• 한국표면공학회지
• /
• 제43권3호
• /
• pp.148-153
• /
• 2010

Transparent conducting films having a hybrid structure of GZO/Metal/GZO were prepared on glass substrates by sequential deposition using DC magnetron sputtering. Silver, copper, aluminum and zinc thin films were used as the intermediate metal layers in the hybrid structure. The electrical and optical properties of hybrid transparent conducting films were investigated with varying the thickness of metal layer or GZO layers. With increasing the metal thickness, hybrid films showed a noticeable improvement of the electrical conductivity, which is mainly dependent on the electrical property of the metal layer. GZO(40 nm)/Ag(10 nm)/GZO(40 nm) film exhibits a resistivity of $5.2{\times}10^{-5}{\Omega}{\cdot}cm$ with an optical transmittance of 82.8%. For the films with Zn interlayer, only marginal reduction in the resistivity was observed. Furthermore, unlike other metals, hybrid films with Zn interlayer showed a decrease in the resistivity with increasing the GZO thickness. The optimal thickness of GZO layer for anti-reflection effect at a given thickness of metal (10 nm) was found to be critically dependent on the refractive index of the metal. In addition, x-ray diffraction analysis showed that the insertion of Ag layer resulted in the improvement of crystallinity of GZO films, which is beneficial for the electrical and optical properties of hybrid-type transparent conducting films.

• 센서학회지
• /
• 제6권4호
• /
• pp.258-264
• /
• 1997

$YBa_{2}Cu_{3}O_{7}$ 단일층 박막으로 된 직접결합형 직류 SQUID magnetometer를 설계하여 $SrTiO_{3}$기판위에 제작하였다. 검출코일은 외변 8.5 mm, 선폭은 2.6 mm로 하였으며, 조셉슨 접합의 선폭은 $3\;{\mu}m$, SQUID 인덕턴스는 50pH로 하였다. 제작된 소자의 외부 자속에 대한 전압 변조신호의 크기는 최대 $65\;{\mu}V$, 자장잡음은 1 Hz에서 약0.6 pT/$\sqrt{Hz}$ 이었다. 이 SQUID magnetometer를 사용하여 자기차폐실 내에서 심자도 파형을 측정하여 가산평균하였을 때 매우 양호한 심자도 파형을 얻을 수 있었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
• /
• pp.60-60
• /
• 2000

The adhesion interface formation between copper and poly(ethylene terephthalate)(PET), poly(methyl methacrylate)(PMMA) and Polyimide films was treated using Ion assisted reaction system to sequential sputter deposition by High-Frequency ion source. The ion beam modification system used a new type of low power HF ion thruster for space application as new low thruster electric propulsion system. Low power HF ion thruster with diameter 100mm gives the opportunity to obtain beams of Ar+ with currents 20~150 mA (current density 0.5~3.5 mA/cm2) and energy 200~2500eV at HF power level 10~150 W. Using Ar as a working gas it is possible to obtain thrust within 3~8 mN. Contact angles for untreated films were over 95$^{\circ}$ and 80 for Pet, 10o for PMMA and 12o for PI samples as a condition of ion assisted reaction at the ion dose of 10$\times$1016 ions/cm2, the ion beam potential of 1.2 keV and 4 ml/min for environmental gas flow rate. 900o peel tests yielded values of 15 to 35 for PET, 18 to 40 and 12 to 36 g/min. respectively. High resolution X-ray photoelectron spectrocopy is the Cls region for Cu metal on these polymer substrates showed increases in C=O-O groups for polymide, whereas PET and PMMA treated samples showed only C=O groups with increase the ion dose. Finally, unstable polymer surface can be changed from hydrophobic to hydrophilic formation such as C-O and C=O that were confirmed by the XPS analysis, conclusionally, the ion assisted reaction is very effective tools to attach reactive ion species to form functional groups on C-C bond chains of PET, PMMA and PI.

• 한국초전도ㆍ저온공학회논문지
• /
• 제20권4호
• /
• pp.41-45
• /
• 2018

We have investigated the effect of $Y_2O_3$ nanoparticles on the pinning properties of $Y_2O_3$-doped $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films. Both undoped and $Y_2O_3$-doped GdBCO films were grown on $CeO_2$-buffered MgO (100) single crystal substrates by pulsed laser deposition (PLD) using KrF (${\lambda}=248nm$) laser. The $Y_2O_3$ doping contents were controlled up to ~ 2.5 area% by varying the internal angles of $Y_2O_3$ sectors put on the top surface of GdBCO target. Compared with the $Gd_2O_3$-doped GdBCO films previously reported by our group [1], the $Y_2O_3$-doped GdBCO films exhibited less severe critical temperature ($T_c$) drop and thus slightly enhanced critical current densities ($J_c$) and pinning force densities ($F_p$) at 65 K for the applied field parallel to the c-axis of the GdBCO matrix (B//c) with increasing the doping content. Below 40 K, the in-field $J_c$ and $F_p$ values of all $Y_2O_3$-doped GdBCO films exhibited higher than those of undoped GdBCO film, suggesting that $Y_2O_3$ inclusions might act as effective pinning centers.

