• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.245-245
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• 2009

l-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Copper oxide(CuO) has been realized as a p-type metal oxide semiconductor with narrow band gap of 1.2 -1.5eV. Copper oxide nanostructures can be synthesized by various growth method such as oxidation reaction, thermal evaporation thermal decomposition, sol-gel. and Mostly CuO nanowire prepared on the Cu substrate such as Copper foil, grid, plate. In this study, CuO NWs were grown by thermal oxidation (at various temperatures in air (1 atm)) of Cu metal deposited on CuO (20nm)/$SiO_2$(250nm)/Si. A 20nm-thick CuO layer was used as an adhesion layer between Cu metal and $SiO_2$

• 한국재료학회지
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• 제28권1호
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• pp.32-37
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• 2018

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

• 한국결정성장학회지
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• 제27권5호
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• pp.243-248
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• 2017

본 연구에서는 산화주석(IV) 첨가량을 달리하여 동화유약 시편을 제조하고 발색기구를 분석하기 위하여 분광 분석, 결정상 분석, 미세구조 분석을 실시하여 색상과의 상관성을 분석하였다. 산화주석(VI) 첨가량이 증가함에 따라 동화유약의 붉은색은 사라지고 CIEab 값이 감소하여 무채색으로 발색하였다. 산화주석은 유약층에 고르게 분포하여 Cu nuclei가 성장하여 붉은색으로 발색하는 것을 방해하고 기포 주변의 metal Cu와 반응하여 합금을 형성하였다. 이로 인해 산화주석 첨가량이 증가함에 따라 금속 Cu 피크는 사라지고 미세한 $Cu_2O$ 피크만 남게 된다. 산화주석을 3.79 % 첨가하였을 때는 유약에 붉은색을 내는 $Cu_2O$보다 검정색을 나타내는 CuO와 Cassiterite $SnO_2$가 색상에 더 영향을 미치는 것으로 보여진다.

• 한국재료학회지
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• 제26권2호
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• pp.84-89
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• 2016

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• 한국재료학회지
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• 제23권9호
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• pp.477-482
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• 2013

We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type $CuAlO_2$ thin film gas sensors. The $CuAlO_2$ film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type $CuAlO_2$ active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type $CuAlO_2$ layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type $CuAlO_2$ thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of $180^{\circ}C$. We also found that these $CuAlO_2$ thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor $CuAlO_2$ thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor $CuAlO_2$ thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.99-99
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• 2014

Transparent oxide semiconductors (TOSs) are. currently attracting attention for application to transparent electrodes in optoelectronic devices and active channel layers in thin-film transistors. One of the key issues for the realization of next generation transparent electronic devices such as transparent complementary metal-oxide-semiconductor thin-film transistors (CMOS TFTs), transparent wall light, sensors, and transparent solar cell is to develop p-type TOSs. In this talks, I will introduce issues and status related to p-type TOSs such as LnCuOQ (Ln=lanthanide, Q=S, Se), $SrCu_2O_2$, $CuMO_2$ (M=Al, Ga, Cr, In), ZnO, $Cu_2O$ and SnO. The growth and properties of SnO and Cu-based oxides and their application to electronic devices will be discussed.

• 한국표면공학회지
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• 제29권4호
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• pp.238-252
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• 1996

In order to study the effect of interface oxides on the adhesion strength of the copper/epoxy system, copper foils were immersed in black oxide or brown oxide forming solutions before lamination with epoxy prepregs, and variation of peel strength with the treatment time were investigated. Results showed that peel strength decreased rapidly up to 1 minute of treatment lime and remained constant in the case of the black oxide treated specimens, which was accompanied by the thickening of $Cu_2O$ at the Copper/Epoxy interface during the period. In contrast, peel strength increased rapidly up to 1 minute of treatment time and remained constant in the case of the brown oxide treated specimens, which could be ascribed to the thickening of CuO. Subsequent heat treatments of the Copper/Epoxy laminations at $120^{\circ}C$ in air showed that peel strength remained constant in the case of the black oxide treated specimens but decreased gradually in the case of the brown oxide treated specimens. Following XPS analyses revealed that the latter was possibly caused by the coalescence of CuO at the Copper/Epoxy interface into $Cu_2O$.

• 한국재료학회지
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• 제28권4호
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• pp.214-220
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• 2018

We report on the fabrication and photoelectrochemical(PEC) properties of a $Cu_2O$ thin film/ZnO nanorod array oxide p-n heterojunction structure with ZnO nanorods embedded in $Cu_2O$ thin film as an efficient photoelectrode for solar-driven water splitting. A vertically oriented n-type ZnO nanorod array was first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type $Cu_2O$ thin film was directly electrodeposited onto the vertically oriented ZnO nanorods array to form an oxide semiconductor heterostructure. The crystalline phases and morphologies of the heterojunction materials were characterized using X-ray diffraction and scanning electron microscopy as well as Raman scattering. The PEC properties of the fabricated $Cu_2O/ZnO$ p-n heterojunction photoelectrode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the $Cu_2O/ZnO$ photoelectrode was found to exhibit a negligible dark current and high photocurrent density, e.g., $0.77mA/cm^2$ at 0.5 V vs $Hg/HgCl_2$ in a $1mM\;Na_2SO_4$ electrolyte, revealing an effective operation of the oxide heterostructure. In particular, a significant PEC performance was observed even at an applied bias of 0 V vs $Hg/HgCl_2$, which made the device self-powered. The observed PEC performance was attributed to some synergistic effect of the p-n bilayer heterostructure on the formation of a built-in potential, including the light absorption and separation processes of photoinduced charge carriers.

• 한국재료학회지
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• 제12권12호
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• pp.941-946
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• 2002

Both Cu and Cu-oxide nanopowders have great potential as conductive paste, solid lubricant, effective catalysts and super conducting materials because of their unique properties compared with those of commercial micro-sized ones. In this study, Cu and Cu-oxide nanopowders were prepared by Pulsed Wire Evaporation (PWE) method which has been very useful for producing nanometer-sized metal, alloy and ceramic powders. In this process, the metal wire is explosively converted into ultrafine particles under high electric pulse current (between $10^4$ and $10^{ 6}$ $A/mm^2$) within a micro second time. To prevent full oxidations of Cu powder, the surface of powder has been slightly passivated with thin CuO layer. X-ray diffraction analysis has shown that pure Cu nanopowders were obtained at $N_2$ atmosphere. As the oxygen partial pressure increased in $N_2$ atmosphere, the gradual phase transformation occurred from Cu to $Cu_2$O and finally CuO nanopowders. The spherical Cu nanopowders had a uniform size distribution of about 100nm in diameter. The Cu-oxide nanopowders were less than 70nm with sphere-like shape and their mean particle size was 54nm. Smaller size of Cu-oxide nanopowders compared with that of the Cu nanopowders results from the secondary explosion of Cu nanopowders at oxygen atmosphere. Thin passivated oxygen layer on the Cu surface has been proved by XPS and HRPD.