• Title/Summary/Keyword: Cu-S

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Properties of $CuInS_2$ thin film Solar Cell Fabricated by Electron beam Evaporator (전자빔 증착기로 제작한 태양전지용 $CuInS_2$ 박막특성)

  • Yang, Hyeon-Hun;Kim, Young-Jun;Jeong, Woon-Jo;Park, Joung-Yun;Park, Gye-Choon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.379-380
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    • 2005
  • Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2\Theta$) of $27.7^{\circ}$ was well made by SEL method at annealing temperature of $250^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when $CuInS_2$ composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}m$ respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.

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A Study of Sliding Friction and Wear Properties for Bronze added $Cu_2S$ as Solid Lubricants (고체윤활제 $Cu_2S$첨가 소결청동의 미끄럼 마찰마모특성 연구)

  • Lee, Han-Young;Ikenaga, Akira
    • Tribology and Lubricants
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    • v.23 no.2
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    • pp.66-72
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    • 2007
  • [ $MoS_2$ ], is a well-known metal sulfide applied as solid lubricants and an additive to prolong the life of sintered bearings under severe conditions. However, the high price of $MoS_2$ limited its wide application. This study is aimed to investigate the possibility far application to solid lubricants for $Cu_2S$ as a substitute of $MoS_2$. Bronzes added $Cu_2S$ and $MoS_2$, are produced by powder metallurgy in this study, and then evaluated their friction and wear properties., as well as sintered bronze. The sliding wear test using pin-on-disc type machine, was conducted at several sliding speeds for three type test pieces sintered bronzes added $Cu_2S$ and $MoS_2$, and sintered bronze without lubricants. Addition of $Cu_2S$ to bronze leads to relatively good friction properties, although it is not so good as addition of $MoS_2$. However, the wear properies of sintered bronze added $Cu_2S$ are better than that of sintered bronze added $MoS_2$.

A Calorimetric Study on the Martensitic Transformation Characteristics with Chemical Composition and Thermal Cycling in Cu-Zr Binary Alloys (Cu-Zr이원계 합금에서 화학조성 및 열싸이클링에 따른 마르텐사이트변태 특성의 열분석학적 연구)

  • Jang, W.Y.;van Humbeeck, J.;Jo, M.S.;Lee, J.H.;Lee, Y.S.;Kang, J.W.;Gwak, S.H.
    • Journal of the Korean Society for Heat Treatment
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    • v.11 no.2
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    • pp.111-120
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    • 1998
  • The effects of chemical composition and thermal cycling on the martensitic transformation characteristics in Cu-rich, equiatomic and Zr-rich CuZr binary alloys have been studied by calorimetry. Only martensite could be indentified in equiatomic $Cu_{49.9}Zr_{50.1}$ alloy, while $Cu_{10}Zr_7$ and $CuZr_2$ intermetallic compounds as well as martensite were formed by rapid cooling from the melts in Cu-rich $Cu_{52.2}Zr_{47.5}$ alloy and Zr-rich $Cu_{48.4}Zr_{51.6}$ alloy, respectively. The $M_s$ temperature of $Cu_{49.9}Zr_{50.1}$ was $156^{\circ}C$ but those of $Cu_{52.5}Zr_{47.5}$ and $Cu_{48.4}Zr_{51.6}$ alloys, being $109^{\circ}C$ and $138^{\circ}C$, were lower than that of equiatomic $Cu_{49.9}Zr_{50.1}$ alloy. In all the alloys, the $M_s$ temperature has fallen but the $A_s$ temperature has risen, resulting in widening of the transformation hysteresis with thermal cycling. The anomalous characteristics in the transformation temperature are due to the presence of the intermetallic compounds i.e. $Cu_{10}Zr_7$ and $CuZr_2$ formed by an eutectoid reaction during thermal cycling in the temperature range between $-100^{\circ}C$ < $T_c$ < $400^{\circ}C$.

