• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.176.1-176.1
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• 2014

Graphene has attracted an increasing attention due to its extraordinary electronic, mechanical, and thermal properties. Especially, the two dimensional (2D) sheet of graphene with an extremely high surface to volume ratio has a great potential in the preparation of multifunctional nanomaterials, as 2D supports to host metal nanoparticles (NPs). Copper oxide is widely used in various areas as antifouling paint, p-type semiconductor, dry cell batteries, and catalysts. Although the copper oxide(II) has been well known for efficient catalyst in C-N cross-coupling reaction, copper oxide(I) has not been highlighted. In this research, CuO and Cu2O nanoparticles (NPs) dispersed on the surface of grapehene oxide (GO) have been synthesized by impregnation method and their morphological and electronic structures have been systemically investigated using TEM, XRD, and XAFS. We demonstrate that both CuO and Cu2O on graphene presents efficient catalytic performance toward C-N cross coupling reaction. The detailed structural difference between CuO and Cu2O NPs and their effect on catalytic performance are discussed.

• Journal of Powder Materials
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• v.21 no.3
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• pp.191-195
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• 2014

This study reports a simple way of fabricating the porous Cu with unidirectional pore channels by freeze drying camphene slurry with Cu oxide coated Cu powders. The coated powders were prepared by calcination of ball-milled powder mixture of Cu and Cu-nitrate. Improved dispersion stability of camphene slurry could be achieved using the Cu oxide coated Cu powders instead of pure Cu powders. Pores in the frozen specimen at $-25^{\circ}C$ were generated by sublimation of the camphene during drying in air, and the green bodies were sintered at $750^{\circ}C$ for 1 h in $H_2$ atmosphere. XRD analysis revealed that the coated layer of Cu oxide was completely converted to Cu phase without any reaction phases by hydrogen heat treatment. The porous Cu specimen prepared from pure Cu powders showed partly large pores with unidirectional pore channels, but most of pores were randomly distributed. In contrast, large and aligned parallel pores to the camphene growth direction were clearly observed in the sample using Cu oxide coated Cu powders. Pore formation behavior depending on the initial powders was discussed based on the degree of powder rearrangement and dispersion stability in slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.364-365
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• 2005

This paper report nanotribological behavior between Si tip and Cu wafer surfaces which was treated various concentration of $H_2O_2$. This experimental approach has proven atomic level insight into Cu CMP. It has been used to study interfacial friction and adhesion force between Si tip and Cu wafer surfaces in air by atomic force microscopy (AFM). Adhesion force of Cu surfaces which was pre-cleaned in diluted HF solution was lager than Cu oxide surfaces. Adhesion force of Cu oxide surface was saturated around 7 nN. Slope of normal force vs lateral signal was increased as increasing concentration of $H_2O_2$ and it was saturated around 24. Friction force of Cu oxide was lager than Cu.

• Journal of the Korean institute of surface engineering
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• v.55 no.2
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• pp.63-69
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• 2022

Preparing various types of thin films of oxide semiconductors is a promising approach to fabricate efficient photoanodes and photocathodes for hydrogen production via photoelectrochemical (PEC) water splitting. In this work, we investigate the feasibility of an efficient photocathode for PEC water reduction of a p-type oxide semiconductor cupric oxide (CuO) thin film prepared via a facile method combined with sputtering Cu metallic film on fluorine-doped thin oxide (FTO) coated glass substrate and subsequent thermal oxidation of the sputtered Cu metallic film in dry air. Characterization of the structural, optical, and PEC properties of the CuO thin film prepared at various Cu sputtering powers reveals that we can obtain an optimum CuO thin film as an efficient PEC photocathode at a Cu sputtering power of 60 W. The photocurrent density and the optimal photocurrent conversion efficiency for the optimum CuO thin film photocathode are found to be -0.3 mA/cm² and 0.09% at 0.35 V vs. RHE, respectively. These results provide a promising route to fabricating earth-abundant copper-oxide-based photoelectrode for sunlight-driven hydrogen generation using a facile method.

• Journal of the Korean institute of surface engineering
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• v.55 no.4
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• pp.215-221
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• 2022

In the present work, copper oxide thin films were formed by heat-treatment method with different temperatures and atmosphere, e.g., at 200 ~ 400 ℃; in air and Ar atmosphere. The morphological, electrical and optical properties of the thermally fabricated Cu oxide films were analyzed by SEM, XRD, and UV-VIS spectrometer. Thereafter, photoelectrochemical properties of the thermal copper oxide films were analyzed under solar light (AM 1.5, 100 mW/cm²). Conclusively, the highest photocurrent was obtained with Cu₂O formed under the optimum annealing condition at 300 ℃ in air atmosphere. In addition, EIS results of Cu oxide formed in air atmosphere showed relatively low resistance and long electron life-time compared with Cu Oxide fabricated in Ar atmosphere at the same temperature. This is because heat-treatment in Ar atmosphere could not form Cu₂O due to lack of oxygen, and thermally formed CuO at high temperature suppressed stability and conductivity of the Cu oxide.

