• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.2
• /
• pp.25-30
• /
• 2018

Sn-Pb solder has been used in automotive electronics for decades. However, recently, due to the environmental and health concerns, some international environmental organizations such as the end-of-life vehicle (ELV) enacted legislation banning of the Pb usage in automotive electronics. For this reason, many studies to develop and promote Pb-free soldering have been significantly reported. Meanwhile, because of flexibility and lightweight, flexible printed circuit boards (FPCBs) have been increasingly used in automotive electronics for lightweight to improve fuel efficiency and space utilization. Although the properties of lead-free solders for automotive electronics have been widely studied, there is a lack of research on the reliability performance of the lead-free solder joint on FPCB under user conditions. This study reported the properties of solder joints between Pb-free solders such as Sn3.0Ag0.5Cu, Sn0.7Cu and Sn0.5Cu0.01Al (Si), and various FPCBs finished with organic solderability preservative (OSP) and electroless nickel immersion gold (ENIG). To evaluate on joint properties and reliabilities with different solder compositions and surface-finishing materials, pull strength test, thermal shock test, and bending cycle test were performed and analyzed. After the bending cycle test of solder joint on OSP-finishing, the fractures were occurred in solder and the lifetime of Sn3.0Ag0.5Cu solder joint was the longest.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.1
• /
• pp.55-62
• /
• 2023

In this study, Sn-3.0Ag-0.5Cu (wt.%, SAC305) solder dipping process was performed between Ni-foam skeleton with different pore per inch (PPI) to fabricate Ni-foam/SAC305 composite solder, and then applied to the transient liquid phase (TLP) bonding process to evaluate the microstructure and mechanical properties of the bonded joint. The Ni-foam/SAC305 composite solder preform consisted of Ni-foam and SAC305, and an intermetallic compound (IMC) having a (Ni,Cu)₃Sn₄ composition was formed at the Ni-foam interface. During TLP bonding process, the IMC at the Ni-foam interface was converted to (Ni,Cu)₃Sn₄+Au, and as the bonding time increased, the Ni-foam and SAC305 continuously reacted, and the bonded joint was converted into an IMC. And it was confirmed that the 130 PPI Ni-foam/SAC305 composite solder joint was converted into an IMC at the fastest rate. As a result of performing a shear test to confirm the effect of Ni-foam on mechanical properties, solder joints under all conditions exhibited excellent mechanical properties of 50 MPa or more in the early stages of the TLP bonding process, and the shear strength tends to increase as the bonding time increases.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.5
• /
• pp.169-172
• /
• 2009

The ZnO/CuSn/ZnO (ZCSZ) multilayer films were deposited on polycarbonate substrates using reactive RF and DC magnetron sputtering. The thickness of each layer was 50 nm/5 nm/45 nm, respectively. The ZCSZ films showed a sheet resistance of $44{\Omega}$/Sq, which was an order of magnitude lower than that indium tin oxide (ITO) films. Although the ZCSZ films had a CuSn interlayer that absorbed visible light, both films had similar optical transmittances of 74% in the visible wavelength region. The figure of merit of the ZCSZ films was $1.0{\times}10^{-3}{\Omega}^{-1}$ and was greater than the value of the ITO films, $1.6{\times}10^{-4}{\Omega}^{-1}$. From the X-ray diffraction (XRD) analysis, the ITO films did not show any diffraction peaks, whereas the ZCSZ films showed diffraction peaks for the ZnO (100) and (002) phases. The hardness of the ITO and ZCSZ films were 5.8 and 7.1 GPa, respectively, which were determined using nano-indentation. From these results, the ZCSZ films exhibited greater optoelectrical performance and hardness compared to the conventional ITO films.

• Advances in materials Research
• /
• v.1 no.1
• /
• pp.83-92
• /
• 2012

The effect of under-bump-metallization (UBM) on electromigration was investigated at temperatures ranging from $135^{\circ}C$ to $165^{\circ}C$. The UBM structures were examined: 5-${\mu}m$-Cu/3-${\mu}m$-Ni and $5{\mu}m$ Cu. Experimental results show that the solder joint with the Cu/Ni UBM has a longer electromigration lifetime than the solder joint with the Cu UBM. Three important parameters were analyzed to explain the difference in failure time, including maximum current density, hot-spot temperature, and electromigration activation energy. The simulation and experimental results illustrate that the addition 3-${\mu}m$-Ni layer is able to reduce the maximum current density and hot-spot temperature in solder, resulting in a longer electromigration lifetime. In addition, the Ni layer changes the electromigration failure mode. With the $5{\mu}m$ Cu UBM, dissolution of Cu layer and formation of $Cu_6Sn_5$ intermetallic compounds are responsible for the electromigration failure in the joint. Yet, the failure mode changes to void formation in the interface of $Ni_3Sn_4$ and the solder for the joint with the Cu/Ni UBM. The measured activation energy is 0.85 eV and 1.06 eV for the joint with the Cu/Ni and the Cu UBM, respectively.

• Progress in Superconductivity and Cryogenics
• /
• v.19 no.4
• /
• pp.26-30
• /
• 2017

The promising characteristics of 2G high-temperature superconductor (HTS) coated conductor (CC) tapes have made it possible to apply to various electrical device applications. In this study, the mechanical and electromechanical properties of Sn-Cu double layer stabilized GdBCO CC tapes have been characterized. The stress and strain tolerances of $I_c$ in GdBCO CC tapes adopting stainless steel substrate were evaluated using $I_c$-strain measurement at 77 K under both uniaxial tension and monotonic bending conditions. The results were compared to the conventional single Cu layer stabilized CC tape. As a result, the Sn-Cu double layer stabilized GdBCO CC tapes showed somehow lower or comparable electromechanical properties as compared to the Cu stabilized CC tape ones.

