bias $J_b$, pulse width $T_d$ and pulse amplitude $J_p$ on the generated optical pulses, we derive the optimum conditions to obtain a single optical pulse with strong peak value. We also observe that the repetition rate of current pulses needs to be restricted under a certain threshold to generate a train of single optical pulses, and that the period doubling phenomenon takes place by increasing the repitition rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.109-111
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• 2002

We have demonstrated all-opticalflip-flop based on optical bistability in a SOA/DFB-SOA with broadband gain. Input signal with the wavelength of 1340.23 nm or 1680.93 nm and the current of about 98% of the lasing threshold is injected into theDFB-SOA. Current injected into SOA is 80 mA All-optical flip-flop has various applications such as all-optical memory, demultiplexing, packet-header buffering, and retiming.