• International Journal of Korean Welding Society
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• v.2 no.2
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• pp.14-18
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• 2002

Titanium and titanium alloy are excellent in corrosion resistance and specific intensity, and also in the biocompatibility. On the other hand, the brazing is bonding method of which productivity and reliability are high, when the complicated and precise structure of the thin plate is constructed. However, though conventional titanium-based brazing filler metal was excellent in bond strength and corrosion resistance, it was disadvantageous that metal structure and mechanical property of the base metal deteriorated, since the brazing temperature ( about $1000^{\circ}C$ ) is considerably high. Authors developed new brazing filler metal which added Zr to Ti-Cu (-Ni) alloy which can be brazed at $900^{\circ}C$ or less about 15 years ago. In this paper, the development of more low-melting-point brazing filler metal was tried by the addition of the fourth elements such as Ni, Co, Cr for the Ti-Zr-Cu alloy. As a method for finding the low-melting-point composition, eutectic composition exploration method was used in order to reduce the experiment point. As the result, several kinds of new brazing filler metal such as 37.5Ti-37.5-Zr-25Cu alloy (melting point: $825^{\circ}C$) and 30Ti-43Zr-25Cu-2Cr alloy (melting point: $825^{\circ}C$) was developed. Then, the brazing joint showed the characteristics which were almost equal to the base metal from the result of obtaining metallic structure and strength of joint of brazing joint. However, the brazing filler metal composition of the melting point of $820^{\circ}C$ or less could not be found. Consequentially, it was clarified that the brazing filler metal developed in this study could be practically sufficiently used from results such as metal structure of brazing joint and tensile test of the joint.

• Journal of Powder Materials
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• v.21 no.3
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• pp.196-201
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• 2014

In this study, nanocrystalline Cu-Ni bulk materials with various compositions were cold compacted by a shock compaction method using a single-stage gas gun system. Since the oxide layers on powder surface disturbs bonding between powder particles during the shock compaction process, each nanopowder was hydrogen-reduced to remove the oxide layers. X-ray peak analysis shows that hydrogen reduction successfully removed the oxide layers from the nano powders. For the shock compaction process, mixed powder samples with various compositions were prepared using a roller mixer. After the shock compaction process, the density of specimens increased up to 95% of the relative density. Longitudinal cross-sections of the shock compacted specimen demonstrates that a boundary between two powders are clearly distinguished and agglomerated powder particles remained in the compacted bulk. Internal crack tended to decrease with an increase in volumetric ratio of nano Cu powders in compacted bulk, showing that nano Cu powders has a higher coherency than nano Ni powders. On the other hand, hardness results are dominated by volume fraction of the nano Ni powder. The crystalline size of the shock compacted bulk materials was greatly reduced from the initial powder crystalline size since the shock wave severely deformed the powders.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.54-56
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• 2005

Ultrasonic soldering using of Si-wafer to FR-4 PCB atroom temperature was investigated. Sn3.5Ag foil rolled $100{\mu}m$ was used for solder. The UBM of Si-die was Cu/ Ni/ Al from top to bottom and its thickness was $0.4{\mu}m$, $0.4{\mu}m$, $0.3{\mu}m$ respectively. Pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom and its thickness was $0.05{\mu}m$, $5{\mu}m$, $18{\mu}m$ respectively. The ultrasonic soldering time was changed from 0.5sec to 3.0sec and its power 1400W. As experimental result, reliable bond joint by ultrasonic at room temperature was obtained. The shear strength increased with soldering time up to 2.5 sec. That means at 2.5sec, the shear strength showed maximum rate of 65.23N. The strength decreased to 33.90N at 3.0 sec because the cracks generated along the intermetallic compound between Si-wafer and Sn-3.5mass%Ag solder. intermetallic compound produced by ultrasonic between the solder and the Si-die was $(Cu, Ni)_{6}Sn_{5}$ and the intermetallic compound between solder and pad on FR-4 was $(Ni, Cu)_{3}Sn_{4}$.

• Bulletin of the Korean Chemical Society
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• v.25 no.6
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• pp.823-828
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• 2004

The crystal structures of sparteinium tetrachlorocuprate monohydrate $[(C_{15}H_{28}N_2)CuCl_4{\cdot}H_2O]$, 1 and sparteinium tetrabromocuprate monohydrate $[(C_{15}H_{28}N_2)CBr_4{\cdot}H_2O]$, 2, were determined. The structures of 1 [orthorhombic, $P2_12_12_1$, a = 8.3080(10) ${\AA}$, b = 14.6797(19) ${\AA}$ and c = 16.4731(17) ${\AA}$], and 2 [orthorhombic, $P2_12_12_1$, a = 8.4769(7) ${\AA}$, b = 15.166(3) ${\AA}$ and c = 16.679(3) ${\AA}$], are composed of a doubly protonated sparteinium cation, $[C_{15}H_{28}N_2]^{2+}$, a discrete $CuX_4^{2-}$ anion $(X=Cl^-\;or\;Br^-)$, and one water molecule. These monomeric compounds are stabilized through various types of hydrogen bonding interaction in their packing structures. Crystal 2 exhibits weak anti-ferromagnetism (J = -3.24 $cm^{-1}$) as opposed to the magnetically isolated paramagnetism observed for 1. The results of comparative magneto-structural investigations of 1 and 2 suggest that the pathway for the weak anti-ferromagnetic super-exchange in 2 might be through a Cu-Br${\cdots}$Br-Cu contact.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.6
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• pp.100-107
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• 2021

