• Title/Summary/Keyword: Cu nucleation

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Nucleation and Growth of Bi-free and Superconducting Phases in Bi2Sr2Ca2.2CuO3Ox (Bi2Sr2Ca2.2CuO3Ox계에서 초전도상과 Bi-free상의 핵생성과 성장)

  • 오용택;신동찬;구재본;이인환;한상철;성태현
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.4
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    • pp.343-350
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    • 2003
  • Using Bi$_2$Sr$_2$Ca$_2$.$_2$Cu$_3$ $O_{x}$ powders prepared by solid state reaction and spray drying method, the nucleation and growth behaviors of superconducting and second phases were investigated during isothermal heat treatment. When the spray drying power was used in contrast with solid state reaction powder, Bi$_2$Sr$_2$Ca$_2$.$_2$Cu$_3$ $O_{x}$ (2223) phase could be formed at the relatively shot time and second phases were much bigger. Quantitative analysis showed that as the heat treatment time increased, more Bi$_2$Sr$_2$Ca$_2$.$_2$Cu$_3$ $O_{x}$ (2212) changed to 2223 and the major second phase was changed from (Sr,Ca)$_{14}$Cu$_{24}$ $O_{x}$(14:24) to (Sr,Ca)$_2$Cu$_1$ $O_{x}$ (2:l). The superconducting phase formed at the relatively short time 14:24 phase. Following the Bi-free phase of 14:24 Phase, but long time was needed in places far from the 14:24 phase. Following the formation of the 2212 phase near the 14:24 phase, the 2223 phase nucleated preferentially at the interface between the 2212 and 14:24 phases. The preferential nuclcation of 2223 was explained by its structural similarity and low Interfacial energy with both the Bi-free and 2212 Phases.12 Phases.

Nucleation and Growth of b-Axis Oriented $PrBa_2Cu_3O_{7-x}$ Thin Films on $LaSrGaO_4$ (100) Substrates

  • Sung, Gun-Yong;Suh, Jeong-Dae
    • ETRI Journal
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    • v.18 no.4
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    • pp.339-346
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    • 1997
  • Good quality a-axis oriented thin films of $YBa_2Cu_3O_{7-x}$ may be grown by the use of a $PrBa_2Cu_3O_{7-x}$ (PBCO) layer as a template. Here we present a detailed study of the nucleation of the PBCO layer, explaining the orientations observed. It is determined that the wavy surface of a $LaSrGaO_4$ (LSGO) (100) substrate consists of the {101} planes by observing cross-sectional transmission electron microscopy images of the interface between the PBCO film and the substrate. The images and selected area diffraction patterns show that a mixed c-and b-axis oriented PBCO layer was initially grown on the substrate, followed by pure b-axis oriented PBCO growth. We explain that the c-axis oriented growth is the result of the growth of the PBCO (019) planes on the LSGO (101) planes. We conclude that the nucleation and growth of the PBCO films at the initial stages depends on the crystallographic plane of the substrate surfaces, however, as the film grows further, the kinetics of the deposition process favors b-axis oriented growth.

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Effects of Wheel Condition on Solidification Characteristics of Al-Cu Polycrystalline Ribbon (Al-Cu 다결정 리본의 응고거동에 미치는 휠조건의 영향)

  • Kim, Ju-Hyung;Lee, Sang-Mok;Hong, Chun-Pyo
    • Journal of Korea Foundry Society
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    • v.17 no.3
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    • pp.276-285
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    • 1997
  • The effect of wheel surface condition on solidification behavior of Al-Cu ribbon was investigated in order to establish extreme levels of heat extraction. The condition of wheel surface was changed either by heating the wheel surface up to $200^{\circ}C$ or by coating boron nitride(BN) onto the the rim of a wheel. Heating the wheel surface up to $200^{\circ}C$ improved the wetting behavior between the molten metal and the rotating wheel, leading to an increase in the ratio of columnar structure to the entire thickness of Al-4.3wt%Cu and Al-33.2wt%Cu ribbons. For Al-4.3wt%Cu ribbon, assuming one grain as a single heterogeneous nucleation event at the contact point, the nucleation density with the wheel surface heated to $200^{\circ}C$, was $4{\times}10^6/mm^2$, and in the cases of BN coating with thin and thick layers, $10^5/mm^2$ and $5{\times}10^4/mm^2$, respectively. The largest cooling capacity of the wheel corresponded to the heated wheel surface, and as the thickness of BN coating layer increased, the cooling capacity of the wheel gradually decreased.

