• Proceedings of the KWS Conference
• /
• 2006.10a
• /
• pp.181-183
• /
• 2006

This paper studies the mechanical behaviors of Sn-3.5Ag solder joint against substrate(such as Au/Ni/Cu, Au/cu, Ni/Cu and Cu pad) after induction heating, a new soldering method. It was found that the solder bump formation depends on the time and current of the induction heating system. Also the heating value of the solder bump were found to vary with respect to the thermal conductivity of the pads on the substrate. In case of Au/Ni/Cu pad and Au/Cu pad, solder bump's shear strength were high for the heating time of $1.5{\sim}2sec$. For Ni/Cu pad, solder bump's shear strength were found to increase with time increment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.535-538
• /
• 2000

We have investigated the photoinduced anisotropy in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin films, non-doped and photodoped by Ag and Cu. The films were exposed by the linearly polarized He-Ne laser light( $\lambda$=632.8nm). The Ag and Cu photodoping resulted in reducing the time of saturation photoinduced linearly dichroism. Also photoinduced linearly dichroism was increased up to maximum 184% by Ag photodoping and 138% by Cu photodoping, respectively. As the result of this study, the linearly dichroism can be interesting for different applications of photoinduced anisotropy. In addition, it will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

• Journal of the Korean Magnetic Resonance Society
• /
• v.8 no.2
• /
• pp.86-95
• /
• 2004

A Cu(I) complex with an asymmetric TTF derivative (CET-EDTTTF) is prepared from the slow-diffusion method using CET-EDTTTF and Cu(I)Br solutions and characterized by X-ray crystallography and EPR spectroscopy. Structural analysis shows Cu(I) ions are tetrahedrally coordinated to two bridging bromides, one terminal bromide, and one S atom from CET-EDTTTF. Detailed geometrical and EPR analysis identified that the dimmer molecule contains [Cu$_2Br_4]^{2-}$ anion between two [CET-EDTTTF]$^+$ radical cations. Single-crystal EPR investigation of the complex reveals that the ganisotropy is unusually big, compared to those of the previously reported TTF+ cation radicals, implying that there is significant contribution of the Cu d-orbital to the HOMO of the complex.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.3
• /
• pp.494-503
• /
• 1997

We investigated the initial stages of formation of the Cu/polyimide interface using another two methods by X-ray photoelectron spectroscopy. : One, in-situ measurement with increasing of Cu deposition thickness onto polyimide(PI), the other, measurement with decreasing of Cu thickness of Cu/pI film by $Ar^+$ ion etching. From these results, we find that the chemical reactions exist in Cu/PI interface. However, the measured chemical reactions were different according to experimental method.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.43 no.5
• /
• pp.795-801
• /
• 1994

The BiPbSrCaCuO superconductor was fabricated by diffusion of The dual layer composed of SrS12TCaS11TCuS12TOS1xT in upper layer and BiS12TPbSI0.3TCuS12TOS1yT in lower layer, and varified growh-mechanism of BiPbSrCaCuO superconducting phase. And, we produced optimum conditions of spread volume and each stage of sintering time were upper layer:Lower layer=1:0.2, 1:0.4, 1:0.6 and 24hr., 120hr., 210hr. From the result, the optimum conditions are spread volume(Upper layer:Lower layer=1:0.6), sintering time(210hrs.) at 820$^{\circ}C$.The BiPbSrCaCuO superconductor, fabricated optimum condition, showed zero resistance at critical temperature of 70k.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.286-289
• /
• 2001

Single phase CuGaS$_2$ thin film with the highest diffraction peak of (112) at diffraction angle (2$\theta$) of 28.8$^{\circ}$ was made at substrate temperature of 7$0^{\circ}C$, annealing temperature of 35$0^{\circ}C$ and annealing time of 60 min. And second highest (204) peak was shown at diffraction angle (2$\theta$) of 49.1$^{\circ}$. Lattice constant of a and c of that CuGaS$_2$ thin film was 5.37 $\AA$ and 10.54 $\AA$ respectively. The greatest grain size of the thin film was about 1${\mu}{\textrm}{m}$. The (112) peak of single phase of CuGaS$_2$ thin film at annealing temperature of 35$0^{\circ}C$ with excess S supply was appeared with a little higher about 10 % than that of no exces S supply And the resistivity, mobility and hole density at room temperature of p-type CuGaS$_2$ thin film with best crystalline was 1.4 $\Omega$cm, 15 cm2/V . sec and 2.9$\times$10$^{17}$ cm$^{-3}$ respectively. It was known that carrier concentration had considerable effect than mobility on variety of resistivity of the fabricated CuGaS$_2$ thin film, and the polycrystalline CuGaS$_2$ thin films were made at these conditions were all p-type.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.467-468
• /
• 2009

For the manufacture of the $CuGaS_2$, Cu, Ga and S were vapor-deposited in the named order. Among them, Cu and Ga were vapor-deposited by using the Evaporation method in consideration of their adhesive force to the substrate so that the composition of Cu and Ga might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from R.T.[$^{\circ}C$] to $150[^{\circ}C$] at intervals of 50[$^{\circ}C$]. As a result, at 300[$^{\circ}C$]of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known from this experimental result that it is the optimum condition to conduct Annealing on the $CuGaS_2$ thin film under a vacuum when the $CuGaS_2$ thin film as an optical absorption layer material for a solar cell is manufactured.

• Journal of the Korean institute of surface engineering
• /
• v.48 no.4
• /
• pp.169-173
• /
• 2015

$CuInSe_2$ thin films which have been widely used for thin solar cells as a light absorber were prepared by hydrazine solution processing, and their microstructural properties were investigated. Hydrazine $CuInSe_2$ precursor solutions were prepared by dissolving $Cu_2S$, S, $In_2Se_3$ and Se powder in hydrazine solvent. Multilayer $CuInSe_2$ chalcopyrite phase thin films were prepared by repeating spin-coating process using the precursor solution. Unfortunately, the presence of the interfaces between each $CuInSe_2$ layer formed by multi-layer coating impeded grain growth across the interface. Here, by doing simple interface engineering to solve the limited grain growth issue, the large grained (${\sim}1{\mu}m$) $CuInSe_2$ thin films were obtained.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1537-1538
• /
• 2007

ZnS:Cu,Cl phosphor was synthesized by solid-liquid state reaction with two firing steps. Each stage of the process was carefully monitored so that the final product was comparable to commercially-available phosphor. The effect of $Cu^{2+}-doping$ concentration has been investigated on the luminescence characteristics of ZnS:Cu,Cl blue-green phosphors for inorganic electroluminescent device.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.1
• /
• pp.20-24
• /
• 2015

We studied the relationship between the surface smoothness of the internal Cu ribbon and the morphology of the Sn-Pb plating layer for solar cell modules. A bumpy surface was observed on the surface of the solar ribbon, which caused irregular reflection of light. Large, Pb-rich, primary ${\alpha}$-phases were found below the convex surface of the solar ribbon, passing from the surface of the internal Cu ribbon to the surface of the plating layer. The primary ${\alpha}$-phases heterogeneously nucleated on the convex surface of the Cu ribbon, and then largely grew to the convex surface of the plating layer. The restriction of the primary ${\alpha}$-phase's formation was enabled by enhancing the smoothness of the Cu ribbon's surface; it was also possible to increase the adhesive strength and decrease contact resistance. We confirmed that the solar ribbon's surface smoothness depends on the internal Cu ribbon's surface smoothness.