• Title/Summary/Keyword: Cu-ferrite

Search Result 171, Processing Time 0.025 seconds

Low Temperature Sintering Mg-Zn Ferrites (Mg-Zn Ferrites의 저온소결화)

  • Kwon Oh-Heung
    • Resources Recycling
    • /
    • v.12 no.6
    • /
    • pp.8-12
    • /
    • 2003
  • According to the recent trend to raise the horizontal scan frequency to increase the image refinement of the High Definition TV and High Resolution Display, material with low core loss is required for the ferrite core for deflection yoke, which is secured even in the high frequency range. liking notice of the influence on the fine structure of Mg-Zn ferrite by the chemical com position and process, low temperature sintering was proceeded. Cu was added to the low loss Mg-Zn system ferrite. After select-ing MgO, ZnO, $Fe_2$$O_3$, CuO, MgO was substituted for CuO while varying the composition ratio. Then the sample was sintered for 3 hours between $980~1350^{\circ}C$ Magnetic permeability, power consumption, shrinkage rate, core loss were measured. The start-ing temperature to test the shrinkage of the sample was nearby $900^{\circ}C$, it increased according to the substitution process of Cu, and the firing temperature was lowered about $-50~-75^{\circ}C$ alongside of the process.

Magnetic Properties of NiZnCu Ferrite for Multilayer Chip Inductors (칩인덕터용 NiZnCu Ferrite의 자기적 특성 연구)

  • An, Sung-Yong;Moon, Byeong-Chol;Jung, Hyun-Chul;Jung, Hyun-Jin;Kim, Ic-Seob;Hahn, Jin-Woo;Wi, Sung-Kwon
    • Journal of the Korean Magnetics Society
    • /
    • v.18 no.2
    • /
    • pp.58-62
    • /
    • 2008
  • $Ni_{0.4}Zn_{0.4}Cu_{0.2}Fe_2O_4$ ferrite was fabricated by solid stat reaction method and sol-gel method. Because of the drawbacks of each method, we combined these two methods together. We proposed and experimentally verified that nanocrystalline ferrite additive was effective on improving the densification behavior and magnetic properties of NiZnCu ferrites for multilayer chip inductors. The initial permeability of the toroidal core Sample with 20 wt% nanocrystalline ferrite increased from 78.1 to 178.2 as annealing temperature is increased from $880^{\circ}C$ to $920^{\circ}C$. The density, shrinkage and saturation magnetization were increased with increasing annealing temperature, which was attributed to the decrease of additive grain size and increase of sintering density.

Reaction Characteristics of 2-step Methane Reforming over [Cu, Ni] Frrite/$ZrO_2$ ([CU, Ni] ferrite/$ZrO_2$ 상에서 2단계 메탄 개질 반응 특성)

  • Yoo, Byoung-Kwan;Cha, Kwang-Seo;Kim, Hong-Soon;Kang, Kyoung-Soo;Park, Chu-Sik;Kim, Young-Ho
    • Transactions of the Korean hydrogen and new energy society
    • /
    • v.19 no.6
    • /
    • pp.520-528
    • /
    • 2008
  • 2-step methane reforming, consisting of syn-gas production and water splitting step, was carried out over Cu-ferrite/$ZrO_2$. To improve the reactivity over Cu-ferrite/$ZrO_2$ presenting low reactivity in 2-step methane reforming, the addition of Ni was considered. As the results, the added Ni to Cu-ferrite/$ZrO_2$ improved the reactivity in syn-gas production step. However, (Cu, Ni) ferrite/$ZrO_2$ showed carbon deposition in syn-gas production step when an excess Ni was added. Furthermore, (Cu, Ni) ferrite/$ZrO_2$ showed the high durability without the deactivation of the medium during repeated ten cycles, although it showed more deposited carbon than the medium without Ni.

Magnetic and Electrical Properties of Mn-Zn Ferrite Thin Films Deposited by Ion Beam Sputtering (이온빔 스퍼터링에 의해 증착된 Mn-Zn 페라이트 박막의 자기 및 전기적 특성)

  • 조해석;하상기;이대형;주한용;김형준;김경용;제해준;유병두
    • Journal of the Korean Ceramic Society
    • /
    • v.32 no.3
    • /
    • pp.313-320
    • /
    • 1995
  • We investigated the preferred orientation, electrical and magnetic properties of the Mn-Zn ferrite thin films deposited on SiO2/Si(100) by ion beam sputtering. The Cu-added Mn-Zn ferrite thin films had a preferred orientation of (111) with a weak orientation, (311). While the Zn-added one had a strong (111) preferred orientation. The saturation magnetization of the Cu- or Zn-doped Mn-Zn ferrite films increased with increasing substrate temperature (Ts) due to the increase of grain size and the enhancement of crystallinity. For the same reason the coercivity of Cu- or Zn-doped Mn-Zn ferrite films deposited at low Ts increased with increasing Ts, but those of the films deposited at high Ts slightly decreased not only because the defect density of the films decreases but because more grains have multi-domains with increasing Ts. The resistivity of Cu- or Zn-added Mn-Zn ferrite thin fims measured by complex impedance method decreased with increasing Ts due to the ehhancement of crystallinity as well as due to the increase of grain size.