• 한국산학기술학회논문지
• /
• 제19권1호
• /
• pp.18-24
• /
• 2018

친환경자동차의 보급 확대를 위한 정책수립과 기술개발이 지속적으로 이루어지고 있는 실정이나 아직까지도 내연기관이 차지하는 비중은 약 95% 차지하고 있다. 화석연료를 기반으로 하는 내연기관의 엄격한 배기가스규제를 충족시키기 위해 자동차와 선박용 후처리장치의 비중이 점차로 증가하고 있다. 천연가스는 대기환경 오염물질을 거의 배출하지 않는 청정연료이며, 주로 시내버스의 연료로 사용되어져 왔다. CNG 버스의 보급률이 계속적으로 증가하고 있으며 이에 대한 엄격한 배기규제를 충족시키고 경제적인 후처리장치의 연구개발이 필요하다. 장기적인 연구로는, CNG 버스에서 배출되는 유독성가스인 $CH_4$와 NOx를 동시저감시키는 새로운 NGOC/LNT+NGOC/SCR 복합시스템을 개발하는 것이다. 이 연구는 복합시스템 후단에 장착되는 선택적인촉매환원(SCR)의 washcoat를 세라믹과 메탈 담체에 코팅하여 $de-CH_4/NOx$ 특성을 파악하는 것이다. V, Cu-SCR 촉매는 $CH_4$ 산화반응에는 영향을 미치지 않고, 이중층으로 코팅된 2, 4번 NGOC/SCR 촉매는 $400^{\circ}C$에서 $CH_4$가 산화되기 시작하여 약 $550^{\circ}C$에서는 약 20% 수준으로 $CH_4$가 저감되었다. NGOC/SCR처럼 two layer로 코팅된 2, 4번 SCR 촉매는 $350^{\circ}C$이상에서는 마이너스(-) NOx 전환률을 나타냈다. 이는 $ NH_4NO_3$(질산염)으로 흡장되어 있는 NOx가 촉매의 반응속도가 저하됨에 따라 $N_2$로 환원되지 못하고 $NO+NO_2$로 탈착되었기 때문이다. 세라믹 기반의 복합시스템은 $400^{\circ}C$에서 약 30%, $500^{\circ}C$에서 LOT50에 이르러 메탈 기반의 복합시스템보다 약 20% CH4 정화 성능이 높았고, NGOC/LNT+Cu-SCR 복합시스템 조합이 적합하다.

• KSBB Journal
• /
• 제19권1호
• /
• pp.50-56
• /
• 2004

본 연구의 목적은 방향족 화한물인 aniline, benzoate, p-hydroxybenzoate를 분해할 수 있는 Delftia sp. JK-2에서 이들 각 기질에서 배양시 다른 종류의 dioxygenases를 분리 정제하고, 정제된 dioxygenases의 특성을 조사하기 위하여 실시하기 위한 것이다. 기질로서 benzoate, aniline, 또는 p-hydroxybenzoate에 따라 분리된 dioxygenases는 각각 catechol 1,2-dioxygenase (C1 ,2O), catechol 2,3-dioxygenase(C2, 3O), 그리고 protocatechuate 4,5-dioxygenase (4,5-PCD)였다. 각 dioxygenases의 특성을 조사하기 위하여 먼저 benzoate, aniline 또는 p-hydroxybenzoate에서 배양한 Delftia sp. JK-2 세포를 초음파 분쇄기로 파쇄하여, ammonium sulfate precipitation, DEAE-sepharose, 그리고 Q-sepharose의 순서로 정제하여 농축하였다. 정제$.$농축된 dioxygenases의 특이 활성도를 보면 C1, 2O는 3.3 unit/mg, C2, 3O는 4.7unit/mg이고, 4,5-PCD는 2.0 unit/mg이다 C1, 2O와 C2, 3O의 기질 특이성 조사에서는 catechol과 4-methylcatechol에서 두 효소 모두 효소 활성이 나타났으며, C1. 2O에서는 3-methylcatechol에서 약간의 활성이 확인되었고, 4,5-PCD는 protocatechuate에서만 효소 활성을 보여주었다. C1l, 2O와 C2, 3O는 3$0^{\circ}C$와 pH 8.0에서 최적의 활성을 나타내는 것으로 조사되었으며, 4,5-PCD는 3$0^{\circ}C$와 pH 7.0에서 최적의 활성이 조사되었다. Delftia sp. JK-2에서 정제된 C1, 2O와 C2, 3O의 효소활성은 Ag$^{+}$, Hg$^{+}$, 그리고 Cu$^{2+}$에 의해 억제되는 것으로 나타났으며, 4,5-PCD의 경우에는 Ag$^{+}$, Hg$^{+}$, 그리고 Cu$^{2+}$ 뿐만 아니라 Fe$^{3+}$ 에 이해서도 효소 활성이 억제되는 것이 확인되었다. C1, 2O, C2, 3O, 4,5-PCD의 분자량은 SDS-PAGE에 의해 각각 60kDa, 35kDa, 62kDa로 측정되었다.

