• 제목/요약/키워드: Cu-Cu Bonding

검색결과 331건 처리시간 0.029초

Cu-Al 판재의 냉간 및 온간 압접에서 낮은 접합강도를 갖는 공정 조건에 관한 연구 (Process Conditions for Low Bonding Strength in Pressure Welding of Cu-Al Plates at Cold and Warm Temperatures)

  • 심경섭;이용신
    • 소성∙가공
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    • 제13권7호
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    • pp.623-628
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    • 2004
  • This paper is concerned with pressure welding, which has been known as a main bonding mechanism during the cold and warm forming such as clad extrusion or bundle extrusion/drawing. Bonding characteristics between the Cu and Al plates by pressure welding are investigated focusing on the weak bonding. Experiments are performed at the cold and warm temperatures ranging from the room temperature to $200^{\circ}C$. The important factors examined in this work are the welding pressure, pressure holding time, surface roughness, and temperature. A bonding map, which can identify the bonding criterion with a weak bonding strength of IMPa , is proposed in terms of welding pressure and surface roughness fur the cold and warm temperature ranges.

Ar-N2 플라즈마가 Cu 표면에 미치는 구조적 특성 분석 (Structural Characteristics of Ar-N2 Plasma Treatment on Cu Surface)

  • 박해성;김사라은경
    • 마이크로전자및패키징학회지
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    • 제25권4호
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    • pp.75-81
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    • 2018
  • Cu-Cu 웨이퍼 본딩 강도를 향상시키기 위한 Cu 박막의 표면처리 기술로 $Ar-N_2$ 플라즈마 처리 공정에 대해 연구하였다. $Ar-N_2$ 플라즈마 처리가 Cu 표면의 구조적 특성에 미치는 영향을 X선 회절분석법, X선 광전자 분광법, 원자간력현미경을 이용하여 분석하였다. Ar 가스는 플라즈마 점화 및 이온 충격에 의한 Cu 표면의 활성화에 사용되고, $N_2$ 가스는 패시베이션(passivation) 층을 형성하여 -O 또는 -OH와 같은 오염으로부터 Cu 표면을 보호하기 위한 목적으로 사용되었다. Ar 분압이 높은 플라즈마로 처리한 시험편은 표면이 활성화되어 공정 이후 더 많은 산화가 진행되었고, $N_2$ 분압이 높은 플라즈마 시험편에서는 Cu-N 및 Cu-O-N과 같은 패시베이션 층과 함께 상대적으로 낮은 수치의 산화도가 관찰되었다. 본 연구에서는 $Ar-N_2$ 플라즈마 처리가 Cu 표면에서 Cu-O 형성 억제 반응에 기여하는 것을 확인할 수 있었으나 추가 연구를 통하여 질소 패시베이션 층이 Cu 웨이퍼 전면에 형성되기 위한 플라즈마 가스 분압 최적화를 진행하고자 한다.

직접압출에 의한 Cu-Al 층상 복합재료 봉의 계면접합 (Interface Bonding of Copper Clad Aluminum Rods by the Direct Extrusion)

  • 김희남;윤여권;강원영;박성훈;이승평
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2000년도 추계학술대회 논문집
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    • pp.437-440
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    • 2000
  • Composite material consists of more than two materials and make various kinds of composite materials by combining different single materials. Copper clad aluminum composite material is composed of Al and Cu, and it has already been put to practical use in Europe because of its economic benefits. This paper presents the interface bonding according to the variation of extrusion ratio and semi-angle die by observing the interface between Cu and Al using metal microscope. By that result, we can predict the conditions of the interface bonding according to the extruding conditions.

