• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.35-40
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• 2010

In this study, the reliability of thermal shock, thermal cycle, and complex vibration test at high temperature were examined for 3 types of lead-free solder alloys, Sn-3.5Ag, Sn-0.7Cu and Sn-5.0Sb. For the reliability test, daisychained BGA chips with ENIG-finished Cu pad was assembled with the three lead-free solders on OSP-finished PCBs. Among the 3 types solder alloys, Sn-3.5Ag solder alloy showed the highest degradation rate of electrical resistance and joint strength. On the other hand, Sn-0.7Cu solder alloy had high stability after the reliability tests.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.29-34
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• 2020

The behavior of brittle fracture of electroless nickel immersion gold (ENIG) /Sn-3.0wt.%Ag-0.5wt.%Cu (SAC305) solder joints was evaluated. The pH of the electroless nickel plating solution for ENIG surface treatment was changed from 4.0 to 5.5. As the pH of the Ni plating solution increased, pin hole in the Ni-P layer increased. The thickness of the interfacial intermetallic compound (IMC) of the solder joint increased with pH of Ni plating solution. The high speed shear strength of the SAC305 solder joint on ENIG surface finish decreased with the pH of the Ni plating solution. In addition, the brittle fracture rate of the solder joint was the highest when the pH of the Ni plating solution was 5.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.22-27
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• 1993

we prepared 70K new BiPbAgSrCaCuO superconductor used diffusion of dual layer which composed of SrCaCuO and BiPbAgCuO compound. This method is used permeation and diffusion on partial melting point of BiPbAgCuO compound. Samples were analyzed by means of X-ray diffraction analysis, Thermal analysis, critical temperature and scanning electron microscopy. It was found that the best results were obtained for spread volume (A:B=1:0.6) and sintring time 210hours.

• Electrical & Electronic Materials
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• v.6 no.6
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• pp.514-522
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• 1993

본 연구에서는 Ag/ 첨가에 의한 YB $a_{2}$C $u_{3}$ $O_{7-{\delta}}$산화물의 초전도 특성 변화를 조사하였다. Ag가 첨가된 YB $a_{2}$C $u_{3-x}$A $g_{x}$ $O_{7-{\delta}}$ 산화물 시료를 만들고 이 시료들에 대한 X-ray 회절분석, IR흡수 스펙트럼분석, 임계온도(Tc)측정 및 자화(M-H)특성 측정등을 통하여 제조된 시료의 물리적 성질을 조사하였다. X-ray 회절실험 결과로 부터 x.leq.0.03인 경우에는 YB $a_{2}$C $u_{3-x}$A $g_{x}$ $O_{7-{\delta}}$가 단일상의 물질로 존재하고 x가 증가함에 따라 불순물상( $Y_{2}$ $O_{3}$, 순Ag)이 나타남을 알 수 있었다. IR흡수의 실험결과에서 Cu와 치환되어 들어간 Ag의 Ag-O 결합에 의한 흡수 스펙트럼(670$cm^{-1}$ /)이 관측되었다. 실험 결과로 부터 치환된 Ag의 양 x가 증가함에 따라 Tc가 조금씩 낮아지는 경향이 있었으며 자화의 세기 및 임계자장( $H_{C2}$)은 급격히 감소함을 알 수 있었고 또 M-H특성곡선에는 히스테리시스 특성이 나타났다.났다..났다.다.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.5
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• pp.151-156
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• 2007

In this paper, the creep characteristics of lead and lead-free solder joint were investigated using the QFP(Quad Flat Package) creep test. Two kind of solder pastes(Sn-3Ag-0.5Cu, Sn-0.2Sb-0.4Ag-37.4Pb) were applied to the QFP solder joints and each specimen was checked the external and internal failures(i.e., wetting failure, void, pin hole, poor-heel fillet) by digital microscope and X-ray inspection. The creep test was conducted at the temperatures of $100^{\circ}C$ and $130^{\circ}C$ under the load of 15$\sim$20% of average pull strength in solder joints. The creep characteristics of each solder joints were compared using the creep strain-time curve and creep strain rate-stress curves. Through the comparison, the Sn-3Ag-0.5Cu solder joints have higher creep resistance than that of Sn-0.3Sb-0.4Ag-37.4Pb. Also, the grain boundary sliding in the fracture surface and the necking of solder joint were observed by FE-SEM.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.307-313
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• 2005

