• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.379-380
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• 2005

Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2\Theta$) of $27.7^{\circ}$ was well made by SEL method at annealing temperature of $250^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when $CuInS_2$ composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}m$ respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.

• Tribology and Lubricants
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• 제23권2호
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• pp.66-72
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• 2007

[ $MoS_2$ ], is a well-known metal sulfide applied as solid lubricants and an additive to prolong the life of sintered bearings under severe conditions. However, the high price of $MoS_2$ limited its wide application. This study is aimed to investigate the possibility far application to solid lubricants for $Cu_2S$ as a substitute of $MoS_2$. Bronzes added $Cu_2S$ and $MoS_2$, are produced by powder metallurgy in this study, and then evaluated their friction and wear properties., as well as sintered bronze. The sliding wear test using pin-on-disc type machine, was conducted at several sliding speeds for three type test pieces sintered bronzes added $Cu_2S$ and $MoS_2$, and sintered bronze without lubricants. Addition of $Cu_2S$ to bronze leads to relatively good friction properties, although it is not so good as addition of $MoS_2$. However, the wear properies of sintered bronze added $Cu_2S$ are better than that of sintered bronze added $MoS_2$.

• 열처리공학회지
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• 제11권2호
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• pp.111-120
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• 1998

The effects of chemical composition and thermal cycling on the martensitic transformation characteristics in Cu-rich, equiatomic and Zr-rich CuZr binary alloys have been studied by calorimetry. Only martensite could be indentified in equiatomic $Cu_{49.9}Zr_{50.1}$ alloy, while $Cu_{10}Zr_7$ and $CuZr_2$ intermetallic compounds as well as martensite were formed by rapid cooling from the melts in Cu-rich $Cu_{52.2}Zr_{47.5}$ alloy and Zr-rich $Cu_{48.4}Zr_{51.6}$ alloy, respectively. The $M_s$ temperature of $Cu_{49.9}Zr_{50.1}$ was $156^{\circ}C$ but those of $Cu_{52.5}Zr_{47.5}$ and $Cu_{48.4}Zr_{51.6}$ alloys, being $109^{\circ}C$ and $138^{\circ}C$, were lower than that of equiatomic $Cu_{49.9}Zr_{50.1}$ alloy. In all the alloys, the $M_s$ temperature has fallen but the $A_s$ temperature has risen, resulting in widening of the transformation hysteresis with thermal cycling. The anomalous characteristics in the transformation temperature are due to the presence of the intermetallic compounds i.e. $Cu_{10}Zr_7$ and $CuZr_2$ formed by an eutectoid reaction during thermal cycling in the temperature range between $-100^{\circ}C$ < $T_c$ < $400^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.121-124
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• 1998

Generally the structure of powder electroluminescent devices (PELDs) on ITO-film was makeup of the ZnS:Cu phosphor layer and BaTiO$_3$ insulating layer. The active layer, which consists of a suitably doped ZnS powder mixed in a dielectric, is sandwiched between two electrodes; one of which are ITO film and the other is aluminum. In this paper, three kinds of powder eleotroluminescent devices (PELDs) : WK-A(ITO/BaTiO$_3$/ZnS:Cu/Silver paste). WK-B(ITO/BaTiO$_3$+ZnS:Cu/Silver paste) and WK-C(ITO/BaTiO$_3$/ZnS:Cu/BaTiO$_3$/Silver paste), fabricated by spin coating method, were investigated. To evaluate the luminescence properties of three kinds of PELDs, EL emission spectroscopy, transferred charge density and time response of EL emission intensity under square wave voltage driving were measured.

• 한국광물학회지
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• 제4권1호
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• pp.43-50
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• 1991

四成分系 Cu-Fe-Sn-S 시스템의 相關係에 대한 합성실험에서 두 개의 固溶體 타입의 合成相$(Fe, Cu, Sn)_{1+x}S$와 $Cu_{2-y}Fe_{1+y}SnS_4$가 발견되었으며 이들은 成分四面體 내에서 CuS-FeS-SnS로 표시될 수 있는 reference面의 주위에서 안정한 것으로 밝혀졌다. 煎者는 섬아연석 結晶構造를 갖고 있는 단순황화물 고용체로서 온도함수인 금속과 유황의 비율(9.7-1.0/1.0)에 따라 광범위한 화학적 안정영역을 차지하고 있다. 또산 섬아연석 超格子중에 하나인 테트라헤드라이트 結晶構造를 갖고 있는 후자는 $Cu_2FeSnS_4$-FeS conode를 따라 렌즈型의 안정범위를 갖으나 subsolidus 범위(350${\circ}C$까지) 내에서 相轉移 현상이 없고 835-862${\circ}C$에서 不調和熔融을 한다. 위 두 개의 고용체는 온도변화에 따라 相互溶解度 그리고 관련된 각각의 합성상이 화학조성이 변화하는 소위 Incorporation-type Solid Solution이다. 특히 後者의 경우 섬아연석 subcell을 기본골격으로 하는 超格子의 특징적인 양상을 X-ray 연구에서 찾을 수 있으며 이 패턴을 초격자의 안전성이 높다는 것을 암시해 주고 물리, 화학적 특성이 stoichiometric phase $Cu_2FeSnS_4$와 相異하다.