• Applied Chemistry for Engineering
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• v.18 no.6
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• pp.618-624
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• 2007

thermochemical methane reforming consisting of two steps on Cu/Fe/Zr mixed oxide media was carried out using a fixed bed infrared reactor. In the first step, the metal oxide was reduced with methane to produce CO, $H_2$ and the reduced metal oxide in the temperature of 1173 K. In the second step, the reduced metal oxide was re-oxidized with steam to produce $H_2$ and the metal oxide in the temperature of 973 K. The reaction characteristics on the added amounts of Cu in Cu/Fe/Zr mixed oxide media and the cyclic tests were evaluated. With the increase of the added amount of Cu in Cu/Fe/Zr mixed oxide media, the conversion of $CH_4$, the selectivity of $CO_2$ and the $H_2/CO$ molar ratio were increased, while the selectivity of CO was decreased in the first step. On the other hand, the evolved amount of $H_2$ was decreased with increasing the added amount of Cu in the second step. The $Cu_xFe_{3-x}O_4/ZrO_2$ medium added with Cu of x = 0.7 showed good regeneration properties in the 10th cyclic tests indicating that the medium had high durability. In addition, the gasification of the deposited carbon in the water splitting step was promoted with the addition of Cu in the media.

• Korean Journal of Metals and Materials
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• v.49 no.12
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• pp.950-955
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• 2011

In the present study, the formation of hollow Cu oxide nanoparticles through the oxidation process at temperatures from 200 to $300^{\circ}C$ has been studied by transmission electron microscopy with Cu nanoparticles produced by the plasma arc discharge method. The Cu nanoparticles had a thin oxide layer on the surface at room temperature and the thickness of this oxide layer increased during oxidation in atmosphere at $200-300^{\circ}C$ However, the oxide layer consisted of $Cu_2O$ and CuO after oxidation at $200^{\circ}C$ whereas this layer was comprised of only CuO after oxidation at $300^{\circ}C$ On the other hand, hollow Cu oxide nanoparticles are obtained as a result of vacancy aggregation in the oxidation processes, resulting from the rapid outward diffusion of metal ions through the oxide layer during the oxidation process.

• Proceedings of the KAIS Fall Conference
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• 2010.11a
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• pp.356-358
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• 2010

Cuprous oxide ($Cu_2O$)를 기초로 하여 산화 박막 트랜지스터에 대하여 연구를 하였다. 일정한 두께의 cuprous oxide ($Cu_2O$) 박막을 조건별로 열처리 공정을 하고 그에 따른 변화를 측정을 하였다. 그 측정한 결과 중 가장 좋은 열처리 조건으로 열 증착 방식(Vacuum Thermal Evaporation)을 사용하여 cuprous oxide ($Cu_2O$) 비정질 산화 박막 트랜지스터를 제작 및 측정했다.

• Bulletin of the Korean Chemical Society
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• v.32 no.9
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• pp.3395-3399
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• 2011

Copper oxide thin films were synthesized by reactive radio frequency magnetron sputtering at different oxygen gas ratios. The chemical and physical properties of the thin films were investigated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). XPS results revealed that the dominant oxidation states of Cu were $Cu^0$ and $Cu^+$ at 0% oxygen ratio. When the oxygen ratios increased above 5%, Cu was oxidized as CuO as detected by X-ray induced Auger electron spectroscopy and the $Cu(OH)_2$ phase was confirmed independent of the oxygen ratio. The valence band maxima were $1.19{\pm}0.09$ eV and an increase in the density of states was confirmed after formation of CuO. The thickness and roughness of copper oxide thin films decreased with increasing oxygen ratio. The crystallinity of the copper oxide films changed from cubic Cu through cubic $Cu_2O$ to monoclinic CuO with mean crystallite sizes of 8.8 nm (Cu) and 16.9 nm (CuO) at the 10% oxygen ratio level.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.55-65
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• 1998

The oxidation behavior of Ag-36.8a%Cu-7.4at%Ti alloy brazed on Si3N4 substrate was investigated at 400, 500 and 600$^{\circ}C$ in air. Under this experimental condition Si3N4 and Ag were not oxidized whereas Cu and Ti among the brazing alloy components were oxidizied obeying the parabolic oxidation rate law. The activation energy of oxidation was found to be 80kj/ mol which was smaller than that of pure Cu owing to the presence of oxygen active element of Ti. The outer oxide scale formed from the initial oxidation state was always composed of Cu oxides which were known to be growing by the outward diffusion of Cu ions. As the oxidation progressed the concentration gradient occurred due to the continuous consumption of Cu as Cu oxides and consequently build-up of an Ag-enriched layer below the Cu oxides resulted in the formation of multiple oxide scales composed of Cu oxide (CuO) /Ag-enriched layer/Cu oxide (Cu2O) /Ag-enriched layer. Also the inward diffusing of oxygen through Cu oxide and Ag-enriched layers led to the formation of internal oxides of TiO2.