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Low-Temperature Crystallization of Amorphous Si Films by Cu Adsorption (구리 흡착에 의한 비정질 실리콘 박막의 저온 결정화 거동)

  • Jo, Seong-U;Son, Dong-Gyun;Lee, Jae-Sin;An, Byeong-Tae
    • Korean Journal of Materials Research
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    • v.7 no.3
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    • pp.188-195
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    • 1997
  • Copper ions were adsorbed on amorphous Si films by spincoating of Cu solutions and were employed as surface nucleation sites for low-temperature crystallization. The crystallization temperature can bc lo~vered down to $500^{\circ}C$ and rhe crystallization time can be shortened by Cu adsorption. The Cu-adsorbed amorphous films were crystallized by fractal growth with the shape of tree branches. The fractal size ranged from $30 to 300{\mu}m$, depending on the Cu solution concentration. The fractals consisted of f e a t h e r like elliptical grains with the size of $0.3~0.4{\mu}m$. which was comparable to that of the intrinsic films crystallized at $600^{\circ}C$. Both the nucleation activation energy and grotvth activation energy decreased as the Cu concentration in the solution increased. The results suggest thcit the adsorbed Cu increases preferred nucleation sites at the surface and enhmces crystallization by reducing thc activation energies of nucleation and growth.

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Effect of Plasma Pretreatment on Superconformal Cu Alloy Gap-Filling of Nano-scale Trenches

  • Mun, Hak-Gi;Lee, Jeong-Hun;Lee, Su-Jin;Yun, Jae-Hong;Kim, Hyeong-Jun;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.53-53
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    • 2011
  • As the dimension of Cu interconnects has continued to reduce, its resistivity is expected to increase at the nanoscale due to increased surface and grain boundary scattering of electrons. To suppress increase of the resistivity in nanoscale interconnects, alloying Cu with other metal elements such as Al, Mn, and Ag is being considered to increase the mean free path of the drifting electrons. The formation of Al alloy with a slight amount of Cu broadly studied in the past. The study of Cu alloy including a very small Al fraction, by contrast, recently began. The formation of Cu-Al alloy is limited in wet chemical bath and was mainly conducted for fundamental studies by sputtering or evaporation system. However, these deposition methods have a limitation in production environment due to poor step coverage in nanoscale Cu metallization. In this work, gap-filling of Cu-Al alloy was conducted by cyclic MOCVD (metal organic chemical vapor deposition), followed by thermal annealing for alloying, which prevented an unwanted chemical reaction between Cu and Al precursors. To achieve filling the Cu-Al alloy into sub-100nm trench without overhang and void formation, furthermore, hydrogen plasma pretreatment of the trench pattern with Ru barrier layer was conducted in order to suppress of Cu nucleation and growth near the entrance area of the nano-scale trench by minimizing adsorption of metal precursors. As a result, superconformal gap-fill of Cu-Al alloy could be achieved successfully in the high aspect ration nanoscale trenches. Examined morphology, microstructure, chemical composition, and electrical properties of superfilled Cu-Al alloy will be discussed in detail.

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The analysis of columnar to equiaxed dendritic transition during alloy solidification (합금응고시 주상정으로부터 등축정 수지상으로의 천이에 관한 해석)

  • 김신우
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.1
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    • pp.187-192
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    • 1998
  • Generally the solidified microstructures of materials consist of the columnar and equiaxed dendritic regions, and many theoretical studies about columnar-to-equiaxed transition have been done because that is closely related to the mechanical and physical properties of products. In this study, the modified equation based on the Hunt's analytical columnar-to-equiaxed transition condition which was derived from heterogeneous nucleation and grain growth in front of the columnar dendrite tip under directional solidification, was obtained applying the growth-velocity-dependent distribution coefficient and liquidus slope to Hunt's. The effects of the number of nucleation sites, nucleation temperature, alloy composition, growth velocity and liquid temperature gradient on the transition for Al-Cu alloys have been investigated.