• Journal of Microbiology and Biotechnology
• /
• 제10권3호
• /
• pp.307-311
• /
• 2000

Abstract Extracellular chitinase was purified from the culture liquid of the marine bacterium, Bacillus sp. LJ-25 , and its enzymatic properties were examined. The purified chitinase exhibited a single band on SDS-PAGE and the molecular weight was estimated to be approximately 50 kDa. The optimum pH and temperature for the enzymatic activity were 7.0 and $35^{\circ}C$, respectively. The activity of the chitinase was strongly inhibited by $Zn^{2+}$ and slightly inhibited by $Ba^{2+},{\;}Co^{2+},{\;}Mn^{2+},{\;}and{\;}Cu^{2+}$. The purified chitinase did not hydrolyze $p-nitrophenolN-acetyl-{\bata}-D-glucosaminide{\;}(GlcNAc)_2$ and Micrococcus lysodeikticus cells, which are known to be the substrates for exo-type chitinase. Among the hydrolyzates of colloidal chitin, $(GlcNAc)_2$ was in the highest concentration with small amounts of GlcNAc and $(GlcNAc)_3$..

• ETRI Journal
• /
• 제25권2호
• /
• pp.65-72
• /
• 2003

To achieve cost and size reductions, we developed a low cost manufacturing technology for RF substrates and a high performance passive process technology for RF integrated passive devices (IPDs). The fabricated substrate is a conventional 6" Si wafer with a 25${\mu}m$ thick $SiO_2$ surface. This substrate showed a very good insertion loss of 0.03 dB/mm at 4 GHz, including the conductive metal loss, with a 50 ${\Omega}$ coplanar transmission line (W=50${\mu}m$, G=20${\mu}m$). Using benzo cyclo butene (BCB) interlayers and a 10 ${\mu}m$ Cu plating process, we made high Q rectangular and circular spiral inductors on Si that had record maximum quality factors of more than 100. The fabricated inductor library showed a maximum quality factor range of 30-120, depending on geometrical parameters and inductance values of 0.35-35 nH. We also fabricated small RF IPDs on a thick oxide Si substrate for use in handheld phone applications, such as antenna switch modules or front end modules, and high-speed wireless LAN applications. The chip sizes of the wafer-level-packaged RF IPDs and wire-bondable RF IPDs were 1.0-1.5$mm^2$ and 0.8-1.0$mm^2$, respectively. They showed very good insertion loss and RF performances. These substrate and passive process technologies will be widely utilized in hand-held RF modules and systems requiring low cost solutions and strict volumetric efficiencies.

• Journal of electromagnetic engineering and science
• /
• 제8권3호
• /
• pp.129-133
• /
• 2008

An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42\;mm^2$.

• 한국초전도ㆍ저온공학회논문지
• /
• 제6권3호
• /
• pp.6-11
• /
• 2004

YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films were deposited on MgO(100) and SrTiO$_3$(100) single crystal substrates by cold-wall type MOCVD method using continuous source supplying system. Under the deposition temperature of 740∼76$0^{\circ}C$, c-axis oriented YBCO films were obtained. In case of the YBCO films deposited on MgO (100) single crystal substrate, the critical temperature (T$_{c}$) was under 81 K regardless of the deposition conditions, whereas T$_{c}$ of the YBCO films deposited on SrTiO$_3$(100) single crystal substrate was 83∼84 K. The critical current (I$_{c}$) of the YBCO film deposited on SrTiO$_3$(100) single crystal substrate for 30 min was 49 A/cm-width and the critical current density (J$_{c}$) was 0.82 MA/$\textrm{cm}^2$ to film thickness of 0.6 ${\mu}{\textrm}{m}$. I$_{c}$ increased to 84.4 A/cm-width as the deposition time increased to 50 min, but J$_{c}$ decreased to 0.53 MA/$\textrm{cm}^2$ to film thickness of 1.8 ${\mu}{\textrm}{m}$.rm}{m}$.