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A Study on Powder Electroluminescencent Device using ZnS:Cu (ZnS:CU를 이용한 후막 전계 발광소자에 관한 연구)

  • 이종찬;박대희;박용규
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.121-124
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    • 1998
  • Generally the structure of powder electroluminescent devices (PELDs) on ITO-film was makeup of the ZnS:Cu phosphor layer and BaTiO$_3$ insulating layer. The active layer, which consists of a suitably doped ZnS powder mixed in a dielectric, is sandwiched between two electrodes; one of which are ITO film and the other is aluminum. In this paper, three kinds of powder eleotroluminescent devices (PELDs) : WK-A(ITO/BaTiO$_3$/ZnS:Cu/Silver paste). WK-B(ITO/BaTiO$_3$+ZnS:Cu/Silver paste) and WK-C(ITO/BaTiO$_3$/ZnS:Cu/BaTiO$_3$/Silver paste), fabricated by spin coating method, were investigated. To evaluate the luminescence properties of three kinds of PELDs, EL emission spectroscopy, transferred charge density and time response of EL emission intensity under square wave voltage driving were measured.

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New data on Phase Relations in the System Cu-Fe-Sn-S (4성분계 Cu-Fe-Sn-S의 상관관계에 대한 새로운 데이터)

  • Jang, Young-Nam;Moh, Guenter
    • Journal of the Mineralogical Society of Korea
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    • v.4 no.1
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    • pp.43-50
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    • 1991
  • Two solid solution-type phases has been experimentally found in the quaternary system Cu-Fe-Sn-S:$(Fe, Cu, Sn)_{1+x}$ and $Cu_{2-x}Fe_(1+x}SnS_4$. These solid solutions are stable around the CuS-FeS-SnS referecne plane in the composition tetrahedron. One is the sphalerite-type monosulfide solid solution which has a extensive stability range with varying degrees of sulfur/metal ratio 9.7-1.0/1.0. The other is tetrahedrite-type phase $Cu_{2-y)Fe_{1+y}SnS_4(y_{max}=0.4)$ which is stable along the $Cu_2FeSnS_4-FeS$ tie line, but shows no phase transformation in the subsolidus range and decomposes incongruently at the range of 835-862${\circ}C$, depending on the compositional variation. Particularly, the latter phase shows the characteristic superstructure reflections, indicating that it is a derivative of sphalerite structure. The stability field of these two sphalerite-type phases are defined on the basis of diffraction pattern and optical homogeneity of the synthetic materials at the temperature range of 700-400${\circ}C$.

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Structural and Optical Properties of CuS Thin Films Grown by RF Magnetron Sputtering (RF 마그네트론 스퍼터링법으로 성장시킨 CuS 박막의 구조적 및 광학적 특성)

  • Shin, Donghyeok;Lee, SangWoon;Son, Chang Sik;Son, Young Guk;Hwang, Donghyun
    • Journal of the Korean institute of surface engineering
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    • v.53 no.1
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    • pp.9-14
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    • 2020
  • CuS (copper sulfide) thin films having the same thickness of 100nm were deposited on the glass substrates using by radio frequency (RF) magnetron sputtering method. RF powers were applied as a process variable for the growth of CuS thin films. The structural and optical properties of CuS thin films deposited under different power conditions (40-100W) were studied. XRD analysis revealed that all CuS thin films had hexagonal crystal structure with the preferential growth of (110) planes. As the sputtering power increased, the relative intensity of the peak with respect to the (110) planes decreased. The peaks of the two bands (264cm-1 and 474cm-1) indicated in the Raman spectrum exactly matched the typical spectral values of the covellite (CuS). The size and shape of the grains constituting the surface of the CuS thin films deposited under the power condition ranging from 40W to 80W hardly changed. However, the spacing between crystal grains tended to increase in proportion to the increase in sputtering power. The maximum transmittance of CuS thin films grown at 40W to 80W ranged from 50 % to 51 % based on 580nm wavelength, and showed a relatively small decrease of 48% at 100W. The band gap energy of the CuS thin films decreased from 2.62eV (at 40W) to 2.56eV (at 100W) as the sputtering power increased.