As a significant technology in the smartization era promoted by the Fourth Industrial Revolution, the secondary battery industry has recently attracted significant attention. The demand for lithium-ion batteries (LIBs), which exhibit excellent performance, is considerably increasing in different industrial fields. During the manufacturing process of LIBs, it is necessary to join the cathode and anode sheets with thicknesses of several tens of micrometers to lead taps of the cathode and anode with thicknesses of several hundreds of micrometers. Ultrasonic welding exhibits excellent bonding when bonded with very thin plates, such as negative and positive electrodes of LIBs, and dissimilar and highly conductive materials. In addition, ultrasonic welding has a small heat-affected zone. In LIBs, Cu is mainly used as the negative electrode sheet, whereas Cu or Ni is used as the negative electrode tab. In this study, one or two electrode sheets (t0.025 mm Cu) were welded to one lead tab (t0.1 mm Cu). The welding energy and pressure were used as welding parameters to determine the welding strength of the interface between two or three welded materials. Finally, the effects of these welding parameters on the welding strength were investigated.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.101-105
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• 1990

The use of a sol-gel processed cordierite precursor sinterable about$900^{\circ}C$ allows cosintering of the copper and the ceramic. A strong bonding between the copper film and the cordierite substrate can be achieved through an eutectic bonding technique. These interfaces were investigated using STEM. copper diffusion as well as strong chemical and structural modifications was observed in the interface region. Although these interfaces have good adhesion properties, there was no evidence of the formation of the copper compound at the interface.

• Proceedings of the KWS Conference
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• 1996.05a
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• pp.6-9
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• 1996

The Joining of copper rod and zirconia tube was carried out in Ar gas atmosphere. There are two type of the joining. The one is the reaction bond consisting of Cu and zirconia was dominated by surface reaction wi th a undetctable very thin layer. It was found that copper elements were diffused to zirconia side, but that most of Z $r^{4+}$ ions were not diffused to copper side. This result means application of a DC voltage to migrate oxygen to the copper/zirconia interface can oxidize metal at the copper /zirconia interface, and the bonding reaction between zirconia and copper oxide may occur. The other is the reaction bonding was dominated by interdiffusion with a very thick interface layer. This result means application of a DC voltage can reduce zirconia at the interface. The bonding reaction is to be an alloying between Zr and Cr.

• Journal of Korea Foundry Society
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• v.25 no.3
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• pp.134-141
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• 2005

To overcome the undesirable deformation, peeling off and geometrical restrictions which were mainly caused by differences in thermal expansion coefficients during the cladding of aluminum strip and stainless strip, new processing method based on vacuum die casting is designed and implemented in fabricating Al/Fe-17wt%Cr steel(stainless steel). To increase cast-bonding ability, the surface of Fe-17wt%Cr steel is electrochemically etched to have optimum pit size and density. The optimum conditions to generate best pit are as follows: Solution: 1 M $Fecl_{3}$+1 M Nacl, Addition: $CuCl_{2}+HCl$, Current density: 80 $mA/cm^{2}$, Total current: 400 $coulomb/cm^{2}$, AC frequency :60 Hz.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.23-29
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• 2006

Ultrasonic soldering of Si-wafer to FR-4 PCB at ambient temperature was investigated. The UBM of Si-substrate was Cu/ Ni/ Al from top to bottom with thickness of $0.4{\mu}m,\;0.4{\mu}m$, and $0.3{\mu}m$ respectively. The pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom with thickness of $0.05{\mu}m,\;5{\mu}m$, and $18{\mu}m$ respectively. Sn-3.5wt%Ag foil rolled to $100{\mu}m$ was used for solder. The ultrasonic soldering time was varied from 0.5 s to 3.0 s and the ultrasonic power was 1,400 W. The experimental results show that a reliable bond by ultrasonic soldering at ambient temperature was obtained. The shear strength increased with soldering time up to a maximum of 65 N at 2.5 s. The strength decreased to 34 N at 3.0 s because cracks were generated along the intermetallic compound between Si-wafer and Sn-3.5wt%Ag solder. The Intermetallic compound produced by ultrasonic soldering between the Si-wafer and the solder was $(Cu,Ni)_{6}Sn_{5}$.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.61-68
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• 2007

Interfacial fracture energy(${\Gamma}$) between $Al_2O_3$ thin film deposited by Atomic Layer Deposition(ALD) and sputter deposited Cu electrode for embedded PCB applications is measured from a $90^{\circ}$ peel test. While the interfacial fracture energy of $Cu/Al_2O_3$ is very poor, Cr adhesion layer increases the interfacial fracture energy to $39.8{\pm}3.2g/mm\;for\;Ar^+$ RF plasma power density of $0.123W/cm^2$, which seems to come from the enhancement of the mechanical interlocking and Cr-O chemical bonding effects.