• Journal of the Korean Chemical Society
• /
• v.18 no.3
• /
• pp.202-209
• /
• 1974

Polarographic behaviors of copper and cadmium complexes with 2,2'-bipyridine and ethylenediamine in acetonitrile have been investigated by the DC and AC polarography. The reduction processes are estimated as follows; $Cu(II)-bipy. \;complex\;{\longrightarrow^{e^-}_{E_{1/2}\risingdotseq+0.1V}}\;Cu(I)-bipy.\;complex\;{\longrightarrow^{e^-}_{E_{1/2}=-0.43V}}\;Cu(Hg)$$Cu(II)-en.\;complex\;{\longrightarrow^{e^-}}\;Cu(I)-en.\;complex\;{times}\;{\longrightarrow^{e^-}_{E_{1/2}=-0.56V}}\;Cu(Hg)$$Cu(II)-bipy. \;complex\;{\longrightarrow^{e^-}_{E_{1/2}=-0.57V}}\;Cu(I)-bipy.\;complex\;{\longrightarrow^{2e^-}_{E_{1/2}=-0.97V}}\;Cd(I)-bipy\;complex$$Cu(II)-en.\;complex\;{\longrightarrow^{e^-}_{E_{1/2}=+0.05V}\;Cu(I)-en.\;complex{\longrightarrow^{e^-}_{E_{1/2}=-0.92V}}\;Cu(Hg)$ The limiting currents of all steps are controlled by diffusion. The number of ligand and the dissociation constant for Cu(Ⅰ)-bipy. complex were found to be n = 2 and $K_d=(1.5{\pm}0.1){\times}10^{-7}$, respectively.

• Journal of the Korean Chemical Society
• /
• v.37 no.9
• /
• pp.806-812
• /
• 1993

Complexes of $Cu(I)(hfac)PR_3$(P: phosphine and R: Me, Et and Bu) as Cu(I)(${\beta}$-diketonate) compounds have been synthesized and their electrochemical properties have been investigated using glassy carbon and carbon microelectrode in aprotic solvent. Reduction process of $Cu(I)(hfac)PR_3$ compounds carried out one electron pathway to Cu(0) by cyclic voltammetry in acetonitrile solution. Chronoamperometric curve using carbon microelectrode shows that these complexes are one electron process and diffusion coefficients are $4.5{\sim}6.7{\times}10^{-6}cm^2$/sec.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.4
• /
• pp.1232-1236
• /
• 2013

The Cu cation binding sites of $[Cu(I){\cdot}d(CpG){\cdot}d(CpG)-2H]^{-1}$ complex have been investigated to explain the $[Cu{\cdot}DNA]$ biological activity caused by the Cu association to DNA. The structure of $[Cu(I){\cdot}d(CpG){\cdot}d(CpG)-2H]^{-1}$ complex was investigated by electrospray ionization mass spectrometry (ESI-MS). The fragmentation patterns of $[Cu(I){\cdot}d(CpG){\cdot}d(CpG)-2H]^{-1}$ complex were analyzed by MS/MS spectra. In the MS/MS spectra of $[Cu(I){\cdot}d(CpG){\cdot}d(CpG)-2H]^{-1}$ complex, three fragment ions were observed with the loss of d(CpG), {d(CpG) + Cyt}, and {d(CpG) + Cyt + dR}. The Cu cation binds to d(CpG) mainly by substituting the $H^+$ of phosphate group. Simultaneously, the Cu cation prefers to bind to a guanine base rather than a cytosine base. Five possible geometries were considered in the attempt to optimize the $[Cu(I){\cdot}d(CpG){\cdot}d(CpG)-2H]^{-1}$ complex structure. The ab initio calculations were performed at B3LYP/6-31G(d) level.

• Applied Science and Convergence Technology
• /
• v.23 no.6
• /
• pp.351-356
• /
• 2014

The electronic structure at organic-organic interface gives essential information on device performance such as charge transport and mobility. Especially, the molecular orientation of organic material can affect the electronic structure at interface and ultimately the device performance in organic photovoltaics. The molecular orientation is examined by the change in ionization potential (IP) for metal phthalocyanines (MPc, M=Zn, Cu)/fullerene ($C_{60}$) interfaces on ITO by adding the CuI templating layer through ultraviolet photoelectron spectroscopy measurement. On CuPc/$C_{60}$ bilayer, the addition of CuI templating layer represents the noticeable change in IP, while it hardly affects the electronic structure of ZnPc/$C_{60}$ bilayer. The CuPc molecules on CuI represent relatively lying down orientation with intermolecular ${\pi}-{\pi}$ overlap being aligned in vertical direction. Consequently, in organic photovoltaics consisting of CuPc and $C_{60}$ as donor and acceptor, respectively, the carrier transport along the direction is enhanced by the insertion of CuI templaing layer. In addition, optical absorption in CuPc molecules is increased due to aligned transition matrix elements. Overall the lying down orientation of CuPc on CuI will improve photovoltaic efficiency.