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Fabrication of Cu-Sheathed Bi-Sr-Cu-O High Temperature Superconductor Thick Films (동피복재법을 이용한 Bi-Sr-Ca-Cu-O 고온초전도 후막 제조)

  • 한상철;성태현;한영희;이준성;정상진
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 1999.02a
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    • pp.22-25
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    • 1999
  • A well oriented Bi-2212 superconductor thick films were fabricated by screen printing with a Cu-free Bi-Sr-Ca-Cu-O powder on a copper plate and heat-treating at 820- $880^{\circ}C$for several minute in low oxygen pressure or are. At minute in low oxygen pressure of air. At , the printing layer partially melted by reaction between the Cu-free precursor by reaction between the Cu-free$870^{\circ}C$ precursor and CuO of the oxidizing copper plate. It is believed that the solid phase is Bi : Sr : Ca : Cu = 2 : 2 : 0 : 1. It is likely that the Bi-2212 superconducting phase is formed at Bi-2212 superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows.

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Effect of air-contaminated TiN on the deposition characteristics of Cu film by MOCVD (공기 중에 노출된 MOCVD TiN 기판이 MOCVD Cu 증착에 미치는 효과)

  • Choe, Jeong-Hwan;Byeon, In-Jae;Yang, Hui-Jeong;Lee, Won-Hui;Lee, Jae-Gap
    • Korean Journal of Materials Research
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    • v.10 no.7
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    • pp.482-488
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    • 2000
  • The deposition characteristics of Cu film by MOCVD using (hfac)Cu(1,5-COD)(1,1,1,5,5,5-hexafluro-2,4-pentadionato Cu(I) 1,5-cryclooctadiene) as a precursor have been investigated in terms of substrate conditions. Two different substrates such as air-exposed TiN and non-contaminated TiN were used for the MOCVD of Cu. MOCVD of Cu on the air-exposed TiN affected the nucleation rate of Cu as well as its growth, resulting in the Cu films having poor interconnection between particles with relatively small grains. On the other hand, in-situ MOCVD of Cu led to the Cu films having a significantly improved interconnection between particles with larger grains, indicating the resistivity as low as $2.0{\mu}{\Omega}-cm$ for the films having more than 1900$\AA$ thickness. Moreover, better adhesion of Cu films to the TiN by using in-situ MOCVD has been obtained. Finally, initial coalescence mechanism of Cu was suggested in this paper in terms of different substrate conditions by observing the surface morphology of the Cu films deposited by MOCVD.

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Effects of Impact Velocity on Crystallization and Activation Energy of Cu-based Bulk Metallic Glasses in Kinetic Spray Coating (저온 분사 코팅 공정에서 충돌속도에 따른 CuNiTiZr 벌크 비정질 소재의 활성화 에너지와 결정화 거동 분석)

  • Yoon, Sang-Hoon;Bae, Gyu-Yeol;Kim, Jung-Hwan;Lee, Chang-Hee
    • Journal of the Korean institute of surface engineering
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    • v.41 no.6
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    • pp.301-307
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    • 2008
  • In this paper, nanocrystallization of CuNiTiZr bulk metallic glass (BMG) subjecting to a kinetic spraying, dependent on impact velocity, was investigated by numerical and experimental approaches. The crystallization fraction and nucleation activation energy of initial feedstock and as-deposited coating were estimated by DSC and Kissinger method, respectively. The results of numerical modeling and experiment showed that the crystalline fraction and nucleation activation energy in BMG coatings were depended on kinetic energy of incident particle. Upon impact, the conversion of particle kinetic energy leads to not only decreasing free energy barrier but also increasing the driving force for an amorphous to crystalline phase transformation. The nanocrystallization of BMGs is associated with the strain energy delivered by a plastic deformation with a high strain rate.