• 한국표면공학회지
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• 제53권1호
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• pp.9-14
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• 2020

CuS (copper sulfide) thin films having the same thickness of 100nm were deposited on the glass substrates using by radio frequency (RF) magnetron sputtering method. RF powers were applied as a process variable for the growth of CuS thin films. The structural and optical properties of CuS thin films deposited under different power conditions (40-100W) were studied. XRD analysis revealed that all CuS thin films had hexagonal crystal structure with the preferential growth of (110) planes. As the sputtering power increased, the relative intensity of the peak with respect to the (110) planes decreased. The peaks of the two bands (264cm^-1 and 474cm^-1) indicated in the Raman spectrum exactly matched the typical spectral values of the covellite (CuS). The size and shape of the grains constituting the surface of the CuS thin films deposited under the power condition ranging from 40W to 80W hardly changed. However, the spacing between crystal grains tended to increase in proportion to the increase in sputtering power. The maximum transmittance of CuS thin films grown at 40W to 80W ranged from 50 % to 51 % based on 580nm wavelength, and showed a relatively small decrease of 48% at 100W. The band gap energy of the CuS thin films decreased from 2.62eV (at 40W) to 2.56eV (at 100W) as the sputtering power increased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1605-1608
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• 2004

Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2{\theta}$) of 27.7$^{\circ}$ was well made by SEL method at annealing temperature of 250 $^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when Cu/In composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). And lattice constant a and grain size of the thin film in S ambience were appeared a little larger than those in only vacuum. The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}$m respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.

• 한국재료학회지
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• 제23권6호
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• pp.304-308
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• 2013

The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of $Cu_2ZnSnS_4$ (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/$SiO_2$/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at $500^{\circ}C$ in a $H_2S$ gas environment. $H_2S$ (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.

• Transactions on Electrical and Electronic Materials
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• 제4권1호
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• pp.7-10
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• 2003

Single phase CuInS$_2$ thin film with the strongest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second strongest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$was well made with chalcopyrite structure at substrate temperature of 70$^{\circ}C$. annealing temperature of 250$^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 Um when the Cu/In composition ratio of 1.03, where the lattice constant of a and c were 5.60${\AA}$ and 11.12${\AA}$, respectively. The Cu/In stoichiometry of the single-phase CuInS$_2$thin films was from 0.84 to 1.3. The film was p-type when tile Cu/In ratio was above 0.99 and was n-type when the Cu/In was below 0.95. The fundamental absorption wavelength, absorption coefficient and optical band gap of p-type CuInS$_2$ thin film with Cu/In=1.3 were 837nm, 3.OH 104 cm-1 and 1.48 eV, respectively. The fundamental absorption wavelength absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film with Cu/In=0.84 were 821 nm, 6.0${\times}$10$^4$cm$\^$-1/ and 1.51 eV, respectively.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.73-73
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• 2000

Shear strength of BGA solder joints on Cu pad was studied for Cu-contained Sn n.5 a and 2.5wt.% Cu) and Sn-Pb (o.5wt.% Cu) solders, with emphasis on the roles of the C Cu-Sn intermetallic layer thickness and the roughness of the interface between the i intermetallic layer and solder. The shear strength test was performed both for a as-soldered s이der joints with soldering reaction times of 1, 2, 4 min and for aged s이der j joints at 170 C up to 16 days. The Cu addition to both pure Sn and eutectic Sn-Pb s solders increased the intermetallic layer thickness at both soldering and aging t temperatures. The Cu addition also resulted in changes in the roughness of the interface b between the intermetallic layer and solder at as-soldered states. With increasing Cu c content. the interface roughened for Sn-Cu solders whereas it flattened for Sn-Pb-Cu s solders. The shear fractures in all solder joints investigated were confined in the bulk s solder rather than through the intermetallic layer. Therefore, the effect of Cu content in s solders on the shear strength of the solder joints was primarily attributed to its i influence on the micros$\sigma$ucture of bulk solder, such as the size and spatial distributions of CU6Sn5 precipitates. In addition, the critical intermetallic layer thickness for a m maximum shear strength seemed to depend on the Cu content in bulk solder.older.