• Solar Energy
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• v.8 no.2
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• pp.12-18
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• 1988

The effect of surface recombination current density on the saturation current density in Si solar cell has been studied. Theoretical model for surface recombination current was set up from emitter transparent model of M.A. Shibib, and saturation current of Si solar cell made by ion implantation method was also measured by digital electrometer. The theoretical surface recombination current density which is the same as saturation surface recombination current density in Shibib model was $10^{-11}[A/cm^2]$ and the measured value was ranged from $8{\times}10^{-10}$ to $2{\times}10^{-9}[A/cm^2]$. Comparing with the ideal p-n junction of Shockley, transparent emitter model shows improved result by $10^2$ order of saturation current density. But there still exists $10^2$ order of difference of saturation current density between theoretical and actual values, which are assumed to be caused by 1) leakage current through solar cell edge, 2) recombination of carriers in the depletion layer, 3) the series resistance effect and 4) the tunneling of carriers between states in the band gap.

• Journal of Electrical Engineering and Technology
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• v.10 no.2
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• pp.641-646
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• 2015

In this paper, a zinc electrowinning cell is fully optimized to achieve a uniform current distribution at electrode surfaces. To effectively deal with an electromagnetically coupled problem with multi-dimensional design variables, a sampling-based sensitivity approach is combined with a highly tuned multiphysics simulation model. The model involves the interrelation between electrochemical reactions and electromagnetic phenomena so as to predict accurate current distributions in the electrowinning cell. In the sampling-based sensitivity approach, Kriging-based surrogate models are generated in a local window, and accordingly their sensitivity values are extracted. Such unique design strategy facilitates optimizing very complicated multiphysics and multi-dimensional design problems. Finally, ten design variables deciding the electrolytic cell structure are optimized, and then the uniformity of current distribution in the optimized cell is examined through the comparison with existing cell designs.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.2B no.4
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• pp.183-190
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• 2002

This paper presents an improved Zero Voltage/Zero Current Switching (ZVZCS) commutation cell with minimum additional components, which provides soft switching at both turn-on and turn-off of main and auxiliary switches as well as diodes in a PWM DC/DC converter. The proposed soft-switching technique is suitable for not only minority, but also majority carrier semiconductor devices. The auxiliary switch of the proposed ZVZCS commutation cell is in parallel with the main switch, and therefore, the main switch and the diode are free of currentstress. The operation principles of the proposed ZVZCS commutation cell are theoretically analyzed using the PWM boost converter topology as an example. The validity of the PWM boost converter topology with the proposed ZVZCS commutation cell is verified through theoretical analysis, simulation and experimental results.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.855-858
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• 2008

Transient current (TC) on bulk-state liquid crystal mixtures was measured. We found that TC is very sensitive to impurities and the features of TC curves depend on the type of contamination, from which the quality of materials can be definitely evaluated and the type of impurities can also be revealed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.9
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• pp.1626-1631
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• 2010

The characteristics of electric current for the voltaic cell are important for electric power applications. In this paper, an electrical equivalent model consist of three resisters and a capacitance for the Cu/NaCl solution/Zn electrochemical cell is proposed. The capacitance which exists in the Zn electrode/electrolytic interface increased according to Zn electrode area, but cannot affect almost in electric current. Complex impedance plot was used to analysis the interface effect for Zn/electrolyte. This result shows that the interface is similar with the electric transmission line. The short current measurements were conducted to investigate the effects of hydrogen peroxide, the watery sulfuric acid and NaCl aqueous solution. As the hydrogen peroxide increased, the electric current increased because the hydrogen gas being converted with the water. Also electric current increased significantly with increase of the hydrogen ion with the watery sulfuric acid and increased with increase of $Na^+$ ion and $Cl^-$ion in the NaCl electrolyte.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.294-298
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• 2003

