• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.34-39
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• 2014

This paper discusses the 3-level charge pumping (CP) method in planar-type Silicon-Oxide-High-k-Oxide-Silicon (SOHOS) and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) devices to find out the reason of the degradation of data retention properties. In the CP technique, pulses are applied to the gate of the MOSFET which alternately fill the traps with electrons and holes, thereby causing a recombination current Icp to flow in the substrate. The 3-level charge pumping method may be used to determine not only interface trap densities but also capture cross sections as a function of trap energy. By applying this method, SOHOS device found to have a higher interface trap density than SONOS device. Therefore, degradation of data retention characteristics is attributed to the many interface trap sites.

• Convergence Security Journal
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• v.20 no.1
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• pp.33-40
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• 2020

The rainwater pumping station located near a river prevents river overflow and flood damages by operating several pumps according to the appropriate rules against the reservoir. At the present time, almost all of rainwater pumping stations employ pumping policies based on the simple rules depending only on the water level of reservoir. The ongoing climate change caused by global warming makes it increasingly difficult to predict the amount of rainfall. Therefore, it is difficult to cope with changes in the water level of reservoirs through the simple pumping policy. In this paper, we propose a pump operating method based on deep reinforcement learning which has the ability to select the appropriate number of operating pumps to keep the reservoir to the proper water level using the information of the amount of rainfall, the water volume and current water level of the reservoir. In order to evaluate the performance of the proposed method, the simulations are performed using Storm Water Management Model(SWMM), a dynamic rainfall-runoff-routing simulation model, and the performance of the method is compared with that of a pumping policy being in use in the field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.97-101
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• 2003

New Pt/Ti and hi/Ti double-metal structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. Pt/Ti and Ni/Ti were deposited using E-beam evaporator at room temperature. The performance of Pt/Ti and Ni/Ti structures as diffusion barrier against Cu diffusion was examined by charge pumping method, gate leakage current, junction leakage current, and SIMS(secondary ion mass spectroscopy). These evaluation indicated that Pt/Ti(200${\AA}$/100${\AA}$) film is a good barrier against Cu diffusion up to 450$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.82-85
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• 1992

In this study, charge pumping method was used to investigate the Si-SiO$_2$interface characteristics of the nonvolatile SNOSFET memory devices, fabricated using the CMOS 1 Mbit processes (1.2$\mu\textrm{m}$ design rule), with thin oxide layer of 30${\AA}$ thick and nitride layer of 525${\AA}$ thick on the n-type silicon substrate (p-channel). Charge pumping current characteristics with the pulse base level were measured for various frequencies, falling times and rising times. By means of the charge dynamics in a non-steady state, the average Si-SiO$_2$interface state density and capture cross section were determined to be 3.565${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ and 4.834${\times}$10$\^$-16/$\textrm{cm}^2$, respectively. However Si-SiO$_2$ interface state densities were disributed 2.8${\times}$10$\^$-11/～5.6${\times}$10$\^$11/cm$\^$-2/～6${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ in the lover half of energy gap.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.593-596
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• 1998

Effects of current re-stress after anneal on leakage current and trapped charges in oxides are investigated. Current stress on 6 nm thick oxide has generated mostly positive traps within the oxide resulting in leakage currents. The interface states generated are several orders of magnitude smaller, determined by C-V and charge pumping method. Annealing has eliminated only the charged traps not the neutral traps, thus the leakage current and trap density are increased when the oxides are re-stressed.

• Geomechanics and Engineering
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• v.32 no.4
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• pp.387-396
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• 2023

Ground subsidence, which is a current concern that affects piled raft foundations, has occurred at a high rate in Ho Chi Minh City, Viet Nam, due primarily to groundwater pumping for water supply. In this study, the groundwater level (GWL) change affect on a piled raft foundation was investigated based on the three-dimensional finite element method (3D-FEM) using the PLAXIS 3D software. The GWL change due to global groundwater pumping and dewatering were simulated in PLAXIS 3D based on the GWL reduction and consolidation. Settlement and the pile axial force of the piled raft foundation in Ho Chi Minh subsoil were investigated based on the actual design and the proposed optimal case. The actual design used the piled foundation concept, while the optimal case applied a pile spacing of 6D using a piled raft concept to reduce the number of piles, with little increased settlement. The results indicated that the settlement increased with the GWL reduction, caused by groundwater pumping and dewatering. The subsidence started to affect the piled raft foundation 2.5 years after construction for the actual design and after 3.4 years for the optimal case due to global groundwater pumping. The pile's axial force, which was affected by negative skin friction, increased during that time.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.6
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• pp.498-505
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• 2001

