• Proceedings of the KAIS Fall Conference
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• 2000.10a
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• pp.55-60
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• 2000

The adsorption isotherms can be assigned to typical Type I for Ag and Cu-treated ACFs and Type I and Type II for Ni-treated ACFs. From the DSC analysis, A $g_{0.9}$-ACF occurs only exothermic curve at the temperature of $203^{\circ}C$, and relatively stable composition curves were formed. But C $u_{0.3}$-ACF and C $u_{0.4}$-ACF occur endothermic curves at the temperature of 57.26, 107.02 and $215.87^{\circ}C$. N $i_{1.0}$-ACF occurs large endothermic curves at 59.26, 98.40 and $208.89^{\circ}C$ and N $i_{0.8}$-ACF are shown endothermic curves at 59.26 and $157.77^{\circ}C$. From the biological results, the percentages of the antibacterial effects were 96.5-100 for Ag-ACFs, 92.3-99.8 for Cu-ACFs and 95.5-100 for Ni-ACFs, respectivelylyvelylyly

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.926-931
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• 2000

The microwave dielectric properties and the microstructures as a mole fraction of (1-x)ZnNb$_2$O$_{6}$-xPb$_{5}$Nb$_4$O$_{15}$ ceramics with CuV$_2$O$_{6}$, Sb$_2$O$_3$ and glass(ZNPN ceramics) was investigated. 0.98ZN-0.02PN ceramics containing 1.5 wt% CuV$_2$O$_{6}$ 1.0 wt% Sb$_2$O$_3$ and 1.0 wt% glass had a dielectric constant($\varepsilon$$_{r}$) of 23, Qxf$_{o}$ value of 15000 and TCF(Temperature Coefficient of resonance Frequency) of -25 ppm/$^{\circ}C$ and it is possible to be co-fired with Ag electrode at 90$0^{\circ}C$. As sintered temperature increases over 90$0^{\circ}C$ the grain size of ZNPN ceramics was increasing for growth and it has poor co-fired properties with Ag electrode.e.ctrode.e.e.

• Analytical Science and Technology
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• v.15 no.6
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• pp.550-555
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• 2002

The oxidation mechanism of boratabenzene was studied. As a model compound the ferrocene analogue (${\eta}^6$-1-Methylboratabenzene)(${\eta}^5$-Pentamethylcyclopentadiennyl)iron 3 was chosen. The complex underwent irreversible oxidation in the presence of ortho proton on the ring and a methyl group on the boron atom in methanol medium. Chemical oxidations with $Hg(OAc)_2$, $HgSO_4$, $Cu(OH)_2$, $AgCF_3SO_3$ or $FeCl_3$ in MeOH gave, via a transition state [3], at first the derivates 6 and 7, which were converted to each 8 and 9.

• Journal of the Korean Society of Industry Convergence
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• v.22 no.6
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• pp.767-773
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• 2019

The thermal diffusion performance of the electronic device is a factor for evaluating the stability of the electronic device. Therefore, many of research have been conducted to improve the thermal characteristics of thermal interface materials, which are materials for thermal diffusion of electronic products. In this study, nano thermal grease was prepared by blending graphene, silver and copper nano powders into a thermal grease, a type of thermal interface materials, and the heat transfer rate was measured and compared for the purpose of investigating the improved thermal properties. As a result, the thermal properties were good in the order of graphene, silver and copper, which is thought to be due to the different thermal properties of the nano powder itself.

