• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.381-388
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• 1994

A new process which co-fires the low-firing-substrate and copper conductor was studied to achieve good bond strength and low sheet resistance of conductor. Cupric oxide is used as the precursor of conductive material in the new method and the firing atmosphere of the new process is changed sequently in air H2N2. The addition of cupric oxide and variations of firing atmosphere permited complete binder-burnout in comparison with the conventional method and contributed to the improvement of resistance and bonding behaviors. The potimum conditions of this experiment to obtain the satisfactory resistance and bond strength are as follows (binder-burnout temperature in air; 55$0^{\circ}C$, reducing temperature in H2; 40$0^{\circ}C$ for 30 min, ratio of copper and cupric oxide; 60:40~30:70 wt%). The bonding mechanism between the substrate and metal was explained by metal diffusion layer in the interface and the bond strength mainly depended on the stress caused by the difference of shrinkage and thermal expansion coefficient between the substrate and metal.

• Journal of the Korean institute of surface engineering
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• v.46 no.5
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• pp.208-215
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• 2013

The aim of the present study was to improve the radiative heat dissipation of aluminum alloy, Al 1050. Resin/CuO coating and Cu/CuO composite plating were applied on aluminum alloy to improve the radiative heat dissipation. Resin/CuO coating was made using thermosetting silicon resin and Cu/CuO composite plating was made in pyrophosphate copper plating bath. Radiant heat flux($W/m^2$) was measured by self-produced radiant heat measurement device to compare each specimen. The cross section of specimen and chemical bonding of surface were analyzed by FE-SEM, XPS and FT-IR. As a result, radiant heat of Resin/CuO coating was higher than Cu/CuO composite plating due to the adhesion with aluminum plate and the difference in chemical bonding. But, Both of them were higher than aluminum alloy. In order to confirm the result of experiment, aluminum plate, Resin/CuO coating and Cu/CuO composite plating sample were applied LED and measured the LED temperature. As a result, LED temperature of samples were matched previous results and confirmed coated samples were lower about 10 degrees than the aluminum alloy.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.67-74
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• 2011

Keys to high wiring density semiconductor packages include flip-chip bonding and build-up substrate technologies. The current issues are the establishment of a fine pitch flip-chip bonding technology and a low coefficient of thermal expansion (CTE) substrate technology. In particular, electromigration and thermomigration in fine pitch flipchip joints have been recognized as a major reliability issue. In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints. In addition, the effects of crystallographic orientation of Sn on electromigration were observed in the Cu/SAC305/Cu joints. In the thermomigration test, Cu dissolution was accelerated on the hot side, and formation of IMCs was enhanced on the cold side at a thermal gradient of about $60^{\circ}C$/cm, which was lower than previously reported. The rate of Cu atom migration was found comparable to that of electromigration under current conditions.

• Journal of Welding and Joining
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• v.15 no.4
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• pp.90-98
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• 1997

A copper-tungsten sintered alloy(Cu-W) has been friction welded to a tough pitch copper in order to investigate the effect of friction pressure on bonding strength and a charicteristic of fracture. The tensile strength of the friction welded joint was increased up to 90% of the Cu base metal under the condition of friction time 1.2 sec, friction pressure 4.5kgf/$\textrm{mm}^2$ and upset pressure 10kgf/$\textrm{mm}^2$. From the results of fracture surface analysis, the increase of friction pressure could remarkably decrease the force and the time to be normally acted on weld interface. The W particles which were included in the plastic zone of Cu side could induce fracture adjacent to the weld interface because their existance in Cu induces a decrease in available section area and an increase in notch effect. Therefore, the tensile strength was decreased at high friction pressure (6kgf/$\textrm{mm}^2$) because the destruction of W was increased by an increase in mechanical force and crack was formed at weld interface.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.1-8
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• 2022

High-density packaging technologies, including Through-Si-Via (TSV) technologies, are considered important in many fields such as IoT (internet of things), 6G/5G (generation) communication, and high-performance computing (HPC). Achieving high integration in two dimensional packaging has confronted with physical limitations, and hence various studies have been performed for the three-dimensional (3D) packaging technologies. In this review, we described about the causes and effects of scallop formation in TSV, the scallop-free etching technique for creating smooth sidewalls, Cu pillar and Cu-SiO₂ hybrid bonding in TSV. These technologies are expected to have effects on the formation of high-quality TSVs and the development of 3D packaging technologies.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.31-37
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• 2009

Cu-Cu thermo-compression bonding process was successfully developed as functions of the $N_2+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the quantitative interfacial adhesion energy was measured by 4-point bending test. While the pre-annealing with $N_2+H_2$ gas below $200^{\circ}C$ is not effective to improve the interfacial adhesion energy at bonding temperature of $300^{\circ}C$, the interfacial adhesion energy increased over 3 times due to post-annealing over $250^{\circ}C$ after bonding at $300^{\circ}C$, which is ascribed to the effective removal of native surface oxide after post-annealing treatment.

