• 제목/요약/키워드: Cu ion

검색결과 1,123건 처리시간 0.041초

N- and P-doping of Transition Metal Dichalcogenide (TMD) using Artificially Designed DNA with Lanthanide and Metal Ions

  • Kang, Dong-Ho;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
    • /
    • pp.292-292
    • /
    • 2016
  • Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

  • PDF

Fabrication of Backscatter Electron Cones for Radiation Therapy (산란전자선을 이용한 강내측방조사기구의 제작과 특성)

  • Chu, Sung-Sil;Suh, Chang-Ok;Kim, Gwi-Eon
    • Radiation Oncology Journal
    • /
    • 제19권1호
    • /
    • pp.74-80
    • /
    • 2001
  • Purpose : Irradiation cones by using backscatter electrons are made for the treatment of superficial small lesions of skin, oral cavity, and rectum where a significant dose gradient and maximum surface dose is desired. Methods and Materials : Backscatter electrons are produced from the primary electron beams from the linear accelerators. The design consists of a cylindrical cone that has a thick circular plate of high atomic number medium (Pb or Cu) attached to the distal end, and the plate can be adjusted the reflected angle. Primary electrons strike the metal plate perpendicularly and produce backscatter electrons that reflect through the lateral hole for treatment. Using film and a parallel plate ion chamber, backscatter electron dose characteristics are measured. Results : The depth dose characteristic of the backscatter electron is very similar to that of the hard x-ray beam that is commonly used for the intracavitary and superficial lesions. The basckscatter electron energy is nearly constant and effectively about 1.5 MeV from the clinical megavoltage beams. The backscatter electron dose rate of $35\~85\;cGy/min$ could be achieved from modern accelerators without any modification. and the depth in water of $50\%$ depth dose from backscatter electron located at 6mm for $45^{\circ}$ angled lead scatter. The beam flatness is dependent on the slit size and the depth of treatment, but is satisfactory to treat small lesions. Conclusions : The measured data for backscatter electron energy, depth dose flatness dose rate and absolute dose indicates that the backscatter electrons are suitable for clinical use.

  • PDF

The Demand Analysis of Water Purification of Groundwater for the Horticultural Water Supply (시설원예 용수 공급을 위한 지하수 정수 요구도 분석)

  • Lee, Taeseok;Son, Jinkwan;Jin, Yujeong;Lee, Donggwan;Jang, Jaekyung;Paek, Yee;Lim, Ryugap
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • 제21권12호
    • /
    • pp.510-523
    • /
    • 2020
  • This study analyzed groundwater quality in hydroponic cultivation facilities. Through this study, the possibility of groundwater use was evaluated according to the quality of the groundwater for hydroponic cultivation facilities. Good groundwater quality, on average, is pH 6.61, EC 0.27 dS/m, NO3-N 7.64 mg/L, NH4+-N 0.80 mg/L, PO4-P 0.09 mg/L, K+ 6.26 mg/L, Ca2+ 18.57 mg/L, Mg2+ 4.38 mg/L, Na+ 20.85 mg/L, etc. All of these satisfy the water quality standard for raw water in nutrient cultivation. But in the case of farmers experiencing problems with groundwater quality, most of the items exceeded the water quality standard. As a result of the analysis, it was judged that purifying groundwater of unsuitable quality for crop cultivation, and using it as raw water, was effective in terms of water quality and soil purification. If an agricultural water purification system is constructed based on the results of this study, it is judged that the design will be easy because the items to be treated can be estimated. If a purification system is established, it can use groundwater directly in the facility and for horticulture. These study results will be available for use in sustainable agriculture and environments.