• Korean Journal of Metals and Materials
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• v.48 no.12
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• pp.1064-1069
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• 2010

Thin films have been used in a large variety of technological applications such as solar cells, optical memories, photolithographic masks, protective coatings, and electronic contacts. If thin films experience frequent temperature changes, thermal stresses are generated due to the difference in the coefficient of thermal expansion between the film and substrate. Thermal stresses may lead to damage or deformation in thin film used in electronic devices and micro-machined structures. Thus, knowledge of the thermomechanical properties of thin films, such as the coefficient of thermal expansion, is an important issue in determining the stability and reliability of the thin film devices. In this study, thermal cycling of Cu and Ag thin films with various microstructures was employed to assess the coefficient of thermal expansion of the films. The result revealed that the coefficient of thermal expansion (CTE) of the Cu and Ag thin films increased with an increasing grain size. However, the effect of film thickness on the CTE did not show a remarkable difference.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.327-332
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• 2019

Recently, inverter control systems have attracted immense attention to increase the energy efficiency. However, such systems use repeated on/off high currents for linear operation control, instead of the prevalent step variable current control method. Hence, there arise concerns of personal and property damage, especially due to the durability, explosive characteristics, and operating speed of the fuse, which is responsible for safety and is one of the internal components using current control. Therefore, in this paper, we propose an IEC60127-4 SMD sub-miniature fuse, consisting of Ag-Cu alloys and ceramic powder for arc soothing. The IEC60127-4 SMD sub-miniature fuse has high durability and cut-off capacity, and operates safely in dangerous circumstances caused by the inverter control system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.2
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• pp.172-177
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• 2022

The quench voltage of the second-generation superconducting wire is affected by the resistivity characteristics of the stabilization layer. The specific resistance of the stabilization layer can be changed by the deposition process using RF magnetron sputtering. In this paper, a thin film made of a homogeneous material (Ag) and a dissimilar material (Cu) was deposited on the stabilization layer of the second-generation superconducting wire through RF magnetron sputtering. We found that the specific resistance was reduced by increasing the thickness of the stabilization layer. The reduction in the resistivity of the stabilization layer led to a decrease in the quench voltage of the second-generation superconducting wire. We suggest that various characteristic changes of the second-generation superconducting wire can be expected through the successful change in the resistivity of the stabilization layer of the proposed deposition process.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.293.1-293.1
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• 2016

Various materials including conductive, dielectric, and semi-conductive materials, constitute suitable candidates for printed electronics. Metal nanoparticles (e.g. Ag, Cu, Ni, Au) are typically used in conductive ink. However, easily oxidized metals, such as Cu, must be processed at low temperatures and as such, photonic sintering has gained significant attention as a new low-temperature processing method. This method is based on the principle of selective heating of a strongly absorbent film, without light-source-induced damage to the transparent substrate. However, Cu nanoparticles used in inks are susceptible to the growth of a native copper-oxide layer on their surface. Copper-oxide-nanoparticle ink subjected to a reduction mechanism has therefore been introduced in an attempt to achieve long-term stability and reliability. In this work, a flash-light sintering process was used for the reduction of an inkjet-printed Cu(II)O thin film to a Cu film. Using a photographic lighting instrument, the intensity of the light (or intense pulse light) was controlled by the charged power (Ws). The resulting changes in the structure, as well as the optical and electrical properties of the light-irradiated Cu(II)O films, were investigated. A Cu thin film was obtained from Cu(II)O via photo-thermal reduction at 2500 Ws. More importantly, at one shot of 3000 Ws, a low sheet resistance value ($0.2527{\Omega}/sq.$) and a high resistivity (${\sim}5.05-6.32{\times}10^{-8}{\Omega}m$), which was ~3.0-3.8 times that of bulk Cu was achieved for the ~200-250-nm-thick film.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1041-1046
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• 2010

