• Journal of Powder Materials
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• v.18 no.3
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• pp.256-261
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• 2011

In order to make a $Cu_2ZnSnSe_4$ (CZTSe) sputtering target sintered for solar cell application, synthesis of CZTSe compound by solid state reaction of Cu, Zn, Sn and Se mixed powders and effects of ball milling condition on sinterability such as ball size, combination of ball size, ball milling time and sintering temperature, was investigated. As a result of this research, sintering at $500^{\circ}C$ after ball milling using mixed balls of 1 mm and 3 mm for 72 hours was the optimum condition to synthesis near stoichiometric composition of $Cu_2ZnSnSe_4$ and to prepare sintered pellet with high density relatively.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.97-100
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• 2015

The kesterite $Cu_2ZnSnSe_4$ (CZTSe) thin film solar cells were synthesized by selenization of sputtered Cu/Sn/Zn metallic precursors on Mo coated soda lime glass substrate in Ar atmosphere. Cu/Sn/Zn metallic precursors were deposited by DC magnetron sputtering process with 30 W power at room temperature. As-deposited metallic precursors were placed in a graphite box with Se pellets and selenized using rapid thermal processing furnace at various temperature ($480^{\circ}C{\sim}560^{\circ}C$) without using a toxic $H_2Se$ gas. Effects of Selenization temperature on the morphological, crystallinity, electrical properties and cell efficiency were investigated by field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD), J-V measurement system and solar simulator. Further details about effects of selenization temperature on CZTSe thin films will be discussed.

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.305-309
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• 2012

In this study, ZnO nanorods and $SnO_2$-CuO heterogeneous oxide were grown on membrane-type gas sensor platforms and the sensing characteristics for carbon monoxide (CO) were studied. Diaphragm-type gas sensor platforms with built-in Pt micro-heaters were made using a conventional bulk micromachining method. ZnO nanorods were grown from ZnO seed layers using the hydrothermal method, and the average diameter and length of the nanorods were adjusted by changing the concentration of the precursor. Thereafter, $SnO_2$-CuO heterogeneous oxide thin films were grown from evaporated Sn and Cu thin films. The average diameters of the ZnO nanorods obtained by changing the concentration of the precursor were between 30 and 200 nm and the ZnO nanorods showed a sensitivity value of 21% at a working temperature of $350^{\circ}C$ and a carbon monoxide concentration of 100 ppm. The $SnO_2$-CuO heterogeneous oxide thin films showed a sensitivity value of 18% at a working temperature of $200^{\circ}C$ and a carbon monoxide concentration of 100 ppm.

• Journal of Welding and Joining
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• v.20 no.2
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• pp.77-81
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• 2002

Many kinds of Pb-free solder have been investigated because of the environmental concerns. Sn-Ag-Cu system is well blown as most competitive Pb-free solder. However, since Sn-Ag-Cu system has relatively high melting point compared to Sn-Pb eutectic, it may a limitation, the some application. In this study, Bi and In contained solder of $Sn_3Ag_8Bi_5In$ which has relatively lower melting point, $188~204^{\circ}C$, was investigated. $Sn_3Ag_8Bi_5In$ solder ball of $500\mu\textrm{m}$ diameter was set on the Ni/Cu/Cr-UBM and reflow soldered in the range of $220~240^{\circ}C$ for 5~15s. The maximum shear strength of the solder ball was around 170mN by reflowing at $240^{\circ}C$ for 10s. Intermetallic compound formed on the UBM of Si-wafer was analysed by SEM(scanning electron microscope) and XRD(X-ray diffractometer).

• Journal of the Microelectronics and Packaging Society
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• v.18 no.2
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• pp.49-55
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• 2011

The failure of electronic instruments is mostly caused by heat and shock. This shock causes the crack initiation at the solder joint interface of PCB component which is closely related with the formation of intermetallic compound(IMC). The Ag content in Pb-free Sn-xAg-0.5Cu solder alloy used in this study was 1.0, 1.2 and 3.0 wt.%, respectively. After soldering with PCB component, isothermal aging was performed to 1000 hrs. The growth of IMC layer was observed during isothermal aging. The drop impact property of solder joint was evaluated by impact bending test method. The solder joint made with the solder containing lower Ag content showed better impact bending property compared with that with higher Ag content. On the contrary to this result, the solder joint made with solder containing higher Ag content showed better impact bending property after aging. It should be caused by the formation of fine $Ag_3Sn$, which relieved the impact. It showed consequently the different effect of fine $Ag_3Sn$ and coarse $Cu_6Sn_5$ particles formed in the IMC layer on the impact bending property.

