• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.2
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• pp.225-231
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• 2012

Drop simulations of the board level in the flip chips with solder joints have been highlighted for years, recently. Also, through the study on the life prediction of thermal fatigue in the flip chips considering underfill, its importance has been issued greatly. In this paper, dynamic analysis using the implicit method in the Finite Element Analysis (FEA) is carried out to assess the factors effecting on flip chips considering underfill. The design parameters are size and thickness of chip, and size, pitch and array of solder ball with composition of Sn1.0Ag0.5Cu. The board systems by JEDEC standard is modeled with various design parameter combinations, and through these simulations, maximum yield stress and strain at each chip are shown at the solder balls. Modal analysis is simulated to find out the relation between drop impact and vibration of the board system.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.114-118
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• 2016

$Cu_{1.8}Zn_{1.2}(Sn_{1-x}Ge_x)S_4$ (CZTGeS) nanocrystals were mechanochemically synthesized from elemental precursor powders without using any organic solvents and any additives. The composition of CZTGeS nanocrystals were systematically varied with different Ge mole fraction (x) from 0.1 to 0.9. The XRD, Raman spectroscopy, high-resolution TEM, and diffuse reflectance studies show that the as-synthesized CZTGeS nanocrystals exhibited consistent changes in various structural and optical properties as a function of x, such as lattice parameters, wave numbers for $A_1$ Raman vibration mode, interplanar distances (d-spacing), and optical bandgap energies. The bandgap energy of the synthesized CZTGeS nanocrystals gradually increases from 1.40 to 1.61 eV with increasing x from 0.1 to 0.9, demonstrating that Ge-doping is useful means to tune the bandgap of mechanochemically synthesized nanocrystals-based kesterite thin-film solar cells. The preliminary solar cell performance is presented with an efficiency of 3.66%.

• Journal of Korea Foundry Society
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• v.32 no.2
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• pp.91-97
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• 2012

The effects of Bi and Sb additions on the microstructures and casting properties in lead-free Cu-Zn-Sn broze were investigated. (1) When only Bi was added to the bronze, Bi was precipitated on the ${\delta}$ phase of ${\alpha}$ dendrite cell boundary. When Bi and Sb were added together, Bi was precipitated on the ${\delta}_A$ which was the Sb-rich area in the ${\delta}$ phase. (2) The addition of Sb accelerated the formation of ${\delta}$ phase, and when Sb, Bi and Pb were added, Bi and Pb were precipitated as mixed solution in the ${\delta}_A$ phase. (3) The combined addition of Sb and Bi resulted in the suppression of shrinkage due to the complementary effects of the mass feeding of ${\alpha}$-dendrite cluster covered with ${\delta}$ phase and sealing of micro-shrinkage in the ${\delta}$ phase by solidification expansion of Bi.

• Journal of Korea Foundry Society
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• v.10 no.3
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• pp.219-224
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• 1990

In this, we have investigated the solute behavior in front of solid-liquid interface according to the change of the cooling rate in bronze alloy and phosphor bronze alloy. The conclusive summary is as follows: 1) The secondary dendrite arm spacing was decreased with increasing the cooling rate. 2) The minimum solute concentration happened to along centerline of primary arm, and the maximum solute concentration was found at the boundary of arm or between the arms the minimum solute concentration was increased with the cooling rate. 3) Segregation Index S was decreased with increasing the cooling rate and content of P. 4) The degree of the microsegregation was decreased with increasing the cooling rate. The effective distribution coefficient, Ke was increased with addition of P in Cu-Sn.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.708-712
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• 2015

This study reports the effects of $H_2S$ gas concentration on the properties of $Cu_2ZnSnS_4(CZTS)$ thin films. Specifically, sulfurization process with low $H_2S$ concentrations of 0.05% and 0.1%, along with 5% $H_2S$ gas, was studied. CZTS films were directly synthesized on Mo/Si substrates by chemical bath deposition method using copper sulfate, zinc sulfate heptahydrate, tin chloride dihydrate, and sodium thiosulfate pentahydrate. Smooth CZTS films were grown on substrates at optimized chemical bath deposition condition. The CZTS films sulfurized at low $H_2S$ concentrations of 0.05 % and 0.1% showed very rough and porous film morphology, whereas the film sulfurized at 5% $H_2S$ yielded a very smooth and dense film morphology. The CZTS films were fully crystallized in kesterite crystal form when they were sulfurized at $500^{\circ}C$ for 1 h. The kesterite CZTS film showed a reasonably good room-temperature photoluminescence spectrum that peaked in a range of 1.4 eV to 1.5 eV, consistent with the optimal bandgap for CZTS solar cell applications.