Electromigration behavior in the Sn96.5Ag3.0Cu0.5 solder lines was investigated and compared Sn96.5Ag3.0Cu0.5 with eutectic SnPb. Measurements were made for relevant parameters for electromigration of the solder, such as drift velocity, threshold current density, activation energy, as well as the product of diffusivity and effective charge number (DZ$\ast$). The threshold current density were measured to be $2.38{\times}10^4A/cm^2$ at $140^{\circ}C$ and the value represented the maximum current density which the SnAgCu solder can carry without electromigration damage at the stressing temperatures. The electromigration energy was measured to 0.56 eV in the temperature range of $110-160^{\circ}C$. The measured products of diffusivity and the effective charge number, DZ$\ast$ were $3.12{\times}10^{-10} cm^2/s$ at $110^{\circ}C$, $4.66{\times}10^{-10} cm^2/s$ at $125^{\circ}C$, $8.76{\times}10^{-10} cm^2/s$ at $140^{\circ}C$, $2.14{\times}10^{-9}cm^2/s$ at $160^{\circ}C$ SnPb solder existed incubation stage, while SnAgCu did not have incubation stage. It was thought that the diffusion mechanism of SnAgCu was different from that of SnPb.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.260-261
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• 2005

$YBa_2Cu_3O_{7-\delta}$ superconductor films have been prepared on silver substrates by electrophoretic deposition. As silver does not react with $YBa_2Cu_3O_{7-\delta}$ compound and has little influence on its superconductivity, it is usually doped in $YBa_2Cu_3O_7$ to improve the strength of the material and eliminate micro-cracks. It has been proved that Ag additive can lower the melting temperature of $YBa_2Cu_3O_{7-\delta}$ and act as linking bridge among $YBa_2Cu_3O_{7-\delta}$ particles, thus in this paper Ag doped $YBa_2Cu_3O_{7-\delta}$ thick films are prepared by electrophoretic co-deposition. As there are only some referenced experience formula and models for co-electrophoretic deposition and does not exist unified explanation, the behavior of Ag particles during co-electrophoretic deposition is also studied.

• Journal of the Korean Chemical Society
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• v.29 no.2
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• pp.137-143
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• 1985

Construction of a liquid membrane type of cupric ion selective electrode and its application to the potentiometric titration have been studied. A liquid ion-exchange membrance was prepared by extracting Cu(II) in aqueous solution into 1-(2-pyridylazo)-2-naphthol/nitrobenzene. A Ag/AgCl internal reference electrode was dipped into the aqueous reference solution of $1.00 {\times} 10^{-3}M\;Cu(NO_3)_2$ buffered with HAc-NaAc buffer solution, which was in contact with the nitrobenzene extract. The electrode showed the nernstian response to Cu(II) in the concentration range from $1.00{\times} 10^{-6}$ to $1.00{\times} 10^{-3}$M. The most suitable ion-exchanger concentration in the liquid membrane was $1.00{\times} 10^{-4}$M. The selectivity coefficients of the electrode for the various metal cations were investigated. The electrode was applied to the potentiometric titration of Cu(II) with EDTA.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.250-253
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• 2007

An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. The Ni contact was formed on the front grid pattern by electroless plating followed by anneal ing at $380{\sim}400^{\circ}C$ for $15{\sim}30$ min at $N_{2}$ gas to allow formation of a nickel-silicide in a tube furnace or a rapid thermal processing(RTP) chamber because nickel is transformed to NiSi at $380{\sim}400^{\circ}C$. The Ni plating solution is composed of a mixture of $NiCl_{2}$ as a main nickel source. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. The Ni/Cu contact was found to be well suited for high-efficiency solar cells and was successfully formed by using electroless plating and electroplating, which are more cost effective than vacuum evaporation. In this paper, we investigated low-cost Ni/Cu contact formation by electroless and electroplating for crystalline silicon solar cells.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.25-31
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• 2010

In this study, we investigated the morphology and thermal stability of interfacial phases in joint between lead free solder(Sn-3.0Ag-0.5Cu) and electroless Ni-W-P under bump metallizations(UBM) with different tungsten contents as a function of thermal aging. Content of phosphorus of each deposits was fixed at 8 wt.%, and content of tungsten was variated each 0, 3, 6 and 9 wt.%. Specimens were prepared by reflowing at $255^{\circ}C$, aging range was $200^{\circ}C$ and up to 2 weeks. After reflow process, in the electroless Ni(W)-P/solder joint, the interfacial intermetallic compound(IMC) was showed both $(Cu,Ni)_6Sn_5$ and $(Ni,Cu)_3Sn_4$. UBM and generated IMC at the interface of lead free solder was proportionally increased with aging time. The thickness of IMC was increased because the generation rate of $Ni(W)_3P$ decreased with increasing contents of W.