• Journal of Powder Materials
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• v.16 no.4
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• pp.268-274
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• 2009

For the purpose of obtaining basic information on the development of lead-free materials, a high density composites (a) W-Cu, (b) W-Sn (c)W-Cu-Sn and (d) W-Cu-Ni were fabricated by the P/M method. The particle size of used metal powders were under 325 mesh, inner size of compaction mould was $\phi8$ mm, and compaction pressure was 400 MPa. A High density composite samples were sintered at a temperature between $140^{\circ}C$ and $1050^{\circ}C$ for 1 hour under Ar atmosphere. The microstructure, phase transformation and physical properties of the sintered samples were investigated. As the results, the highest relative density of 95.86% (10.87 g/$cm^3$) was obtained particularly in the sintered W-Cu-Sn ternary system sample sintered at 450 for 1hr. And, Rockwell hardness (HRB) of 70.0 was obtained in this system.

• Journal of Welding and Joining
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• v.30 no.6
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• pp.1-5
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• 2012

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.81-89
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• 2022

The in-situ electromigration(EM) and annealing test were performed at 110, 130, and 150℃ with a current density of 1.3×10⁵ A/cm² conditions to investigate the effect of non-conductive film (NCF) on growth kinetics of intermetallic compound (IMC) in Cu/Ni/Sn-2.5Ag microbump. As a result, the activation energy of the Ni₃Sn₄ IMC growth in the annealing and EM conditions according to the NCF application was about 0.52 eV, and there was no significant difference. This is because the growth rate of Ni-Sn IMC is much slower than that of Cu-Sn IMC, and the growth behavior of Ni-Sn IMC increases linearly with the square root of time, so it has the same reaction mechanism dominated by diffusion. In addition, there is no difference in the activation energy of the Ni₃Sn₄ IMC growth because the EM resistance effect of the back stress according to the NCF application is not large.

• Conservation Science in Museum
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• v.2
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• pp.57-68
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• 2000

This study is a scientific analysis of 12 bronze materials which were excavated from Sanoisa temple in Chongju. Analysis of crystalline shape, size and distribution of the each sample metal suggested that they can be classified as tableware(wrought), vessels for memorial service(casting) and bell bronze, which is the same result as classification based on elemental composition. Most of the tableware are forging wares with composition of 8:2:0 in Cu:Sn:Pb, and vessels for memorial service are casting wares whose composition is 7:1:2 in Cu:Sn:Pb, and bell bronze's composition is Cu:Sn:Pb = 85:10:5/9:1:0. The result clearly shows that composition is closely related with usage and manufacturing method of wares. Trace elements such as Co, Fe and As are the elements with high correlation coefficient with Cu, which means they exist as impurities in Cu, and the content of As showed an increase in the order of tableware, memorial service vessels and bell bronze. In addition, the analysis of lead isotope ratio showed that 3 bronze materials with high lead content were made from the lead coming from Japan and China. The composition of the solder was Cu:Sn:Pb = 83:12:5 where small Pb crystals were distributed evenly.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.81-88
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• 2010

Thermal annealing and electromigration test were performed at $150^{\circ}C$ and $4{\times}10^3\;A/cm^2$ conditions in order to investigate the effect of PCB surface finishs on the growth kinetics of intermetallic compound (IMC) in Sn-3.0Ag-0.5Cu solder bump. The surface finishes of the electrodes of printed circuit board (PCB) were organic solderability preservation (OSP), immersion Sn, and electroless Ni/immersion gold (ENIG). During thermal annealing, the OSP and immersion Sn show similar IMC growth velocity, while ENIG surface finish had much slower IMC growth velocity. Applying electric current accelerated IMC growth velocity and showed polarity effect due to directional electron flow.