In this paper, the new zero-current-transition (ZCT) circuit cell is proposed. The main switch is turned-off under the zero current and zero voltage condition, and there is no additional current stress and voltage stress in, the main switch and the main diode. The Auxiliary switch is turned-off under the zero voltage condition, and the main diode is turned-on under the zero voltage condition, The resonant current required to obtain the ZCT is small and regenerated to the input voltage source. The operational principles of the boost converter integrated with the proposed ZCT circuit cell is analyzed theoretically and verified by the simulation and experimental result. Index terms - zero-current-transition (ZCT), zero-current- switching (ZCS), zero-voltage-switching (ZVS)

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.1-10
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• 2008

In this paper, we describe a design of a 128bit MRAM based on a new switching architecture which is Local Field Switching(LFS). LFS uses a local magnetic field generated by the current flowing through an MTJ. This mode reduces the writing current since small current can induce large magnetic field because of close distance between MTJ and the current. It also improves the cell selectivity over using conventional MTJ architecture because it doesn't need a digit line for writing. The MRAM has 1-Transistor 1-Magnetic Tunnel Junction (IT-1MTJ) memory cell structure and uses a bidirectional write driver, a mid-point reference cell block and a current mode sense amplifier. CMOS emulation cell is adopted as an LFS-MTJ cell to verify the operation of the circuit without the MTJ process. The memory circuit is fabricated using a $0.18{\mu}m$ CMOS technology with six layers o) metal and tested on custom board.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.723-726
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• 2012

A current intensity convertible CLD chip was fabricated using small and large FET cell configuration. Pinch-off current of 8.82 mA and 11.56 mA were obtained for small and large cell in the CLD chip, respectively. Constant current was fairly maintained until the breakdown voltage of 60 V. Measured knee voltage, $V_k$ were 3.8 V and 4.5 V for small and large cell, respectively. We configured current amplifying chip with parallel connection of each cells, by connecting 8 individual large cells in parallel network, 92.0 mA of current was obtained. The pinch-off constant current of CLD chip was varied very linearly with respect to the number of parallel connected cell.

• Current Photovoltaic Research
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• v.11 no.1
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• pp.34-37
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• 2023

Solar energy had become the main energy industry of renewable energy along with hydroelectric power generation. One of the technologies that contributed to the popularization of photovoltaic power and the decrease in the unit price of photovoltaic modules was the large-area solar cell. However, as the area increased, the light receiving area increased and the current value increased accordingly. Since power loss occurs when the current value was large, the number of busbar was increased to increase the current collection rate, and a technology to lower the current value through half-cutting was developed. The bus bar of the solar cell served as a passage through which the generated current was transmitted. This was because when the number of busbar decreases, the moving distance of electrons increased, so the amount of power generation decreases and when it increases, shadows occured. An important aspect of the electrode design was the optimal balance of these busbars and number of fingers. Therefore, in this study, the characteristics of the solar cell according to the number of front bus bars of the large-area solar cell were simulated using Griddler 2,5 pro. After selecting the number of busbar with the best characteristics, the difference was compared by varying the number of fingers and a better direction for the number of cutting was presented.

• Journal of the Korean Solar Energy Society
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• v.32 no.6
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• pp.106-112
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• 2012

As a fuel cell converts the chemical energy of the fuel cell into electrical energy by electrochemical reaction, the fuel cell system is uniquely integrated technique including fuel processor, fuel cell stack, power conditioning system. The residential fuel cell-PCS(Power Conditioning System) needs to convert efficiently the DC current produced by the fuel cell into AC current using single-phase DC-AC inverter. A single-phase DC-AC inverter has naturally low frequency ripple which is twice frequency of the output current. This low frequency(120Hz) ripple reduces the efficiency of the fuel cell. This paper presents notch filter with IP voltage controller to reject specific 120Hz current ripple in single-phase inverter. The notch filter is designed that suppress just only specific frequency component and no phase delay. Finally, the proposed notch filter design method has been verified with computer simulation and experimentation.