• Journal of Powder Materials
• /
• v.27 no.1
• /
• pp.25-30
• /
• 2020

Recently, the amount of heat generated in devices has been increasing due to the miniaturization and high performance of electronic devices. Cu-graphite composites are emerging as a heat sink material, but its capability is limited due to the weak interface bonding between the two materials. To overcome these problems, Cu nanoparticles were deposited on a graphite flake surface by electroless plating to increase the interfacial bonds between Cu and graphite, and then composite materials were consolidated by spark plasma sintering. The Cu content was varied from 20 wt.% to 60 wt.% to investigate the effect of the graphite fraction and microstructure on thermal conductivity of the Cu-graphite composites. The highest thermal conductivity of 692 W m^-1K^-1 was achieved for the composite with 40 wt.% Cu. The measured coefficients of thermal expansion of the composites ranged from 5.36 × 10^-6 to 3.06 × 10^-6K^-1. We anticipate that the Cu-graphite composites have remarkable potential for heat dissipation applications in energy storage and electronics owing to their high thermal conductivity and low thermal expansion coefficient.

• KSCE Journal of Civil and Environmental Engineering Research
• /
• v.10 no.2
• /
• pp.137-145
• /
• 1990

In this research, biological uptake of heavy metals(Cd(II), Cu(II), Zn(II)) was measured under various conditions ; pH, initial heavy metal concentration, temperature, contact time and the amount of biomass through batch test. From this research, it was found that heavy metals might be removed through adsorption and accumulation in activated sludge process. Heavy metals were highly concentrated by microbial floc in activated sludge. Also, the removal efficiency was reached up to 80~90% within and after 1 hour the increase of removal efficiency was minimal. The order of accumulation efficiency was Cu(II)>Zn(II)>Cd(II), and the bonding strength between heavy metals and microbial floc may be expressed in order of Cu(II)>Zn(II)>Cd(II).

• Journal of the Microelectronics and Packaging Society
• /
• v.16 no.3
• /
• pp.67-73
• /
• 2009

Compared to the chip-bonding process utilizing solder bumps, flip chip process using Cu pillar bumps can accomplish fine-pitch interconnection without compromising stand-off height. Cu pillar bump technology is one of the most promising chip-mounting process for RF packages where large gap between a chip and a substrate is required in order to suppress the parasitic capacitance. In this study, Cu pillar bumps and Sn bumps were electroplated on a chip and a substrate, respectively, and were flip-chip bonded together. Contact resistance and chip shear force of the Cu pillar bump joints were measured with variation of the electroplated Sn-bump height. With increasing the Sn-bump height from 5 ${\mu}m$ to 30 ${\mu}m$, the contact resistance was improved from 31.7 $m{\Omega}$ to 13.8 $m{\Omega}$ and the chip shear force increased from 3.8 N to 6.8 N. On the contrary, the aspect ratio of the Cu pillar bump joint decreased from 1.3 to 0.9. Based on the variation behaviors of the contact resistance, the chip shear force, and the aspect ratio, the optimum height of the electroplated Sn bump could be thought as 20 ${\mu}m$.

• Journal of Korea Foundry Society
• /
• v.29 no.5
• /
• pp.198-203
• /
• 2009

In order to manufacture copper ultra fine wire used for bonding wire in integrated circuit package, continuous casting process, which can produce high purity copper rod with small cross section, and wiredrawing process have to be optimized to prevent wire brakeage during entire manufacturing process of fine wire. The optimum condition for producing copper rod with mirror surface has to established by investigation of the effects of several parameters such as withdrawal speed, superheat and rod diameter on grain morphology of the cast rod and on its drawing characteristics to fine wire. The purpose of this study is to propose the optimized process parameters in continuous casting process in order to produce cast rod without internal defects, and to predict microstructure orientation suitable for wire drawing process.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.16 no.12
• /
• pp.8679-8683
• /
• 2015

Using a surface modification technique, ion beam assisted deposition (IBAD) of Ti thin film it becomes possible to prepare an active ceramic surface to braze $Al_2O_3$-STS304 with conventional Ag-Cu eutectic composition filler metal. Researches on bonding formations at interfaces of ceramic joints were mainly related on the development of filler metals to ceramic, the process parameters, and clarifications of reaction products. From the results, the reactive brazing is a very convenient technique compared to the conventional Mn-Mo method. However melting point of reactive filler is still higher than that of Ag-Cu eutectic and it forms the brittle inter metallic compound. Recently several new approaches are introduced to overcome the main shortcomings of the reactive metal brazing in ceramic-metal, metal vapor vacuum arc ion source was introduced to implant the reactive element directly into the ceramics surface, and sputter deposition with sputter etching for the deposition of active material.

• Korean Journal of Materials Research
• /
• v.20 no.8
• /
• pp.434-438
• /
• 2010

The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

• Journal of the Microelectronics and Packaging Society
• /
• v.26 no.3
• /
• pp.51-57
• /
• 2019

To protect the Cu surface from oxidation in air, a two-step plasma process using Ar and $N_2$ gases was studied to form a copper nitride passivation as an anti-oxidant layer. The Ar plasma removes contaminants on the Cu surface and it activates the surface to facilitate the reaction of copper and nitrogen atoms in the next $N_2$ plasma process. This study investigated the effect of Ar plasma on the formation of copper nitride passivation on Cu surface during the two-step plasma process through the full factorial design of experiment (DOE) method. According to XPS analysis, when using low RF power and pressure in the Ar plasma process, the peak area of copper oxides decreased while the peak area of copper nitrides increased. The main effect of copper nitride formation in Ar plasma process was RF power, and there was little interaction between plasma process parameters.

• Journal of the Korean Chemical Society
• /
• v.36 no.4
• /
• pp.477-484
• /
• 1992

Using semiempirical molecular orbital method, ASED-MO of extended Huckel Theory, we were investigated chemical bonds and electronic properties of Cu atom in a chain and a layer for Y123 and Y124 superconductors from VEP (valence electron population), DOS (density of state), and COOP (crystal orbital overlap population). In order to investigate environmental effects of Cu atom for Y123 and Y124 superconductors, we introduced charged cluster models with point charge and without point charge into our calculations. As a result of ASED-MO calculations, the Cu atom in the layer acts as electron acceptor and the Cu atom in the chain acts as electron donor for Y123 and Y124 superconductors. The oxidation state of Cu atom for Y123 and Y124 superconductors without point charge is higher in the chain than in the layer. The oxidation state of Cu atom in the layer for Y123 superconductor is higher than that in the layer for Y124 superconductor. The Cu atom in the layer and the chain for Y123 superconductor does not largely affect on the environmental effect. However, the Cu atom in the layer and the chain for Y124 superconductor does largely affect on it. Also, electron population and chemical bonding of Cu1-O4, Cu2-O4, and Cu1-Cu2 for Y123 superconductor are far different from Y124 superconductor.

• Proceedings of the KWS Conference
• /
• v.43
• /
• pp.46-48
• /
• 2004

• Proceedings of the KIEE Conference
• /
• 2003.11a
• /
• pp.370-372
• /
• 2003

As there expands the usage of Al-Cu connections to interface aluminum and copper in power distribution systems, efforts to mitigate the mechanical, electrical or electro-chemical degradation are widely spreading. The explosive bending technology, in particular, has been thought as a countermeasure for the degradation. In this paper, electrochemical analysis and optical microscopic observation are carried out in order to compare the corrosion resistivities of the commercial compression type bimetallic sleeve and the explosion type bimetallic sleeve. The results show that the explosive bonding technology can prevent the interfacial corrosion caused by the formation of crevices and pits as well as from galvanic potential difference.