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Structure and Bonding of Perovskites A($Cu_{1/3}Nb_{2/3}$)$O_3$ (A=Sr, Ba and Pb) and their Series of Mixed Perovskites

  • Park Hyu-Bum;Huh Hwang;Kim Si-Joong
    • Bulletin of the Korean Chemical Society
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    • 제13권2호
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    • pp.122-127
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    • 1992
  • Some perovskites $A($Cu_{1}3}Nb_{2}3}$)O_3(A=$Sr^{2+}$$, $Ba^{2+}$ and $Pb^{2+}$) and their series of mixed perovskites have been prepared by solid state reaction. Single perovskite phase was obtained in Sr or Ba rich samples, but pyrochlore phase was found in Pb rich samples. The stability of perovskite phase is dependent on the ionicity of bonding as well as the tolerance factor. All the obtained perovskites have tetragonal symmetry distorted by Jahn-Teller effect of $Cu^{2+}$. In the case of $Sr(Cu_{1}3}Nb_{2}3})O_3$, some superlattice lines caused by threefold enlarging of fundamental unit cell were observed. And, the symmetry of B site octahedron and the bonding character of B-O bond have been studied by IR, ESR and diffuse reflection spectroscopy. It appeared that the symmetry and the bonding character are influenced by such factors as the size and the basicity of A cation.

Bonding evolution of bimetallic Al/Cu laminates fabricated by asymmetric roll bonding

  • Vini, Mohamad Heydari;Daneshmand, Saeed
    • Advances in materials Research
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    • 제8권1호
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    • pp.1-10
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    • 2019
  • Roll bonding (RB) process of bi-metal laminates as a new noble method of bonding has been widely used in the production of bimetal laminates. In the present study, asymmetric roll bonding process as a new noble method has been presented to produce Al/Cu bimetallic laminates with the thickness reduction ratios 10%, 20% and 30% together with mismatch rolling diameter ($\frac{R_2}{R_1}$) ratio 1:1, 1:1.1 and 1:1.2. ABAQUS as a finite element simulation software was used to model the deformation of samples. The main attention in this study focuses on the bonding properties of Al/Cu samples. The effect of the $\frac{R_2}{R_1}$ ratios was investigated to improve the bond strength. During the simulation, for samples produced with $\frac{R_2}{R_1}=1:1.2$, the vertical plastic strain of samples was reach the maximum value with a high quality bond. Moreover, the peeling surface of samples after the peeling test was investigated by the scanning electron microscopy (SEM).

표면 요철이 발달된 캐필러리 적용에 따른 Cu 와이어의 본딩 특성 (Enhancement of Cu Wire Bondability by Increasing the Surface Roughness of Capillary)

  • 이종현;김주형;강홍전;김학범;문정탁;류도형
    • 대한금속재료학회지
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    • 제50권12호
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    • pp.913-920
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    • 2012
  • In spite of some problems in processability and bondability, Au wires in the microelectronics industry are gradually being replaced by copper wires to reduce the cost of raw material. In this article, the effects of surface roughness enhanced capillaries on thermosonic Cu wire bonding were evaluated. The roughness-enhanced zirconia toughened alumina (ZTA) capillaries were fabricated via a thermal grooving technique. As a result, the shear bond strength of first bonds (ball bonds) bonded using the roughness-enhanced capillary was enhanced by 15% as compared with that of normal bonds due to more effective plastic deformation and flow of a Cu ball. In the pull-out test of second bonds (stitch bonds), processed at two limit conditions on combinations of process parameters, the bond strength of bonds formed using the roughness-enhanced capillary also resulted in values higher by 55.5% than that of normal bonds because of the increase in the bonding area, indicating the expansion of a processing window for Cu wire bonding. These results suggest that the adoption of roughness-enhanced capillaries is a promising approach for enhancing processability and bondability in Cu wire bonding.