The reactions between a Sn-3.0Ag-0.5Cu solder alloy and electroless Ni/electroless Pd/immersion Au (ENEPIG) surface finishes with various Pd layer thicknesses (0, 0.05, 0.1, 0.2, $0.4{\mu}m$) were examined for the effect of the Pd layer on the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow at $235^{\circ}C$. The thin layer deposition of an electroless Pd (EP) between the electroless Ni ($7{\mu}m$) and immersion Au ($0.06{\mu}m$) plating on the Cu substrate significantly retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow. Its retarding effect increased with an increasing EP layer thickness. When the EP layer was thin (${\leq}0.1{\mu}m$), the retardation of the massive spalling was attributed to a reduced growth rate of the $(Cu,Ni)_6Sn_5$ layer and thus to a lowered consumption rate of Cu in the bulk solder during reflow. However, when the EP layer was thick (${\geq}0.2{\mu}m$), the initially dissolved Pd atoms in the molten solder resettled as $(Pd,Ni)Sn_4$ precipitates near the solder/$(Cu,Ni)_6Sn_5$ interface with an increasing reflow time. Since the Pd resettlement requires a continuous Ni supply across the $(Cu,Ni)_6Sn_5$ layer from the Ni(P) substrate, it suppressed the formation of $(Ni,Cu)_3Sn_4$ at the $(Cu,Ni)_6Sn_5/Ni(P)$ interface and retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer.

• The Journal of Korean Academy of Prosthodontics
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• v.23 no.1
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• pp.39-59
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• 1985

The purpose of this study was to investigate how gap distances of 0.13mm, 0.15mm, 0.20mm, and 0.30mm affects solder joint strength from gold alloys and nickel-chromium base alloys and to examine the composition of solder gold, the solder joint of gold alloys and nickel-chromium base alloys. The tensile test specimens were prepared in the split stainless steel mold with a half dumbbell shape 2.5mm in diameter and l2mm in length. 6 pairs of specimens of each gap distance group of gold alloys and nickel-chromium base alloys were made and 48 pairs of all specimens were soldered with solder gold of 666 fineness. All soldered specimens were machined to a uniform diameter and then a tensile load was applied at a cross-head speed of 0.10mm/min using Instron Universal Testing Machine, Model 1115. The fractured specimens at solder gold of solder joint fracture with each gap distance of 0.13mm, 0.15mm, 0.20mm, and 0.30mm were examined under the Scanning Electron Microscope, JSM-35c and the composition of solder gold, the solder joint of gold alloys and nickel-chromium base alloys was analyzed by Electron Probe Micro Analyzer. The results of this study were obtained as follows: 1. In case of soldering of gold alloys, the tensile strength between gold alloys showed $37.33{\pm}2.52kg/mm^2$ at 0.13, $39.14{\pm}3.35kg/mm^2$ at 0.15mm, $43.76{\pm}2.97kg/mm^2$ at 0.20mm, and $49.18{\pm}4.60kg/mm^2$ at 0.30mm. There was statistically significant difference at each gap distance, and so the greater increase of gap distance showed the greater tensile strength. 2. In case of soldering of nickel-chromium base alloys, the tensile strength between nickel-chromium base alloys showed $34.84{\pm}4.26kg/mm^2$ at 0.13mm, $37.25{\pm}2.49kg/mm^2$ at 0.15mm, $42.91{\pm}4.32kg/mm^2$ at 0.20mm, and $46.93{\pm}4.21kg/mm^2$ at 0.30mm. There was not statistically significant difference only between 0.13mm and 0.15mm and bet ween 0.20 mm and 0.30mm, but generally the greater increase of gap distance showed the greater tensile strength. 3. The greater increase of gap distance shoed less porosities in solder gold at solder joint fracture. 4. In solder gold Au, Cu, Ag, Zn, and Sn were composed and Au and Cu were mostly distributed uniformly. 5. In solder joints of solder gold and gold alloys Au, Cu, Ag, Zn, and Sn were composed in solder gold and Au, Cu, Ag, Pt, and Pd were composed in gold alloys. Au and Cu of solder gold and gold alloys were mostly distributed uniformly and the diffusion of other elements except Pt and Pd around the solder joint was not almost found. In solder joints of solder gold and nickel-chromium base alloys Au, Cu, Ag, Zn, and Sn were composed in solder gold and Ni, Cr, and Al were composed in nickel-chromium base alloys. Au and Cu of solder gold and Ni and Cr of nickel-chromium base alloys were mostly distributed uniformly and the diffusion of other elements except Cr around the solder joint was not almost found.