• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.430.1-430.1
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• 2016

We present the concept of reducible fugitive material that conformally surrounds core Cu nanowire (NW) to fabricate transparent conducting electrode (TCE). Reducing atmosphere can corrodes/erodes the underlying/surrounding layers and might cause undesirable reactions such impurity doing and contamination, so that hydrogen-/forming gas based annealing is impractical to make device. In this regards, we introduce novel reducible shell conformally surrounding indivial CuNW to provide a protection against the oxidation when exposed to both air and solvent. Uniform copper lactate shell formation is readily achievable by injecting lactic acid to the CuNW dispersion as the acid reacts with the surface oxide/hydroxide or pure copper. Cu lactate shell prevents the core CuNW from the oxidation during the storage and/or film formation, so that the core-shell CuNW maintains without signficant oxidation for long time. Upon simple thermal annealing under vacuum or in nitrogen atmosphere, the Cu lactate shell is easily decomposed to pure Cu, providing an effective way to produce pure CuNW network TCE with typically sheet resistance of $19.8{\Omega}/sq$ and optical transmittance of 85.5% at 550 nm. Our reducible copper lactate core-shell Cu nanowires have the great advantage in fabrication of device such as composite transparent electrodes or solar cells.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권4호
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• pp.221-225
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• 1999

This paper shows the parameters to affect the critical characteristic of YBaCuO superconducting bulk fabricated by MPMG (Melt Powdered Melt Growth)process. In order to investigate proper processing variables, the effect of the holding time at the melting temperature and that of the slow cooling time in $O_2\; ambient\; on\; the\; J_c$ were experimented. And then with the above obtained heat treatment conditions, the effects of addition of $Y_2BaCuO_5\; and\; Ag\; on\; the\; J_c$ were also investigated. A proper slow cooling time yields phase transformation from Tetragonal $(YBa_2Cu_3O_6)$ to Orthorhombic $(YBa_2Cu_3O_7)$ during an annealing time in $O_2$. Ag addition plays a role in increasing the $T_c\; and\; the J_c$, but the magnetization decreases. The $J_c$ and the magnetization increase with addition of Y211. $J_c$ of the sample added Ag 10wt% is superiorover 3000 G. Proper holding time, slow cooling time and amount of impurity addition are important parameters in fabricating the YBaCuO bulk by MPMG process with high $J_c$.

• 한국세라믹학회지
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• 제53권5호
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• pp.506-510
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• 2016

The eutectic melt of BaO-CuO flux is known to be a potential sintering aid for $Ba(Zr,Y)O_3$ (BZY) electrolyte for proton-conducting ceramic fuel cells (PCFCs). A density of BZY higher than 97% of theoretical density can be achieved via sintering at $1300^{\circ}C$ for 2 h using a flux composed of 28 mol% BaO and 72 mol% CuO. In the present study, chemical and structural evolution of BaO-CuO flux throughout the sintering process was investigated. An intermediate holding step at $1100^{\circ}C$ leads to formation of various impurity compounds such as $BaCuO_{1.977}$, $Ba_{0.92}Cu_{1.06}O_{2.28}$ and $Cu_{16}O_{14.15}$, which exhibit significantly larger unit cell volumes than the matrix. The presence of such secondary compounds with large lattice mismatch can potentially lead to mechanical failure. On the other hand, direct heating to the final sintering temperature produced CuO and $Cu_2O$ as secondary phases, whose unit cell volumes are close to that of the matrix. Therefore, the final composition of the flux is strongly affected by the thermal history, and a proper sintering schedule should be used to obtain the desired properties of the final product.