SEL 법으로 제조된 $CuInS_2$ 화합물 반도체 박막의 전기적 특성

  • Park, Gye-Choon;Jeong, Woon-Jo;Kim, Jong-Uk
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1605-1608
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    • 2004
  • Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2{\theta}$) of 27.7$^{\circ}$ was well made by SEL method at annealing temperature of 250 $^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when Cu/In composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). And lattice constant a and grain size of the thin film in S ambience were appeared a little larger than those in only vacuum. The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}$m respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.

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Effects of Sputter Deposition Sequence and Sulfurization Process of Cu, Zn, Sn on Properties of Cu2ZnSnS4 Solar Cell Material (Cu, Zn, Sn의 스퍼터링 적층방법과 황화 열처리공정이 Cu2ZnSnS4 태양전지재료 특성에 미치는 효과)

  • Park, Nam-Kyu;Arepalli, Vinaya Kumar;Kim, Eui-Tae
    • Korean Journal of Materials Research
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    • v.23 no.6
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    • pp.304-308
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    • 2013
  • The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of $Cu_2ZnSnS_4$ (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/$SiO_2$/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at $500^{\circ}C$ in a $H_2S$ gas environment. $H_2S$ (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.

Structural and Optical Properties of CuInS2 Thin Films Fabricated by Electron-beam Evaporation

  • Jeong, Woon-Jo;Park, Gye-Choon;Chung, Hae-Duck
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.1
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    • pp.7-10
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    • 2003
  • Single phase CuInS$_2$ thin film with the strongest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second strongest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$was well made with chalcopyrite structure at substrate temperature of 70$^{\circ}C$. annealing temperature of 250$^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 Um when the Cu/In composition ratio of 1.03, where the lattice constant of a and c were 5.60${\AA}$ and 11.12${\AA}$, respectively. The Cu/In stoichiometry of the single-phase CuInS$_2$thin films was from 0.84 to 1.3. The film was p-type when tile Cu/In ratio was above 0.99 and was n-type when the Cu/In was below 0.95. The fundamental absorption wavelength, absorption coefficient and optical band gap of p-type CuInS$_2$ thin film with Cu/In=1.3 were 837nm, 3.OH 104 cm-1 and 1.48 eV, respectively. The fundamental absorption wavelength absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film with Cu/In=0.84 were 821 nm, 6.0${\times}$10$^4$cm$\^$-1/ and 1.51 eV, respectively.

Effect of Cu-contained solders on shear strength of BGA solder joints

  • Shin, Chang-Keun;Huh, Joo-Youl
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2000.04a
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    • pp.73-73
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    • 2000
  • Shear strength of BGA solder joints on Cu pad was studied for Cu-contained Sn n.5 a and 2.5wt.% Cu) and Sn-Pb (o.5wt.% Cu) solders, with emphasis on the roles of the C Cu-Sn intermetallic layer thickness and the roughness of the interface between the i intermetallic layer and solder. The shear strength test was performed both for a as-soldered s이der joints with soldering reaction times of 1, 2, 4 min and for aged s이der j joints at 170 C up to 16 days. The Cu addition to both pure Sn and eutectic Sn-Pb s solders increased the intermetallic layer thickness at both soldering and aging t temperatures. The Cu addition also resulted in changes in the roughness of the interface b between the intermetallic layer and solder at as-soldered states. With increasing Cu c content. the interface roughened for Sn-Cu solders whereas it flattened for Sn-Pb-Cu s solders. The shear fractures in all solder joints investigated were confined in the bulk s solder rather than through the intermetallic layer. Therefore, the effect of Cu content in s solders on the shear strength of the solder joints was primarily attributed to its i influence on the micros$\sigma$ucture of bulk solder, such as the size and spatial distributions of CU6Sn5 precipitates. In addition, the critical intermetallic layer thickness for a m maximum shear strength seemed to depend on the Cu content in bulk solder.older.

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