• Journal of Welding and Joining
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• 제20권5호
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• pp.72-77
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• 2002

Flip-chip interconnection that uses solder bump is an essential technology to improve the performance of microelectronics which require higher working speed, higher density, and smaller size. In this paper, the shear strength of Cr/Cr-Cu/Cu UBM structure of the high-melting solder b01p and that of low-melting solder bump after aging is evaluated. Observe intermetallic compound and bump joint condition at the interface between solder and UBM by SEM and TEM. And analyze the shear load concentrated to bump applying finite element analysis. As a result of experiment, the maximum shear strength of Sn-97wt%Pb which was treated 900 hrs aging has been decreased as 25% and Sn-37wt%Pb sample has been decreased as 20%. By the aging process, the growth of $Cu_6Sn_5$ and $Cu_3Sn$ is ascertained. And the tendency of crack path movement that is interior of a solder to intermetallic compound interface is found.

• 한국세라믹학회지
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• 제32권5호
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• pp.601-607
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• 1995

The bond strength between the low-firing-substrate and Cu conductor depended on the softening point and the amount of frit added to the metal paste. The addition of 3 wt% frit (softening point: 68$0^{\circ}C$) to the metal paste resulted in the improvement of bond strength, which was approximately 3 times higher (3kg/$\textrm{mm}^2$) than that of non frit condition. It was also found that fracture surface shifted to the ceramic substrate in the interface region. These phenomena were attributed to the frit migration into the metal-ceramic interface. It was thought that the migration of glass frit occurred extensively when the softening point of glass firt was 68$0^{\circ}C$. The sheet resistance of Cu conductor remained constant by the addition of 4 wt% frit regardless of softening point of frit. For all samples with more than 4 wt% frit, the sheet resistance increased abruptly.

• 소성∙가공
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• 제6권2호
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• pp.136-144
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• 1997

(Ag-10%Ni)/Cu clad metals for electric contact switch were fabricated by cold-roll bonding process. 2 or 3 passes of cold-rolling was carried out for each process to investigate the effect of the rolling passes on the bonding property. The effect of the annealing temperature of copper before the cold-roll bonding on the bond strength was also studied. The specimen bonded with copper annealed below 30$0^{\circ}C$ before roll bonding showed good bond strength. This is because high stored energy in copper promoted the short range diffusion and the grain refinement of copper by the static recrystallization increased the degree of the interfacial coherency. The maximum peel strength of clad metals bonded with Cu annealed below 30$0^{\circ}C$ was 120N.

• Journal of Welding and Joining
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• 제7권3호
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• pp.36-43
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• 1989

The furnace brazing in a Ar of copper to martensitic stainless steel(13.5Cr) using Cu-(5~8%)P-(0~8%)Sn powders was investigated. Shear strength, wettability, reacted layer, defect ratio at the stainless steel interface was evaluated. As Sn was added to the Cu-P powders, defect ratio and P content at the stainless steel interface decreased. And also as Sn was added, defect form at the stainless steel interface changed from the continuous layer to the discrete type, and shear strength of the brazed joint increased.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2005년도 춘계학술발표대회 개요집
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• pp.54-56
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• 2005

Ultrasonic soldering using of Si-wafer to FR-4 PCB atroom temperature was investigated. Sn3.5Ag foil rolled $100{\mu}m$ was used for solder. The UBM of Si-die was Cu/ Ni/ Al from top to bottom and its thickness was $0.4{\mu}m$, $0.4{\mu}m$, $0.3{\mu}m$ respectively. Pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom and its thickness was $0.05{\mu}m$, $5{\mu}m$, $18{\mu}m$ respectively. The ultrasonic soldering time was changed from 0.5sec to 3.0sec and its power 1400W. As experimental result, reliable bond joint by ultrasonic at room temperature was obtained. The shear strength increased with soldering time up to 2.5 sec. That means at 2.5sec, the shear strength showed maximum rate of 65.23N. The strength decreased to 33.90N at 3.0 sec because the cracks generated along the intermetallic compound between Si-wafer and Sn-3.5mass%Ag solder. intermetallic compound produced by ultrasonic between the solder and the Si-die was $(Cu, Ni)_{6}Sn_{5}$ and the intermetallic compound between solder and pad on FR-4 was $(Ni, Cu)_{3}Sn_{4}$.

• 대한금속재료학회지
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• 제50권10호
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• pp.775-783
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• 2012

The effect of thermal annealing on the in-situ growth characteristics of intermetallics (IMCs) and the mechanical strength of Cu pillar/Sn-3.5Ag microbumps are systematically investigated. The $Cu_6Sn_5$ phase formed at the Cu/solder interface right after bonding and grew with increased annealing time, while the $Cu_3Sn$ phase formed at the $Cu/Cu_6Sn_5$ interface and grew with increased annealing time. IMC growth followed a linear relationship with the square root of the annealing time due to a diffusion-controlled mechanism. The shear strength measured by the die shear test monotonically increased with annealing time. It then changed the slope with further annealing, which correlated with the change in fracture modes from ductile to brittle at a critical transition time. This is ascribed not only to the increasing thickness of brittle IMCs but also to the decreasing thickness of the solder, as there exists a critical annealing time for a fracture mode transition in our thin solder-capped Cu pillar microbump structures.