• 수산해양기술연구
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• 제26권1호
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• pp.8-13
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• 1990

LiF(Mg, Cu, P) 단결정의 미시적 이완매개변수와 유전손실 등을 구하기 위하여 TSD glow곡선을 측정하고, 측정된 glow곡선을 초기상승법, 가열율법 및 전면적법으로 해석하였다. 쌍극자의 이완시간 $\tau$, pre-exponential인자 $\tau$하(o) 및 활성화에너지E는 각각 12.19S, 1.97$\times$10 상(-12)S 및 0.55eV이었다. 또한 TSD glow곡선을 사용하여 온도영역 300k~340k 사이에서 구한 LiF(Mg, Cu, P)단 결정의 tan$\delta$값은 약 3$\times$10 상(-2)이었다.

• 한국세라믹학회지
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• 제35권10호
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• pp.1007-1013
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• 1998

The samples of Bi2Sr2Ca1-xNaxCu2O8+y with various carrier concentration were synthesized by substituting Na for Ca ion. The superconducting properties hall coefficients and X-ray powder diffraction were measur-ed the sampled. Single phase samples were obtained for 0$\leq$x<0.3 of Bi2Sr2Ca1-xNaxCu2O8+y In the single phase the critical temperature. {{{{ { T}_{c } }} and carrier concentration increase with the increase of Na concentration pass through a maximum and then decreases. In the range of x$\geq$0.7 to the Na doped samples however we observed the metal-semiconductor transition. The c-axis seemed to decrease and a and b-axes increase with increasing Na concentration in the single phase. Decreasing of c-axis while increasing x is due to the smaller size of {{{{ {Na}^{+1 } }} ions to the {{{{ { Ca}^{+2 } }} ions. In the range of x>0.3 however the trend becomes ambiguous due to the inclusion of the 10K phase and impurity phase.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.99-101
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• 1999

To improve the texture and the hardness of Ni substrates, we added impurities such as Mn, Fe, Co, Cu and Cr and investigated the effect of impurities on the texture and the hardness of Ni tapes. The Ni tapes with 0.2% Co, Cr, Cu, showed poor in-plane textures. However, the Ni tapes with 0.1 ${\sim}$ O.2% Mn (or Fe), showed much better textures. We'll describe the detailed effects of the amount of Mn impurities.

• 한국표면공학회지
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• 제42권3호
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• pp.103-108
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• 2009

The effect of Arsenic in copper-sulfate solutions during electrorefining of copper was investigated using scanning electron microscopy, X-ray diffraction and cyclic voltammetry analysis. Electrodeposition was carried out using Arsenic, Antimony and bismuth addition to sulfate electrolytes: 45 g/l $Cu^{2+}$ and 170 g/l $H_2SO_4$. Arsenic in sulfate electrolytes changed the morphology and structure of the copper deposits as compared with those obtained from impurity free solutions. When arsenic was present in the sulfate electrolytes, $Cu-3$As intermetallic phase was formed locally on the deposits.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.83-83
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• 2003

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.62$\times$10$^{16}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10 K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 7 meV and 5.9 meV, respectivity. By Haynes rule, an activation energy of impurity was 59 meV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.61-64
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• 2003

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. Mg(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $O_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.615-618
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• 2003

동시 성막법에 의한 저속 성장으로 Bi 2201 및 Bi 2212 박막을 제작하였다. Bi 2212의 조성이 되도록 각 원소를 공급하고 기판 온도 및 산화 가스 압력을 변화시켜 성막을 한 결과 낮은 기판 온도에서는 Bi 2201의 단상이 생성되었으며 75$0^{\circ}C$ 이상이 되면 Bi 2212 상이 생성되었다. 이 중간 온도 영역에서는 Bi 2212와 Bi 2201의 고용체가 생성되고 있음을 해석하였다. 순차 성막법에서 생성막을 평가한 결과 성막이 이루어지고 있는 박막의 가장 표면은 목적 조성으로부터 벗어난 상태에 있으며 결정 구조의 전하 중성 조건을 예상한 곳의 표면은 불안정하다는 것을 알 수 있었다. Bi 2201 상이 생성된 막에서도 순차 성막 과정에 의한 막 생성이라기보다는 오히려 박막 내부에서의 원자 확산 과정에 의해 생성된 것으로 생각된다.