This paper shows how to design a global control of water pumping system using PV array, and tracked maximum power point of PV array only the inverter using the vector control of BLDC motor, and finding the relationships among the DC magnitudes and AC ones in order to omit the DC/DC converter. Conventional MPPT controller was unstable of reason of the ripple-current of DC link in three-phase invertor. Thus, in this paper the control algorithm of BLDC motor using $i_qs$ current is composed to improve the insecurity of conventional MPPT controller To prove the excellence of the proposed method, the contents of this paper is analyzed by means of simulation and testing for the results applying the method that J. A Domfnguez had applied to asynchronous motor to BLDC motor and that of the proposed method in this paper.

• Current Optics and Photonics
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• v.6 no.5
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• pp.479-488
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• 2022

To account for the internal thermal effects of solid-state lasers, a method using a back propagation (BP) neural network integrated with a particle swarm optimization (PSO) algorithm is developed, which is a new wavefront distortion correction technique. In particular, by using a slab laser model, a series of fiber pumped sources are employed to form a controlled array to pump the gain medium, allowing the internal temperature field of the gain medium to be designed by altering the power of each pump source. Furthermore, the BP artificial neural network is employed to construct a nonlinear mapping relationship between the power matrix of the pump array and the thermally induced wavefront aberration. Lastly, the suppression of thermally induced wavefront distortion can be achieved by changing the power matrix of the pump array and obtaining the optimal pump light intensity distribution combined using the PSO algorithm. The minimal beam quality β can be obtained by optimally distributing the pumping light. Compared with the method of designing uniform pumping light into the gain medium, the theoretically computed single pass beam quality β value is optimized from 5.34 to 1.28. In this numerical analysis, experiments are conducted to validate the relationship between the thermally generated wavefront and certain pumping light distributions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.7
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• pp.21-29
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• 2004

Hot carrier degradation characteristics of Nano-scale CMOSFETs with dual gate oxide have been analyzed in depth. It is shown that, PMOSFET lifetime dominate the device lifetime than NMOSFET In Nano-scale CMOSFETs, that is, PMOSFET lifetime under CHC (Channel Hot Carrier) stress is much lower than NMOSFET lifetime under DAHC (Dram Avalanche Hot Carrier) stress. (In case of thin MOSFET, CHC stress showed severe degradation than DAHC for PMOSFET and DAHC than CHC for NMOSFET as well known.) Therefore, the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor in upcoming Nano-scale CMOSFET technology. In case of PMOSFETs, CHC shows enhanced degradation than DAHC regardless of thin and thick PMOSFETs. However, what is important is that hot hole injection rather than hot electron injection play a important role in PMOSFET degradation i.e. threshold voltage increases and saturation drain current decreases due to the hot carrier stresses for both thin and thick PMOSFET. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method. Therefore, suppression of PMOSFET hot carrier degradation or hot hole injection is highly necessary to enhance overall device lifetime or circuit lifetime in Nano-scale CMOSFET technology

• Journal of Electrochemical Science and Technology
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• v.9 no.2
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• pp.93-98
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• 2018

$MnO_2$, a metal oxide used as an electrode material in electrochemical capacitors (EDLCs), has been applied in binary oxide and conducting polymer hybrid electrodes to increase their stability and capacitance. We developed a method for electrodepositing Mn-Ni oxide/PANI, Mn-Ni oxide/PEDOT, and Mn-Ni-Ru oxide/PEDOT films on carbon paper in a single step using a mixed bath. Mn-Ni oxide/PEDOT and Mn-Ni-Ru oxide/PEDOT electrodes used in an electro-osmotic pump (EOP) have shown better efficiency compared to Mn-Ni oxide and Mn-Ni oxide/PANI electrodes through testing in water as a pumping solution. EOP using a Mn-Ni-Ru oxide/PEDOT electrode was also tested in a 0.5 mM $Li_2SO_4$ solution as a pumping solution to confirm the effect of the $Li^+$ insertion/de-insertion reaction of Ruthenium oxide on the EOP. Experimental results show that the flow rate increases with the increase in current in a 0.5 mM $Li_2SO_4$ solution compared to that obtained when water was used as a pumping solution.