• Journal of Welding and Joining
• /
• v.31 no.1
• /
• pp.58-64
• /
• 2013

The following results were obtained, microstructures and tensile properties in arc brazed joints of DP(dual phase) steel using Cu-5.3wt%Sn insert metal was investigated as function of brazing current. 1) The Fusion Zone was composed of ${\alpha}Fe+{\gamma}Cu$ and Cu23Sn2. The reason for the formation of these solid solutions. Despite, Fe & Cu were impossible to solid solution at room temperature. It's melting & reaction to something of insert metal & Base Metal (DP Steel) by Arc. Brazing Process has faster cooling rate then Cast Process, Supersaturated solid solution at room temperature. 2) The increase Hardness of Fusion Zone was directly proportional to the rise of welding current. Because, ${\alpha}Fe+{\gamma}Cu$ phase (higher hardness than the Cu23Sn2.(104.1Hv < 271.9Hv)) Volume fraction was Growth, due to increasing the amount of base metal melting by High current. 3) The results of tensile shear test by Brazing, All specimens happen to fracture in Fusion Zone. On the other hand, when Brazing Current increasing tend to rise tensile load. but it was very small, about 26-30% of the base metal. 4) The result of fracture analysis, The crack initiate at Triple Point for meet to Upper B.M/Under B.M/Fusion Zone. This Crack propagated to Fusion zone. So ruptured by tensile strength. The Reason to in the fusion zone fracture, Fusion zone by Brazing of hardness (strength) was very lower then the base metal (DP steel). In addition the Fusion Zone's thickness in triple point was thin than the base metal's thickness in triple point.

• Journal of the Korean Ceramic Society
• /
• v.50 no.1
• /
• pp.87-91
• /
• 2013

The doping effect of Sn on the microstructure evolution and dielectric properties was studied in $CaCu_3Ti_{4-x}Sn_xO_{12}$ polycrystals. Samples were produced by a conventional solid-state reaction method. Sintering was carried out at $1115^{\circ}C$ for 2-16 h in air. The dielectric constant and loss were examined at room temperature over a frequency range between $10^2$ and $10^6$ Hz. The microstructure was found to evolve into three stages. Addition of $SnO_2$ led to an increase in density and advanced formation of abnormal grains. The formation of coarse grains with a reduced thickness of the boundary brought about an enhanced dielectric constant and a lower dielectric loss below ~1 kHz. EDS data showed the Cu-rich phase along the grain boundary, which should contribute to the improved dielectric constant according to the internal barrier layer capacitor model. After all, $SnO_2$ was an effective dopant to elevate the dielectric characteristics of $CaCu_3Ti_{4-x}Sn_xO_{12}$ polycrystals as a promoter for abnormal grain growth.

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.3
• /
• pp.29-34
• /
• 2020

The behavior of brittle fracture of electroless nickel immersion gold (ENIG) /Sn-3.0wt.%Ag-0.5wt.%Cu (SAC305) solder joints was evaluated. The pH of the electroless nickel plating solution for ENIG surface treatment was changed from 4.0 to 5.5. As the pH of the Ni plating solution increased, pin hole in the Ni-P layer increased. The thickness of the interfacial intermetallic compound (IMC) of the solder joint increased with pH of Ni plating solution. The high speed shear strength of the SAC305 solder joint on ENIG surface finish decreased with the pH of the Ni plating solution. In addition, the brittle fracture rate of the solder joint was the highest when the pH of the Ni plating solution was 5.

• Korean Journal of Materials Research
• /
• v.30 no.2
• /
• pp.68-73
• /
• 2020

Due to its favorable optical properties, Cu₂SnS₃ (CTS) is a promising material for thin film solar cells. Doping, which modifies the absorber properties, is one way to improve the conversion efficiency of CTS solar cells. In this work, CTS solar cells with selenium doping were fabricated on a flexible substrate using sputtering method and the effect of doping on the properties of CTS solar cells was investigated. In XRD analysis, a shift in the CTS peaks can be observed due to the doped selenium. XRF analysis confirmed the different ratios of Cu/Sn and (S+Se)/(Cu+Sn) depending on the amount of selenium doping. Selenium doping can help to lower the chemical potential of sulfur. This effectively reduces the point defects of CTS thin films. Overall improved electrical properties were observed in the CTS solar cell with a small amount of selenium doping, and a notable conversion efficiency of 1.02 % was achieved in the CTS solar cell doped with 1 at% of selenium.

• Korean Journal of Materials Research
• /
• v.28 no.10
• /
• pp.564-569
• /
• 2018

$Cu_2ZnSn(S,Se)_4$ (CZTSSe) films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu(CZT) precursor films. The precursor was dried in a capped state with aqueous NaOH solution. The CZT precursor films were sulfo-selenized in the S + Se vapor atmosphere. Sodium was doped during the sulfo-selenization treatment. The effect of sodium doping on the structural and electrical properties of the CZTSSe thin films were studied using FE-SEM(field-emission scanning electron microscopy), XRD(X-ray diffraction), XRF(X-ray fluorescence spectroscopy), dark current, SIMS(secondary ion mass spectrometry), conversion efficiency. The XRD, XRF, FE-SEM, Dark current, SIMS and cell efficiency results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the sodium doping. Further detailed analysis and discussion for effect of sodium doping on the properties CZTSSe thin films will be discussed.