• Korean Journal of Materials Research
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• v.23 no.1
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• pp.67-71
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• 2013

Porous $Al_2O_3$ dispersed with nano-sized Cu was fabricated by freeze-drying process and solution chemistry method using Cu-nitrate. To prepare porous $Al_2O_3$, camphene was used as the sublimable vehicle. Camphene slurries with $Al_2O_3$ content of 10 vol% were prepared by milling at $50^{\circ}C$ with a small amount of oligomeric polyester dispersant. Freezing of the slurry was done in a Teflon cylinder attached to a copper bottom plate cooled to $-25^{\circ}C$ while unidirectionally controlling the growth direction of the camphene. Pores were subsequently generated by sublimation of the camphene during drying in air for 48 h. The green body was sintered in a furnace at $1400^{\circ}C$ for 1 h. Cu particles were dispersed in porous $Al_2O_3$ by calcination and hydrogen reduction of Cu-nitrate. The sintered samples showed large pores with sizes of about $150{\mu}m$; these pores were aligned parallel to the camphene growth direction. Also, the internal walls of the large pores had relatively small pores due to the traces of camphene left between the concentrated $Al_2O_3$ particles on the internal wall. EDS analysis revealed that the Cu particles were mainly dispersed on the surfaces of the large pores. These results strongly suggest that porous $Al_2O_3$ with Cu dispersion can be successfully fabricated by freeze-drying and solution chemistry routes.

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.156-162
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• 2017

CuO(x)/0.3Al-0.7Ce catalysts with different CuO loadings (x = 2~20 wt%) were prepared by impregnation method and investigated the effects of CuO loadings on the low temperature CO oxidation. Of the used catalysts, the CuO(10)/0.3Al-0.7Ce catalyst showed the highest catalytic performance in the absence or presence of water vapor. In the presence of water vapor, the catalytic performance was drastically decreased, with a temperature of 50% CO conversion ($T_{50%}$) shifted to higher temperature by $50^{\circ}C$ compared to the those in dry conditions because of the competitive adsorption of water vapor on the active sites. The copper metal surface area calculated from $N_2O$-titration analysis and the oxygen capacity from CO-pulse experiments were increased with the CuO loadings and showed a maximum at 10 wt%CuO/0.3Al-0.7Ce catalyst. These trends are in good agreement with the tendency of $T_{50%}$ of the catalysts. From these characteristic aspects, it could be deduced that the catalytic performance was closely related to the oxygen capacity and the copper metallic surface area.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.675-678
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• 2004

[ $CuAlO_2$ ] was used as P-type transparent conducting oxide. $CuAlO_2$ ceramics was obtained from heating a stoichiometric mixture of $Cu_2O$ and $Al_2OH_3$ at $1200^{\circ}C$ for 6h. $CuAlO_2$ ceramics were doped by the rate of 0, 5, 7 and 10% of the $BeSO_4{\cdot}4H_2O$. Sintered ceramics were investigated by X-ray diffraction (XRD) and electrical measurements. The room temperature conductivity of the ceramics, which were doped with $BeSO_4{\cdot}4H_2O$ 5wt% was of the order of $3.19\times10^{-3}S\;cm^{-1}$, and the density was $4.98g/cm^3$. Therefor the conductivity and density in $BeSO+4{\cdot}4H_2O$ 5wt% were better than other cases. Additionally, Seebeck cofficient measurements revealed that these ceramics were p-type semiconductors and the ceramic conductivity increased with the growth temperature.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.3
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• pp.149-154
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• 2009

Dense $5Cu_{0.6}Fe_{0.4}-Al_2O_3$ composite was consolidated from mechanically synthesized powders by pulsed current activated sintering method within 1 min. $5Cu_{0.6}Fe_{0.4}-Al_2O_3$ powder was synthesized from 3CuO and 2FeAI using the high energy ball milling. Dense $5Cu_{0.6}Fe_{0.4}-Al_2O_3$ with relative density of up to 95% was produced under simultaneous application of a 80 MPa pressure and the pulsed current. Mechanical properties and grain size of the composite were investigated.

• Korean Journal of Materials Research
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• v.31 no.11
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• pp.642-648
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• 2021

The precipitation effect of Al-6%Si-0.4%Mg-0.9%Cu-(Ti) alloy (in wt.%) after various heat treatments was studied using a laser flash device (LFA) and differential scanning calorimetry (DSC). Solid solution treatment was performed at 535 ℃ for 6 h, followed by water cooling, and samples were artificially aged in air at 180 ℃ and 220 ℃ for 5 h. The titanium-free alloy Al-6%Si-0.4%Mg-0.9%Cu showed higher thermal diffusivity than did the Al-6%Si-0.4%Mg-0.9%Cu-0.2%Ti alloy over the entire temperature range. In the temperature ranges below 200 ℃ and above 300 ℃, the value of thermal diffusivity decreased with increasing temperature. As the sample temperature increased between 200 ℃ and 400 ℃, phase precipitation occurred. From the results of DSC analysis, the temperature dependence of the change in thermal diffusivity in the temperature range between 200 ℃ and 400 ℃ was strongly influenced by the precipitation of θ'-Al₂Cu, β'-Mg₂Si, and Si phases. The most important factor in the temperature dependence of thermal diffusivity was Si precipitation.

