• 한국자기학회지
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• 제12권1호
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• pp.14-19
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• 2002

CMR 자성물질인 LSMO 페롭스카이트 망간산화물에 $^{57}$ Fe를 미량 치환한 L $a_{0.67}$S $r_{0.33}$M $n_{0.99}$$^{57}$ F $e_{0.01}$ $O_3$물질에 대하여 그 결정학적 및 자기적 특성을 x-선 회절 실험, 진동시료 자화율 측정 실험, 자기저항 실험, Mossbauer 분광 실험을 통하여 연구하였다. 물을 용매로 한 sol-gel법을 이용하여 단일상의 polycrystalline L $a_{0.67}$S $r_{0.33}$M $n_{0.99}$$^{57}$ F $e_{0.01}$ $O_3$분말시료를 합성하였으며, 결정구조는 격자 상수 $a_{0}$ =5.480 $\AA$, $\alpha$=60.259$^{\circ}$를 갖는 rhombohedral구조로 분석되었다. 상온에서의 magnetic moment 값은 60.15 emu/g임을 알 수 있었고 큐리온도( $T_{c}$)는 375 K로 결정하였다. Mossbauer 스펙트럼은 20-400 K 영역에서 측정되었으며, 온도증가에 따라 관측되는 비대칭적 선폭증가는 이방성 초미세자기장 요동 모델로 설명할 수 있었다. 이 때 이방성 초미세 자기장이 + $H_{0}$ 및 - $H_{0}$ 로 진동하는 시간 비율은 $P_{+}$= 0.80 및 $P_{-}$= 0.20으로 분석되었다. 이방성 초미세자기장 요동 진동수로부터 온도변화에 따른 이방성 에너지를 계산하였으며, 150 K에서 124.01 erg/$cm^3$로 최대값을 갖음을 알 수 있었다.다.었다.었다.다.었다.

• Bulletin of the Korean Chemical Society
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• 제10권1호
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• pp.8-12
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• 1989

The polycrystalline powder of (BaLa)(MgMo)$O_6$ has been prepared at $1350^{\circ}C$ in a nitrogen flowing atmosphere. The powder X-ray diffraction pattern indicates that (BaLa)(MgMo)$O_6$ has a cubic perovskite structure ($a_0$ = 8.019(3) $\AA)$ with 1:1 ordering or $Mg^{2+}$ and $Mo^{5+}$ in the oxide lattice. The infrared spectrum shows two strong absorption bands with their maxima at 600(${\nu}3$) and 365(${\nu}4$) cm-1, which are attributed to $2T_{1U}$, modes of molybdenum octahedra MoO6 in the crystal lattice. According to the magnetic susceptibility measurement, the compound shows a paramagnetic behavior which follows the Curie-Weiss law below room temperature with the effective magnetic moment 1.60(1){$\mu}B$, which is consistent with that of spin only value ($1.73{\mu}B$) for $Mo^{5+}$ ($4d^1$ electronic configuration). From the thermogravimetric and X-ray diffraction analyses, it has been found that (BaLa)(MgMo)$O_6$ decomposes gradually into $BaMoO_4$, $MoO_3$ and unidentified phases above $900^{\circ}C$ in an ambient atmosphere, absorbing about 0.25 mole $O_2$ per mole of Mo ion, which also supports that oxidation state of $Mo^{5+}$ in the (BaLa)(MgMo)$O_6$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.135-135
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• 2010

In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

• 한국자기학회지
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• 제19권3호
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• pp.85-88
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• 2009

다결정 $Ge_{1-x}Mn_x$ 박막의 자기적 상들에 관한 연구가 이루어졌다. Molecular beam epitaxy(MBE) 장비를 이용해 $400^{\circ}C$ 에서 $Ge_{1-x}Mn_x$ 박막을 성장시켰다. $Ge_{1-x}Mn_x$ 박막의 캐리어 유형은 P타입 이였고, 전기 비저항 값은 $4.0{\times}10^{-2}{\sim}1.5{\times}10^{-4}ohm-cm$이었다. 자기적인 특성과 미세구조의 분석에 기초하여 $Ge_{1-x}Mn_x/SiO_2$/Si(100) 박막에 310 K 이내의 큐리에온도를 지닌 강자성의 $Ge_3Mn_5$ 상이 형성되었음을 알 수 있었다. 게다가, $Ge_3Mn_5$ 상이 형성된 $Ge_{1-x}Mn_x$ 박막은 20 K, 9 T의 자기장에서 약 9%의 음의 자기저항을 보였다.

• 한국결정성장학회지
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• 제15권3호
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• pp.124-127
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• 2005

[ $Ti:LiNbO_3$ ], 광도파로 제작을 위해 큐리온도$(T_c)$ 아래에서 백금박스 내에서 알곤 과 산소 분위기 내에서 열처리 과정 동안 기판 표면의 강유전 도메인 특성 변화를 관찰하였다. 열처리 된 $LiNbO_3$ 기판의 +Z면의 경우 전체적으로 약 $1.6{\mu}m$ 두께로 도메인 반전이 이루어 졌으며, 표면에서 etch hillock이 관찰되었다. $LiNbO_3$ 결정 표면의 Li 이온이 외부로 확산 되는 영향을 감소시킬 수 있는 환경에 있는 기판 면에서 하나의 도메인이 관찰되었으며, 이때 결정 표면에서의 식각특성, 결정성 및 양이온 분포변화에 관하여 X-선 회절, AFM 및 SIMS를 이용하여 분석하였다.

• 한국재료학회지
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• 제19권4호
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• pp.198-202
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• 2009

For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of $(1\;-\;x)Pb(Zr_{0.515}Ti_{0.485})O_3$ - $xPb(Sb_{1/2}Nb_{1/2})O_3$ + 0.5 wt% $MnO_2$ [(1 - x)PZT - xPSN + $MnO_2$] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at $1250^{\circ}C$ for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to $1.3{\mu}m$ by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+$MnO_2$ ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + $MnO_2$ system, exhibited good piezoelectric properties: a piezoelectric constant ($d_{33}$) of 325 pC/N, an electromechanical coupling factor ($k_p$) of 70.8%, and a mechanical quality factor ($Q_m$) of 1779. The specimens with a relatively high curie temperature ($T_c$) of $305^{\circ}C$ also showed a significantly high dielectric constant (${\varepsilon}_r$) value of 1109. Therefore, the 0.96PZT - 0.04PSN + $MnO_2$ ceramics are suitable for use in ultrasonic vibrators.