• Corrosion Science and Technology
• /
• v.6 no.4
• /
• pp.198-205
• /
• 2007

The initial stages of electrochemical oxidative CuI film formation on Cu(111), as studied by means of Cyclic Voltammetry (CV), in-situ Scanning Tunneling Microscopy (STM) and ex-situ Synchrotron X-ray Photoemission Spectroscopy (SXPS), indicate a significant acceleration of copper oxidation in the presence of iodide anions in the electrolyte. A surface confined supersaturation with mobile CuI monomers first leads to the formation of a 2D-CuI film via nucleation and growth of a Cu/I-bilayer on-top of a pre-adsorbed iodide monolayer. Structurally, this 2D-CuI film is closely related to the (111) plane of crystalline CuI (zinc blende type). Interestingly, this film causes no significant passivation of the copper surface. In an advanced stage of copper dissolution a transition from the 2D- to a 3D-CuI growth mode can be observed.

• Journal of the Korean Magnetic Resonance Society
• /
• v.8 no.2
• /
• pp.86-95
• /
• 2004

A Cu(I) complex with an asymmetric TTF derivative (CET-EDTTTF) is prepared from the slow-diffusion method using CET-EDTTTF and Cu(I)Br solutions and characterized by X-ray crystallography and EPR spectroscopy. Structural analysis shows Cu(I) ions are tetrahedrally coordinated to two bridging bromides, one terminal bromide, and one S atom from CET-EDTTTF. Detailed geometrical and EPR analysis identified that the dimmer molecule contains [Cu$_2Br_4]^{2-}$ anion between two [CET-EDTTTF]$^+$ radical cations. Single-crystal EPR investigation of the complex reveals that the ganisotropy is unusually big, compared to those of the previously reported TTF+ cation radicals, implying that there is significant contribution of the Cu d-orbital to the HOMO of the complex.

• Journal of the Korean Vacuum Society
• /
• v.15 no.5
• /
• pp.485-492
• /
• 2006

Two new copper(I) complexes with organic ligands, $[Cu^I(hfac)]_2(DVTMSO)$ and $[Cu^I(hfac)]_2(HD)$ (hfac=hexafluoroacetylacetonate, DVTMSO=1,2-divinylte-tramethyl-disiloxane, HD=1,5-hexadiene) were synthesized and used for copper metal-organic chemical vapor deposition. In these compounds, two Cu(hfac) fragments are bonded by one neutral ligand forming unusual structure with respect to other Cu(I) complexes. The compounds exhibited relatively high volatility and stability when compared to other copper(I) precursors. By using the reported compounds as precursors, a continuous Cu layer was not formed but the Cu islands were only observed. And the shape and size of Cu islands are significantly changed as a function of the substrate temperature.

• Microbiology and Biotechnology Letters
• /
• v.49 no.3
• /
• pp.316-319
• /
• 2021

Restriction endonucleases play an important role in molecular cloning, clinical diagnosis, and pharmacological drug studies. In this study, DNA-templated copper nanoclusters (DNA-CuNCs) were used to detect AluI endonuclease activity due to their high fluorescence emission and rapid synthesis of DNA-CuNCs under ambient conditions. Results showed that AluI activity was detected in a highly sensitive manner at low concentrations of AluI endonuclease by the fluorescence intensity of DNA-CuNCs. Additionally, its inhibition was monitored in the presence of daidzein under optimal conditions.

• Korean Journal of Materials Research
• /
• v.11 no.3
• /
• pp.184-184
• /
• 2001

The effect of neutral ligand(L) on the precursor characteristics of (hfac)Cu(I)-L and on Cu MOCVD Process was studied. The neutral ligands of (hac)Cu(I)-L$_{x}$, such as ATMS(allytrimethylsilane), VTMS(vinyltrimethylsilane), VCH(vinylcyclohexane), MP(4-methyl-1-pentene), ACP(allylcyclopentane), and DMB(3,3-dimethyl-1-butene) were investigated. When the dissociation temperature of Cu(I)-L bond is low, low temperature deposition below $100^{\circ}C$ is possible and the resistivity of the film is low. But thermal stability of the precursor is low in this case. The resistivity is almost the same regardless of L at the deposition temperature range of $125~175^{\circ}C$. The resistivity is increased as the molecular weight of L becomes higher above $225^{\circ}C$ The vapor pressure of the precursor was closely related to the boiling point of L, the lower the boiling point of L, the higher the vapor pressurere.

• Korean Journal of Materials Research
• /
• v.11 no.3
• /
• pp.185-190
• /
• 2001

The effect of neutral ligand(L) on the precursor characteristics of (hfac)Cu(I)-L and on Cu MOCVD Process was studied. The neutral ligands of (hac)Cu(I)-L$_{x}$, such as ATMS(allytrimethylsilane), VTMS(vinyltrimethylsilane), VCH(vinylcyclohexane), MP(4-methyl-1-pentene), ACP(allylcyclopentane), and DMB(3,3-dimethyl-1-butene) were investigated. When the dissociation temperature of Cu(I)-L bond is low, low temperature deposition below $100^{\circ}C$ is possible and the resistivity of the film is low. But thermal stability of the precursor is low in this case. The resistivity is almost the same regardless of L at the deposition temperature range of $125~175^{\circ}C$. The resistivity is increased as the molecular weight of L becomes higher above $225^{\circ}C$ The vapor pressure of the precursor was closely related to the boiling point of L, the lower the boiling point of L, the higher the vapor pressurere.