• Journal of Powder Materials
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• v.30 no.4
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• pp.339-345
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• 2023

This study investigates the melting point and brazing properties of the aluminum (Al)-copper (Cu)-silicon (Si)-tin (Sn) alloy fabricated for low-temperature brazing based on the alloy design. Specifically, the Al-20Cu-10Si-Sn alloy is examined and confirmed to possess a melting point of approximately 520℃. Analysis of the melting point of the alloy based on composition reveals that the melting temperature tends to decrease with increasing Cu and Si content, along with a corresponding decrease as the Sn content rises. This study verifies that the Al-20Cu-10Si-5Sn alloy exhibits high liquidity and favorable mechanical properties for brazing through the joint gap filling test and Vickers hardness measurements. Additionally, a powder fabricated using the Al-20Cu-10Si-5Sn alloy demonstrates a melting point of around 515℃ following melting point analysis. Consequently, it is deemed highly suitable for use as a low-temperature Al brazing material.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.49-55
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• 2016

The effects of post-annealing and temperature/humidity conditions on the interfacial adhesion energies of atomic layer deposited RuAlO diffusion barrier layer for Cu interconnects were systematically investigated. The initial interfacial adhesion energy measured by four-point bending test was $7.60J/m^2$. The interfacial adhesion energy decreased to $5.65J/m^2$ after 500 hrs at $85^{\circ}C$/85% T/H condition, while it increased to $24.05J/m^2$ after annealing at $200^{\circ}C$ for 500 hrs. The X-ray photoemission spectroscopy (XPS) analysis showed that delaminated interface was RuAlO/$SiO_2$ for as-bonded and T/H conditions, while it was Cu/RuAlO for post-annealing condition. XPS O1s peak separation results revealed that the effective generation of strong Al-O-Si bonds between $AlO_x$ and $SiO_2$ interface at optimum post-annealing conditions is responsible for enhanced interfacial adhesion energies between RuAlO/$SiO_2$ interface, which would lead to good electrical and mechanical reliabilities of atomic layer deposited RuAlO diffusion barrier for advanced Cu interconnects.

• Journal of Welding and Joining
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• v.15 no.6
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• pp.96-104
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• 1997

The present study was aimed to correlate the microstructure and the hardness as well as the wear resistance of the metal-ceramic particulated composite layer on the pure Al plate. The composite layers were constructed by the addition of TiC particles on the surface of Al-Cu alloyed layers by PTA overlaying process. Initially, the Al-Cu alloyed layers were achieved by the deposition of Al-(25 ~ 48%) Cu alloys on the pure Al plate by TIG process. It was revealed that TiC particles were uniformly dispersed without any reaction with matrix in the composite layer. The volume fraction of TiC particles (TiC V F) increased from 12% to 55% with increasing the number of pass of composite layer. Hardnesses of (Al-48%Cu + TiC (3&4layers)) composite layer were Hv450 and Hv560, respectively, due to the increase of TiC V/F. Hardnesses of (Al-Cu + TiC) composite layers decreased gradually with insreasing temperature from 100$^{\circ}$C to 400$^{\circ}$C, and hardnesses at 400$^{\circ}$C were then reached to 1/5 - 1/10 of room temperature hardness depending on the construction of composite layers. The Specific wear of (Al + Tic) layer and Al-48%Cu alloyed layer decreased to 1/10 of the of pure Al, while the specific wear of (Al-48%Cu + TiC (4 layers)) composite layer exhibited 1/15 of that of steel such as SS400 and STS304.

• Korean Journal of Metals and Materials
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• v.46 no.6
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• pp.338-344
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• 2008

The crystallization kinetics of the $Cu_{43}Zr_{43}Al_7Be_7$ bulk metallic glass were studied by differential scanning calorimetry(DSC) in the continuous heating and isothermal annealing modes. Only one major peak could be detected on the DSC traces of $Cu_{43}Zr_{43}Al_7Be_7$ bulk amorphous alloy, and the activation energy for crystallization corresponding to the peak determined by the Kissinger method was resulted of 239 kJ/mol. The isothermal kinetic, analyzed by the Johnson-Mehl-Avrami equation yielded values for the Avrami exponents in the range 1.69 to 2.37, which implied a crystallization governed by a three-dimensioned growth. Primary phases were essentially the cubic structure CuZr together with the $Cu_{10}Zr_7$ phase. At higher temperature, the CuZr disappeared while the $Cu_{10}Zr_7$ became predominant. After long term annealing at 731 K, the phases were $Cu_{10}Zr_7$, $Cu_2ZrAl$ and $Al_3Zr_5$.