웨이퍼 레벨 3D Integration을 위한 Ti/Cu CMP 공정 연구 (Ti/Cu CMP process for wafer level 3D integration)

  • 김은솔;이민재;김성동;김사라은경
    • 마이크로전자및패키징학회지
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    • 제19권3호
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    • pp.37-41
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    • 2012
  • Cu 본딩을 이용한 웨이퍼 레벨 적층 기술은 고밀도 DRAM 이나 고성능 Logic 소자 적층 또는 이종소자 적층의 핵심 기술로 매우 중요시 되고 있다. Cu 본딩 공정을 최적화하기 위해서는 Cu chemical mechanical polishing(CMP)공정 개발이 필수적이며, 본딩층 평탄화를 위한 중요한 핵심 기술이라 하겠다. 특히 Logic 소자 응용에서는 ultra low-k 유전체와 호환성이 좋은 Ti barrier를 선호하는데, Ti barrier는 전기화학적으로 Cu CMP 슬러리에 영향을 받는 경우가 많다. 본 연구에서는 웨이퍼 레벨 Cu 본딩 기술을 위한 Ti/Cu 배선 구조의 Cu CMP 공정 기술을 연구하였다. 다마싱(damascene) 공정으로 Cu CMP 웨이퍼 시편을 제작하였고, 두 종류의 슬러리를 비교 분석 하였다. Cu 연마율(removal rate)과 슬러리에 대한 $SiO_2$와 Ti barrier의 선택비(selectivity)를 측정하였으며, 라인 폭과 금속 패턴 밀도에 대한 Cu dishing과 oxide erosion을 평가하였다.

B2it 플래시 메모리 카드용 기판의 Ag 범프/Cu 랜드 접합 계면반응 (Interfacial Reaction of Ag Bump/Cu Land Interface for B2it Flash Memory Card Substrate)

  • 홍원식;차상석
    • 마이크로전자및패키징학회지
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    • 제19권1호
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    • pp.67-73
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    • 2012
  • 본 연구는 고밀도 미세회로 형성 및 원가절감에 유리한 페이스트의 인쇄/건조, 프리프레그 관통 및 적층 공법을 이용한 $B^2it$ 공법을 이용하여 FMC 기판을 제조한 후 열적 스트레스에 대한 범프의 계면반응 연구를 수행하였다. 열적 스트레스에 대한 Ag 범프의 접합 신뢰성을 조사하기 위해 열충격시험, 열응력시험을 수행한 후 전기적 특성 및 단면분석을 통해 균열발생 여부를 조사하였다. 또한 Ag 범프와 Cu 랜드의 접합계면에 대한 계면반응 특성을 분석하기 위해 주사전자현미경(SEM), 에너지분산스펙트럼(EDS) 및 FIB분석을 수행하여 계면에서 발생되는 확산반응을 분석하였다. 이러한 결과를 바탕으로 열적 스트레스에 대한 Ag 페이스트 범프/Cu 랜드 접합계면에서 계면반응에 의해 형성된 Ag-Cu 합금층을 확인할 수 있었다. 이러한 합금층은 Cu ${\rightarrow}$ Ag 보다, Ag ${\rightarrow}$ Cu 로의 확산속도가 빠르기 때문에, Cu층에서의 (Ag, Cu) 합금층이 보다 많이 관찰되었으며, 합금층이 Ag범프의 계면 접합력 향상에 기여하는 것을 알 수 있었다.

Characteristics of copper wire wedge bonding

  • Tian, Y.;Zhou, Y.;Mayer, M.;Won, S.J.;Lee, S.M.;Cho, S.Y.;Jung, J.P.
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2005년도 춘계학술발표대회 개요집
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    • pp.34-36
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    • 2005
  • Copper wire bonding is an alternative interconnection technology that serves as a viable and cost saving alternative to gold wire bonding. In this paper, ultrasonic wedge bonding with $25{\mu}m$ copper wire on Au/Ni/Cu metallization of a PCB substrate was performed at ambient temperature. The central composite design of experiment (DOE) approach was applied to optimize the copper wire wedge bonding process parameters. After that, pull test of the wedge bond was performed to study the bond strength and to find the optimum bonding parameters. SEM was used to observe the cross section of the wedge bond. The pull test results show good performance of the wedge bond. Additionally, DOE results gave the optimized parameter for both the first bond and the second bond. Cross section analysis shows a continuous interconnection between the copper wire and Au/Ni/Cu metallization. The diffusion of Cu into the Au layer was also observed.

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