• 마이크로전자및패키징학회지
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• 제29권3호
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• pp.63-71
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• 2022

본 연구에서는 Sn-Ag-Cu (SAC)솔더와 electroless nickel autocatalytic gold (ENAG) 표면처리 간 계면반응 및 낙하충격 신뢰성을 연구하였다. ENAG 솔더 접합부의 특성은 다른 Ni계 표면처리인 electroless nickel immersion gold(ENIG)와 electroless nickel electroless palladium immersion gold (ENEPIG)와 비교 평가 하였다. SAC솔더와 Ni계 표면처리 계면에서는 (Cu, Ni)6Sn5 intermetallic compound (IMC)가 형성되었다. IMC 두께는 SAC/ENAG와 SAC/ENEPIG는 1.15 ㎛, 1.12 ㎛로 비슷하였고, SAC/ENIG는 IMC 두께가 2.99 ㎛로 SAC/ENAG보다 2배 정도 높았다. 또한 솔더 접합부의 IMC두께는 무전해 Ni(P) 도금액의 metal turnover (MTO)조건에 영향을 받는 다는 것을 알 수 있었고, MTO가 0에서 3으로 증가하면 IMC두께가 증가함을 알 수 있었다. 전단강도는 SAC/ENEPIG의 접합강도가 가장 높았고, SAC/ENAG, SAC/ENIG 순이었다. 또한, MTO가 증가하면, 전단강도가 낮아짐을 알 수 있었다. 취성파괴도 SAC/ENEPIG가 세가지 접합부 중 가장 낮았으며, SAC/ENAG, SAC/ENIG 순이였고, 마찬가지로 MTO가 증가하면 취성파괴가 높아짐을 알 수 있었다. 낙하충격 시험에서도 0 MTO조건이 3 MTO조건보다 높은 평균파괴횟수를 갖는 것을 확인하였고, 평균파괴횟수도 SAC/ENEPIG, SAC/ENAG, SAC/ENIG순으로 높았다. 낙하 충격 후 파단면을 관찰한 결과 크랙은 IMC와 Ni(P)층 사이에서 진행되었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.251-255
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• 2003

탄화규소 반도체에 대한 오옴성 금속 접촉 성질을 조사하기 위해 3종류의 금속 (Ni, Co, Cu)을 세척한 탄화규소 반도체 위에 직접 증착하여 전기적 성질을 조사 비교하였다. 이들 금속에 대한 오옴성 성질은 금속종류 뿐만 아니라 열처리조건에 대해서도 크게 좌우됨을 알 수 있었다. 열처리는 급속열처리 장치를 이용한 진공상태 및 환원 분위기에서 2-step 방법으로 시행하였다. 접합비 저항은 TLM 구조를 만들었으며 면저항$(R_s)$, 접촉저항$(R_c)$, 이동거리$(L_T)$, 패드간거리(d), 저항$(R_T)$ 값을 구하면 접합비저항$(\rho_c)$ 값을 구하여 알려진 계산식에 의해 추정하였다. 가장 양호한 결과는 Cu 금속에 의한 접촉 결과이었으며 접합비저항$(\rho_c)$은 $1.2\times10^{-6}{\Omega}cm^2$의 낮은 값을 얻을 수 있었다. 열처리는 진공보다 환원분위기에서 수행한 시편이 양호한 전기적 성질을 가짐을 알 수 있었다.

• Journal of Welding and Joining
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• 제31권1호
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• pp.6-10
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• 2013

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년 추계학술발표대회 개요집
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• pp.136-138
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• 2006

Recently a lots of problems have observed in high densified and high integrated electronic components. One of them is ion migration phenomena, which induce the electrical short of electrical circuit. Ion migration phenomena has been observed in the field of exposing the specific environment and using for a long time. Also as the RoHS restriction was started in July 1st, 2006, Pb-free solder was utilized in electronics assemblies. In this case, it is very important to compatible between components and printed circuit board(PCB), thus surface treatment materials of PCB was changed to Sn, Sn-3.0Ag-0.5Cu, Cu. Therefore these new application become to need to reevaluate the sensitivity about electrochemical ion migration. This study was evaluated the occurrence time of electrochemical ion migration using by water drop test. We utilized PCB(printed circuit board) having a comb pattern as follows 0.1, 0.318, 0.5, 1.0 mm pattern distance. Sn-3.0Ag-0.5Cu and Sn-37Pb were electroplated on the comb pattern. 6.5V and 15.0V were applied in the comb pattern and then we measured the electrical short time causing by occurring the ion migration. In these results, we evaluate the sensitivity and derived the prediction models of ion migration occurrence time depending on the pattern materials, applied voltage and pattern spacing of PCB conductor.