• Journal of Korean Vacuum Science & Technology
• /
• v.2 no.1
• /
• pp.25-31
• /
• 1998

The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out I terms of air exposure time, The reliability test of Cu/TiN/SiOF/Fi specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N2 ambient. After O2 plasma treatment,, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to $600^{\circ}C$.

• Journal of Environmental Science International
• /
• v.21 no.7
• /
• pp.787-795
• /
• 2012

The purpose of this study is to synthesize transition metal doped mesoporous silica catalyst and to characterize its surface in an attempt to decomposition of $N_2O$. Transition metal used to surface modification were Ru, Pd, Cu and Fe concentration was adjusted to 0.05 M. The prepared mesoporous silica catalysts were characterized by X-ray diffraction, BET surface area, BJH pore size, Scanning Electron Microscopy and X-ray fluorescence. The results of XRD for mesoporous silica catalysts showed typical the hexagonal pore system. BET results showed the mesoporous silica catalysts to have a surface area of 537~973 $m^2/g$ and pore size of 2~4 nm. The well-dispersed particle of mesoporous silica catalysts were observed by SEM, the presence and quantity of transition metal loading to mesoporous surface were detected by XRF. The $N_2O$ decomposition efficiency on mesoporous silica catalysts were as follow: Ru>Pd>Cu>Fe. The results suggest that transition metal doped mesoporous silica is effective catalyst for decomposition of $N_2O$.

• Current Photovoltaic Research
• /
• v.2 no.4
• /
• pp.147-151
• /
• 2014

A boron doping process using a boron tri-bromide ($BBr_3$) as a boron source was applied to form a $p^+$ emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen ($N_2$) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of $N_2$ gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the $N_2$ flow rate. The optimal flow rate for $N_2$ gas was found to be 4 slm, resulting in a sheet resistance value of $50{\Omega}/sq$ and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of $1727.72{\mu}s$ was achieved for the emitter having $51.74{\Omega}/sq$ sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.

• Journal of Magnetics
• /
• v.14 no.3
• /
• pp.114-116
• /
• 2009

The electronic properties of Cu or Pd-doped GaN at several concentrations are examined using the full-potential linear muffin-tin orbital method. For ($Cu_{0.055}Ga_{0.945}$)N, the model reveals a magnetic moment of $1.47{\mu}B$ per supercell. The range of concentrations that are spin-polarized should be restricted within narrow limits. A paramagnetic to ferromagnetic phase transition is found to occur at a Cu concentration of 5.55%.

• Journal of the Korean Chemical Society
• /
• v.49 no.6
• /
• pp.560-566
• /
• 2005

Sintered ceramic samples of pure and some copper doped layered sodium lithium tri-titanate ($Na_{1.9}Li_{0.1}Ti_{3-X}Cu_XO_{7-X}$) materials with different dopant molar percentages (0.0$Cu^{2+}$ at $Ti^{4+}$ sites in the lattice is proposed in this paper. Furthermore, three distinct regions have been identified in log(${\sigma}_{d.c.}T$) versus 1000/T plots. The lowest temperature region is attributed to electronic hopping conduction(polaron) for all copper doped derivatives and ionic conduction for lithium substituted $Na_2Ti_3O_7$.The mechanism of conduction in the intermediate region is associated interlayer ionic conduction and in the highest temperature region is associated modified interlayer ionic conduction.

• Progress in Superconductivity and Cryogenics
• /
• v.17 no.4
• /
• pp.16-20
• /
• 2015

We investigated optical properties of an electron-doped copper oxide high temperature superconductor, $Pr_{0.85}LaCe_{0.15}CuO_4$ (PLCCO) single crystal. We obtained the optical conductivity from measured reflectance at various temperatures. We found our data contained c-axis longitudinal optical (LO) phonon modes due to miscut and intrinsic lattice distortion. We applied an extended Drude model to study the correlations between charge carriers in the system. The LO phonons appear as strong sharp peaks in the optical scattering rate. We tried to remove the LO phonon modes by using the energy loss function, which also shows the LO phonons as peaks, and could not remove them completely. We extracted the electron-boson spectral density function using a generalized Allen's formula. We observed that the resulting electron-boson density show similar temperature dependence as hole-doped cuprates.

• Journal of Powder Materials
• /
• v.22 no.4
• /
• pp.254-259
• /
• 2015

$Bi_2Te_3$ related compounds show the best thermoelectric properties at room temperature. However, n-type $Bi_2Te_{2.7}Se_{0.3}$ showed no improvement on ZT values. To improve the thermolectric propterties of n-type $Bi_2Te_{2.7}Se_{0.3}$, this research has Cu-doped n-type powder. This study focused on effects of Cu-doping method on the thermoelectric properties of n-type materials, and evaluated the comparison between the Cu chemical and mechanical doping. The synthesized powder was manufactured by the spark plasma sintering(SPS). The thermoelectric properties of the sintered body were evaluated by measuring their Seebeck coefficient, electrical resistivity, thermal conductivity, and hall coefficient. An introduction of a small amount of Cu reduced the thermal conductivity and improved the electrical properties with Seebeck coefficient. The authors provided the optimal concentration of $Cu_{0.1}Bi_{1.99}Se_{0.3}Te_{2.7}$. A figure of merit (ZT) value of 1.22 was obtained for $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu chemical doping, which was obviously higher than those of $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu mechanical doping (ZT=0.56) and Cu-free $Bi_2Se_{0.3}Te_{2.7}$ (ZT=0.51).

• Korean Chemical Engineering Research
• /
• v.48 no.5
• /
• pp.654-659
• /
• 2010

We have investigated the effect of rubrene-doped CuPc hole transport layer on the performance of p-i-n type bulk hetero-junction photovoltaic device with a structure of ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al and have evaluated the current density-voltage(J-V) characteristics, short-circuit current($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and energy conversion efficiency(${\eta}_e$) of the device. By rubrene doping into CuPc hole transport layer, absorption intensity in absorption spectra decreased. However, the performance of p-i-n organic type bulk hetero-junction photovoltaic device fabricated with crystalline rubrene-doped CuPc was improved since rubrene shows higher bandgap and hole mobility compared to CuPc. Increased injection currents have effected on the performance improvement of the present device with energy conversion efficiency(${\eta}_e$) of 1.41%, which is still lower value compared to silicone solar cell and many efforts should be made to improve organic photovoltaic devices.

• Korean Journal of Materials Research
• /
• v.20 no.12
• /
• pp.676-680
• /
• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.4
• /
• pp.205-209
• /
• 2016

In this paper, piezoelectric ceramics with the composition of $(Na_{0.525}K_{0.4425}Li_{0.0375})(Nb_{0.8975}Sb_{0.065}Ta_{0.0375})O_3+0.3wt%\;CoO+x\;CuO$ ($0.005{\leq}x{\leq}0.025$) (abbreviated to NKL-NST) were fabricated for ultrasonic sensor application. The effects of CuO addition and sintering on the microstructure and the piezoelectric properties of the NKL-NST ceramics were systematically studied. Excellent piezoelectric properties such as electromchanical coupling $factor(k_p)=0.415$, piezoelectric constant $(d_{33})=166pC/N$ and piezoelectric figure of merit $d_{{33}*}g_{33}=5.47pm^2/N$ were obtained from the 2.5 mol% CuO doped NKL-NST+0.3 wt%CoO ceramics sintered at $1,000^{\circ}C$ for 3 h.