  • PDF

Interfacial Layer and Thermal Characteristics in Ni-Zn-Cu Ferrite and Pb(Fe1/2Nb1/2)O3 for the Low Temperature Co-sintering (저온 동시소결을 위한 Ni-Zn-Cu 폐라이트와 Pb(Fe1/2Nb1/2)O3에서의 열적 거동 및 계면층 특성)

  • Song, Jeong-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.20 no.10
    • /
    • pp.873-877
    • /
    • 2007
  • In order to apply a complex multilayer chip LC filter, this study has estimated the interfacial reaction and coupling properties of dielectric materials $Pb(Fe_{1/2}Nb_{1/2})O_3$ and Ni-Zn-Cu ferrite materials through low-temperature co-sintering (LTCS). PFN powders were fabricated using double calcinated at $700^{\circ}C$ and then $850^{\circ}C$. While the perovskite phase rate was found to be 91 %, after heat treatment at $900^{\circ}C$ for 6h, the perovskite phase rate and density exhibited a value of 100 % and 7.46$g/cm^3$, respectively. The PFN/Ni-Zn-Cu ferrite, PFN/CUO (or $Pb_2Fe_2O_5$) and ferrite/CuO (or $Pb_2Fe_2O_5$) were mechanically coupled through interfacial reactions after the specimen was co-sintered at $900^{\circ}C$ for 6 h. No intermediate layer exists for the mutual coupling reaction. This result indicates the possibility of low-temperature co-sintering without any interfacial reaction layer for a multilayer chip LC filter.

THE EFFECT OF Cu SUBSTITUTION ON THE PROPERTIES OF NiZn FERRITE

  • Nam, J.H.;Jung, H.H.;Shin, J.Y.;Oh, J.H.
    • Journal of the Korean Magnetics Society
    • /
    • v.5 no.5
    • /
    • pp.548-551
    • /
    • 1995
  • The effect of Cu substitution on the properties of NiZn ferrites sintered at low temperature with composition is investigated. The densification of NiCuZn ferrite in dependent upon Cu content in the composition of (N/sub 0.5-x/Cu/sub x/ Zn/sub 0.5/O)(Fe/sub 2/O/sub 3/)/sub 0.98/. Electrical resistivity is maximum at x=0.2. Dispersion characteristics of complex permeability of (Ni/sub 0.5-x/ Cu/sub x/Zn/sub 0.5/O)(Fe/sub 2/O/sub 3)/sub 0.98/ is observed above x=0.3 and relaxation frequency increases with higher temperature. The magnetic loss of NiCuZn ferrite is occurred above the Cu content x=0.3 at a low frequency.

  • PDF

Magnetic Properties of Chip Inductors Prepared with V2O5-doped Ferrite Pastes (V2O5 도핑한 페라이트 페이스트로 제조된 칩인덕터의 자기적 특성)

  • Je, Hae-June
    • Journal of the Korean Magnetics Society
    • /
    • v.13 no.3
    • /
    • pp.109-114
    • /
    • 2003
  • The purpose of this study Is to investigate the effect of $V_2$O$_{5}$ addition on the microstructures and magnetic properties of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2O_{5}$-doped NiCuZn ferrite pastes. With increasing the $V_2O_{5}$ content, the exaggerated grain growth of ferrite layers was developed due to the promotion of Ag diffusion and Cu segregation into the grain boundaries oi ferrites, which affected significantly the magnetic properties of the chip inductors. After sintering at $900^{\circ}C$, the inductance at 10 MHZ of the 0.5 wt% $V_2O_{5}$-doped chip inductor was 3.7 ${\mu}$H less than 4.2 ${\mu}$H of the 0.3 wt% $V_2O_{5}$-doped one, which was thought to be caused by the residual stress at the ferrite layers increased with the promotion of Ag diffusion and Cu segregation. The quality factor of the 0.5 wt% $V_2O_{5}$-doped chip inductor decreased with increasing the sintering temperature, which was considered to be caused by the electrical resistivity of the ferrite layer decreased with the promotion of Ag/cu segregation at the grain boundaries and the growth of the mean grain size of ferrite due to exaggerated grain growth of ferrite layers.