• Journal of Welding and Joining
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• v.3 no.2
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• pp.27-34
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• 1985

The mechanical properties and bonding mechanism of aluminum, copper and mild steel have been determined in cold pressure welding. The brittle cover layer to be established by scratch-brushing plays an important role in bond strength and has an influence on the threshold of deformation. The cold pressure welding was achieved at 54% of height reduction in A1-A1, 75% in Cu-Cu, 56% in Al-Cu, and 74% in Cu-steel. The height reduction at which the bond strength of weld interface was the same as the tensile strength of base metal should be over 76% in Al-Al, 82% in Cu-Cu, and 78% in Al-Cu.

• Korean Journal of Metals and Materials
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• v.50 no.12
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• pp.939-948
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• 2012

A 3-ply clad metal consisting of aluminum and copper was fabricated by roll bonding process and the microstructures and mechanical properties of the roll-bonded and post-roll-bonding heat treated Cu/Al/Cu clad metal were investigated. A brittle interfacial reaction layer formed at the Cu/Al interfaces at and above $400^{\circ}C$. The thickness of the reaction layer increased from $12{\mu}m$ at $400^{\circ}C$ to $28{\mu}m$ at $500^{\circ}C$. The stress-strain curves demonstrated that the strength decreased and the ductility increased with heat treatment up to $400^{\circ}C$. The clad metal heat treated at $300^{\circ}C$ with no indication of a reaction layer exhibited an excellent combination of the strength and ductility and no delamination of layers up to final fracture in the tensile testing. Above $400^{\circ}C$, the ductility decreased rasxpidly with little change of strength, reflecting the brittle nature of the intermetallic interlayers. In Cu/Al/Cu clad heat treated above $400^{\circ}C$, periodic parallel cracks perpendicular to the stress axis were observed at the interfacial reaction layer. In-situ optical microscopic observation revealed that cracks were formed in the Cu layer due to the strain concentration in the vicinity of horizontal cracks in the intermetallic layer, promoting the premature fracture of Cu layer. Vertical cracks parallel to the stress axis were also formed at 15% strain at $500^{\circ}C$, leading to the delamination of the Cu and Al layers.

• Korean Journal of Metals and Materials
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• v.47 no.1
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• pp.26-31
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• 2009

The effects of $Ar/O_2$ ion-beam pre-treatment conditions on the interfacial adhesion energy of sputterdeposited Cu thin film to FR-4 substrate were systematically investigated in order to understand the interfacial bonding mechanism for practical application to advanced chip-in-substrate package systems. Measured peel strength increases from $45.8{\pm}5.7g/mm$ to $61.3{\pm}2.4g/mm$ by $Ar/O_2$ ion-beam pre-treatment with anode voltage of 64 V. Interfacial bonding mechanism between sputter-deposited Cu film and FR-4 substrate seems to be dominated by chemical bonding effect rather than mechanical interlocking effect. It is found that chemical bonding intensity between carbon and oxygen at FR-4 surface increases due to $Ar/O_2$ ion-beam pretreatment, which seems to be related to the strong adhesion energy between sputter-deposited Cu film and FR-4 substrate.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.79-83
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• 2006

The first quantitative structure determination has been obtained for Cu(100)/glycine $(NH_2CH_3COOH)$. The molecule is adsorbed on the surface via two functional groups: the nitrogen of the amino group and one or both two oxygen atoms of the carboxylate group are bonded in near atop site. The Cu-N is tilted $5^{\circ}\pm4^{\circ}C$, away from the surface normal whilst the Cu-O is tilted by $9^{\circ}\pm2^{\circ}C$. The chemical bonding lengths are determined with $2.05\pm0.02\;{\AA}$ for both Cu-N and Cu-O. This bonding geometry is similar to that of glycine on Cu(110). A reanalysis of O Is from the Cu(110)$(2\times3)$pg-glycine show two oxygen atoms are inequivalent, with one being offset $0.29\;{\AA}$ more than the other.