• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.414-418
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• 2012

In recent years, understanding the dynamics of DC distribution system has become critically important due mainly to the increasing needs for the interconnection of DC distributed generators and the (DC-based) electric vehicle (EV) charging systems. In this paper, the characteristics of the DC grid system connected to the compact proton exchange membrane fuel cell (PEMFC) has been studied. In particular, the voltage and current transient phenomena were measured by varying the load of the DC grid system. Also, the voltage and current ripple were measured at the different load conditions. Our experimental results clearly manifested that the study contributes to the establishment of fundamental method to characterize the small DC grid system including distributed generation.

• 반도체디스플레이기술학회지
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• 제14권3호
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• pp.27-31
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• 2015

It was the electrical properties of ZnS treated by the annealing in a vaccum and an atmosphere conditions to reseached the leakage current effect of semiconductor devices. Most samples were shown the non-linear with unipolar properties, but the ZnS annealed at $100^{\circ}C$ in a vaccum was only observed no leakage current in a range of -20 V< voltage < 15 V. The crystallinity of ZnS with no leakage current was improved and optical property was also improved. Because the ambipolar characteristics and low leakage currents originated from the extension effect of a depletion width by electron-hole combination in the depletion layer.

• Progress in Superconductivity
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• 제4권1호
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• pp.59-63
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• 2002

10-V Josephson junction array arranged in 8 parallel stripline paths was fabricated using self-aligning and reactive ion etching techniques. These techniques were introduced in detail with aim of obtaining high-quality junctions. The array has 18,184 Josephson junctions with the area of $12\mu\textrm{m}$$\times$$38\mu\textrm{m}$. The gap voltage and minimum critical current density were about 2.7 ㎷ and ／$23 A\textrm{cm}^2$, respectively. And the critical current density and leakage current at 5 volt were about 27 $A／\textrm{cm}^2$ and $5\mu\textrm{A}$, respectively When operated in the frequency range of 76-88 ㎓, the away generated constant voltage steps up to 14-19 V. The step size near 10-V was more than 7 $\mu\textrm{A}$.

• 반도체디스플레이기술학회지
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• 제17권2호
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• pp.32-35
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• 2018

The current voltage characteristics of ZTO/SiOC were researched, and the conductivities of the ZTO films as a channel material were analyzed. The current of SiOC was abruptly decreased near 0V, and then the depletion layer was formed by the disappearance of charges in the region form -12V to +12V. SiOC with Schottky contacts near ${\sim}10^{-9}$ A had the cutoff effect of leakage currents. The conductivity of ZTOs prepared on SiOC was improved in the cutoff region of the leakage current of -12V

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 E
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• pp.1816-1818
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• 1997

A triggered sparkp gap switch was fabricater and its high-voltage discharge characteristics were studied. The switch is composed of two main electrodes and one trigger electrode which is placed perpendicular to the main one. Spark gap distance was fixed by 25 mm. This device has been operated without self firing at the pulse repetition frequency from 1 to 20 Hz limited by the charging current, and the hold-off voltage from 10 to 30kV. An IGBT switch and igniter coil (originally used in a car) were adopted for a trigger circuit. In this article preliminary switch characteristics of the spark gap switch are reported with the emphasis on the description of the trigger circuit.

• 전기화학회지
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• 제3권1호
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• pp.39-43
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• 2000

n형 실리콘으로 제조한 다공성 실리콘을 이용하여 Light-emitting diode(LED)를 제작하고, LED를 구성하는데 있어서 전극 물질들을 변화시켰을 때 나타나는 LED의 전류 대 전압의 특성과 공급되어지는 전류의 세기에 따른 전계 발광 (Electroluminescence: EL) 세기의 변화를 관찰하고, 일정 전위에 대한 EL 세기의 시간 의존도를 여러 전위에 대해서 알아보았다. 또한 전극 물질과 다공성 실리콘층(Porous Silicon Layer: PSL)의 접촉 면적을 넓혀주기 위해서 In을 PSL 위에 전기 화학적으로 전착시켰을 때 나타나는 LED의 전기적 특성과 EL의 특성에 대해 알아보았다.

• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.66-69
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• 2018

This study was researched the electrical properties of semiconductor devices such as ITO, $SiO_2$, $V_2O_5$ thin films. The films of ITO, $SiO_2$, $V_2O_5$ were deposited by the rf magnetron sputtering system with mixed gases of oxygen and argon to generate the plasma. All samples were cleaned before deposition and prepared the metal electrodes to research the current-voltage properties. The electrical characteristics of semiconductors depends on the interface's properties at the junction. There are two kinds of junctions such as ohmic and schottky contacts in the semiconductors. In this study, the ITO thin film was shown the ohmic contact properties as the linear current-voltage curves, and the electrical characteristics of $SiO_2$ and $V_2O_5$ films were shown the non-linear current-voltage curves as the schottky contacts. It was confirmed that the electronic system with schottky contacts enhanced the electronic flow owing to the increment of efficiency and increased the conductivity. The schottky contact was only defined special characteristics at the semiconductor and the interface depletion layer at the junction made the schottky contact which has the effect of leakage current cutoff. Consequently the semiconductor device with shottky contact increased the electronic current flow, in spite of depletion of carriers.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
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• pp.115-120
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• 2003

In a motor driving, the current rate is directly related to the rate of a switching device and in cost reduction, the parallel switching operation is the alternatives because it has the smaller current rate through current division. There are many investigations for the parallel switching operations to equaling the current division. However it remains many problems for practical usage. The reason is that the switching characteristics are mainly relied on the different saturation voltage of each device etc. and these factors are not altered by circuit designer. In order to compensate this problem, a proper resistance is experimently inserted to the switching device. But this method can not be the optimal solution. Therefore this paper proposes a new parallel operation which uses a parallel phase winding to remove the traditional effect of switching device such as saturation voltage according to the division of current. Also the reliable and stable driving is improved through experiments and the detailed principles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.141-148
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• 2002

In a motor driving, the current rate is directly related to the rate of a switching device and in cost reduction, the parallel switching operation is the alternatives because it has the smaller current rate through current division. There are many investigations for the parallel switching operations to equaling the current division. However it remains many problems for practical usage. The reason is that the switching characteristics are mainly relied on the different saturation voltage of each device etc. and these factors are not altered by circuit designer. In order to compensate this problem, a proper resistance is experimently inserted to the switching device. But this method can not be the optimal solution. Therefore this paper proposes a new parallel operation which uses a parallel phase winding to remove the traditional effect of switching device such as saturation voltage according to the division of current. Also the reliable and stable driving is improved through experiments and the detailed principles.

• 한국표면공학회지
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• 제49권5호
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• pp.431-438
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• 2016

This research investigated the relationship between the corrosion damage characteristics of offshore wind steel substructure and the time of current density application by electrochemical accelerated short-term corrosion test. The galvanostatic corrosion was conducted on the steel specimens in natural seawater with a constant current density ranging from $1mA/cm^2$ to $200mA/cm^2$ for 1 ~ 180 min. Macro and micro observation was carried out on the surface of the corrosion damaged area using SEM and 3-dimensional analysis microscope. The weight loss of the specimens before and after was calculated as the difference between the initial weight prior to corrosion and weight after removal of the corrosion product. It was shown that during galvanostaic corrosion process, the corrosion behavior could be characterized by the onset of pitting corrosion in the early stage and the uniform corrosion in the late stage, showing damage development in the depth direction with the time of current application. The result of the 3D analysis revealed that both damage depth and surface roughness increased with increasing time of current application. The weight loss curves with time showed that a coefficient of determination ($R^2$) was relatively high for the relationship between the time of current application and weight loss. As a result, the degree of corrosion can be controlled by simply varying the time of current application.