• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.327-328
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• 2000

• Applied Microscopy
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• v.46 no.1
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• pp.32-36
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• 2016

The Cu-based bulk glassy alloys in Cu-Zr-Ti-Ni systems were prepared by means of copper mold casting. The Cu-based bulk glassy alloys samples were tested by X-ray diffractomer (XRD), differential scanning calorimeter, scanning electron microscopy (SEM), Instron testing machine and Vickers hardness instruments. The result indicated that the prepared Cu-Zr-Ti-Ni alloys were bulk glassy alloys. The temperature interval of supercooled liquid region (${\Delta}T_x$) was about 45.48 to 70.98 K for the Cu-Zr-Ti-Ni alloy. The Vickers hardness was up to 565 HV for the $Cu_{50}Zr_{25}Ti_{15}Ni_{10}$ bulk glassy alloy. The $Cu_{50}Zr_{25}Ti_{15}Ni_{10}$ bulk glassy alloys were annealed in order to obtain nanocrystals. The results showed that the Vickers hardness was raise up to 630 HV from 565 HV. As shown in XRD results, the amorphous alloys changed to nanocrystals, which were $Cu_8Zr_3$, $Cu_3Ti_2$ and CuZr, improved the hardness. The SEM analysis showed that the compression fractured morphology of amorphous alloys was brittle fracture, and the fracture morphology after annealing was ductile fracture. This proved that annealing of amorphous to nanocrystals can improve the plasticity and toughness of amorphous alloys.

• Journal of Environmental Health Sciences
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• v.22 no.2
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• pp.25-31
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• 1996

The species of four heavy metals (Cr, Cu, Ni and Pb) associated with sediments (viz exchangeable, carbonates, reducible, organic and residual fractions) were determined with respect to the particle sizes and depths at four locations of the lower Kumho river. In the exchangeable fraction, 3.7~19.52% of Ni and 2.8~14.81% of Pb were found, and in the carbonates fraction 2.12~19.43% of Ni and 1.39~15.42% of Pb were found. The reducible fraction retained about 8.66~44.93% of Cr, 0.41~9.79% of Cu, 17.38~35.74% of Ni and 9.5~44.89% of Pb. In the organic fraction about 0~21.06% of Cr, 2.95~35.74% of Cu, 0~14.66% of Ni and 0~10.65% of Pb were found. The residual fraction retained about 52.6~83.53% of Cr, 63.86~86.39% of Cu, 39.66~66.16% of Ni and 39.97~71.75% of Pb. The order of release or mobility of heavy metals was Ni > Pb > Cr > Cu. Mobile fraction of heavy metals by particle sizes (1.0~0.5 mm and 0.5~0.25 mm) was found to be higher in particle sizes 1.0~0.5 mm than that of 0.5~0.25 mm. The release or mobility of heavy metals by depths (0~5 cm, 5~10 cm and 10~15 cm) was found to be higher in the upper sediments than in the lower sediments, except Cu.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.389-402
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• 1999

Single crystal of Li2Cu1-xMxO4 (M=Ni, Zn) are promising as a substrate to realize superconducting electronic devices. The distribution coefficients of Ni and Zn to the Cu site in La2CuO4 (LCO) were estimated by the zone melting technique to grow high quality single crystals of La2Cu1-xMxO4(M=Ni, Zn). The distribution coefficient value of Ni was estimated to be 4.2 and that of Zn was estimated to be 0.66, respectively. Suitable solvent compositions were determined using these values to grow single crystals by he traveling floating zone (TSFZ) method. Single crystal of LCO, La2Cu1-xMxO4(M=Ni(x=0.01, 0.02, 0.03, 0.04), Zn(x=0.01, 0.02, 0.03) of high homogeneity were grown. The behaviors of the magnetization of these as-grown crystals do not indicate superconductivity except LCO. Ni or Zn substitution can make LCO non superconductor. This fact suggest that single crystals substituted by Ni or Zn are useful as substrate crystals.

• Journal of Sensor Science and Technology
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• v.13 no.6
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• pp.405-410
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• 2004

Compensation wires for Pt/Pd thermocouple was manufactured using Cu/Ni alloys. Their thermoelectric voltage has been tested from room temperature to about $150^{\circ}C$. Alloys of $Cu_{95.5}Ni_{4.5}$ and $Cu_{89.5}Ni_{10.5}$ introduced only small emf differences to Pt/Pd thermocouples, indicating a real possibility of industrial use. Above $1000^{\circ}C$, the temperature difference was expected to he small as ${\pm}0.5^{\circ}C$, and the difference would be minimized by adjusting the Ni content with a small amount.

• Korean Journal of Metals and Materials
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• v.49 no.11
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• pp.905-909
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• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surfaces. One of the available front metal contacts is Ni/Cu plating, which can be mass produced via asimple and inexpensive process. A selective emitter, meanwhile, involves two different doping levels, with higher doping (${\leq}30{\Omega}/sq$) underneath the grid to achieve good ohmic contact and low doping between the grid in order to minimize the heavy doping effect in the emitter. This study describes the formation of a selective emitter and a nickel silicide seed layer for the front metallization of silicon cells. The contacts were thickened by a plated Ni/Cu two-step metallization process on front contacts. The experimental results showed that the Ni layer via SEM (Scanning Electron Microscopy) and EDX (Energy dispersive X-ray spectroscopy) analyses. Finally, a plated Ni/Cu contact solar cell displayed efficiency of 18.10% on a $2{\times}2cm^2$, Cz wafer.

• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2227-2232
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• 2011

The new metrology, Advanced Poly-silicon Ultra-Trace Profiling (APUTP), was developed for measuring bulk Cu and Ni in heavily boron-doped silicon wafers. A Ni recovery yield of 98.8% and a Cu recovery yield of 96.0% were achieved by optimizing the vapor phase etching and the wafer surface scanning conditions, following capture of Cu and Ni by the poly-silicon layer. A lower limit of detection (LOD) than previous techniques could be achieved using the mixture vapor etching method. This method can be used to indicate the amount of Cu and Ni resulting from bulk contamination in heavily boron-doped silicon wafers during wafer manufacturing. It was found that a higher degree of bulk Ni contamination arose during alkaline etching of heavily boron-doped silicon wafers compared with lightly boron-doped silicon wafers. In addition, it was proven that bulk Cu contamination was easily introduced in the heavily boron-doped silicon wafer by polishing the wafer with a slurry containing Cu in the presence of amine additives.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.48-48
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• 2002

• Proceedings of the Korean Magnestics Society Conference
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• 1997.11a
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• pp.20-21
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.102-102
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• 2002