• Journal of Welding and Joining
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• v.29 no.5
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• pp.95-98
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• 2011

Recently, there is a growing tendency that fine-pitch electronic devices are increased due to higher density and very large scale integration. Finer pitch printed circuit board(PCB) is to be decrease insulation resistance between circuit patterns and electrical components, which will induce to electrical short in electronic circuit by electrochemical migration when it exposes to long term in high temperature and high humidity. In this research, the effect of soldering flux acting as an electrical carrier between conductors on electrochemical migration was investigated. The PCB pad was coated with OSP finish. Sn3.0Ag0.5Cu solder paste was printed on the PCB circuit and then the coupon was treated by reflow process. Thereby, specimen for ion migration test was fabricated. Electrochemical migration test was conducted under the condition of DC 48 V, $85^{\circ}C$, and 85 % relative humidity. Their life time could be increased about 22% by means of removal of flux. The fundamentals and mechanism of electrochemical migration was discussed depending on the existence of flux residues after reflow process.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.978-984
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• 1999

ZrNbFeCu-xSn 합금을 진공 아크 용해법으로 제조하여 $360^{\circ}C$의 물, $400^{\circ}C$의 수증기 및 36$0^{\circ}C$의 70ppm LiOH 분위기에서 부식실험을 실시하였으며, 시편의 미세구조는 광학현미경, SEM 및 TEM으로 관찰하였다. 36$0^{\circ}C$에서 210일까지 부식 실험한 결과 대부분의 합금이 천이 전 영역에서의 부식거동을 보였다. $400^{\circ}C$ 경우, 초기에는$ 360^{\circ}C$에서의 부식거동과 비슷한 경향을 보였으나 80일 이후부터는 천이현상이 발생하여 부식속도가 급격히 증가하는 경향을 나타내었는데, Sn량이 많을수록 보다 빠른 시간에 천이현상이 발생했다. LiOH 용액에서는 전반적으로 $400^{\circ}C$에서 보다 더 늦은 시간에 천이현상이 발생했다. 석출물은 Zr(Fe,Cu)$_2$나Zr(Fe,Cu)$_3$로 추정되는 성분을 가지지만, Sn의 증가에 따라 석출물의 조성이나 크기는 거의 변화가 없는 것으로 관찰되었다.

• Journal of Korea Foundry Society
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• v.34 no.2
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• pp.49-53
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• 2014

In commercial Zr-Nb-Cu-Ni-Al amorphous alloys, expensive element, Zr, was substituted to Sn which was cheaper one, and then, glass forming ability, compressive strength and hardness of them were estimated. Even though the Sn was added up to 1.5%, resulting phase was not changed to the crystalline form. It was confirmed by X-ray diffraction and thermal analyses. In the X-ray profiles, there were no peaks for crystalline phases and typical halo pattern for amorphous phase was appeared at the diffraction angle of $35^{\circ}{\sim}45^{\circ}$. Thermal analyses also showed that the Sn modified alloys were corresponded to the amorphous standards where ${\delta}T$(= Tx - Tg) and Trg(= Tg/Tm) affecting to the amorphous forming ability were more than 50K and 0.60 respectively. Compressive strengths were 1.77 GPa, 1.63 GPa, 1.65 GPa and 1.77 GPa for 0%Sn, 0.5%Sn, 1.0%Sn and 1.5%Sn respectively. Hardnesses of the Sn modified alloys were decreased from 752 Hv to 702 Hv in 1.0%Sn and recovered to 746 Hv in 1.5%Sn.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.1
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• pp.117-123
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• 2015

The need for drop simulations for board-leveled flip chips in micro-system packaging has been increasing. There have been many studies on flip chips with various solder ball compositions. However, studies on flip chips with Sn-1.0Ag-0.5Cu and Sn-3.0Ag-0.5Cu have rarely been attempted because of the unknown material properties. According to recent studies, drop simulations with these solder ball compositions have proven feasible. In this study, predictions of the impact lifetime by drop simulations are performed considering Cu and Cu/Ni UBMs using LS-DYNA to alter the design parameters of the flip chips, such as thickness of the flip chip and size of the solder ball. It was found that a smaller chip thickness, larger solder ball diameter, and using the Cu/Ni UBM can improve the drop lifetime of solder balls.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.77-85
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• 2004

To evaluate the effect of plasma cleaning on the soldering reliability the plasma cleaning using Ar-10vol%$H_2$ gas was applied on a UBM(Under Bump Metallization). The UBM consisted of Au/ Cu/ Ni/ Al layers which were deposited on a Si-wafer with 20 nm/ 4 $\mu\textrm{m}$/ 4 $\mu\textrm{m}$/ 0.4 $\mu\textrm{m}$ thickness respectively. Sn-3.5%Ag, Sn-3.5%Ag-0.7%Cu and Sn-37%Pb solder balls sized of 500 $\mu\textrm{m}$ in diameter were used. Solder balls on the UBM were plasma reflowed under Ar-10%$H_2$ plasma (with or without plasma cleaning). They were compared with air reflowed solder balls with flux. The spreading ratios of plasma reflowed solder with plasma cleaning was 20-40% higher than that of plasma reflowed solder without plasma cleaning. The shear strength of plasma reflowed solder with plasma cleaning was about 58-65MPa. It showed 60-80% higher than that of plasma reflowed solder without plasma cleaning and 15-35% higher than that of air reflowed solder. Thus it was believed that plasma cleaning for the UBM using Ar-10vol%$H_2$ gas was considerably effective for the improvement of the strength of solder ball.